535 SOT23 Search Results

Philips ECG125

Abstract: t75 hv diode ecg125 diode ECG125 ECG605 Z6 DIODE ECG558 ECG156 ECG584 schottky ECG1151
Contextual Info: PHILIPS E C 6 INC 54E ]> • bbS3ti2a Q00720S 535 m i Q G Diodes and Rectifiers General Purpose ECG Type Peak Reverse Voltage PRV Max V Description Average Rectified Forward Current lO Max Forward Current Repetitive Peak IFRM Max Reverse Recovery Time trr

diode ECG125

Abstract: CI 3060 elsys ECG113A ci 3060 ECG577 Z6 DIODE DIODE GENERAL PURPOSE DET 200 PRV SCR ECG117A ECG576 ECG584 schottky
Contextual Info: PHILIPS E C 6 INC 54E ]> • b b S 3 ti2a Q00720S 535 m i Q G Diodes and Rectifiers General Purpose ECG Type Peak Reverse Voltage PRV Max V Description Average Rectified Forward Current lO Max Forward Current Repetitive Peak IFRM Max Reverse Recovery Time

kps-5130pd7c

Abstract: KPS-3227SP1C KA-2735ESGC KM2520CGCK03 KPS5130 KPT-1608SURCK SMD 3528 RGB KPB-3025SRCGKC KA-4040SURC kpa-1606
Contextual Info: P 2-3 HIGH CURRENT LED LAMPS P 4-10 SURFACE MOUNT LED LAMPS P 21 THROUGH HOLE LED LAMPS P 22-23 SMD INFRARED EMITTING DIODES P 24 SMD PHOTOTRANSISTORS P 25 AMBIENT LOGHT SENSOR & COLOR SENSOR P 26-33 SMD TAPE SPECIFICATIONS P 34-36 RECOMMENDED SOLDERING PATTERN

sot-223 93

Abstract: 3301 sot-89 3301-1000 5201 sot223
Contextual Info: Package Information Package Types QFP Quad Flat Package The following are the package types and widths offered by Holtek. Pin Count DIP (Dual In-line Package) Pin Count Package Width Package Width 44, 48 10mm ´ 10mm 52 14mm ´ 14mm 8, 14, 16, 18, 20 300mil

on semiconductor marking code 518

Contextual Info: SEMICONDUCTOR KIC7508~7560M/T5 TECHNICAL DATA Analog CMOS Integrated Circuits IC for CMOS Detector Monolithic IC KIC75* Series This IC functions in a variety of CPU systems and other logic systems, to detect supply voltage and reset the system accurately when the power is

MA4T64500

Abstract: 4558 MA4T64535 557 sot143 micro X
Contextual Info: Silicon Low Noise Transistors Silicon Bipolar High fT Low Noise Microwave Transistors M A 4T64500 Series Features • fT to 9 GHz MA4T64535 Micro-X Low Noise Figure I •High Associated Gain ■Hermetic and Surface Mount Packages Available + ■Can be Screened to JANTX, JANTXV

DIODE S2E

Contextual Info: N T E ELE CTRONICS TNC — S2E D • I r I . C H bw .ü b 4 3 1 2 S e GQQ2b3S ‘H S H N T E t N C r f A L ,r : U B r U T-39-01 Maxim um Average Forw ard Currant Ampe) Max Peek Surge Forw ard Currant (Ampe) Maxim um Forward Vortage Drop (Volts) R ecovery

MA4T64400

Abstract: low noise transistors MA4T645 MA4T644
Contextual Info: Silicon Low Noise Transistors Silicon Bipolar High fT Low IVoise Microwave Transistors M A4T64400 Series Features MA4T64435 - fT to 11 G H z Micro-X L o w N o ise F igu re at Low B ias V o lta g e H igh A sso cia te d G ain • H e rm e tic and S u rfa c e M o u n t

SSOP48W

Abstract: SSOP20N 18w sot23 transistor TSSOP16 MO-150 MO-187 MO-220 MS-013 SSOP20S 103001 for mouse
Contextual Info: Package Information Package Types The following are the package types and widths offered by Holtek. Pin Count DIP Dual In-line Package 80, 100, 128 14mm ´ 20mm 208 28mm ´ 28mm Pin Count Package Width 8, 14, 16, 18, 20 300mil 24, 28, 32, 40, 42 600mil 28, 32, 40 (Ceramic)

1235Z

Abstract: 35Z diode KV1226 KV1236Z KV1236 toko VARIABLE CAPACITORS V1420 KV1235Z TOKO sot-23 Toko KV1226
Contextual Info: 3bE » TOKO AMERICA INC • TDbTlaBS D0D1S73 S ■ TAI T 'O l'l^ TO K O DI0DES Variable Capacitance Diode Application For AM, FM, UHF AM FM t f — KffliÉSU— K • KV1230Z • KV1234Z • AM Variable Capacitance KV1235Z KV1236Z • KV1250 • KV1260 •

7sz04

Contextual Info: S E M IC O N D U C T O R tu NC7SZ04 TinyLogic UHS Inverter General Description Features The NC7SZ04 is a single inverter from Fairchild’s Ultra High Speed Series of TinyLogic™ in the space saving SOT23 package. The device is fabricated with advanced CMOS

