S1021 Search Results

S1021

Contextual Info: T1/CEPT/ISDN-PRI TRANSFORMER P/N: S1021 DATA SHEET A. General Specifications: 1. Single port T1/E1 solution . 2. Configurable for TP and Coax cable termination . 3. Transfer-molded, IC-grade packaging . 4. Dual surface mount, small package . B. Electrical Specifications@ 25°C :

S1021

Contextual Info: Bothhandusa.com S1021 T1/CEPT/ISDN-PRI TRANSFORMER P/N: S1021 DATA SHEET Page : 1/ 1 Feature l l l l l l Turns Ratio Part PRI:SEC±2% Number S1021 Single port T1/E1 solution. Configurable for TP and Coax cable termination. Transfer-molded,IC -grade packaging.

Contextual Info: G E C P L E S S E Y mai7soi S l M I O \ I I I. I O K MIL-STD-1750A Execution Unit S S10211FD S Issuel Septem ber 1990 Features Block Diagram • MIL-STD-1750A Instruction Set Architecture • Full Performance over M ilitary Tem perature Range (-55°C to +125°C)

HI-POT

Abstract: electronic transformer S1021 126-CT
Contextual Info: T1/CEPT/ISDN-PRI TRANSFORMER P/N: S1021 DATA SHEET Page : 1/ 1 Feature l l l l l l Turns Ratio Part PRI:SEC±2% Number S1021 Single port T1/E1 solution. Configurable for TP and Coax cable termination. Transfer-molded,IC -grade packaging. Dual surface mount,small package.

GEC 44 3A

Contextual Info: G E C P L E S S E Y mai7502 S h M I O N D I (. I ( K Radiation Hard MIL-STD-1750A Control Unit > S10210FDS Issue 1 September 1990 Features • MIL-STD-1750A Instruction Set Architecture • Full Performance over Military Temperature Range • 12-Bit Microsequencer

Contextual Info: GEC PLESSEY S IM I ( \ I) ma3175i Memory Management Unit & Block Protect Unit I: (Advanced data) S10212ADF Issue 1.1 December 1990 Features Block Diagram M A 31751 • Radiation Hard CMOS/SOS Technology CPU B U SSES • User Configurable as Either a Memory

TSOP8

Abstract: si7401
Contextual Info: Si7820DN Vishay Siliconix N-Channel 200 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 200 RDS(on) () ID (A) 0.240 at VGS = 10 V 2.6 0.250 at VGS = 6 V 2.5 Qg (Typ.) 12.1 PowerPAK 1212-8 APPLICATIONS S 3.30 mm • Primary Side Switch - Telecom Power Supplies

Contextual Info: SPST SWITCHES Advanced Control Components The S1 series of single pole, single throw PIN diode switches span the frequency range of 10MHz to 18GHz and are available with absorptive or reflective inputs. The switches are available in a wide variety of standard frequency ranges from cost-effective narrowband to highperformance broadband. Each switch incorporates a TTL-compatible

EC2 WS-501

Abstract: WS-1080 ws353 WS-1070 WS-2028 WS-516 WS-3507 WS-3510 WS-3570 WS-20130
Contextual Info: lowprofile Wee SIP LUMPED CONSTANT SIVE DELAY LINE J # # # # # # Analog input and output D elays stable and precise 3-pin Wee S IP package .1 8 0 high Available in delays from 1ns to 2 5 0 n s Precise, fixed delay Available in im pedances of 5 0 , 1 0 0 , 2 0 0 ,

Si6463BDQ

Contextual Info: Si6463BDQ Vishay Siliconix P-Channel 1.8 V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) () ID (A) 0.015 at VGS = - 4.5 V - 7.4 0.020 at VGS = - 2.5 V - 6.3 0.027 at VGS = - 1.8 V - 5.5 • Halogen-free According to IEC 61249-2-21 Definition

