5304 POWER SUPPLY IC Search Results
5304 POWER SUPPLY IC Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
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D1U74T-W-1600-12-HB4AC | Murata Manufacturing Co Ltd | AC/DC 1600W, Titanium Efficiency, 74 MM , 12V, 12VSB, Inlet C20, Airflow Back to Front, RoHs |
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D1U54T-M-2500-12-HB4C | Murata Manufacturing Co Ltd | 2.5KW 54MM AC/DC 12V WITH 12VDC STBY BACK TO FRONT AIR |
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MGN1S1212MC-R7 | Murata Manufacturing Co Ltd | DC-DC 1W SM 12-12V GAN |
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MGN1S1208MC-R7 | Murata Manufacturing Co Ltd | DC-DC 1W SM 12-8V GAN |
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MGN1D050603MC-R7 | Murata Manufacturing Co Ltd | DC-DC 1W SM 5-6/-3V GAN |
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5304 POWER SUPPLY IC Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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71v65603Contextual Info: 256K x 36, 512K x 18 3.3V Synchronous ZBT SRAMs ZBT™ Feature 3.3V I/O, Burst Counter Pipelined Outputs Features ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ Preliminary IDT71V65603 IDT71V65803 reads. Thus, they have been given the name ZBTTM, or Zero Bus Turnaround. |
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IDT71V65603 IDT71V65803 166MHz 166MHz 133MHz 100MHz 200MHz 71v65603 | |
71V65603Contextual Info: 256K x 36, 512K x 18 3.3V Synchronous ZBT SRAMs ZBT™ Feature 3.3V I/O, Burst Counter Pipelined Outputs Features ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ IDT71V65603/Z IDT71V65803/Z Address and control signals are applied to the SRAM during one clock |
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IDT71V65603/Z IDT71V65803/Z IDT71V65603/5803 150MHz. 119BGA. 119BGA-reordered 71V65603 | |
Contextual Info: 256K x 36, 512K x 18 3.3V Synchronous ZBT SRAMs ZBT™ Feature 3.3V I/O, Burst Counter Pipelined Outputs Features ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ Preliminary IDT71V65603 IDT71V65803 reads. Thus, they have been given the name ZBTTM, or Zero Bus Turnaround. |
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IDT71V65603 IDT71V65803 150MHz IDT71V65803 512Kx18 x4033 IDT71V65603, IDT71V65803, IDT71V656 IDT71V658 | |
5304
Abstract: 54HC 54LS 74HC 74LS C1995 MM54HC MM54HC107 MM74HC MM74HC107
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MM54HC107 MM74HC107 5304 54HC 54LS 74HC 74LS C1995 MM54HC MM74HC MM74HC107 | |
AD5327
Abstract: Chip-Rail AD5314 ADS324 d5307 AD5304 AD5324 AD5324BRM RM-10 Analog devices branding codes 68
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8/10/12-Bit AD5304/AD5314/AD5324* AD5304: AD5314: 10-Bit AD5324: 12-Bit 10-Lead 200nA< AD5312 AD5327 Chip-Rail AD5314 ADS324 d5307 AD5304 AD5324 AD5324BRM RM-10 Analog devices branding codes 68 | |
DMP16
Abstract: HJM2503D NJM2503 NJM2503M ic 5304 1a change over switch circuit diagram s612
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NJM2503 10MHz, 43MHz) 10MHz DIP16, DMP16 43MHz, DMP16 HJM2503D NJM2503M ic 5304 1a change over switch circuit diagram s612 | |
872S
Abstract: 837s 8b3s aA88
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SLA8000 SLA8000Series 872S 837s 8b3s aA88 | |
Contextual Info: M MCM5303 MCM5003 MCM5304 MCM5004 M O TO R O LA 512-BIT PROGRAMMABLE READ ONLY MEMORY T h e M C M 5 3 0 3 /5 0 0 3 and M C M 5 3 0 4 /5 0 0 4 are m o n o lith ic b ip o la r 5 1 2 -b it P rogram m a ble Read O n ly M em o ries (P R O M s) organized as 64 e ig h t-b it w o rds. These m em o rie s are fie ld p ro g ra m m a b le , i.e., |
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MCM5303 MCM5003 MCM5304 MCM5004 512-BIT | |
la 4620
Abstract: lt 6652
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CV23S8) r0-25 la 4620 lt 6652 | |
1R1FContextual Info: * OL J I NT D I F F E R E N T I A ! SYN ER G Y LINE R E C E IV E R .-xiuO bjU S E M IC O N D U C T O R FE A TU R E S D E S C R IP T IO N • Max. propagation delay of 900ps ■ Differential outputs ■ Ie e min. of -60mA ■ Extended supply voltage option: |
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900ps SY100S314 SY100S314DC SY100S314FC SY100S314JC SY100S314JCTR D24-1 F24-1 J28-1 J28-1 1R1F | |
SFE 5.5 MC
Abstract: SFE 5.74 MC SFE 5.74
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U4454B U4454B 16-pin D-74025 23-Feb-96 SFE 5.5 MC SFE 5.74 MC SFE 5.74 | |
TTL 74LS00
Abstract: AS5306 magnetic strip encoder 74LS00 AS5304 JESD78 MO-153-AC 12mm Rotary Encoder switch rotary encoder 500 pulses per revolution quadrature
