54400AN Search Results

M3620

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MCM36204 2M x 36 Bit ECC Dynamic Random Access Memory Module for Error Correction Applications T h e M C M 36204 is a 72M dynam ic random a ccess m em ory D RAM m odule o rganized as 2,097,152 x 36 bits. T h e m odule is a double-sided 72-lead single-inline m em ory m odule (SIM M ) consisting of eighteen M C M 54400AN D RAM s

TP 3212 TRW

Abstract: MCM54400A 3206m L1AA 54400AN70 54400AN
Contextual Info: MO TO RO LA SEMICONDUCTOR TECHNICAL DATA 1M x 4 CMOS Dynamic RAM MCM54400A MCM5L4400A Fast Page Mode The MCM54400A is a 0.7|j CMOS high-speed dynamic random access memory. It is organized as 1,048,576 four-bit words and fabricated with CMOS siiicon-gate process

Contextual Info: IV I K J I U n U L M SEMICONDUCTOR TECHNICAL DATA MCM40100 MCM40L100 1M x 40 Bit Dynamic Random Access Memory Module for Error Correction Applications The M C M 40100 and M C M 40L100 are 40M dynam ic random access m em ory DRAM m odules organized as 1,048,576 x 40 bits. The m odule is a 72-lead single­

MCM32230SH60

Abstract: MCM32230SH70 U0-U15
Contextual Info: M O TO RO LA SEMICONDUCTOR TECHNICAL DATA MCM32230 2M x 32 Bit Dynamic Random Access Memory Module The M C M 32230 is a 64M dynam ic random a ccess m em ory D RAM m odule organized as 2 ,097,152 x 32 bits. The m odule is a 72-lead double sided sin g le ­

MCM32130SH60

Abstract: M5440 M54400 MCM32130-70
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MCM32130 MCM32L130 1M x 32 Bit Dynamic Random Access Memory Module The M CM 32130 is a 32M dynam ic random access m em ory DRAM module organized as 1,048,576 x 32 bits. The m odule is a 72-lead single-in-line m em ory

54400AN

Contextual Info: i v iv s i v n v u n • SEMICONDUCTOR TECHNICAL DATA MCM40200 MCM40L200 2M x 40 Bit Dynamic Random Access Memory Module for Error Correction Applications The M CM 40200 and M C M 40L200 are 80M dynam ic random access m em ory DRAM m odules organized as 2,097,152 x 40 bits. The module is a double-sided

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MCM54400A-V Advance Information 1M x 4 CMOS Dynamic RAM N PACKAGE 300 M IL SOJ CASE 822-03 Fast Page Mode, 3.3 V Power Supply The MCM54400A-V is a 0.7n CMOS high-speed dynamic random access memory. It is organized as 1,048,576 four-bit words and fabricated with CMOS silicon-gate

K2545

Abstract: MCM54400A-C
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MCM54400A-C Advance Information 1 M x 4 CMOS Dynamic RAM Fast Page Mode Operating Temperature - 40 to + 85°C The MCM54400A is a 0.7^ CMOS high-speed dynamic random access memory. It is organized as 1,048,576 fou r-b it words and fabricated with CMOS silicon-gate

9L14

Abstract: MCM91430S70
Contextual Info: iv iv s i u n u u M • SEMICONDUCTOR TECHNICAL DATA 1M x 9 Bit Dynamic Random Access Memory Module MCM91430 MCM9L1430 The M C M 91430 and M CM 9L1430 are 9M dynam ic random access mem ory DRAM m odules organized as 1,048,576 x 9 bits. The m odules are 30-lead single-in­

MCM54400A-C

Abstract: 54400AN M54400
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MCM54400A-C Advance Information 1M x 4 CMOS Dynamic RAM Fast Page Mode Operating Temperature - 40 to + 85°C The MCM54400A is a 0.7|i CMOS high-speed dynamic random access memory. It is organized as 1,048,576 fo u r-b it words and fabricated with CMOS siiicon-gate

CM32230

Abstract: 32L230 3223-07
Contextual Info: SEMICONDUCTOR TECHNICAL DATA MCM32230 MCM32L230 2M x 32 Bit Dynamic Random Access Memory Module The M C M 32230 is a 64M dynam ic random access mem ory DRAM module organized as 2,097,152 x 32 bits. The module is a 72-lead double sided single­ in-line m em ory module (SIM M) consisting of sixteen M C 54400AN DRAMs

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MCM40100 1M x 40 Bit Dynamic Random Access Memory Module for Error Correction Applications The M C M 40100 is a 40M dynam ic random a ccess m em ory D RAM m odules o rganized as 1,048,576 x 4 0 bits. The m odule is a 72-lead single-in-line m em ory