SOT172 Search Results

Contextual Info: Package outline Studless ceramic package; 4 leads SOT172D D A Q c D1 H b 4 b1 H 1 3 2 5 10 mm scale DIMENSIONS millimetre dimensions are derived from the original inch dimensions UNIT A b b1 c D D1 H Q mm 3.71 2.89 3.31 3.04 0.89 0.63 0.16 0.10 5.20 4.95

Philips fr 153 30

Abstract: BFQ135
Contextual Info: Philips Components BFQ135 NPN 1 GHz WIDEBAND TRANSISTOR NPN transistor in a ceramic SOT172A2 package. It is prim arily intended for use in M ATV and microwave amplifiers, such as in aerial amplifiers, radar systems, oscilloscopes, spectrum analysers etc. Emitter ballasting resistors and application of gold sandwich metallization ensure an optimum

Contextual Info: Philips Semiconductors bbS3T31 DD32EQ5 TMfi HIAPX Product specification NPN 4 GHz wideband transistor crystal X3A-BFQ34 N AUER PHILIPS/MSCRETE DESCRIPTION b^E ]> MECHANICAL DATA NPN crystal used in BFQ34T SOT37 , BFQ34 (SOT172) and BFG35 (SOT223). Crystals are supplied as whole

RF Wideband Transistors

Contextual Info: PACKAGE OUTLINES Package SOT23 SOT54 SOT54variant SOT89 SOT122A SOT143B SOT143R SOT172A1 SOT172A2 SOT223 SOT323 SOT343N SOT343R SOT353 SOT363 Surface-mount yes no no yes no yes yes no no yes yes yes yes yes yes Page . . . . . . . .

Contextual Info: Philips Semiconductors Product specification NPN 1 GHz video transistor crystal PHILIPS INTERNATIONAL X3A-BFQ268 7110fl2b OGMbldl 7fl3 • P H I N SbE D DESCRIPTION MECHANICAL DATA NPN crystal used in BFQ262 A (SOT32), BFQ265(A) (SOT128) and BFQ268 (SOT172). Crystals are supplied

sot172a2

Contextual Info: PDF: 1999 Apr 16 Philips Semiconductors Package outline Studded ceramic package; 4 leads SOT172A2 D A Q A D1 c M N W w1 M A M D2 N3 M1 X H detail X b 4 b1 H 1 3 2 5 10 mm scale DIMENSIONS millimetre dimensions are derived from the original inch dimensions

T343

Contextual Info: Concise Catalogue 1996 Philips Semiconductors RF & MICROWAVE SEMICONDUCTORS & MODULES DISCRETE SEMICONDUCTORS Wideband transistors THIR D-G ENER ATIO N NPN W IDEBAND TRANSISTO RS fT up to 8 GHz f-p/lg curve s ee chart package ceram ic SOT172 SOT143 SOT173

Contextual Info: Package outline Studded ceramic package; 4 leads SOT172A1 D A Q A D1 c M N W w1 M A M D2 N3 M1 X detail X H b 4 b1 H 1 3 2 5 10 mm scale DIMENSIONS millimetre dimensions are derived from the original inch dimensions UNIT A b b1 c D D1 D2 H M M1 N N3 Q mm

Contextual Info: PDF: 1999 Apr 16 Philips Semiconductors Package outline Studded ceramic package; 4 leads SOT172A1 D A Q A D1 c M N W w1 M A M D2 N3 M1 X detail X H b 4 b1 H 1 3 2 5 10 mm scale DIMENSIONS millimetre dimensions are derived from the original inch dimensions

Contextual Info: Package outline Studded ceramic package; 4 leads SOT172A2 D A Q A D1 c M N W w1 M A M D2 N3 M1 X H detail X b 4 b1 H 1 3 2 5 10 mm scale DIMENSIONS millimetre dimensions are derived from the original inch dimensions UNIT A b b1 c D D1 D2 H M M1 N N3 Q mm

BFQ254

Abstract: BFQ234 UBB692 sot172a3
Contextual Info: Product specification Philips Semiconductors r- 7 ^ 3 S " / 7 BFQ254; BFQ254/I PNP 1 GHz video transistor PHILIPS 7110fi2ti D045b3D ITI B I P H I N SbE » INTERNATIONAL PINNING DESCRIPTION PNP silicon epitaxial transistor in SOT172A1 and SOT172A3 envelopes,

Contextual Info: P h ilip ^ e m ic o n d u c to r^ ^ ^ • b b 5 3 T 31 Q0 3 1 b b 5 1ST H i APX Product specification NPN 6.5 GHz wideband transistor ^ — DESCRIPTION BFQ135 N AMER PHILIPS/DISCRETE bTE D PINNING NPN transistor in a 4-lead dual-emitter SOT172A1 envelope with a ceramic cap. All leads are

sot172d

Contextual Info: PDF: 1999 Apr 16 Philips Semiconductors Package outline Studless ceramic package; 4 leads SOT172D D A Q c D1 H b 4 b1 H 1 3 2 5 10 mm scale DIMENSIONS millimetre dimensions are derived from the original inch dimensions UNIT A b b1 c D D1 H Q mm 3.71 2.89