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AS5304 AS5306 AS5304/AS5306 AS5304) AS5306) TTL 74LS00 AS5306 magnetic strip encoder 74LS00 JESD78 MO-153-AC 12mm Rotary Encoder switch rotary encoder 500 pulses per revolution quadrature | |
Contextual Info: V LASER DIODE DRIVER w ith o u t p u t e n a b le SYNERG Y PRELIMINARY s y io o e lio o 3 SEMICONDUCTOR DESCRIPTION FEATURES Up to 1.25Gb/s operation The SY100EL1003 is a high speed current source for driving a sem iconductor laser diode in optical transm ission |
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25Gb/s SY100EL1003 | |
Contextual Info: V LASER DIODE DRIVER w ith o u t p u t e n a b le SYNERG Y PRELIMINARY s y io o e lio o 3 SEMICONDUCTOR DESCRIPTION FEATURES Up to 1.25Gb/s operation The SY100EL1003 is a high speed current source for driving a sem iconductor laser diode in optical transm ission |
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25Gb/s SY100EL1003 | |
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ic 5304Contextual Info: SEE J> MOTOROLA SC L O G I C MOTOROLA b3b7252 OGflflBflS 331 • M O T M ■ i S E M IC O N D U C T O R TECHNICAL DATA MC54/74HC373 O c ta l 3 -S ta te N o n in v e rtin g T ra n sp a re n t L a tch High-Perform ance Silicon-Gate C M O S The MC54/74HC373 is identical in pinout to the LS373. The device inputs are |
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b3b7252 MC54/74HC373 LS373. ic 5304 | |
74HC373MContextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MC54/74HC373 O ctal 3-S tate Noninverting Transparent Latch J SUFFIX C E R A M IC C A S E 732-03 High-Performance Silicon-Gate C M O S The M C 54/74H C 373 is identical in pinout to the LS373. The device inputs are compatible with standard C M O S outputs; with puilup resistors, they are compatible |
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MC54/74HC373 54/74H LS373. Je-----50% 74HC373M | |
Contextual Info: OP-215/883 DUAL PRECISION JFET-IN PU T OPERATIONAL AMPLIFIER P r e c is io n M o n o lit h ic s Inc. 1.0 SCOPE This specification covers the detail requirements for a dual precision JFET input operational amplifier. It is highly recommended that this data sheet be used as a baseline for new military or |
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OP-215/883 OP-215AJ/883 OP-215BJ/883 OP-215CJ/883 OP-215A2/883 OP-215BZ/883 OP-215CZ/883 OP-215BRC/883 MIL-M-38510^ OP-215) | |
42-PINContextual Info: LH5324A00 CMOS 24M 1.5M x 16 Mask-Programmable ROM FEATURES PIN CONNECTIONS • 1,572,864 words × 16 bit organization • Access time: 150 ns (MAX.) • Power consumption: Operating: 357.5 mW (MAX.) Standby: 550 µW (MAX.) • Static operation • TTL compatible I/O |
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LH5324A00 42-PIN LH5324A00 24M-bit 42DIP DIP042-P-0600) 42-pin, 600-mil | |
24M-BITContextual Info: CMOS 24M 1.5M x 16 Mask-Programmable ROM FEATURES PIN CONNECTIONS • 1,572,864 words x 16 bit organization 42-PIN DIP TOP VIEW • Access time: 150 ns (MAX.) • Power consumption: Operating: 357.5 mW (MAX.) Standby: 550 nW (MAX.) • Static operation • TTL compatible I/O |
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42-PIN 42-pin, 600-mil LH5324A00 24M-bit LH5324A00 600-mll | |
ic 5304 smd 8 pin
Abstract: Diode SMD SJ 36
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MIL-M-38510/32801 54LS242 54LS242 JM38510/32801BXA 54LS242/BXAJC ic 5304 smd 8 pin Diode SMD SJ 36 | |
1N3064
Abstract: 54LS242
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MIL-M-38510/32801 54LS242 JM38510/32801BXA 54LS242/BXAJC 1N3064 | |
Contextual Info: V LASER DIODE DRIVER WITH O UTPUT ENABLE SYNERG Y PRELIMINARY SY100EL1003 SEMICONDUCTOR DESCRIPTION FEATURES Up to 1,25Gb/s operation The SY100EL1003 is a high speed current source for driving a semiconductor laser diode in optical transmission applications. The output current modulation is DC voltage controlled. The modulation current is disabled |
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SY100EL1003 25Gb/s 16-pin SY100EL1003 | |
Contextual Info: 0=0 UC19431 UC29431 UC39431 UNITRÜDE Precision Adjustable Shunt Regulator FEATURES • Multiple On-Chip Programmable Reference Voltages • 0.4% Initial Accuracy • 0.7% Overall Reference Tolerance • 2.2V to 36.0V Operating Supply Voltage and User Programmable Reference |
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UC19431 UC29431 UC39431 UC19431 100mA T34asn | |
Contextual Info: LSI/CSI □ □ □ □ □ □ □ □ □ Since 1969 LSI Computer Systems, Inc. 1235 Walt Whitman Road, Melville, NV 11747 5 1 6 271-0400 FAX (5 1 6 ) 271 -0405 DELAYED-OFF LIGHT SWITCH WITH PROGRAMMABLE ON-TIMER April 1993 FEATURES: • Phase-Locked Loop Synchronization allows use in |
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50/60Hz 220VAC LS7338, Q5004L4 5304b0b DDD11SQ |