527T Search Results
527T Price and Stock
Samtec Inc TSW-105-27-T-D- Bulk (Alt: TSW-105-27-T-D) |
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TSW-105-27-T-D | Bulk | 111 Weeks | 1 |
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Samtec Inc TSW-125-27-T-S-RAConn Unshrouded Header HDR 25 POS 2.54mm Solder RA Thru-Hole - Bulk (Alt: TSW-125-27-T-S-RA) |
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TSW-125-27-T-S-RA | Bulk | 111 Weeks | 1 |
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TSW-125-27-T-S-RA | Bulk | 127 | 1 |
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TSW-125-27-T-S-RA | 84 | 1 |
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TSW-125-27-T-S-RA | 3 Weeks | 1 |
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Vishay Intertechnologies BY527TAPDiode Switching 800V 2A 2-Pin SOD-57 Ammo - Tape and Reel (Alt: BY527TAP) |
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BY527TAP | Reel | 16 Weeks | 25,000 |
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BY527TAP | 11,899 | 3 |
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BY527TAP | 15 Weeks | 5,000 |
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Vishay Intertechnologies BY527TRDiode Switching 800V 2A 2-Pin SOD-57 T/R - Tape and Reel (Alt: BY527TR) |
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BY527TR | Reel | 16 Weeks | 25,000 |
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Samtec Inc TSW-115-27-T-Q- Bulk (Alt: TSW-115-27-T-Q) |
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TSW-115-27-T-Q | Bulk | 111 Weeks | 1 |
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527T Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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rhz 33
Abstract: 48-PIN
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PD23C256112A 256M-BIT PD23C256112A 48-pin 16Note) 512Note) rhz 33 | |
tsop i 12mmx20mm
Abstract: MX23J12840 MX23J12840TC-50 MX23J12840TC-50G MX23J12840TI-50G xtrarom
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MX23J12840 128M-BIT 576Note) 16Note) 512Note) 48-pin 12mmx20mm) MacronixCT/28/2005 tsop i 12mmx20mm MX23J12840 MX23J12840TC-50 MX23J12840TC-50G MX23J12840TI-50G xtrarom | |
C 5271 manualContextual Info: QED RISCMark RM5271™ 64-Bit Superscalar Microprocessor FEATURES: • Dual Issue su p e rsca la r m icro p ro ce sso r - can issue one integer and one floa ting -point in stru ction pe r cycle — 200, 225, 250, 266 M H z op era ting frequ en cies — 345 D hrystone, 2.1 M IP S m axim um |
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RM5271TM 64-Bit R4600, R4700 R5000 10OOMBps 64-bitm DS-5271, C 5271 manual | |
MX23L256Contextual Info: PRELIMINARY MX23L25640 256M-BIT NAND INTERFACE MASK ROM DESCRIPTION The MX23L25640 is a 256 Mbit NAND interface programmable mask read-only memory that operates with a single power supply. The memory organization consists of 512 + 16 (Redundancy bytes x 32 pages x |
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MX23L25640 256M-BIT MX23L25640 48-pin 44-pin 576Note 16Note) 512Note) MX23L256 | |
Contextual Info: PRELIMINARY MX23L12840 128M-BIT NAND INTERFACE MASK ROM DESCRIPTION The MX23L12840 is a 128 Mbit NAND interface programmable mask read-only memory that operates with a single power supply. The memory organization consists of 512 + 16 (Redundancy bytes x 32 pages x |
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MX23L12840 128M-BIT MX23L12840 48-pin 44-pin 576Note 16Note) 512Note) | |
MX23L12840Contextual Info: PRELIMINARY MX23L12840 128M-BIT NAND INTERFACE MASK ROM DESCRIPTION The MX23L12840 is a 128 Mbit NAND interface programmable mask read-only memory that operates with a single power supply. The memory organization consists of 512 + 16 (Redundancy bytes x 32 pages x |
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MX23L12840 128M-BIT MX23L12840 48-pin 44-pin 576Note 16Note) 512Note) | |
2N1056
Abstract: ASY13 AC142HK 2G271 2N1287A 2SB381 T05 Package transistor t05 2G1024 2G319
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2N3633/52 ME8101 TIX895 1300M5A 1500MS 2500M5 2N2446 2N2379 3000MIA 4000Mt 2N1056 ASY13 AC142HK 2G271 2N1287A 2SB381 T05 Package transistor t05 2G1024 2G319 | |
2SB381
Abstract: transistor t05 NKT251 ASY12 T05 Package 2G1024 2G319 2G524 2SB174 2SB219
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buy56-4 BUY56-6 buy56-10 BUY72-4 BUY72-6 BUY72-10 2SB381 transistor t05 NKT251 ASY12 T05 Package 2G1024 2G319 2G524 2SB174 2SB219 | |
Contextual Info: HN29W8411 Series 84M AND type Flash Memory More than 21,074-sector 86,319,104-bit HITACHI ADE-203-870A (Z) Preliminary, Rev. 0.1 March 31, 1998 Description The Hitachi HN29W8411 Series is a CMOS Flash Memory with AND type memory cells. It has fully automatic programming and erase capabilities with a single 3.3 V and 5 V power supply. The functions are |
OCR Scan |
HN29W8411 074-sector 104-bit) ADE-203-870A | |
