527A Search Results

527AA-01

Contextual Info: MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS SOT−963 CASE 527AA−01 ISSUE D DATE 30 JUL 2008 SCALE 4:1 A −Y− D L −X− 6 5 4 1 2 3 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETERS 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD

SOT23-5 JEDEC standard

Abstract: POD-SOT23 SOT235 MO-178 sot 23- POD 527AH
Contextual Info: MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS SOT−23, 5 Lead CASE 527AH−01 ISSUE O D DATE 19 DEC 2008 SYMBOL E1 MIN NOM A 0.90 1.45 A1 0.00 0.15 A2 0.90 b 0.30 0.50 c 0.08 0.22 E 1.15 1.30 D 2.90 BSC E 2.80 BSC E1 1.60 BSC 0.95 BSC e e L 0.45 0.30 L1 PIN #1 IDENTIFICATION

527AB

Contextual Info: MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS SOT−953 CASE 527AB−01 ISSUE C DATE 30 JUL 2008 SCALE 4:1 A −Y− D L −X− 5 4 1 2 3 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETERS 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD

AND8381

Contextual Info: AND8381/D SOT-963 527AD Dual MOSFET Package Board Level Application and Thermal Performance http://onsemi.com Prepared by: Anthony M. Volpe APPLICATION NOTE ON Semiconductor INTRODUCTION and aforementioned vias is shown in Figure 3 of the subsequent section.

019REF

Abstract: a3he
Contextual Info: MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS SOT−963 CASE 527AD−01 ISSUE E DATE 09 FEB 2010 SCALE 4:1 X Y D 6 5 4 1 2 3 A HE E NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD

POD-SOT23

Abstract: MO-178 sot 23- POD
Contextual Info: MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS SOT−23, 6 Lead CASE 527AJ−01 ISSUE O D e E1 E DATE 19 DEC 2008 SYMBOL MIN NOM A 0.90 A1 0.00 A2 0.90 b 0.30 0.50 c 0.08 0.22 1.45 0.15 1.15 2.90 BSC E 2.80 BSC E1 1.60 BSC e 0.95 BSC L 0.45 0.30 0.60 0.60 REF

AOC526A

Abstract: 10 uh-k ADG526A ADG526AK ADG527A ADG527AK "sia 3"
Contextual Info: — 266 - ADG526A/527A • W * i ; 4 '1 6 f t U i 5 2 6 A M » 8 ft ? lK 5 2 7 A ) «± : - V S- 2 - + V S+ 2 V ¡S t B ' : +VS=+10.8— +16.5V f ®± : - V S-4 ~ + V S+ 4 V ttö ft: 20mA -VS=-10. 8-— 1 6.5V » fïS Â IS H K .B: -40~+85°C +VS=+10. 8— +16.5V

2N6648

Abstract: diode cc 3053 2N6649 2N6650 MIL-PRF19500 cc 3053 diode
Contextual Info: The documentation process conversion measures necessary to comply with this revision shall be completed by 10 December 1999 INCH-POUND MIL-PRF-19500/527B 10 September 1999 SUPERSEDING MIL-S-19500/527A 1 July 1993 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DARLINGTON TRANSISTOR, PNP, SILICON, POWER

igbt data

Contextual Info: Technical Information 2PS0900R17KE3-3GH PrimeSTACK Zieldaten target data Key data 1x 527A AC at 690V AC, forced air fan not implemented General information for: Stacks for various inverter application. Semiconductors, heat sinks, drivers and sensors included.

527AF

Abstract: to253 to-253 sot143-4
Contextual Info: MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS SOT−143, 4 Lead CASE 527AF−01 ISSUE A DATE 24 MAR 2009 SYMBOL MIN A 0.80 1.22 D A1 0.05 0.15 e A2 0.75 b 0.30 0.50 b2 0.76 0.89 4 3 E1 1 E c 0.08 D 2.80 E 2.10 E1 1.20 e 2 0.40 L1 0.20 2.90 2.64 1.30 0.50 0°

SOT233

Abstract: POD-SOT23 sot 23- POD 527AG
Contextual Info: MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS SOT−23, 3 Lead CASE 527AG−01 ISSUE O D DATE 19 DEC 2008 SYMBOL MIN A 0.89 1.12 A1 0.013 0.10 b 0.37 0.50 c 0.085 0.18 D 2.80 3.04 E 2.10 2.64 E1 1.20 3 E1 E NOM MAX 1.40 e 0.95 BSC e1 1.90 BSC L 0.40 REF e1 L1

