550 0065 Search Results

C180

Abstract: c180 scr RCA SCR C380 C380A C380B C380C C380D C380E C390
Contextual Info: PHASE CONTROL SCR's 110 235 TO 850 AMPERES | GETYPE C180 C380 C390 C391 C 501 C502 1 500-1300 100-1300 500-1 TDM *,wv 1300-1800 700 1700 1500-2000 1 735 850 550 @ 6 5 JC 500 @ 65°C 850 550 @65°C 550 @ 57°C 850 135 @ 80°C 380 235 /• 80°C 180 @ 80°C

alcoa electrical joint compound

Abstract: c180 scr C180PC C501 C180 C380 C380A C380B alcoa electrical joint compound #2 C380D
Contextual Info: PHASE CONTROL SCR's 110 235 TO 850 AMPERES | GETYPE C180 C380 C390 C391 C 501 C502 1 500-1300 100-1300 500-1 TDM *,wv 1300-1800 700 1700 1500-2000 1 735 850 550 @ 6 5 JC 500 @ 65°C 850 550 @65°C 550 @ 57°C 850 135 @ 80°C 380 235 /• 80°C 180 @ 80°C

MS35338

Abstract: MS35333 MS35338-134 MS35338-141 MS35338-139 ms51848 FED-STD-66 MS35335 MS35338-136 MS35338-138
Contextual Info: FSC 5310 ITEM NAME: Washer, Lock, Flat-Internal Tooth ITEM NAME CODE: INC 14218 SPECIFICATIONS: MS35333 MATERIAL: Cadmium QQ-P-416 Type II, Class 2 NIIN 00-579-5554 00-193-7577 00-579-0079 00-559-0070 00-576-5752 00-550-1130 00-167-0721 00-595-7237 00-685-3228

C501

Abstract: C501N C501P C501PA C501PB C501PC C501PD C501PE C501S C501T
Contextual Info: SCR C501 550 A Avg. up to 1800 V AM PLIFYING GATE The C501 Series o f high power devices feature the proven, multi-diffused construction in a new, larger, pressure-mounted package. FEATURES: • • • • • • • Short Delay Time Pressure Contacts Glazed Ceramic Package w ith 1" Creepage Path

BFW 10 fet

Abstract: transistor bf 494 bf 494 transistor BFW 10 A FET transistor bf 184 transistor BF 253 transistor bf 241 BF 184 transistor transistor bf 495 transistor bf 254
Contextual Info: 6091788 MICRO ELECTRONICS CORP_ 820 00652 D J 3 /~>7 MICRO ELECTRONICS CORP 02 DE | bCH17fl0 DDDDbSS 1 V C E SA T CASE Pd (mVY) *C Im A) V 'c CEO (V) min max Im A l V CE (V) 167 — — — — 1 3 3 2.5 4 max 'c fT min Cob Cre* max N.F. (MHz)

Contextual Info: I Types CGS, CG, CGR, CGO, CGH M allorY Dimensions and Size Charts Case Code Chart Uninsulated Can_ C ase Code R2C R2L R3C R3L R4C R4L R5C R5L U2C U2L U3C U3L U4C U4L U5C U5L V2C V2L V3C V3L V4C V4L V5C V5L W3C W3L W4C W4L W5C W5L X3L X4C X4L X5C X5L

Mallory vr3

Abstract: CG027 MALLORY CAPACITORS
Contextual Info: Types CGS, CG, CGR, CGO, CGH • MallorY Dimensions and Size Charts Case Code Chart Uninsulated Can_ _Inches . — A O O ro a « o E 3 R2C R2L R3C R3L R4C R4L R5C R5L U2C U2L U3C U3L U4C U4L U5C U5L V2C V2L V3C V3L V4C V4L V5C V5L W3C W3L W4C W4L

motorola application note AN-569

Abstract: Motorola Transistor 3-252 Motorola 3-252
Contextual Info: motorola sc -c x s t r s / r f Tö > 6 3 6 7 2 5 4 MOTOROLA SC D E | t,3 1=,7 S SM X STR S/R F OGflBBfiti 98D 8 3 3 8 6 fl D T ' 3 MOTOROLA SEMICONDUCTOR TECHNICAL DATA MTH6N55 MTH6N60 MTM6N60 Designer's Data Sheet Pow er Field Effect Transistor N-Channel Enhancement-Mode

