550 SOT143 Search Results

HSCH-9551

Contextual Info: Schottky Diode Selection Guides SOT-23/-323 Schottky-Barrier Diodes Part VBR V Number (min) HBAT-540X HSMS-270X 30 15 VF (mV) (max) CT (pF) (max) RS (Ω) (typ) τ (ps) (typ) 800 550 3.0 6.7 2.4 0.65 100 100 In a SOT-23 package, the “X” in the above part numbers is replaced by “0” for a single diode configuration, and a “2” for

HW-101A

Abstract: hw101a hw101
Contextual Info: InSb Hall Element HW-101A •High-sensitivity InSb Hall element. •Mini-mold SMT package fits SOT143 land pattern . •Shipped in packet-tape reel (3000pcs per reel). •Absolute Maximum Ratings Item Symbol Limit Unit Max. Input Current Ic 20 mA Operating Temp. Range

smd transistor 982 sot143

Contextual Info: Not for new design, this product will be obsoleted soon S593T/S593TR/S593TRW Vishay Semiconductors MOSMIC for TV-Tuner Prestage with 5 V Supply Voltage 2 1 Comments MOSMIC - MOS Monolithic Integrated Circuit Features • • • • • • • • • SOT143

smd transistor marking 59R

Abstract: sot-343
Contextual Info: Not for new design, this product will be obsoleted soon S595T / S595TR / S595TRW Vishay Semiconductors MOSMIC for TV-Tuner Prestage with 5 V Supply Voltage 2 1 Comments MOSMIC - MOS Monolithic Integrated Circuit SOT143 3 Features • • • • • •

SOT-143 MARKING 550

Abstract: S852T S868 T0-50 TEMIC S868T BFP183T
Contextual Info: Temic Semiconductors TOSO 4 Marking T050 (3) Part Number SOT23 Ibias(niA) Vd(V) SOT143 Gp(dB) (50 Q) BiPMICs (Bipolar Monolithic Integrated Circuit) S858TA1 S858TA3 S868T S860T S872T Marking Part Number 858 TA3 868 860 * VcEO V 30 30 45 3 85 5 3.6 5 1.8

marking 550 sot143

Abstract: S594TR
Contextual Info: Not for new design, this product will be obsoleted soon S594T / S594TR / S594TRW Vishay Semiconductors MOSMIC for TV-Tuner Prestage with 5 V Supply Voltage 2 1 Comments MOSMIC - MOS Monolithic Integrated Circuit SOT143 Features • • • • • • •

Contextual Info: ChenYang Technologies GmbH & Co. KG CYTY SERIES InSb HALL-EFFECT ELEMENTS CYTY series Hall-effect elements are made of compound semiconductor material indium stibnite (InSb), which utilizes the Hall Effect principle. It can convert a magnetic flux density signal linearly into

Contextual Info: ChenYang Technologies GmbH & Co. KG CYTY SERIES InSb HALL-EFFECT ELEMENTS CYTY series Hall-effect elements are made of compound semiconductor material indium stibnite (InSb), which utilizes the Hall Effect principle. It can convert a magnetic flux density signal linearly into

Contextual Info: ChenYang Technologies GmbH & Co. KG CYTY SERIES InSb HALL-EFFECT ELEMENTS CYTY series Hall-effect elements are made of compound semiconductor material indium stibnite (InSb), which utilizes the Hall Effect principle. It can convert a magnetic flux density signal linearly into

BFG591 amplifier

Abstract: BFM520 BFM505 BFC505 BFC520 BFE505 sot172 Philips Semiconductors Selection Guide bf763 S0T343
Contextual Info: Philips Semiconductors RF Wideband Transistors Selection guide FIRST GENERATION NPN WIDEBAND TRANSISTORS fT up to 3.5 GHz PACKAGE fT / l c CURVE (see Fig.1 ) LEADED SOT54 SURFACE-MOUNT SOT23 SOT89 SOT143 SOT223 SOT323 (1) BFT25 (2) BF747 BF547 BF547W BFS17

AIC2857

Abstract: AIC2858 AIC2562 AIC2341
Contextual Info: Quick Reference - Power Conversion Linear Voltage Regulator/Voltage Reference INDEX Smart Low Dropout Ultra Low Dropout AIC1531 AIC1532 AIC1729 Quick Reference Quick Reference - Power Conversion P.1 .