48-PIN
Abstract: PD23C256112 M14631EJ3V0DS00
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PD23C256112 256M-BIT PD23C256112 48-pin M14631EJ3V0DS00 | |
D1554
Abstract: D1554 equivalent
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CLC412 330MHz 250MHz 30MHz -76dB 10MHz) 300V/us CLC412 CLC420 D1554 D1554 equivalent | |
KM29V32000TSContextual Info: KM29V32000TS ELECTRONICS Fl as h 4M x 8 Bit NAND Flash Memory FEATURES GENERAL DESCRIPTION • Single 3.3 - volt Supply • Organization The KM29V32000TS/RS is a 4M 4,194,304 x8 bit NAND Flash memory with a spare 128K(131,072)x8 bit. Its NAND cell provides the most cost-effective solution for the mass |
OCR Scan |
KM29V32000TS 250us KM29V32000TS | |
Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT µ PD23C256112A NAND INTERFACE 256M-BIT MASK-PROGRAMMABLE ROM Description The µPD23C256112A is a 256 Mbit NAND interface programmable mask read-only memory that operates with a single power supply. The memory organization consists of 512 + 16 (Redundancy bytes x 32 pages x 2,048 blocks. |
Original |
PD23C256112A 256M-BIT PD23C256112A 48-pin | |
xtraromContextual Info: MX23J25640 256M-BIT NAND INTERFACE XtraROMTM FEATURES • Word organization - 33,554,432 + 2,097,152Note by 8 bits • Page size - (512 + 16Note) by 8 bits • Block size - (16,384 + 512Note) by 8 bits Note : Underlined parts are redundancy and fixed to |
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MX23J25640 256M-BIT 152Note) 16Note) 512Note) 48-pin 12mmx20mm) xtrarom | |
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2SA42
Abstract: 2SA248 2SA478 T011A 2G271 2SB226 2sb222 AT128 2G1024 2G524
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USAF520ES070M 2N1508 50M5A 13On0 32On0 600di 2N1509 2SA42 2SA248 2SA478 T011A 2G271 2SB226 2sb222 AT128 2G1024 2G524 | |
Contextual Info: KM29N32000RS Fl ash ELECTRONICS 4M x 8 Bit NAND Flash Memory FEATURES GENERAL DESCRIPTION • Single 5.0 - volt Supply • Organization - Memory Cell Array : 4M +128K bit x 8bit - Data Register : (512+16)bitx8bit • Automatic Program and Erase - Page Program : (512 + 16)Byte |
OCR Scan |
KM29N32000RS 250us | |
Contextual Info: PRELIMINARY MX23L25640 256M-BIT NAND INTERFACE MASK ROM DESCRIPTION The MX23L25640 is a 256 Mbit NAND interface programmable mask read-only memory that operates with a single power supply. The memory organization consists of 512 + 16 (Redundancy bytes x 32 pages x |
Original |
MX23L25640 256M-BIT MX23L25640 48-pin 44-pin 576Note 16Note) 512Note) | |
Contextual Info: MX23J12840 128M-BIT NAND INTERFACE XtraROMTM FEATURES • Word organization - 16,777,216 + 1,048,576Note by 8 bits • Page size - (512 + 16Note) by 8 bits • Block size - (16,384 + 512Note) by 8 bits Note : Underlined parts are redundancy and fixed to |
Original |
MX23J12840 128M-BIT 576Note) 16Note) 512Note) 48-pin 12mmx20mm) | |
Contextual Info: GPR27L512A 512M-Bit NAND Interface Mask ROM NOV. 15, 2007 Version 1.1 GENERALPLUS TECHNOLOGY INC. reserves the right to change this documentation without prior notice. TECHNOLOGY INC. is believed to be accurate and reliable. Information provided by GENERALPLUS |
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GPR27L512A 512M-Bit | |
dm-58
Abstract: 2N2238 2N1056 2N3443 2SB381 2SB383 2SB382 T03A 2N1287A 98T2 2SB226
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B170024 4000n dm-58 2N2238 2N1056 2N3443 2SB381 2SB383 2SB382 T03A 2N1287A 98T2 2SB226 | |
tsop i 12mmx20mm
Abstract: xtrarom MX23J25640TI-50G load cell amplifier MX23J25640 MX23J25640TC-50 MX23J25640TC-50G
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MX23J25640 256M-BIT 152Note) 16Note) 512Note) 48-pin 12mmx20mm) MacronixCT/28/2005 tsop i 12mmx20mm xtrarom MX23J25640TI-50G load cell amplifier MX23J25640 MX23J25640TC-50 MX23J25640TC-50G | |
Contextual Info: KM29 V32000T Flash ELECTRONICS 4M x 8 Bit NAND Flash Memory FEATURES GENERAL DESCRIPTION • Single 3.3 - volt Supply • Organization - Memory Cell Array : 4M +128K bit x 8bit - Data Register : (512 + 16)bitx8bit • Automatic Program and Erase - Page Program : (512 + 16)Byte |
OCR Scan |
V32000T 250us KM29V32000T) 003iA | |
48-PINContextual Info: DATA SHEET MOS INTEGRATED CIRCUIT µ PD23C64112 NAND INTERFACE 64M-BIT MASK-PROGRAMMABLE ROM Description The µPD23C64112 is a 64M bit NAND interface programmable mask read-only memory that operates with a single power supply. The memory organization consists of 512 + 16 (Redundancy bytes x 16 pages x 1,024 blocks. The |
Original |
PD23C64112 64M-BIT PD23C64112 48-pin | |
48-PINContextual Info: DATA SHEET MOS INTEGRATED CIRCUIT µ PD23C256112A NAND INTERFACE 256M-BIT MASK-PROGRAMMABLE ROM Description The µPD23C256112A is a 256 Mbit NAND interface programmable mask read-only memory that operates with a single power supply. The memory organization consists of 512 + 16 (Redundancy bytes x 32 pages x 2,048 blocks. |
Original |
PD23C256112A 256M-BIT PD23C256112A 48-pin |