Silicon Photocells

Abstract: MS1B
Contextual Info: 3E PLESSEY SEMICOND/DISCRETE 7220533 PLESSEY DE^.72BDS33 QOQlflflE SEMICOND/ D I S C R E T E man A -R .m f 32C 01882 MS SERIES T-41 -49 SILICON M ESA PHOTOCELLS A range of silicon photovoltaic cells of mesa construction available in sizes from micro-miniature to

MTA2N60E

Abstract: Motorola Transistor 3-252 MTM6N60 63386 MTH6N55 AN569 MTH6N60 Motorola Case 1-06 Motorola 3-252
Contextual Info: motorola sc -c x s t r s / r f > •=10 D E | b3b72S4 0DÛ33ÛL, fl | 6 3 6 7 2 5 4 MOTOROLA SC X S T R S /R F 98D 6 3 3 8 6 T '3 MOTOROLA D q-13 SEMICONDUCTOR TECHNICAL DATA M TH6N55 M TH6N60 M TM 6N 60 Designer's Data Sheet Pow e r Field Effect T ran sisto r

Contextual Info: - 'jn n n n - {P8> -«rrrr^-jsrrrr^-4 rrrn - ÌP2 - -4 rrm - /•■V. -«rrrr^- /•\_ -« n rrr^ - -mrrrr^ - ELECTRICAL SPECIFICATIONS: 1,0 INDUCTANCE P l - J l) I (P 3 -J3 ) I ( P 4 -J4 ) I (P 7 -J7 ) I 65 uH TYP 6,01V, lOKHz 2.0 DC RESISTANCE P 8 -J8

Contextual Info: £§> © ÎP 5 -vauuuu•aïJUUUO- P2) -'SJUUUU-vSUUUU- NDTESI PINS NDT ELECTRICALLY CONNECTED ARE DMITTED. ELECTRICAL SPECIFICATIONS! 1.0 INDUCTANCE' P 1 -J1 = P 2-J2 ) P 4 -J 4 = P 5 -J 5 I 65 uH 0.01V, 10 KHz, nominal. 2.0 DC RESISTANCE' P l- J l

Contextual Info: 10OOpF, 2KV NOTES: 1.0 P IN S WITHOUT ELECTRICAL CONNECTION ARE OMITTED. ELECTRICAL SPECIFICATIONS: 1.0 TURNS RATIO: P 6 - P 5 - P 4 : (J6-J3 ) ( P 3 - P 2 - P 1 ) : (J2-J1 ) 1CT : 1± 3% 1.41CT : 1 ± 3% 2.0 INDUCTANCE: 350uH MIN. @ 0.1V, 100KHz, 8mA DC Bias

Contextual Info: lOOOpFj 2 K V ELECTRICAL SPECIFICATIONS: NDTES 1.0 TURNS RATIO: P 6 - P 5 - P 4 (P 3 - P 2 - P 1 ) : (J 6 - J 3 ) : (J 2 - J 1 ) 2.0 INDUCTANCE: 3.0 LEAKAGE INDUCTANCE: 4.0 INTERWINDING CAPACITANCE: 5.0 DC RESISTANCE: (J 6 - J 3 ) = (J2- J1 ) (P 6 - P 4

Silicon Photocells

Abstract: MS4A FERRANTI ELECTRONICS MS10 MS11BE MS11A MS11AE MS11B ferranti MS6B
Contextual Info: INSTRUMENT PHOTO-CELLS S T A N D A R D R A N G E S IL IC O N M E S A P H O T O -C E L L S Ferranti's extensive production facility, established over the past eighteen years, for the manufacture of Silicon photo-cells has generated a complete range of devices from micro-miniature to large area