CYTY211

Contextual Info: ChenYang Technologies GmbH & Co. KG CYTY SERIES InSb HALL-EFFECT ELEMENTS CYTY series Hall-effect elements are made of compound semiconductor material indium stibnite (InSb), which utilizes the Hall Effect principle. It can convert a magnetic flux density signal linearly into

HW-101A

Abstract: hall ic 550
Contextual Info: InSb Hall Element HW-101A Please be aware that AKE products are not intended for use in life support equipment, devices, or systems. Use of AKE products in such applications requires the advance written approval of the appropriate AKE officer. Certain applications using semiconductor devices may involve potential

w13 smd transistor

Contextual Info: S913T / S913TR / S913TRW Vishay Semiconductors MOSMIC for TV-Tuner Prestage with 9 V Supply Voltage 2 1 Comment SOT-143 MOSMIC - MOS Monolithic Integrated Circuit 3 Features • • • • • • • • • Integrated gate protection diodes Low noise figure

smd transistor marking 59R

Contextual Info: S595T / S595TR / S595TRW Vishay Semiconductors MOSMIC for TV-Tuner Prestage with 5 V Supply Voltage 2 1 Comments SOT-143 MOSMIC - MOS Monolithic Integrated Circuit 3 Features • • • • • • • • • Integrated gate protection diodes Low noise figure

smd transistor 982 sot143

Contextual Info: S593T/S593TR/S593TRW VISHAY Vishay Semiconductors MOSMIC for TV-Tuner Prestage with 5 V Supply Voltage 2 1 Comments SOT-143 MOSMIC - MOS Monolithic Integrated Circuit 3 Features • • • • • • • SOT-143R 4 3 1 4 Low noise gain controlled input stages in UHF-and

smd transistor marking 59R

Abstract: w59 marking 945 mosmic
Contextual Info: S595T / S595TR / S595TRW VISHAY Vishay Semiconductors MOSMIC for TV-Tuner Prestage with 5 V Supply Voltage 2 1 Comments SOT-143 MOSMIC - MOS Monolithic Integrated Circuit 3 Features • • • • • • • SOT-143R 4 3 1 4 Low noise gain controlled input stages in UHF-and

w13 smd transistor

Abstract: marking 557 SOT143 smd transistor marking j5 557 sot-143 MARKING transistor rf cm 1104 SOT-143 MARKING 557 w13 smd tuner marking w13
Contextual Info: S913T / S913TR / S913TRW VISHAY Vishay Semiconductors MOSMIC for TV-Tuner Prestage with 9 V Supply Voltage 2 1 Comment SOT-143 MOSMIC - MOS Monolithic Integrated Circuit 3 Features • • • • • • • Integrated gate protection diodes Low noise figure

sc74750

Abstract: MSE-200 PESD5VOL4UW KMZ52 kmz51 smd transistor BC557 PBLS1504V 2n5551 smd PMBS3904, PMSS3904 sc7921
Contextual Info: Discretes For Bipolar Transistors and Discrete MOSFETs please check the Power Management Chapter, pages 189-239. For RF Consumer Products please find following tables in the RF Products Chapter from page 252 onwards: RF PIN diodes RF Bandswitch diodes RF Varicap diodes

SOT-143 MARKING 550

Abstract: S595T S595TR S595TRW smd transistor marking 59R
Contextual Info: S595T / S595TR / S595TRW Vishay Semiconductors MOSMIC for TV-Tuner Prestage with 5 V Supply Voltage 2 1 Comments SOT-143 MOSMIC - MOS Monolithic Integrated Circuit 3 Features • • • • • • • • • Integrated gate protection diodes Low noise figure

w13 smd transistor

Abstract: SOT-143 MARKING 557 S913T S913TR S913TRW TRANSISTOR SMD 613 w13 smd tuner
Contextual Info: S913T / S913TR / S913TRW Vishay Semiconductors MOSMIC for TV-Tuner Prestage with 9 V Supply Voltage 2 1 Comment SOT-143 MOSMIC - MOS Monolithic Integrated Circuit 3 Features • • • • • • • • • Integrated gate protection diodes Low noise figure

smd transistor 982 sot143

Abstract: S593T S593TR S593TRW
Contextual Info: S593T/S593TR/S593TRW Vishay Semiconductors MOSMIC for TV-Tuner Prestage with 5 V Supply Voltage 2 1 Comments SOT-143 MOSMIC - MOS Monolithic Integrated Circuit 3 Features • • • • • • • • • Integrated gate protection diodes Low noise figure

1PS74SB43

Abstract: sod87 Melf 1PS75SB45 1PS59SB20 1PS76SB21 1PS59SB10 1PS76SB17 1PS59SB21 1PS79SB62 BAS70
Contextual Info: Semiconductors Date of release: February 2005 Schottky barrier diodes portfolio General purpose Schottky barrier diodes 100 25 SOD80C SOD68 SOT346 MiniMelf (DO-34) (SC-59) SOT23 Surface Leaded glass Plastic SMD Plastic SMD Plastic SMD Plastic flat lead 260

SOT230

Abstract: SP SOT23 sod323 sot23 SOD323 DUAL DIODE 3800mV CT 10 SOD323 3500mV SOT-23 smsd6004
Contextual Info: SURFACE MOUNT SOT23 AND SOD323 SCHOTTKY MIXERS AND DETECTOR DIODES FEATURES Surface Mount Package Tape and Reel Available Reliability Gold Metallized Chip Silicon Nitride/Oxide Passivation Low Series Resistance Low Capacitance Wide Dynamic Range Specials are available upon request.