54NS Search Results

G60N60

Abstract: G60N IF110 ISOPLUS247 C9045 IXGR60N60C2C1 g60n60c2
Contextual Info: Preliminary Technical Information HiperFASTTM IGBT w/ SiC Anti-Parallel Diode IXGR60N60C2C1 VCES IC110 VCE sat tfi(typ) = = ≤£ = 600V 39A 2.7V 54ns (Electrically Isolated Back Surface) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600

khx6400d2

Abstract: DDR2 go 800mhz DDR2 240 pin Mechanical Dimensions
Contextual Info: Memory Module Specifications KHX6400D2LLK2/2GN 2GB 1GB 128M x 64-Bit x 2 pcs. PC2-6400 CL4 240-Pin DIMM Kit SPECIFICATIONS Clock Cycle Time (tCK) CL=5 3ns (min.) / 8ns (max.) Row Cycle Time (tRC) 54ns (min.) Refresh to Active/Refresh Command Time (tRFC)

Contextual Info: Memory Module Specifications KHX6400D2LL/1G 1GB 128M x 64-Bit PC2-6400 CL4 240-Pin DIMM SPECIFICATIONS Clock Cycle Time tCK CL=5 3ns (min.) / 8ns (max.) Row Cycle Time (tRC) 54ns (min.) Refresh to Active/Refresh Command Time (tRFC) 105ns Row Active Time (tRAS)

Contextual Info: Preliminary Technical Information IXXH40N65B4H1 XPTTM 650V IGBT GenX4TM w/ Sonic Diode VCES = IC110 = VCE sat  tfi(typ) = Extreme Light Punch Through IGBT for 5-30 kHz Switching 650V 40A 1.80V 54ns TO-247 AD Symbol Test Conditions Maximum Ratings

G60N60

Abstract: 60N60C2 IF110 ISOPLUS247 g60n60c2c1 IXGR60N60C2C1 siemens sic g60n60c2
Contextual Info: IXGR60N60C2C1 HiperFASTTM IGBT w/ SiC Anti-Parallel Diode VCES IC110 VCE sat tfi(typ) = = ≤£ = 600V 39A 2.7V 54ns (Electrically Isolated Back Surface) ISOPLUS 247TM Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ

Contextual Info: Memory Module Specifications KHX6400D2/1G 1GB 128M x 64-Bit PC2-6400 CL5 240-Pin DIMM SPECIFICATIONS Clock Cycle Time tCK CL=5 3ns (min.) / 8ns (max.) Row Cycle Time (tRC) 54ns (min.) Refresh to Active/Refresh Command Time (tRFC) 105ns Row Active Time (tRAS)

Contextual Info: Advance Technical Information IXXH40N65B4 XPTTM 650V IGBT GenX4TM VCES IC110 VCE sat tfi(typ) Extreme Light Punch Through IGBT for 5-30 kHz Switching = = ≤ = 650V 40A 1.8V 54ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 175°C

Contextual Info: Memory Module Specifications KHX6400D2LL/2G 2GB 256M x 64-Bit PC2-6400 CL4 240-Pin DIMM SPECIFICATIONS Clock Cycle Time tCK CL=5 3ns (min.) / 8ns (max.) Row Cycle Time (tRC) 54ns (min.) Refresh to Active/Refresh Command Time (tRFC) 127.5ns Row Active Time (tRAS)

Contextual Info: HiperFASTTM IGBT w/ SiC Anti-Parallel Diode IXGR60N60C2C1 VCES IC110 VCE sat tfi(typ) = = ≤£ = 600V 39A 2.7V 54ns (Electrically Isolated Back Surface) ISOPLUS 247TM Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ

Contextual Info: Advance Technical Information IXXH40N65B4H1 XPTTM 650V IGBT GenX4TM w/ Sonic Diode VCES = IC110 = VCE sat  tfi(typ) = Extreme Light Punch Through IGBT for 5-30 kHz Switching 650V 40A 1.80V 54ns TO-247 AD Symbol Test Conditions Maximum Ratings

KHX6400D2

Abstract: DDR2 Mechanical Dimensions DDR2 240 pin Mechanical Dimensions
Contextual Info: Memory Module Specifications KHX6400D2LLK2/2G 2GB 1GB 128M x 64-Bit x 2 pcs. PC2-6400 CL4 240-Pin DIMM Kit SPECIFICATIONS Clock Cycle Time (tCK) CL=5 3ns (min.) / 8ns (max.) Row Cycle Time (tRC) Command Time (tRFC) 54ns (min.) Refresh to Active/Refresh 105ns

Contextual Info: 240PIN DDR2 667 Unbuffered DIMM 1GB With 64Mx8 CL5 TS128MLQ64V6J Description Placement The TS128MLQ64V6J is a 128M x 64bits DDR2-667 Unbuffered DIMM. The TS128MLQ64V6J consists of 16pcs 64Mx8bits DDR2 SDRAMs in 60 ball FBGA packages and a 2048 bits serial EEPROM on a 240-pin

CAMERA motion detection

Abstract: motion DETECTOR CIRCUIT DIAGRAM dpcm AF SO5 camera module af ECST dcp27 mark gb0 motion DETECTOR block DIAGRAM motion DETECTOR CIRCUIT
Contextual Info: DATA SHEET KS7333 PRODUCT INFORMATION PRODUCT SUMMARY KS7333 is a product used in video camera systems, such as camcorders and surveillance camera systems that use charge coupled devices CCD . It takes the CCD input as digital data and performs 3-D interpolation, image

80C32

Abstract: DS2502-E48 DS80C400 DS80C400-FNY J-STD-020A
Contextual Info: DS80C400 Network Microcontroller www.maxim-ic.com GENERAL DESCRIPTION FEATURES The DS80C400 network microcontroller offers the highest integration available in an 8051 device. Peripherals include a 10/100 Ethernet MAC, three serial ports, a CAN 2.0B controller, 1-Wire Master, and 64 I/O pins.