Contextual Info: SbE D • 7 * ^ 2 3 7 OGB'îflm 2S7 ■ S G T H S G S -T H O M S O N M 5 4 H C Ï 12 LiOT KDD i M 7 4 H C 1 12 6 S-THOMSON ’T-HÙ-ÔT-OT DUAL J-K FLIP FLOP WITH PRESET AND CLEAR ■ HIGH SPEED fMAX = 59 MHz (Typ. at VCC= 5V LOW POWER DISSIPATION Ice = 2 jiA at TA = 25°C

si3865cdv

Abstract: si3865
Contextual Info: New Product Si3865CDV Vishay Siliconix Load Switch with Level-Shift FEATURES PRODUCT SUMMARY VDS2 V (VIN) RDS(on) () ID (A) 0.060 at VIN = 4.5 V 2.8 1.8 to 12 0.095 at VIN = 2.5 V 2.2 0.130 at VIN = 1.8 V 1.9 • Halogen-free According to IEC 61249-2-21

Contextual Info: SQ4470EY Vishay Siliconix Automotive N-Channel 60 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition 60 RDS(on) () at VGS = 10 V 0.012 • TrenchFET Power MOSFET RDS(on) () at VGS = 6 V 0.014

Contextual Info: SQM120N04-03 Vishay Siliconix Automotive N-Channel 40 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • Package with Low Thermal Resistance • Compliant to RoHS Directive 2002/95/EC

Contextual Info: SQ4953EY Vishay Siliconix Automotive Dual P-Channel 30 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition - 30 RDS(on) () at VGS = - 10 V 0.045 • TrenchFET Power MOSFET RDS(on) () at VGS = - 4.5 V

Contextual Info: SQM120N04-04 Vishay Siliconix Automotive N-Channel 40 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition 40 RDS(on) () at VGS = 10 V 0.0035 ID (A) • TrenchFET Power MOSFET 120 Configuration

SQ4953EY

Contextual Info: SQ4953EY Vishay Siliconix Automotive Dual P-Channel 30 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition - 30 RDS(on) () at VGS = - 10 V 0.045 • TrenchFET Power MOSFET RDS(on) () at VGS = - 4.5 V

sq2310es

Abstract: SQ2310ES-T1-GE3
Contextual Info: SQ2310ES Vishay Siliconix Automotive N-Channel 20 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () at VGS = 4.5 V 0.030 RDS(on) () at VGS = 2.5 V 0.034 RDS(on) () at VGS = 1.5 V 0.042 ID (A) 6 Configuration Single D TO-236 (SOT-23)

sqm100n04-3m5-ge3

Contextual Info: SQM100N04-3m5 Vishay Siliconix Automotive N-Channel 40 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition 40 RDS(on) () at VGS = 10 V 0.0035 ID (A) • TrenchFET Power MOSFET 100 Configuration

Contextual Info: Si7820DN Vishay Siliconix N-Channel 200 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 200 RDS(on) () ID (A) 0.240 at VGS = 10 V 2.6 0.250 at VGS = 6 V 2.5 Qg (Typ.) 12.1 PowerPAK 1212-8 APPLICATIONS S 3.30 mm • Primary Side Switch - Telecom Power Supplies

si3865

Abstract: 69010 SI3865CDV
Contextual Info: New Product Si3865CDV Vishay Siliconix Load Switch with Level-Shift FEATURES PRODUCT SUMMARY VDS2 V (VIN) RDS(on) () ID (A) 0.060 at VIN = 4.5 V 2.8 1.8 to 12 0.095 at VIN = 2.5 V 2.2 0.130 at VIN = 1.8 V 1.9 • Halogen-free According to IEC 61249-2-21

DS1023-025

Abstract: DS1023-200 pulse width measure counter delay clock DS1023 DS1023-100 DS1023-25 DS1023-50 DS1023-500 DS1023S
Contextual Info: DS1023 DALLAS s e m ic o n d u c to r DS1023 8 -B it Programmable Timing Element FEATURES PIN ASSIGNMENT E E E E E E E E IN • O n -c h ip R eference delay LE • C onfigurable as Delay Line, Pulse W idth Modulator, or Free-runn ing O scillator Q/P0 CLK/P1

Contextual Info: Si6459BDQ Vishay Siliconix P-Channel 60 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 60 RDS(on) () ID (A) 0.115 at VGS = - 10 V - 2.7 0.150 at VGS = - 4.5 V - 2.4 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET

Contextual Info: Si6463BDQ Vishay Siliconix P-Channel 1.8 V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) () ID (A) 0.015 at VGS = - 4.5 V - 7.4 0.020 at VGS = - 2.5 V - 6.3 0.027 at VGS = - 1.8 V - 5.5 • Halogen-free According to IEC 61249-2-21 Definition