558 NPN Search Results

XR558

Abstract: XR558CP 558CP XR-558CP xr 558 XR-558 XR-559 XR559CP XR-559CP 559CP
Contextual Info: Z *E X flR XR-558/559 Quad Timing Circuits FUNCTIONAL BLOCK DIAGRAM GENERAL DESCRIPTION The XR-558 and the XR-559 quad tim ing circuits con­ tain four independent tim er sections on a single m ono­ lithic chip. Each of the tim er sections on the chip are

APPLICATION OF BC548 transistor

Abstract: PNP transistor bc546 BC548 pnp transistor BC547
Contextual Info: SEMICONDUCTOR BC546/7/8 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION . FEATURES ・High Voltage : BC546 VCEO=65V. ・For Complementary With PNP Type BC556/557/558. MAXIMUM RATING Ta=25℃ CHARACTERISTIC

BC547 transistor kec

Abstract: APPLICATION OF BC548 transistor BC547 BC547 transistor BC548 BC548 pnp transistor BC547 w 2 d bc548 pnp bc547 application note of transistor BC548
Contextual Info: SEMICONDUCTOR TECHNICAL DATA BC546/7/8 EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION . FEATURES • High Voltage : BC546 V C = 6 5 V . • For Complementary With PNP Type BC556/557/558. eo MAXIMUM RATINGS Ta=25°C CHARACTERISTIC

bc5476

Abstract: APPLICATION OF BC548 transistor BC547 bc547 pnp BC548 pnp bc547 transistor BC548 pnp transistor BC548 transistor pnp of transistor BC548 transistor bc547 features
Contextual Info: KOREA ELECTRONICS CO.,LTD. SEMICONDUCTOR TECHNICAL DATA BC546/7/8 EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION . FEATURES • High Voltage : BC546 V Ceo=65V. • For Complementary With PNP Type BC556/557/558. MAXIMUM RATINGS Ta=25°C

APPLICATION OF BC548 transistor

Abstract: BC547 BC548 BC548 B 001 BC548 pnp transistor bc547 pnp transistor bc547 features pnp bc547 transistor BC546 for bc548 npn transistor
Contextual Info: SEMICONDUCTOR BC546/7/8 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION . B C A FEATURES ᴌHigh Voltage : BC546 VCEO=65V. ᴌFor Complementary With PNP Type BC556/557/558. N E K G J D MAXIMUM RATING Ta=25ᴱ

APPLICATION OF BC548 transistor

Abstract: bc547 pnp BC547 BC548 pnp transistor pnp bc547 transistor bc548 pnp BC548 BC548 TRANSISTOR BC546 for bc548 npn transistor
Contextual Info: SEMICONDUCTOR BC546/7/8 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION . B C A FEATURES ・High Voltage : BC546 VCEO=65V. ・For Complementary With PNP Type BC556/557/558. N E K G J D MAXIMUM RATING Ta=25℃

CT1B

Abstract: keyboard schematic xt Capacitive touch waterproof KEYPAD secme PS2 KEYBOARD schematic secme eao CT016V secme Switch ps2 keyboard circuit secme keyboard
Contextual Info: Switches and Indicators 75 Switches and Indicators Index Series 75 552 01.2000 Keyboards with touch sensitive technology Page 553 The Principle behind the touch sensitive Switches Page 554 CT1V Page 555 CT1B Page 556 CT012V / CT016V Page 557 CT065V Page 558

Contextual Info: M19500/558-02+JAN Transistors Independent Transistor Array Military/High-RelY Number of Devices4 Type NPN/PNP PNP V(BR)CEO (V)60 V(BR)CBO (V)60 I(C) Max. (A)600m P(D) Max. (W) Minimum Operating Temp (øC)-65 Maximum Operating Temp (øC)200 I(CBO) Max. (A)

Contextual Info: M19500/558-01+JANTX Transistors Independent Transistor Array Military/High-RelY Number of Devices4 Type NPN/PNP PNP V(BR)CEO (V)60 V(BR)CBO (V)60 I(C) Max. (A)600m P(D) Max. (W) Minimum Operating Temp (øC)-65 Maximum Operating Temp (øC)200 I(CBO) Max. (A)

tektronix 576 curve tracer

Abstract: NDS351N high power pulse generator with mosfet PN channel MOSFET 10A tektronix type 576 curve tracer RC snubber circuit
Contextual Info: Application Note 558 Ralph Locher Introduction to Power MOSFETs and their Applications INTRODUCTION The Power MOSFETs that are available today perform the same function as Bipolar transistors except the former are voltage controlled in contrast to the current controlled Bipolar devices. Today

Contextual Info: M19500/558-02+JANTX Transistors Independent Transistor Array Military/High-RelY Number of Devices4 Type NPN/PNP PNP V(BR)CEO (V)60 V(BR)CBO (V)60 I(C) Max. (A)600m P(D) Max. (W) Minimum Operating Temp (øC)-65 Maximum Operating Temp (øC)200 I(CBO) Max. (A)

Contextual Info: M19500/558-01+JAN Transistors Independent Transistor Array Military/High-RelY Number of Devices4 Type NPN/PNP PNP V(BR)CEO (V)60 V(BR)CBO (V)60 I(C) Max. (A)600m P(D) Max. (W) Minimum Operating Temp (øC)-65 Maximum Operating Temp (øC)200 I(CBO) Max. (A)

Contextual Info: M19500/558-02+JANTXV Transistors Independent Transistor Array Military/High-RelY Number of Devices4 Type NPN/PNP PNP V(BR)CEO (V)60 V(BR)CBO (V)60 I(C) Max. (A)600m P(D) Max. (W) Minimum Operating Temp (øC)-65 Maximum Operating Temp (øC)200 I(CBO) Max. (A)