NF1100

Contextual Info: BCW31 NPN EPITAXIAL SILICON TRAN SISTO R G EN ERAL PU RPO SE TRANSISTOR SOT-23 A BSO LU TE MAXIMUM RATINGS TA=25'C Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation Storage Temperature

KA-2735

Abstract: KA-2735ESGC KM-23YD-F KA-2735SURKMGC
Contextual Info: SURFACE MOUNT LED LAMPS KA-2735 KM-23-F Part No. Material λD nm Lens Type Iv (mcd) @20mA Min. Typ. View ing Angle Dimension 2θ θ 1/2 2.7mm x 3.5mm (Bi-Color) GaAsP/GaP 625 7 30 120° water clear KA-2735ESGC GaP 568 7 30 InGaAlP 635 70 200 KA-2735SURKMGC

MMBT4123

Abstract: transistor sot-23 marking L8
Contextual Info: SAM S UN G SEM ICO NDUCTOR INC MMBT4123 1ME 0 | ^4145 00072t*S 5 | NPN EPITAXIAL SILICON TRANSISTOR T-aq-tì GENERAL PURPOSE TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Symbol Rating Unit Co#ector-Base Voltage Collector-Emitter Voltage

ZF SOT23

Contextual Info: SOT-23 SURFACE MOUNT LED LAMP Part Number: KM-23VGC-Z-F PRELIMINARY SPEC Green ATTENTION OBSERVE PRECAUTIONS FOR HANDLING ELECTROSTATIC DISCHARGE SENSITIVE DEVICES Features Description z SOT-23 PACKAGE SURFACE MOUNT LED LAMP. The Green source color devices are made with InGaN Light

Substrate alumina

Contextual Info: M A X IM U M RATIN G S EACH DIODE Rating Unit Symbol Value Reverse Voltage Vr 70 Vdc Forward Current if 200 m Adc iFM(surge) 500 mAdc Symbol Max Unit Pd 225 mW 1.8 mwrc R#j a 556 °C/W pd 300 mW Peak Forward Surge Current BAW56LT1* CASE 318-07, STYLE 12

KV1234Z

Contextual Info: 23 TOKO DIODES ¥ 4* - K Variable Capacitance Diodes Application For AM Layout KV1225 KV1226 KV1230Z KV1234Z KV1235Z KV1236Z KV1260 KV1260-2 KV1260M KV1280-1 KV1280-2 KV1281-1 KV1281-2 KV1281-3 Tun. Tun. VCO Tun. Tun. Tun. Tun. Tun. Tun. Tun. Tun. VCO Tun.

transistor sot-23 marking L8

Contextual Info: SAMSUNG SEMICONDUCTOR INC ! MMBT4123 | 7 1 i.U « e BOOM M . s j NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS Ta=25°C Symbol Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage

fet n-channel pin configuration

Abstract: transistor 537 b 360 DMOSFET Silicon N-Channel Junction FET sot23 vertical mosfet BSS138 MBB180
Contextual Info: 71 lDfl2b 0 0 b 7 ô li5 LTD « P H I N Philips Semiconductors BSS138 Data sheet status Prelim inary specification date of issue September 1990 FEATURES N-channel enhancement mode vertical D-MOS FET PIN CO NFIGURATION PINNING - SOT223 PIN • Low threshold voltage

MMBF4091

Abstract: 4092 4093 PN4092 4091
Contextual Info: PN4091 / 4092 / 4093 / MMBF4091 / 4092 / 4093 MMBF4091 MMBF4092 MMBF4093 PN4091 PN4092 PN4093 G D G S TO-92 S SOT-23 D Mark: 61J / 61K / 61L NOTE: Source & Drain are interchangeable N-Channel Switch This device is designed for low level analog switching, sample

BF550

Abstract: transistor marking code 325 0024-B
Contextual Info: • bbSBTBi □ □ S 4 b in aaT m a p x N AUER PHILIPS/DISCRETE BF550 b7E D SILICON PLANAR EPITAXIAL TRANSISTOR P-N-P transistor, in a microminiature plastic envelope, intended for applications in thick and thin-film circuits. This transistor is primarily intended for use in i.f. detection applications.

DIODE SW-05

Contextual Info: DIODES & RECTIFIERS GENERAL PURPOSE Material Description and Application Case Style Dlag. No. Maximum Peak Reverse Voltage Volts pRV If !f s m VF Irr 109 Ge Gen Purp, Fast Switch D07 91 100 0.2 0.5 1 - 110MP Ge Gen Purp, AFC, Matched Diode Pair D07 91 40

Contextual Info: 19-1586; Rev 0; 7/00 Low-Voltage, Step-Down DC-DC Converters in SOT23 Internal synchronous rectification greatly improves efficiency and eliminates the external Schottky diode required in conventional step-down converters. Both devices also include internal digital soft-start to limit

common anode schottky to220

Abstract: diode d07 anode common fast recovery diode c 92 M - 02 DIODE 3a ultra fast diode D041 SE 40 RECTIFIER Super matched pair 519 SOT23 anode common fast recovery diode dual
Contextual Info: DIODES & RECTIFIERS GENERAL PURPOSE NTE Type No. Material Description and Application Case Style Dlag. No. Maximum Peak Reverse Voltage Volts Maximum Average Forward Current (Amps) Max Peak Surge Forward Current (Amps) Maximum Forward Voltage Drop {Volts)