53098 Search Results

Contextual Info: Ordering number:EN3333 DSD015 Silicon Epitaxial Planar Type High-Voltage Switching Diode Features Package Dimensions • Ideally suited for use in hybrid ICs because of very compact package. · High breakdown voltage. unit:mm 1148 [DSD015] C:Cathode A:Anode

Contextual Info: Ordering number:EN2822 DSH015 Silicon Epitaxial Type High-Speed Switching Diode Features Package Dimensions • Very small-sized package permitting DSH015applied sets to be made small and slim. · Fast switching speed. unit:mm 1197 [DSH015] A:Anode C:Cathode

53098

Abstract: D218 DSA17 DSA17C DSA17G SANYO RECTIFIER
Contextual Info: Ordering number : ENN633E DSA17 Diffused Junction Type Silicon Diode DSA17 1.7A Power Rectifier Features • • • unit : mm 1085 [DSA17] 1.0 • Package Dimensions Plastic molded structure. Glass passivation for high reliability. Peak reverse voltage : VRM=200, 600V.

DSF10TB

Abstract: EN2523A DSF10T DSF10TE DSF10TG DSF10TL
Contextual Info: Ordering number:EN2523A DSF10T Diffused Junction Type Silicon Diode 1.0A Power Rectifier Features Package Dimensions • Meets automatic mounting requirements. · Plastic molded structure small size . · Peak reverse voltage : VRM=100 to 1000V. · Average rectified current : IO=1.0A.

SB20-03P

Contextual Info: Ordering number:EN2985 SB20-03P Schottky Barrier Diode 30V, 2A Rectifier Applications Package Dimensions • High frequency rectification switching regulators, converters, choppers . unit:mm 1163 [SB20-03P] Features · Low forward voltage (VF max=0.55V). · Fast reverse recovery time (trr max=20ns).

5609 transistor

Abstract: DATASHEET 5609 DATASHEET 5609 transistor transistor 5609 pin configuration transistor 5609 5609 t 5609 c 5609 t transistor 5609 datasheet z80
Contextual Info: Ordering number : EN*5609A CMOS IC LC374100SM, ST 4 MEG 524288 wordsx 8 bits Mask ROM Internal Clocked Silicon Gate Preliminary Overview Package Dimensions The LC374100SM and LC374100ST are 524,288-word × 8-bit organization (4,194,304-bit) mask programmable

DLA11C

Abstract: MARKING LA
Contextual Info: Ordering number : ENN2795B DLA11C Silicon Diffused Junction Type DLA11C 1.1A Ultrahigh-Speed Rectifier Features • • Supports automatic mounting and permits DLA11Capplied sets to be made smaller. Fast reverse recovery time and small switching loss. Peak reverse voltage : VRM=200V.

KT 819

Contextual Info: Ordering number:EN619D _DRA5 SA 0O I Silicon Diffused Juntion Type 5.0A Reverse Blocking Thyristor Features PdcloQQ Dimensions / / • Glass passivation for high reliability. um Lm m •Peak O H Ostale reverse voltage : 100 lo 600V. • Average ON-slalc current : 5A,

Contextual Info: Materials Declaration Data Sheet ASFLM,ASFLMB QFN 5.0 x 3.2 mm 37.1 4 Device Package Body Size Weight mg Lead Count Silica Fused Epoxy Resin Phenol Resin Carbon Black Item Item Leadframe base metal Copper (Cu) Iron (Fe) Phosphorus (P) Zinc (Zn) Leadframe plating

LB1991V

Abstract: SSOP24
Contextual Info: Ordering number : EN5792 Monolithic Digital IC LB1991V Three-Phase Brushless Motor Driver for Portable VCR Capstan Motors Overview The LB1991V is a 3-phase brushless motor driver IC that is optimal for driving the capstan motor in portable VCR products. • Speed control technique based on motor voltage and

SKIIP 33 nec 125 t2

Abstract: skiip 613 gb 123 ct RBS 6302 ericsson SKIIP 513 gb 173 ct THERMISTOR ml TDK 150M pioneer PAL 010a Project Report of smoke alarm using IC 555 doc SKiip 83 EC 125 T1 ericsson RBS 6000 series INSTALLATION MANUAL Ericsson Installation guide for RBS 6302
Contextual Info: Discontinued and Superseded Stock Number History. This document contains Discontinued and Superseded Stock Number History. The information is listed in the following format: Stock Number: The original RS Stock Number of the item. Brief Description: The Invoice Description of the item.

