DMOSFET Search Results

Contextual Info: SHD234001 SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 259 REV - QUAD, N-CHANNEL ENHANCEMENT-MODE VERTICAL DMOSFETs FEATURES: œ 4 independent channels œ 4 electrically isolated dice œ Low threshold œ High input impedance œ Low input capacitance œ Fast switching speed

Contextual Info: SO T8 9 BSS87 200 V, N-channel vertical D-MOS transistor 9 December 2014 Product data sheet 1. General description N-channel enhancement mode vertical Double-Diffused Field-Effect Transistor DMOSFET in a SOT89 (SC-62) medium power and flat lead Surface-Mounted Device

DMOSFET

Abstract: ZCP0545A
Contextual Info: P-CHANNEL ENHANCEMENT MODE VERTICAL IGBT ZCP0545A ELECTRICAL CHARACTERISTICS at Tamb = 25°C unless otherwise stated . MAX. This IGBT combines the high input impedance of the DMOSFET with the high current density of the BJT. PARAMETER SYMBOL MIN. UNIT CONDITIONS.

westinghouse transistors

Contextual Info: IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. 55, NO. 8, AUGUST 2008 1807 A 10-kV Large-Area 4H-SiC Power DMOSFET With Stable Subthreshold Behavior Independent of Temperature Robert S. Howell, Member, IEEE, Steven Buchoff, Stephen Van Campen, Member, IEEE, Ty R. McNutt, Member, IEEE, Andris Ezis, Senior Member, IEEE, Bettina Nechay, Member, IEEE,

Contextual Info: N-CHANNEL ENHANCEMENT MODE VERTICAL IGBT ISSUE 2 - M A Y 94 _ This IGBT combines the high input impedance of the DMOSFET with the high current density of the BJT. FE A TU R E S * E x tre m e ly lo w on state v o lta g e * N o ne ed to d e ra te fo r h ig h e r te m p e ra tu re s

Contextual Info: 1998 • SHORT FORM CATALOG - Revision SENSITRON SEMICONDUCTOR SHD23401 - 60 Volt - Similar to Industry Standard TN0606-001 SHD274002 -100 Volt - Similar to Industry Standard TN2510-002 QUAD, N-CHANNEL ENHANCEMENT-MODE VERTICAL DMOSFETs Features: • • •

SD400

Abstract: SD400BD SD402 SD402BD XSD400 XSD402
Contextual Info: SD400 / SD402 CALOGIC CORP lfll443S2 000024^ L m C G C MAE D caloric High-Speed Analog N-Channel/Enhancement-Mode DMOSFETS CORPORATION \J SD400/SD402 T - 3 5 - 2 . 5 FEATURES DESCRIPTION • • • • The SD400 and SD402 are N-Channel Enhancement Mode devices processed utilizing Calogics proprietary high speed,

HA202

Contextual Info: High-Speed Analog N-Channel Enhancement-Mode DMOSFETS SD200/SD201 /SD202/SD203/SSTSD201 /SSTSD203 FEATURES DESCRIPTION • High g a in . 8.0 dB min @ 1 GHz • Low Noise. 5.0 dB max @ 1 GHz

Contextual Info: High-Speed Analog N-Channel Enhancement-Mode DMOSFETS calocflc CORPORATION v SD200/SD201 /SD202/SD2Û3/SSTSD201 /SSTSD203 FEATURES DESCRIPTION • High g a in . 8.0 dB min @ 1 GHz • Low Noise. 5.0 dB max @ 1 GHz

Contextual Info: SHD234001 SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 259 REV - QUAD, N-CHANNEL ENHANCEMENT-MODE VERTICAL DMOSFETs FEATURES: œ 4 independent channels œ 4 electrically isolated dice œ Low threshold œ High input impedance œ Low input capacitance œ Fast switching speed

Contextual Info: High-Speed Analog N-Channel/Enhancement-Mode DMOSFETS calocflc CORPORATION SD400/SD402 FEATURES • • • • DESCRIPTION Fast switching. ton <1ns Low capacitance. Crss 0.3 pF typ

DMOSFET

Abstract: high speed solid state relay DN3145N8 D-MOSFET depletion-mode DN3145 Low On-Resistance - Solid State Relays
Contextual Info: Product Summary Sheet DN3145 N-Channel Depletion-Mode DMOSFET SMPS Start-Up Circuit Solid State Relays Current Limiter Up to 450V Applications - ILED DN3145N8 - Solid state relays - Converters - Constant current sources DN3145N8 To Vcc of PWM IC + Photovoltaic

ZVN4106F

Abstract: MARKING MZ ZVN4106FTA Marking MZ ZVN4106F
Contextual Info: A Product Line of Diodes Incorporated ZVN4106F 60V N-CHANNEL ENHANCEMENT MODE VERTICAL DMOSFET IN SOT23 Features Mechanical Data • • • • • • • • BVDSS > 60V RDS on ≤ 2.5Ω @ VGS = 10V Maximum continuous drain current ID = 200mA Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

Contextual Info: SO T8 9 BSS192 240 V, P-channel vertical D-MOS transistor 12 December 2014 Product data sheet 1. General description P-channel enhancement mode vertical Double-Diffused Field-Effect Transistor DMOSFET in a SOT89 (SC-62) medium power and flat lead Surface Mounted Device

