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    Contextual Info: A D V A NC E D POWER TECHNOLOGY 4*JE D • □ 5 S 7 S G ci A 0000305 d v a TST n c HAVP e d POWER ; T-3P \ - \ 5 Te c h n o lo g y APT601R3BN 551R3BN APT601R6BN APT551R6BN „ POWER MOS IV™ 600V 550V 600V 550V 7.5A 7.5A 6.5A 6.5A 1.30 £2 1.30 £2


    OCR Scan     		APT601R3BN APT551R3BN APT601R6BN APT551R6BN 551R3BN 601R3BN 551R6BN 601R6BN O-247AD PDF

    3471A

    Abstract: 601R6BN APT551R
    Contextual Info: A dvanced P o w er TECHNOLOGY O D Ô S POWER MOS IV APT601R3BN 551R3BN APT601R6BN APT551R6BN 600V 550V 600V 550V 7.5A 1.3012 7.5A 1.30Q 6.5A 1.60Q 6.5A 1.60Q N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS All Ratings: Tc = 25°C unless otherwise specified.


    OCR Scan     		APT601R3BN APT551R3BN APT601R6BN APT551R6BN 551R3BN 601R3BN 551R6BN 601R6BN APT601R 3/551R3/601R6/551R6BN 3471A APT551R PDF

    SML601R3BN

    Abstract: LE17 SML551R3BN SML601R6BN 601R3BN 601R6BN
    Contextual Info: Ö1331A7 bOE D SEMELAB PLC GODONO lili 311 • S flL B MOS POWER iFFi ä T i f t ' . -I 5 lili SML601R3BN 551R3BN SML601R6BN SML551R6BN SEM E LAB 600V 550V 600V 550V 7.5A 7.5A 6.5A 6.5A 1.30Q 1.30Q 1.60Q 1.60Q N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS


    OCR Scan     		ai33ifl7 SML601R3BN SML551R3BN SML601R6BN SML551R6BN 3n-15 551R3BN 601R3BN 551R6BN 601R6BN LE17 SML551R3BN 601R6BN PDF