54F21 Search Results

Contextual Info: PRODUCT PREVIEW SN 54F21, SN74F21 DUAL 4-INPUT POSITIVE AND GATES D2932, MARCH 1987 Package Options Include Plastic "Small Outline” Packages, Ceramic Chip Carriers, and Standard Plastic and Ceramic 300-mil DIPs * S N 5 4 F 2 1 . . . J PACKAGE S N74F21 . D OR N PACKAGE

Contextual Info: 54F219,74F219 54F219 74F219 64-Bit Random Access Memory with TRI-STATE RM Outputs Literature Number: SNOS173A 54F 74F219 64-Bit Random Access Memory with TRI-STATE Outputs General Description Features The ’F219 is a high-speed 64-bit RAM organized as a

M38510 10102BCA

Abstract: SCX6206 marking code E5 SMD ic jm38510/10101bga SCX6B48AIS SNJ54LS165J JM38510/30004bca JM38510/10102BCA JM38510/10102BIA 946DMQB
Contextual Info: N ENHANCED SOLUTIONS DESIGN/PROCESS CHANGE NOTIFICATION formerly Military & Aerospace Division PCN Nr: 2000 Listing GIDEP Nr: GIDEP Category: Issued: 01/24/2000 TRB Nr: Product ID (Description): Proposed Date of Change: Description of Change: Effect of Change:

Motorola transistor smd marking codes

Abstract: 7900801CA lm6482a 5962-8993001MIA replacement for 11c90 TRANSISTOR SMD MARKING CODE QA LM311 SMD JM38510/10305BEA LM714h Motorola semiconductor smd marking codes
Contextual Info: N MILITARY / AEROSPACE DESIGN/PROCESS CHANGE NOTIFICATION PCN Nr: 1998 Listing GIDEP Nr: GIDEP Category: Issued: 01/06/98 TRB Nr: This is to advise you that a Design and/or Process Change will be made to the following MIL/AERO product s : Product ID (Description):

54F21

Abstract: SNJ54F21J 175C snj54f21fk Marking 7AW 7aw marking
Contextual Info: REVISIONS o LTR oEscnpnoN DATE YR-MO-M APPROVED REV SHEET REV SHEET REV SIXTUS OF SHEETS REV SHEET PMCWA TO PREPARED BY ~ Ijjm Jd . s y fjo b STANDARDIZED MILITARY DRAWING THIS DRAWMG IS AVAILABLE FOR USE BY ALL DB>ARTMENTS AND AGENOES O f THE DEPARTMENT OF DEFENSE

74F161 PC

Abstract: 74F163PC 74f500 74f558 74F164PC 74F548PC 74F138d 74F547PC transistor f630 74F253DC
Contextual Info: F a ir c h ild A d v a n c e d S c h o t t k y T L $ 3. HANDLING PRECAUTIONS FOR SEMICONDUCTOR COMPONENTS The follow ing handling precautions should be observed for oxide isolation, shallow junction processed parts, such as FAST or 100K ECL: 1. All Fairchild devices are shipped in conducting foam or anti­

54F219DLQB

Abstract: 54F219 54F219FLQB 54F219LLQB F189
Contextual Info: MICROCIRCUIT DATA SHEET Original Creation Date: 03/29/96 Last Update Date: 10/13/97 Last Major Revision Date: 07/21/97 54F219-X REV 2A0 64-BIT RANDOM ACCESS MEMORY WITH TRI-STATE OUTPUTS General Description The F219 is a high-speed 64-bit RAM organized as a 16-word by 4-bit array. Address inputs

hep 251

Abstract: 54F21 SD05 SNJ54F21J
Contextual Info: REVISIONS LTR DATE YR-MO-OA DESORPTION APPROVED * REV SHEET REV SHEET REVSWUS O f SHEETS REV SHEET 1 2 3 PMCWA PREPARED BY STANDARDIZED MILITARY DRAWING CHECnSBY 4 5 6 7 8 9 TO MFBI8C EUECTRONKS SUPPLYCENTER DAVTON,OMO 45444 //M l THIS DRAWMG IS AVAILABLE

Contextual Info: National Semiconductor 54F/74F219 64-Bit Random Access Memory with TRI-STATE Outputs General Description Features The 'F219 is a high-speed 64-bit RAM organized as a 16-word by 4-bit array. Address inputs are buffered to mini­ mize loading and are fully decoded on-chip. The outputs are