Contextual Info: M19500/558-01+JANTXV Transistors Independent Transistor Array Military/High-RelY Number of Devices4 Type NPN/PNP PNP V(BR)CEO (V)60 V(BR)CBO (V)60 I(C) Max. (A)600m P(D) Max. (W) Minimum Operating Temp (øC)-65 Maximum Operating Temp (øC)200 I(CBO) Max. (A)

Contextual Info: M19500/558-01 Transistors Independent Transistor Array Military/High-RelN Number of Devices4 Type NPN/PNP PNP V(BR)CEO (V)60 V(BR)CBO (V)60 I(C) Max. (A)600m P(D) Max. (W) Minimum Operating Temp (øC)-65 Maximum Operating Temp (øC)200 I(CBO) Max. (A) @V(CBO) (V) (Test Condition)

170N

Abstract: Sensick WL 12-2
Contextual Info: KD01_W170_de.qxd 24.03.2004 18:24 Uhr Seite 558 Reflexions-Lichtschranke WL 170 für transparente Objekte, Rotlicht – DC Reichweite 0,1 . . . 0,8 m Maßbild 12 28,6 Reflexions-Lichtschranke 2 1 8 16 1 4 10 7,3 Einstell-Möglichkeiten WL 170-P 122 WL 170-P 420

200khz power mosfet

Abstract: transistor c 558 mosfet 4b npn transistor dc 558 transistor dc 558 npn 12v 10A dc driver motor control mosfet mosfet driver with npn transistor ic 558 mosfet 300v 10a pulse transformer drive pwm ic
Contextual Info: National Semiconductor Application Note 558 Ralph Locher 1988 年 12 月 はじめに ゲート“G”に電気的にバイアスが印加されていない場合PN 接合で遮断されているため、いずれの方向にもゲート直下を電流

Transistor - BC 547, CL 100

Abstract: bc 104 npn transistor transistor C 548 B bc 408 equivalent BC548BC bc 558 equivalent bc 103 transistor c 548 equivalent of BC 399 NPN Transistor TRANSISTOR C 557 B
Contextual Info: BC546*BC 547 *BC 548 *BC549. BC 550 NPN S IL IC O N TR A N S IS T O R T R A N S IS T O R N P N S IL IC IU M Compì, of BC 556 at 560 Preferred device D is p o s itif recommandé General purpose BC 546/BC 547/BC 548 Usage général BC 546/BC 547/BC 548 Low noise BC 549/BC 550

transistor bc 488

Abstract: transistor bc 557 c bc 547 b transistor TRANSISTOR C 557 B TRANSISTOR BC 550 b transistor BC 490 C 547 B pin configuration bc 547 transistor transistor BC 557 transistor C 548 B
Contextual Info: t h o m s o n -c s f general purpose transistor selector guide — plastic case guide de sélection transistors usage général — boîtier plastique Case ^ ^ ^ 1 0 Polarity 92 CB-1% NPN PNP NPN PNP NPN 0,8.1 A 0,4.0,6 A «0,2 A PNP v CEO 20 V B Ç 2 3 8 .

BC 546 BP

Abstract: bc 547 bp transistors BC 548 BC 558 PNP 337A1 3001 pnp BC 557 npn tr bc 337 transistors BC 487 transistors BC 548 BC 558 33740
Contextual Info: general purpose transistors — plastic case O transistors usage général — boîtier plastique Type NPN M axim um ratings PNP pto t v CEO mW (V) 45 Characteristics a t 25°C h 2lE min N N N N N N N N N N BC 317 BC 317 A BC 317 B BC 320 BC 320 A BC 320 B

ZTX458

Abstract: ZTX558 ZTX758 BF493 ZTX4555 BF392 BF393 MPSA92 ZTX658 ZTX757
Contextual Info: TABLE 13 : NPN/PNP HIGH VOLTAGE TRANSISTORS The transistors shown in this table are designed for driving numerical indicator tubes, neon lamps and other applications requiring high voltage capability. Type Max V CE sat at hFE at V cbo V CEO V V mA V mA NPN

bc 339

Abstract: bc560 bc558c cbc560 bc557 bc560c ic 556 BC556A AMI siemens BC557B
Contextual Info: SIE D SIEM ENS • fl235b05 O O m b l b ÔTb « S I E G SIEMENS AKTIENGESELLSCHAF T v fl- Z l PNP Silicon AF Transistors • • • • BC 556 . BC560 High current gain Low collector-emitter saturation voltage Low noise between 30 Hz and 15 kHz Complementary types: BC 546, BC 547,

C 547 C

Abstract: C 548 B C 547 B ic 548 bc 547 Transistors bc 548 BC 546 BC548 BC 548 bc 548 B 15
Contextual Info: BC 546 • BC 547 • BC 548 Silizium-NPN-Epitaxial-Planar-NF-Transistoren Silicon NPN Epitaxial Planar AF Transistors Anwendung: Vor- und Treiberstufen Application: Pre and d river stages Besondere Merkmale: Features: • Verlustleistung 500 mW • Power dissipation 500 m W

mje13009 equivalent

Abstract: MJE13009 MJE130 CP289
Contextual Info: PROCESS CP289 Power Transistors 8.0 Amp NPN - High Voltage Transistor Chip PROCESS DETAILS Die Size 167 x 167 MILS Die Thickness 9.5 MILS Base Bonding Pad Area 59 x 29 MILS Emitter Bonding Pad Area 64 x 28 MILS Top Side Metalization Al - 45,000Å Back Side Metalization