Contextual Info: TN2640 Supertex Inc. Low Threshold Preliminary N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package R d S ON V GS(th) '□(ON) «C s (max) (max) (min) SO-8 TO-92 Diet 400V 5.0fi 2.0V 2.0A TN2640LG TN2640N3 TN2640ND M IL visual screening available.

to 206af

Abstract: to-206af sd210 206af SD214 rings To206AF
Contextual Info: 3bE D TELEDYNE COMPONENTS ÔIlTbQS 00077^0 S BITSC 'T-lÇ-lÇ WTELEDYNE COMPONENTS SD210 SD211 SD212 SD213 SD214 SD215 N-CHANNEL ENHANCEMENT-MODE DMOS FET SWITCHES FEATURES ABSOLUTE MAXIMUM RATINGS • ■ ■ V ds High Input to Output Isolation—120dB typical

a4954

Abstract: A4954ELP-T FAST DMOS FET Switches LSS12 LSS-34 A4954ELPTR-T
Contextual Info: A4954 Dual Full-Bridge DMOS PWM Motor Driver Description Features and Benefits • Low RDS on outputs • Overcurrent protection (OCP) ▫ Motor short protection ▫ Motor lead short to ground protection ▫ Motor lead short to battery protection • Low Power Standby mode

mosfet 1500v for smps

Abstract: VIPower DMOSFET mosfet 1500v transistor bipolar driver schematic bipolar transistor 1500v mosfet schematic dc motor driver emitter switched bipolar transistor series connection of mosfet "gate voltage" negative voltage in a ratio of resistances of the resistors
Contextual Info: DISCRETE AND STANDARD ICs GROUP VIPOWER M3 A NEW SMART POWER TECHNOLOGY FOR HIGH VOLTAGE, HIGH SPEED APPLICATIONS A fter several years of experience using the well consolidated VIPower M0 and M1 technologies, ST is now introducing the innovative, versatile and cost-effective,

DMOSFET

Abstract: ZCN0545A
Contextual Info: ZCN0545A N-CHANNEL ENHANCEMENT MODE VERTICAL IGBT ZCN0545A ISSUE 2 – MAY 94 ELECTRICAL CHARACTERISTICS at Tamb = 25°C unless otherwise stated . PARAMETER SYMBOL MIN. Forward Drain-Source Breakdown Voltage BVDSS 450 TYP. MAX. UNIT CONDITIONS. V VGS=0V Reverse Drain-Source

HIP4080 amplifier circuit diagram class D

Abstract: class d amplifier schematic hip4080 jfet normally off to220 mosfet L 3055 HIP4080 ITL5-1 dual jfet transistor array AN9404 oscilloscope schematic EAS 200 Switching Power supply with HIP4080A
Contextual Info: No. AN9539 Intersil Intelligent Power May 1996 HIP2060, N-Channel Half-Bridge Power MOSFET Array Author: Edwin C. Jabillo Abstract The HIP2060 is a dual MOSFET array topology in a half-bridge configuration which represents a new innovation of power semiconductor devices that integrates two matched power transistors in a chip. The HIP2060 power MOSFET array is an

Simple PSpice Models Let You Simulate Common Battery

Abstract: 220 microfarad 12v capacitor inductors 33 micro henry transistor 2S D 716 inductors 10 micro henry 330 micro henry MEPCO electra 104 TANTALUM capacitor Cer cap 100uf 4600 fet transistor
Contextual Info: TECHNICAL INFORMATION INCREASING RELIABILITY OF SMD TANTALUM CAPACITORS IN LOW IMPEDANCE APPLICATIONS by David Mattingly Applications Engineer Myrtle Beach, SC Abstract: High dv/dt conditions in low impedance circuits using surface mount tantalum capacitors is discussed.

DMOSFET

Abstract: "Optical Coupler" IEC286 LETEX LT210 IL-100 Photo MOS Relay IEC286-3 LT211 ttl relay driver circuits
Contextual Info: Photo DMOS-FET Relay Description The LT210 is a miniature 1-Form A solid state relay in a 4 pin SOP package that employs optically coupled MOSFET technology to provide 1500V of input to output isolation. The Input of optical coupler been controlled by a highly efficient GaAlAs infrared LED and MOS FETs on the output side.

factors on which internal internal resistance of a cell depends experiment

Abstract: Simple PSpice Models Let You Simulate Common Battery 104 TANTALUM capacitor nec capacitor 220 microfarad A 16V avx taj MOSFET 2906 100NS LTC1154 22UF 47UH
Contextual Info: TECHNICAL INFORMATION INCREASING RELIABILITY OF SMD TANTALUM CAPACITORS IN LOW IMPEDANCE APPLICATIONS by David Mattingly Applications Engineer Myrtle Beach, SC Abstract: High dv/dt conditions in low impedance circuits using surface mount tantalum capacitors is discussed.

A4950

Contextual Info: A4950 Full-Bridge DMOS PWM Motor Driver Description Features and Benefits • Low RDS on outputs • Overcurrent protection (OCP) ▫ Motor short protection ▫ Motor lead short to ground protection ▫ Motor lead short to battery protection • Low Power Standby mode