64 CERAMIC LEADLESS CHIP CARRIER LCC

Abstract: 54F219DL 54F219FL 54F219LL 74F219 74F219PC 74F219SC 74F219SJ F189 N16E
Contextual Info: 54F 74F219 64-Bit Random Access Memory with TRI-STATE Outputs General Description Features The ’F219 is a high-speed 64-bit RAM organized as a 16-word by 4-bit array Address inputs are buffered to minimize loading and are fully decoded on-chip The outputs are

74act3301

Abstract: scl4412 75307 equivalent CD4015 jm38510/05101 DISCO DFG840 JM38510/33903BEA 74lvc3245 JM38510/05101BCA JM38510/34001BCA
Contextual Info: N ENHANCED SOLUTIONS DESIGN/PROCESS CHANGE NOTIFICATION formerly Military & Aerospace Division PCN Nr: 1999 Listing GIDEP Nr: GIDEP Category: Issued: 01/05/99 TRB Nr: This is to advise you that a Design and/or Process Change will be made to the following High Reliability product(s):

Contextual Info: E M IC O N D U C T Q R r 74F219 64-Bit Random Access Memory with 3-STATE Outputs General Description Features The ’F219 is a high-speed 64-bit RAM organized as a 16-word by 4-bit array. Address inputs are buffered to mini­ mize loading and are fully decoded on-chip. The outputs are

FDC9268

Abstract: FSA2501M FSA2510 fsa2501 FSA2510M smd diode marking code TO3 FSA3130M TRANSISTOR SMD MARKING CODE QA lmc64841 CB0239W-MSP
Contextual Info: N MILITARY / AEROSPACE DESIGN/PROCESS CHANGE NOTIFICATION PCN Nr: 1996 Listing GIDEP Nr: Issued: 23.12.96 GIDEP Category: TRB Nr: This is to advise you that a Design and/or Process Change will be made to the following MIL/AERO product s : Product ID (Description):

Contextual Info: 54F 74F219 64-Bit Random Access Memory with TRI-STATE Outputs General Description Features The ’F219 is a high-speed 64-bit RAM organized as a 16-word by 4-bit array Address inputs are buffered to minimize loading and are fully decoded on-chip The outputs are

Contextual Info: 219 National Semiconductor 54F/74F219 64-Bit Random Access Memory with TRI-STATE* Outputs General Description Features The ’F219 is a high-speed 64-bit RAM organized as a 16-word by 4-bit array. Address inputs are buffered to mini­ mize loading and are fully decoded on-chip. The outputs are

Contextual Info: Nationa l Semiconductor MILITARY DATA SHEET Original Creation Date: 03/29/96 Last Update Date: 07/30/96 Last Major Revision Date: 03/29/96 54F219—X REV 1A0 64-BIT RANDOM ACCESS MEMORY WITH TRI-STATE OUTPUTS General Description The F219 is a high-speed 64-bit RAM organized as a 16-word by 4-bit array. Address inputs

Contextual Info: November 1994 Semiconductor 54F/74F219 64-Bit Random Access Memory with TRI-STATE Outputs General Description Features The ’F219 is a high-speed 64-bit RAM organized as a 16-word by 4-bit array. Address inputs are buffered to mini­ mize loading and are fully decoded on-chip. The outputs are

TSMC 0.18 um MOSfet

Abstract: M38510 10102BCA IDT7204L 5962-8768401MQA 0.18um LDMOS TSMC sl1053 TSMC 0.25Um LDMOS UT63M125BB SMD RTAX250S-CQ208 5962-04221
Contextual Info: DSCC Supplemental Information Sheet for Electronic QML-38535 Specification Details: Date: 9/2/2008 Specification: MIL-PRF-38535 Title: Advanced Microcircuits Federal Supply Class FSC : 5962 Conventional: No Specification contains quality assurance program: Yes

5962L0053605VYC

Abstract: 5962-9069204QXA ATMEL 302 24C16 UT9Q512E-20YCC MOH0268D UT54ACS164245SEIUCCR Z085810 5962-9762101Q2A UT28F256QLET-45UCC 5962R0250401KXA
Contextual Info: NOT MEASUREMENT SENSITIVE MIL-HDBK-103AJ 19 SEPTEMBER 2011 SUPERSEDING MIL-HDBK-103AH 28 MARCH 2011 DEPARTMENT OF DEFENSE HANDBOOK LIST OF STANDARD MICROCIRCUIT DRAWINGS This handbook is for guidance only. Do not cite this document as a requirement. AMSC N/A