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    5343 TRANSISTOR Search Results

    5343 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    5343 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    5343 transistor

    Abstract: 2SA1980M 2SC5343M transistor 5343
    Text: 2SC5343M Semiconductor NPN Silicon Transistor Description • General small signal amplifier Features • Low collector saturation voltage : VCE sat =0.25V(Max.) • Low output capacitance : Cob=2pF(Typ.) • Complementary pair with 2SA1980M Ordering Information


    Original     		PDF 2SC5343M 2SA1980M O-92M KST-I002-002 5343 transistor 2SA1980M 2SC5343M transistor 5343

    5343 transistor

    Abstract: No abstract text available
    Text: 2SC5343M Semiconductor NPN Silicon Transistor Description • General small signal amplifier Features • Low collector saturation voltage : VCE sat =0.25V(Max.) • Low output capacitance : Cob=2pF(Typ.) • Complementary pair with 2SA1980M Ordering Information


    Original     		PDF 2SC5343M 2SA1980M 2SC5343M O-92M KST-I002-003 5343 transistor

    5343 transistor

    Abstract: transistor 2sc5343 2SC5343 equivalent 2sc5343 2SA1980S TRANSISTOR K 135 J 50 transistor 5343
    Text: BL Galaxy Electrical Production specification Silicon Epitaxial Planar Transistor FEATURES z 2SC5343 Pb Excellent hFE linearity Lead-free :hFE 2 =100(Typ) at VCE=6V,IC=150Ma :hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(Typ). z Low noise:NF=1Db(Typ).at f=1KHz. z Complementary pair with 2SA1980S.


    Original     		PDF 2SC5343 150Ma 2SA1980S. OT-23 BL/SSSTC022 5343 transistor transistor 2sc5343 2SC5343 equivalent 2sc5343 2SA1980S TRANSISTOR K 135 J 50 transistor 5343

    5343 transistor

    Abstract: 2SC5343M 2SA1980M transistor 5343
    Text: 2SC5343M NPN Silicon Transistor Description PIN Connection • General small signal amplifier Features B C E • Low collector saturation voltage : VCE sat =0.25V(Max.) • Low output capacitance : Cob=2pF(Typ.) • Complementary pair with 2SA1980M TO-92M


    Original     		PDF 2SC5343M 2SA1980M O-92M KSD-T0B002-000 5343 transistor 2SC5343M 2SA1980M transistor 5343

    Untitled

    Abstract: No abstract text available
    Text: 2SC5343M NPN Silicon Transistor Description PIN Connection • General sm all signal am plifier Features B C E • Low collect or sat urat ion volt age : VCE sat = 0.25V( Max.) • Low out put capacit ance : Cob = 2pF( Typ.) • Com plem ent ary pair wit h 2SA1980M


    Original     		PDF 2SC5343M 2SA1980M O-92M KSD-T0B002-000

    MMBT5343

    Abstract: No abstract text available
    Text: MCC MMBT5343-O MMBT5343-Y MMBT5343-G MMBT5343-L   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# TM Micro Commercial Components Features • • x x x Lead Free Finish/RoHS Compliant Note 1 ("P" Suffix designates


    Original     		PDF MMBT5343-O MMBT5343-Y MMBT5343-G MMBT5343-L OT-23 MMBT5343

    MMBT5343

    Abstract: No abstract text available
    Text: MCC MMBT5343-O MMBT5343-Y MMBT5343-G MMBT5343-L   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# TM Micro Commercial Components Features • • • x x x Lead Free Finish/RoHS Compliant "P" Suffix designates


    Original     		PDF MMBT5343-O MMBT5343-Y MMBT5343-G MMBT5343-L OT-23 MMBT5343

    MMBT5343

    Abstract: No abstract text available
    Text: MCC MMBT5343-O MMBT5343-Y MMBT5343-G MMBT5343-L   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# TM Micro Commercial Components Features • • • x x x Lead Free Finish/RoHS Compliant "P" Suffix designates


