MJE130 Search Results

mje13009g

Abstract: MJE130 2N2222 transistor to drive a relay MJE13009 MJE13009D
Contextual Info: MJE13009G SWITCHMODE Series NPN Silicon Power Transistors The MJE13009G is designed for high−voltage, high−speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE applications such as Switching Regulators, Inverters, Motor Controls,

T1P122

Abstract: T1P41C MJE30SST t1p41 T1P31 T1P41A BD211 2SD880Y 2SD88D 2N529B
Contextual Info: POWER PACKAGE TRANSISTORS NPN M a x im u m R a t in g s Type No. 2SC3039 MJE13005 T1PS0 vEB0 PD •CBO • vC8 (V) (V) (V) (W) (V) Min Min Min e Tc=25°C 500 400 700 400 500 400 7 50 9 Max 10 hFE 400 40 e 'c (A) Min 75 5 450 350 5 300 300 3 21 T1P48 400

MJE13003K

Abstract: Transistor 2N2222 NPN TO92 2N2222 NPN Transistor to 92 OF transistor 2N2222 to-92 npn transistors 700V 1A core ferroxcube Benchmark NPN Transistor 1.5A 700V
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MJE13003K NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTOR „ DESCRIPTION These devices are designed for high–voltage, high–speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V SWITCHMODE.

pswt

Abstract: MJE13003 TO-92 NPN Transistor 1.5A 700V
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MJE13003 NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTOR „ DESCRIPTION These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V applications in switch

mje13009 equivalent

Abstract: 2N2222 SOA mje13009l MJE13009L-T3P-T QW-R214-011 2n2222 transistor pin b c e 3V to 350V dc dc converter MJE13009-T3P-T 2N2222 transistor output curve free transistor and ic equivalent data
Contextual Info: UNISONIC TECHNOLOGIES CO.,LTD. MJE13009 NPN EPITAXIAL SILICON TRANSISTOR SWITCHMODE SERIES NPN SILICON POWER TRANSISTORS DESCRIPTION The MJE13009 is designed for high–voltage, high–speed power switching inductive circuits where fall time is critical. They

equivalent mje13005

Abstract: 2N2222 transistor output curve transistor mje13005 mje13005 equivalent
Contextual Info: UTC MJE13005 NPN EPITAXIAL SILICON TRANSISTOR NPN SILICON POWER TRANSISTORS DESCRIPTION These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE.

MJE13009

Abstract: 2N2222 transistor output curve mje13009l mje13009 CIRCUIT 2N2222 SOA MJE13009G tr 2n2222 MJE13009L-TF3-T
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MJE13009 NPN SILICON TRANSISTOR SWITCHMODE SERIES NPN SILICON POWER TRANSISTORS „ DESCRIPTION The MJE13009 is designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V switch mode applications such

*e13007

Abstract: bipolar transistor td tr ts tf equivalent of transistor mje13007
Contextual Info: UTC MJE13007 NPN EPITAXIAL SILICON TRANSISTOR NPN BIPOLAR POWER TRANSISTOR FOR SWITCHING POWER SUPPLY APPLICATIONS DESCRIPTION The UTC MJE13007 is designed for high–voltage, high–speed power switching inductive circuits where fall time is critical. It is particularly suited for 115 and 220 V

equivalent mje13005

Abstract: 1N4933 equivalent
Contextual Info: UTC MJE13005 NPN EPITAXIAL SILICON TRANSISTOR NPN SILICON POWER TRANSISTORS DESCRIPTION These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE.

MJE13003D

Abstract: HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR *13003d
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MJE13003D Preliminary NPN SILICON TRANSISTOR HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR „ DESCRIPTION The UTC MJE13003D is a NPN Power Transistor. It is intended to be used in applications requiring medium voltage capability and high switching speeds.

mje13003

Abstract: 2n2222 npn switching transistor mje13003 equivalent UTCMJE13003 2N2222 NPN Transistor features
Contextual Info: UTC MJE13003 NPN EPITAXIAL SILICON TRANSISTOR NPN SILICON POWER TRANSISTORS DESCRIPTION These devices are designed for high–voltage, high–speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V

equivalent mje13005

Abstract: Ferroxcube core 2N2222 curve mje13005 equivalent equivalent transistor 2N2905 MR826 equivalent circuit based on MJE13005 MJE13005 transistor mje13005
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MJE13005 NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTORS „ DESCRIPTION These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE.