BFQ262

Abstract: BFQ265 BFQ268 X3A-BFQ268 SOT128 SOT172 crystal PHILIPS
Contextual Info: Philips Semiconductors Product specification NPN 1 GHz video transistor crystal PHILIPS INTERNATIONAL X3A-BFQ268 7110021, OQMblDl 7fl3 SbE D DESCRIPTION IPHIN MECHANICAL DATA NPN crystal used in BFQ262 A (SOT32), BFQ265(A) (SOT128) and BFQ268 (SOT172). Crystals are supplied

Contextual Info: bbS 3T31 Philips Semiconductors 0032211 2H1 ^ l A P X Product specification NPN 1 GHz video transistor crystal — N X3A-BFQ268 AMER PHILIPS/DISCRETE DESCRIPTION fc^E 1 MECHANICAL DATA NPN crystal used in BFQ262 A (SOT32), BFQ265(A) (SOT128) and BFQ268 (SOT172). Crystals are supplied

BFQ34

Abstract: BFQ34T BFG35 X3A-BFQ34
Contextual Info: Phïlip^Semîconductors _ bbSBTBl □□32SQ5 M AP X T M fl Product specification NPN 4 GHz wideband transistor crystal X3A-BFQ34 N AMER PHILIPS/DISCRETE DESCRIPTION b^E D M E C H A N IC A L DATA NPN crystal used in BFQ34T SOT37 , BFQ34 (SOT172) and BFG35 (SOT223). Crystals are supplied as whole

BFE505

Abstract: BFRS20 SOT-343
Contextual Info: Philips Semiconductors Concise Catalogue 1996 DISCRETE SEMICONDUCTORS Wideband transistors RF & MICROWAVE SEMICONDUCTORS & MODULES FOURTH-GENERATION NPN WIDEBAND TRANSISTORS fT up to 10 GHz package V 'c curve ceramic see -chart SOT172 SOT23 (18)

Contextual Info: SOT172D CRDB4; blister pack; standard product orientation 12NC ending 112 Rev. 1 — 18 October 2012 Packing information 1. Packing method Blister cover ESD Label Foam Blister bottom ESD Label Printed plano box Space for additional label Preprinted ESD warning

BFQ34

Abstract: crystal PHILIPS BFQ34T SOT172 BFG35 X3A-BFQ34
Contextual Info: Philips Semiconductors Product specification NPN 4 GHz wideband transistor crystal PHILIPS INTERNATIONAL • DESCRIPTION X3A-BFQ34 OOHbCnS tST « P H I N 711002b MECHANICAL DATA NPN crystal used in BFQ34T SOT37 , BFQ34 (SOT172) and BFG35 (SOT223). Crystals are supplied as whole

RF Wideband Transistors

Abstract: MS-012AA
Contextual Info: PACKAGE OUTLINES Package SOT23 SOT54 SOT89 SOT96-1 SOT122A SOT122D SOT122E SOT143B SOT143R SOT172A1 SOT172A2 SOT223 SOT323 SOT343N SOT343R SOT353 SOT363 SOT551A Surface-mount yes no yes yes no no no yes yes no no yes yes yes yes yes yes yes Page . .

motorola transistor 5331

Abstract: BFQ254 BFQ234
Contextual Info: Philips Semiconductors bb53^31 Q031741 bTb HAPX PNP 1 GHz video transistor Product specification BFQ254; BFQ254/1 N AUER PHILIPS/DISCRETE DESCRIPTION b=JE D PINNING PNP silicon epitaxial transistor in SOT172A1 and SOT172A3 envelopes, with emitter-ballasting resistors and

TRANSISTOR D 2627

Abstract: D 4206 TRANSISTOR BFQ135 transistor 224-1 base collector emitter DIN45004B bfq135 scattering 1817 transistor 1348 transistor TRANSISTOR C 2570 c 2570 transistor
Contextual Info: P hilip^Sem iconductor^^^^ I I bbS 3 cJ3 1 0 0 3 1 Li Li 5 1 5 'J H i APX Product specification NPN 6.5 GHz wideband transistor BFQ135 N DESCRIPTION AMER P H IL IP S /D IS C R E T E bTE PINNING NPN transistor in a 4-lead dual-emitter SOT172A1 envelope with a ceramic cap. All leads are

BFQ268

Contextual Info: Philips Semiconductors_ ,—. 7^ 3 3 - 0 5 - NPN 1 GHz video transistor PH ILIPS INTERNATIONAL DESCRIPTION Product specification - BFQ268; BFQ268/1 5bE D • 7 1 1 D flP b OOMShS? 344 « P H I N PINNING NPN silicon epitaxial transistor with

B303D

Abstract: TT 2222 npn transistor tt 2222 transistor npn 2xi transistor sot t06 FTC 960 trimmer PT 10 TT 2222 ka band transistor
Contextual Info: b5E » H 71106Eb D0b3DEÛ 07T « P H I N BLV91/SL PHILIPS INTERNATIONAL UHF POWER TRANSISTOR NPN silicon planar epitaxial transistor designed fo r use in mobile radio transm itters in the 900 MHz band. Features: • diffused emitter-ballasting resistors fo r an optim um temperature profile.