POD-SOT23

Abstract: 527AK MO-178 L2 SOT23-8
Contextual Info: MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS SOT−23, 8 Lead CASE 527AK−01 ISSUE A DATE 18 MAR 2009 SYMBOL E1 e E b PIN #1 IDENTIFICATION NOM MAX A 0.90 1.45 A1 0.00 0.15 A2 0.90 A3 0.60 0.80 b 0.28 0.38 c 0.08 0.22 1.10 1.30 D 2.90 BSC E 2.80 BSC E1 1.60 BSC

marking code 953

Contextual Info: MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS SOT−953 CASE 527AE−01 ISSUE D DATE 30 JUL 2008 SCALE 4:1 C A B D 5 A L 4 HE E 1 2 3 e 5X b 0.08 C A C B DIM A b C D E e L HE MILLIMETERS MIN NOM MAX 0.34 0.37 0.40 0.10 0.15 0.20 0.07 0.12 0.17 0.95 1.00 1.05

6cj3

Abstract: 3dc3 tube 3CA3
Contextual Info: HIGH VOLTAGE SILICON RECTIFIERS FOR TELEVISION APPLICATIONS Peak Repetitive Forward Current mA Average Forward Current mA NTE Type No. Diagram Number Peak Reverse Voltage pRV If r m *F VF 513 518 527A 191 45kV 200 5 75V @ 50mA - 49 10kV - 25 18V @ 25mA 3A

220 vha

Abstract: CAT809STBI
Contextual Info: CAT803, CAT809, CAT810 3-Pin Microprocessor Power Supply Supervisors Description The CAT803, CAT809, and CAT810 are supervisory circuits that monitor power supplies in digital systems. The CAT803, CAT809, and CAT810 are direct replacements for the MAX803, MAX809 and

TND31

Abstract: 527A
Contextual Info: CAT811, CAT812 4-Pin Microprocessor Power Supply Supervisors with Manual Reset Description The CAT811 and CAT812 are microprocessor supervisory circuits that monitor power supplies. The CAT811 and CAT812 are direct replacements for the MAX811 and MAX812 in applications operating

Contextual Info: MUN5311DW1, NSBC114EPDXV6, NSBC114EPDP6 Complementary Bias Resistor Transistors R1 = 10 kW, R2 = 10 kW http://onsemi.com NPN and PNP Transistors with Monolithic Bias Resistor Network This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor

93C66LT

Abstract: 93c66l sk sot-23 93C66V marking sk sot-23 sot23 marking SK 93c66 soic 948AL CAT93C66 01-T-SV
Contextual Info: CAT93C66 4 kb Microwire Serial CMOS EEPROM Description The CAT93C66 is a 4 kb CMOS Serial EEPROM device which is organized as either 256 registers of 16 bits ORG pin at VCC or 512 registers of 8 bits (ORG pin at GND). Each register can be written (or read) serially by using the DI (or DO) pin. The CAT93C66 features

Contextual Info: ANALOG ► DEVICES LC2M0S Analog I/O Port neously h eld by T rack /H o ld A an d T rack /H o ld B , and the held voltages are sequentially converted. FEATURES Four-Channel, 8-Bit, 3.6 |as ADC Three DACs with On-Chip Amplifiers: One 11-Bit, 8 fis DAC Two 8-Bit, 4 |x.s DACs

Contextual Info: NL17SZ86 Single 2-Input Exclusive-OR Gate The NL17SZ86 is a high performance single 2−input Exclusive−OR Gate operating from a 2.3 V to 5.5 V supply. http://onsemi.com Features • • • • • • • • • MARKING DIAGRAMS SC−88A / SOT−353 / SC−70

Contextual Info: NL17SG32 Single 2-Input OR Gate The NL17SG32 MiniGatet is an advanced high−speed CMOS 2−input OR gate in ultra−small footprint. The NL17SG32 input structures provides protection when voltages up to 4.6 V are applied. http://onsemi.com Features Wide Operating VCC Range: 0.9 V to 3.6 V

Contextual Info: NST3946DP6T5G Dual Complementary General Purpose Transistor The NST3946DP6T5G device is a spin−off of our popular SOT−23/SOT−323/SOT−563 three−leaded device. It is designed for general purpose amplifier applications and is housed in the SOT−963

Contextual Info: NL17SG00 Single 2-Input NAND Gate The NL17SG00 MiniGatet is an advanced high−speed CMOS 2−input NAND gate in ultra−small footprint. The NL17SG00 input structures provides protection when voltages up to 4.6 V are applied. http://onsemi.com Features Wide Operating VCC Range: 0.9 V to 3.6 V

Contextual Info: NL17SG07 Buffer with Open Drain Output The NL17SG07 MiniGatet is an advanced high−speed CMOS Buffer with Open Drain Output in ultra−small footprint. The NL17SG07 input structures provides protection when voltages up to 5.5 V are applied with VCC greater than or equal to 0.9 volts,