MJE13004

Abstract: 13005 transistor 13005 13005 TRANSISTOR MJE13005 transistor 13005 CIRCUIT 13005 A tr 13005 PC 13005 TRANSISTOR MJE130
Contextual Info: MJE13004/13005 MJE13004/13005 High Voltage Switch Mode Application • High Speed Switching • Suitable for Switching Regulator and Motor Control TO-220 1 1.Base 2.Collector 3.Emitter NPN Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted

*E13009F

Abstract: MJE13009F
Contextual Info: MJE13009F MJE13009F High Voltage Switch Mode Applications • High Speed Switching • Suitable for Switching Regulator and Motor Control TO-220F 1 1.Base 2.Collector 3.Emitter NPN Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MJE13001-P NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTOR  FEATURES * Collector-base voltage: V BR CBO=600V * Collector current: IC=0.2A  ORDERING INFORMATION Ordering Number Lead Free Halogen Free MJE13001L-P-x-T92-B

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MJE13003-E NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR  DESCRIPTION The UTC MJE13003-E designed for use in high–volatge, high speed,power switching in inductive circuit, It is particularly

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MJE13009-P NPN SILICON TRANSISTOR SWITCHMODE SERIES NPN SILICON POWER TRANSISTORS „ DESCRIPTION The MJE13009-P is designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V switch mode applications

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MJE13002-E NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR „ DESCRIPTION The UTC MJE13002-E designed for use in high–volatge, high speed,power switching in inductive circuit, It is particularly

mje13009

Abstract: MJE-13009 mje13009 equivalent
Contextual Info: SavantIC Semiconductor Product Specification MJE13009 Silicon NPN Power Transistors DESCRIPTION •With TO-3PN package ·High voltage ,high speed APPLICATIONS ·Particularly suited for 115V and 220V switchmode applications such as switching regulators,inverters ,motor controls,solenoid/

MJE13007

Abstract: MJE-13007 mje13007 equivalent
Contextual Info: SavantIC Semiconductor Product Specification MJE13007 Silicon NPN Power Transistors DESCRIPTION •With TO-220C package ·High voltage ,high speed APPLICATIONS ·Particularly suited for 115V and 220V switchmode applications such as switching regulators,inverters ,motor controls,solenoid/

transistor MJe13007

Abstract: mje13007 equivalent MJE13007 transistormje13007
Contextual Info: NPN SILICON TRANSISTOR MJE13007 ELECTRONIC TRANSFORMERS , POWER SWICHING CIRCUIT ABSOLUTE MAXIMUM RATINGS TA=25oC CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VCBO V Collector-Emitter Voltage VCEO VEBO 700 400 9 8 80 Emitter-Base Voltage Collector Current

MJE13003D

Abstract: High voltage fast switching power transistor to92 300V NPN transistor to-92
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MJE13003D Preliminary NPN SILICON TRANSISTOR HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR „ DESCRIPTION The UTC MJE13003D is a NPN Power Transistor. It is intended to be used in applications requiring medium voltage capability and high switching speeds.

MJE13008

Abstract: 13009
Contextual Info: MJE13008/13009 MJE13008/13009 High Voltage Switch Mode Application • High Speed Switching • Suitable for Switching Regulator and Motor Control TO-220 1 1.Base 2.Collector 3.Emitter NPN Silicon Transisor Absolute Maximum Ratings TC=25°C unless otherwise noted

2n222 TRANSISTOR

Abstract: MJE13005G equivalent mje13005 transistors mje13005 transistor 2n222 circuit based on MJE13005 1N493 AMP24 1N5820 2N222
Contextual Info: MJE13005G SWITCHMODEt Series NPN Silicon Power Transistors These devices are designed for high−voltage, high−speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE applications such as Switching Regulator’s, Inverters, Motor Controls,