MFP14

Abstract: LC89960 LC89960M 3034A-MFP14
Contextual Info: Ordering number : EN4544A MOS IC LC89960, 89960M NTSC 1H Delay Line Overview Package Dimensions The LC89960 and LC89960M are delay lines and produce a 1H delayed signal for the NTSC format, with an external low-pass filter. unit: mm 3003A-DIP14 [LC89960] Functions

1004B

Abstract: DSF10T DSF10TB DSF10TC
Contextual Info: DSF10T Ordering number : EN2523C DSF10T Diffused Junction Type Silicon Diode 1.0A Power Rectifier Features • • • • Meets automatic mounting requirements. Plastic molded structure small size . Peak reverse voltage : VRM=100 to 200V. Average rectified current : IO=1.0A.

DSK10L

Contextual Info: Ordering number : ENN2855B DSK10 Diffused Junction Silicon Diode Designed for 5mm-pitch Automatic Insertion DSK10 1.0A Power Rectifier Features • • • • Package Dimensions Designed for 5mm-pitch automatic insertion. Small plastic molded structure 3mm body .

Contextual Info: Ordering number:EN2985 SB20-03P Schottky Barrier Diode 30V, 2A Rectifier Package Dimensions Applications • High frequency rectification switching regulators, converters, choppers . unit:mm 1163 [SB20-03P] Features · Low forward voltage (VF max=0.55V). · Fast reverse recovery time (trr max=20ns).

Contextual Info: Ordering number:EN2823 DSE015 Silicon Epitaxial Type High-Speed Switching Diode Features Package Dimensions • Very small-sized package permitting DSE015applied sets to be made small and slim. · Fast switching speed. unit:mm 1195 [DSE015] C:Cathode A:Anode

Contextual Info: Ordering number : EN*5088C CMOS 1C LC372100PP, PM, PT-10/20LV 2 MEG 262144 words x 8 bits Mask ROM Internal Clocked Silicon Gate Preliminary Overview Package Dimensions The LC 372100PP, LC 372100PM and LC372100PT are unit: mm 262,144-word x 8-bit organization (2,097,152-bit) mask

DSF10TL

Abstract: DSF10T DSF10TB DSF10TC DSF10TE DSF10TG DSF10TJ A4530
Contextual Info: DSF10T Ordering number : ENN2523B DSF10T Diffused Junction Type Silicon Diode 1.0A Power Rectifier Features • • • • Meets automatic mounting requirements. Plastic molded structure small size . Peak reverse voltage : VRM=100 to 1000V. Average rectified current : IO=1.0A.

DSB015

Contextual Info: Ordering number:EN1186D DSB015 Silicon Epitaxial Planar Type High-Speed Switching Diode Features Package Dimensions • Ideally suited for use in hybrid ICs because of smallsized package. · Fast switching speed. unit:mm 1148 [DSB015] C:Cathode A:Anode SANYO:CP

DSA10

Abstract: DSA10G DSA10J DSA10L DIODE 1.0A 1000V
Contextual Info: Ordering number:EN711D DSA10 Diffused Junction Type Silicon Diode 1.0A Power Rectifier Features Package Dimensions • Plastic molded type. · Peak Reverse Voltage : VRM=600 to 1000V · Average Rectified Current : IO=1A. unit:mm 1005 [DSA10] C:Cathode A:Anode

thyristor Q 720 To220

Abstract: 100U
Contextual Info: [O rdering number:ENl673A _ DRD3 IsAßroi Silicon Diffused Juntion Type 3.0A Reverse Blocking Thyristor "V # Package Dimensions j|pv,. Features •Glass piissivaiion lor high reliability. unirmi» •Peak OFF-siale reverse voilage : 1(H) lo 600V.

Contextual Info: Ordering number : EN2985B SB20-03P Schottky Barrier Diode http://onsemi.com 30V, 2A, Low IR, Single PCP Applications • High frequency rectification switching regulators, converters, choppers Features • • • • Fast reverse recovery time (trr max=20ns)

dip28-300

Abstract: bt 450 DIP28- 600
Contextual Info: Ordering number : EN5804A CMOS IC LC3564B, BS, BM, BT-70/10 64K 8192-word x 8-bit SRAM with OE, CE1, and CE2 Control Pins Overview The LC3564B, LC3564BS, LC3564BM, and LC3564BT are 8192-word × 8-bit asynchronous silicon gate CMOS SRAMs. These are full CMOS type SRAMs that adopt a

c 5088

Abstract: SOP32 data sheet LC372100PM LC372100PM-10 LC372100PM-20LV LC372100PP LC372100PP-10 LC372100PP-20LV LC372100PT LC372100PT-10
Contextual Info: Ordering number : EN*5088C CMOS IC LC372100PP, PM, PT-10/20LV 2 MEG 262144 words x 8 bits Mask ROM Internal Clocked Silicon Gate Preliminary Overview Package Dimensions The LC372100PP, LC372100PM and LC372100PT are 262,144-word × 8-bit organization (2,097,152-bit) mask