AN557

Abstract: ISL54050 ISL54050IRUZ-T NLAS5223 NLAS5223L TB347 TB363 pin compatible replacement for the
Contextual Info: ISL54050 Data Sheet November 22, 2008 Ultra Low ON-Resistance, +1.65V to +4.5V, Single Supply, Dual SPDT Analog Switch The Intersil ISL54050 device is a low ON-resistance, low voltage, bidirectional, dual single-pole/double-throw SPDT analog switch designed to operate from a single +1.65V to

8251 uart

Abstract: SERIAL CONTROLLER 8251 VNS80000 vlsi vlsi cmos circuitry VNS8000 UART 8251 VLSI Solution implement codec G.711 8251 programmable communication interface
Contextual Info: Networking Communications VIP Single-Chip VLSI ISDN Subscriber Processor OVERVIEW F E AT U R E S The VLSI ISDN Subscriber Processor VIP offers in a single device a powerful programmable engine for ISDN subscriber communications. It includes most of the circuitry

2808 eeprom

Contextual Info: 128M x 72 Bit SDRAM DIMM PC100/133 SYNCHRONOUS DRAM DIMM 72A0TsSEM8G19TWN 168 Pin 128Mx72 SDRAM DIMM Unbuffered, 8k Refresh, 3.3V with SPD General Description Pin Assignment The Module is a 128Mx72 bit, 19 chip, 168 Pin DIMM module consisting of 18 16Mx8x4 (TSOP)

DS1082-72A0R

Abstract: 1gb pc133 SDRAM DIMM pc100 power supply unit circuit diagram
Contextual Info: 128M x 72 Bit Registered PC100/133 SDRAM DIMM Registered PC100/133 SYNCHRONOUS DRAM DIMM 72A0RxSTM8G24TWR 168 Pin 128Mx72 SDRAM DIMM Registered, 8k Refresh, 3.3V with SPD Pin Assignment Pin# General Description The module is a 128Mx72 bit, 24 chip, 168 Pin

2808 eeprom

Contextual Info: 128M x 72 Bit Registered PC100/133 SDRAM DIMM Registered PC100/133 SYNCHRONOUS DRAM DIMM 72A0TxSTM8G13KWI 168 Pin 128Mx72 SDRAM DIMM Registered, 8k Refresh, 3.3V with SPD Pin Assignment Pin# General Description The module is a 128Mx72 bit, 13 chip, 168 Pin

ProMOS ddr2

Abstract: 2rx16 DDR2-400 DDR2-533 DDR2-667 PC2-3200 PC2-5300 V91676
Contextual Info: V916764B24QA 64M x 64 HIGH PERFORMANCE UNBUFFERED DDR2 SDRAM SODIMM Features Description • The V916764B24QA memory module is organized as 67,108,864 x 64 bits in a 200 pin memory module. The 64M x 64 memory module uses 8 ProMOS 32M x 16 DDR2 SDRAMs. The x64 modules

V916765K24QA

Contextual Info: V916765K24QA 128M x 64 HIGH PERFORMANCE UNBUFFERED DDR2 SDRAM MODULE Features Description • 240-pin, unbuffered dual in-line memory module • JEDEC standard 1.8V + 0.1V power supply • VDDQ=1.8V + 0.1V • Fast data transfer rate: PC2-3200, PC2-4200, or

Contextual Info: V917565K24QA 128M x 72 HIGH PERFORMANCE UNBUFFERED DDR2 ECC SDRAM MODULE Features Description • 240-pin, unbuffered dual in-line memory module • JEDEC standard 1.8V + 0.1V power supply • VDDQ=1.8V + 0.1V • Fast data transfer rate: PC2-3200, PC2-4200, or

Contextual Info: V917564U24QA 512M x 72 HIGH PERFORMANCE REGISTERED DDR2 ECC SDRAM MODULE Features Description • 240-pin, registered dual in-line memory module • JEDEC standard 1.8V + 0.1V power supply • VDDQ=1.8V + 0.1V • Fast data transfer rate: PC2-3200, PC2-4200, or

Contextual Info: V916632B24QA 32M x 64 HIGH PERFORMANCE UNBUFFERED DDR2 SDRAM SODIMM Features Description • The V916632B24QA memory module is organized as 33,554,432 x 64 bits in a 200 pin memory module. The 32M x 64 memory module uses 8 ProMOS 16M x 16 DDR2 SDRAMs. The x64 modules