    Original     		PDF MMBT5343-O MMBT5343-Y MMBT5343-G MMBT5343-L OT-23 MMBT5343

    LM567

    Abstract: IC LM567 LM567 application note A 673 C2 transistor LM567 datasheet lm567 schematic diagram LM567CN datasheet LM567 lm567 applications LM567C
    Text: LM567/LM567C Tone Decoder General Description The LM567 and LM567C are general purpose tone decoders designed to provide a saturated transistor switch to ground when an input signal is present within the passband. The circuit consists of an I and Q detector driven by a voltage


    Original     		PDF LM567/LM567C LM567 LM567C CSP-9-111C2) CSP-9-111S2) CSP-9-111S2. IC LM567 LM567 application note A 673 C2 transistor LM567 datasheet lm567 schematic diagram LM567CN datasheet LM567 lm567 applications

    MMBT5343

    Abstract: No abstract text available
    Text: MCC MMBT5343-O MMBT5343-Y MMBT5343-G MMBT5343-L   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# TM Micro Commercial Components Features • • • x x x • Lead Free Finish/RoHS Compliant "P" Suffix designates


    Original     		PDF MMBT5343-O MMBT5343-Y MMBT5343-G MMBT5343-L OT-23 MMBT5343

    MMBT5343

    Abstract: No abstract text available
    Text: MCC MMBT5343-O MMBT5343-Y MMBT5343-G MMBT5343-L   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# TM Micro Commercial Components Features • • • x x x • Lead Free Finish/RoHS Compliant "P" Suffix designates


    Original     		PDF MMBT5343-O MMBT5343-Y MMBT5343-G MMBT5343-L OT-23 MMBT5343

    LM567 application note

    Abstract: LM567 application LM567 lm567cn data IC LM567 lm567 schematic diagram RETS567X touch-tone decoder 05fo LM567CN
    Text: LM567/LM567C Tone Decoder General Description The LM567 and LM567C are general purpose tone decoders designed to provide a saturated transistor switch to ground when an input signal is present within the passband. The circuit consists of an I and Q detector driven by a voltage


    Original     		PDF LM567/LM567C LM567 LM567C LM567 application note LM567 application lm567cn data IC LM567 lm567 schematic diagram RETS567X touch-tone decoder 05fo LM567CN

    RETS567X

    Abstract: IC LM567 LM567 PLL LM567CH lm567
    Text: LM567/LM567C October 13, 2011 Tone Decoder General Description The LM567 and LM567C are general purpose tone decoders designed to provide a saturated transistor switch to ground when an input signal is present within the passband. The circuit consists of an I and Q detector driven by a voltage


    Original     		PDF LM567/LM567C LM567 LM567C RETS567X IC LM567 LM567 PLL LM567CH

    MMS8050-L

    Abstract: 2SB1073R Bd882 2SD667C 2SD667AC 2SD669AC sot23-3 marking 63 zt5551 2SD468C marking 2sd1664
    Text: TM Micro Commercial Components SMALL SIGNAL&POWER TRANSISTORS MCC Part Number VCEO V IC (A) hFE @ VCE & IC VCE(sat) & VBE(sat) @ IC & IB hFE hFE VCE IC Min. Max. (V) (mA) VCE(sat) VBE(sat) Max.(V) Max.(V) fT @ VCE & IC Polarity IC IB fT Min. TPY. fT Max.


    Original     		PDF MJD31C MJD32C MJD42C MMJD2955 MMJD3055 MMS8050-L 2SB1073R Bd882 2SD667C 2SD667AC 2SD669AC sot23-3 marking 63 zt5551 2SD468C marking 2sd1664

    BUK954R4-40B

    Abstract: BUK964R4-40B BUK9E4R4-40B S1021 S 12051
    Text: BUK95/96/9E4R4-40B TrenchMOS logic level FET Rev. 02 — 13 October 2003 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive HPA TrenchMOS™ technology.