MTH8N55

Abstract: DIODE MOTOROLA B33 MTM8N60 3fc relay 000073S AN569 MTH8N60 U055 TO 521 MH
Contextual Info: MOTOROLA SC IME D I XSTRS/R F b3 b?a SM O Oâ ^a bT 3 I S f -1 5 MOTOROLA • SEMICONDUCTOR TECHNICAL DATA M T H 8N 55 MTH8ÏM60 M TM 8N60 Designer's Data Sheet Power Field Effect Transistor N-Channel Enhancem ent-M ode S ilic o n G ate T M O S T h e s e T M O S P o w e r FETs are d e s ig n e d fo r h ig h v o lta g e , high

Contextual Info: HIGH VOLTAGE RADIAL LEADED CAPACITORS X7R AND NPO DIELECTRIC EPOXY COATED AND UNCOATED RADIAL LEADED CAPACITORS SPECIFICATIONS: OPERATING TEMPERATURE RANGE – 55°C to +125°C High temperature to 250°C available TEMPERATURE COEFFICIENT X7R: NPO: ± 15% ∆C

ks0104

Abstract: KS0105 KS0106 KS0068 KS0063 0065B
Contextual Info: TABLE OF CONTENTS I. PRODUCT GUIDE 1. Function G uid 2. Ordering Inform ation. 17

CLR35

Contextual Info: WET AND FOIL TANTALUM CAPACITORS MIL-C-39006 Established Reliability Tantalum Capacitors to Military Specification MIL-C-39006 T N ACCORDANCE with military specification MIL-C-39006, capacitors are marked with the MIL part number M 39006/XX-XXXX rather than

74LS

Abstract: CD4047B CD4047BC CD4047BM 71XS NATIONAL SEMICONDUCTor CD4047BCN
Contextual Info: N a t i o n a l October 1993 S e m i c o n d u c t o r CD4047BM/CD4047BC Low Power Monostable/Astable Multivibrator General Description CD4047B is capable of operating in either the monostabla or astable mode. It requires an external capacitor between pins 1 and 3 and an external resistor (between pins 2 and

NL3224BC35-22

Abstract: qvga Hsync Vsync generator transistor 2N 238 55LHS11 ELECTRONIC BALLAST DIAGRAM lcd tv DOD-PP-0301 ELCO connector 55LHS-11 5 x 7 dot matrix display common cathode
Contextual Info: TFT COLOR LCD MODULE NL3224BC35-22 14cm 5.5 Type QVGA DATA SHEET DOD-PP-0301 (6th edition) This DATA SHEET is updated document from DOD-PP-0065(5). All information is subject to change without notice. Please confirm the sales representative before starting to design your system.

Contextual Info: POWER INDUCTORS - SURFACE MOUNT SMP3316LPLF PART NUMBER SMP3316LP-101MLF SMP3316LP-151MLF SMP3316LP-221MLF SMP3316LP-331MLF SMP3316LP-471MLF SMP3316LP-681MLF SMP3316LP-102MLF SMP3316LP-152MLF SMP3316LP-222MLF SMP3316LP-332MLF SMP3316LP-472MLF SMP3316LP-682MLF

SMP3316-103M

Abstract: SMP3316 SMP3316-333M SMP3316-101M SMP3316-102M SMP3316-151M SMP3316-152M SMP3316-221M SMP3316-222M SMP3316-331M
Contextual Info: POWER INDUCTORS - SURFACE MOUNT POWER INDUCTORS - SURFACE MOUNT SMP3316 PART NUMBER SMP3316-101M SMP3316-151M SMP3316-221M SMP3316-331M SMP3316-471M SMP3316-681M SMP3316-102M SMP3316-152M SMP3316-222M SMP3316-332M SMP3316-472M SMP3316-682M SMP3316-103M SMP3316-153M

SMP3316LP

Abstract: SMP3316LP-681M SMP3
Contextual Info: POWER INDUCTORS - SURFACE MOUNT SMP3316LP PART NUMBER SMP3316LP-101M SMP3316LP-151M SMP3316LP-221M SMP3316LP-331M SMP3316LP-471M SMP3316LP-681M SMP3316LP-102M SMP3316LP-152M SMP3316LP-222M SMP3316LP-332M SMP3316LP-472M SMP3316LP-682M SMP3316LP-103M SMP3316LP-153M