    Original     		PDF BUK95/96/9E4R4-40B OT404, OT226 BUK954R4-40B BUK964R4-40B BUK9E4R4-40B S1021 S 12051

    BUK95

    Abstract: BUK964R4-40B
    Text: D2 PA K BUK964R4-40B N-channel TrenchMOS logic level FET Rev. 03 — 8 February 2011 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product has been designed and qualified to


    Original     		PDF BUK964R4-40B BUK95 BUK964R4-40B

    BUK95

    Abstract: BUK954R4-40B
    Text: TO -22 0A B BUK954R4-40B N-channel TrenchMOS logic level FET Rev. 03 — 8 February 2011 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product has been designed and qualified to


    Original     		PDF BUK954R4-40B BUK95 BUK954R4-40B

    BUK95

    Abstract: BUK9E4R4-40B
    Text: I2P AK BUK9E4R4-40B N-channel TrenchMOS logic level FET Rev. 03 — 8 February 2011 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product has been designed and qualified to


    Original     		PDF BUK9E4R4-40B BUK95 BUK9E4R4-40B

    Untitled

    Abstract: No abstract text available
    Text: TO -22 0A B BUK954R4-40B N-channel TrenchMOS logic level FET Rev. 03 — 8 February 2011 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product has been designed and qualified to


    Original     		PDF BUK954R4-40B

    Untitled

    Abstract: No abstract text available
    Text: I2P AK BUK9E4R4-40B N-channel TrenchMOS logic level FET Rev. 03 — 8 February 2011 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product has been designed and qualified to


    Original     		PDF BUK9E4R4-40B

    Untitled

    Abstract: No abstract text available
    Text: D2 PA K BUK964R4-40B N-channel TrenchMOS logic level FET Rev. 03 — 8 February 2011 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product has been designed and qualified to


    Original     		PDF BUK964R4-40B

    LM567CN

    Abstract: ne567v lm567 schematic diagram IC LM567 lm567 an
    Text: LM567, LM567C www.ti.com SNOSBQ4C – MAY 2004 – REVISED MARCH 2012 LM567/LM567C Tone Decoder Check for Samples: LM567, LM567C FEATURES 500 kHz 1 • 2 • • • • • • 20 to 1 frequency range with an external resistor Logic compatible output with 100 mA current


    Original     		PDF LM567, LM567C LM567/LM567C LM567 LM567C LM567CN ne567v lm567 schematic diagram IC LM567 lm567 an

    Untitled

    Abstract: No abstract text available
    Text: ANALOG +2.5V to 5.5V, 230jiA Dual Rail-to-Rail DEVICES Voltage-Output DACs with Parallel Interface Preliminary Technical Data AD5332/AD5333/AD5342/AD5343* FEATURES AD5332: Dual 8-Bit DAC in 20-Lead TSSOP AD5333: Dual 10-Bit DAC in 24-Lead TSSOP AD5342: Dual 12-Bit DAC in 28-Lead TSSOP


    OCR Scan     		PDF 230jiA AD5332/AD5333/AD5342/AD5343* AD5332: 20-Lead AD5333: 10-Bit 24-Lead AD5342: 12-Bit 28-Lead

    texas instruments tip35

    Abstract: TIP35 TIP35C
    Text: TYPES TIP35, TIP35A, TIP35B. TIP35C N-P-N SINGLE-DIFFUSED MESA SILICON POWER TRANSISTORS X CO H FOR POWER-AMPLIFIER AND HIGH-SPEED-SWITCHING APPLICATIONS DESIGNED FOR COMPLEMENTARY USE WITH TIP36, TIP36A, TIP36B, TIP36C m C < •o r *o r r rn > mw O jH •


    OCR Scan     		PDF TIP35, TIP35A, TIP35B. TIP35C TIP36, TIP36A, TIP36B, TIP36C TIP35 TIP35A texas instruments tip35