55WMB Search Results

Contextual Info: SCD#QM5323 Source Control Drawing Upscreening/Manufacturing Specification P/N FT7C261-55WMB-CY Title Page . List of Effective Pages .

CY7C263-35PC

Abstract: 7C261 CY7C263 CY7C26345DMB cerdip z PACKAGE 7C264 C261 CY7C261 CY7C264 f1b0
Contextual Info: CY7C261 CY7C263/CY7C264 CYPRESS Features • CMOS for optimum speed/power • Windowed for reprogrammability • High speed — 20 ns commercial — 25 ns (military) • Low power — 660 mW (commercial) — 770 m\V (military) • Super low standby power (7C261)

27c256-200

Abstract: 27C256-70 eprom 27c256 27C256-3 cerdip z PACKAGE eprom 27c256 28 PIN DIP 150 NS 27C256 27C256-2 27C256-45 CY27C256
Contextual Info: V CY27C256 CYPRESS Features • W ide speed range — 45 ns to 200 ns com m ercial and m ilitary • Low power — 248 raW (commercial) — 303 mW (m ilitary) • Low standby power — Less th a n 83 raW when deselected • ± 10% Power supply tolerance

7c251

Abstract: a1s smd smd code A1s smd diode code A1s CY7C251 CY7C254 65WMB
Contextual Info: CY7C251 CY7C254 y CYPRESS 16K x 8 Power-Switched and Reprogrammable PROM • Direct replacement for bipolar PRO M s • C apable o f w ithstanding > 2001V static discharge Features • CMOS for optimum speed/power • Windowed for reprogrammability • High speed

Contextual Info: CY7C251 CY7C254 CYPRESS SEMICONDUCTOR Features • CMOS for optimum speed/power • Windowed for reprogrammability • High speed — 45 ns 16,384 x 8 PROM Power Switched and Reprogrammable • TTL-compatible I/O • D irect replacement for bipolar PROMs • Capable o f w ithstanding > 2001V stat­

Contextual Info: CY27C128 '0 C Y PR ESS 128K 16K x 8-Bit CMOS EPROM Features • Wide speed range — 45 ns to 200 ns (commercial and military) • Low power — 248 mW (commercial) — 303 mW (military) • Low standby power — Less than 83 mW when deselected • ±10% Power supply tolerance

7C251

Abstract: C2515 SMD DIODE A13 C251-5 CY7C251-45WC CY7C251 CY7C254 01d smd code smd diode code A1s 5962-895370
Contextual Info: CY7C251 CY7C254 y CYPRESS Features • CMOS for optimum speed/power • Windowed for reprogrammability • High speed — 45 ns • Low power — 550 mW commercial — 660 mW (military) • Super low standby power (7C251) — Less than 165 mW when deselected

46E SMD CODE

Abstract: 7C271 7C274 CY7C271 CY7C274 C2716 RAAW
Contextual Info: MbE » CYPRE SS S EM ICONDUCTOR CYPRESS SEMICONDUCTOR Features • CMOS for optimum speed/power • Windowed for reprogrammability • Highspeed — 30 as commercial — 35 as (military) • Low power — 660 mW (commercial) — 715 mW (military) • Super low standby power

27H256

Abstract: mil std 1275 power supply H-256 H2565
Contextual Info: PRELIMINARY 32K X Features • CMOS for optimum speed/power • High speed — tAA = 25 ns max. commercial — tAA = 35 ns max. (military) • Low power — 275 mW max. — Less than 85 mW when deselected • Byte-wide memory organization • 100% reprogrammable in the

Contextual Info: CY27H512 PRELIMINARY ^ /C Y P R E S S 64K X Features • CMOS for optimum speed/power • High speed — t.4A = 25 ns max. commercial — t^A — 35 ns max. (military) • Low power — 275 mW max. — Less than 85 mW when deselected • Byte-wide memory organization

Contextual Info: CY7C286 CY7C287 CYPRESS 65,536 x 8 Reprogrammable SEMICONDUCTOR Asynchronous/Registered PROMs Features Functional Description The CY7C286 and the CY7C287 are high-perfbrmance 65,536 by 8-bit CMOS PROMs. The CY7C286 is configured in the JEDEC-standard S12K EPROM pin­

Contextual Info: V CYPRESS Features 32K X8 High-Speed CMOS EPROM Functional Description rapid transition to and from three-stated outputs. The CY27H256 is a high-perform ance, 256K CM OS E P R O M organized in 32 Kbytes. It is available in industry-standard 28-pin, 600-mil DIP, 32-pin LCC and

Contextual Info: CY27C256 y CYPRESS 32K x 8-Bit CMOS EPROM into a low-power stand-by mode. The CY27C256 is packaged in the industry standard 600-mil DIP, PLCC, and TSO P packages. T he CY27C256 is also available in a C erD IP package equipped with an erasure window to provide for reprogram ­

27C256

Abstract: 27C256-45 CY27C256 27c256-200 27C256-150
Contextual Info: 32K X 8-Bit CMOS EPROM Features • Wide speed range — 45 ns to 200 ns commercial and m ilitary • Low power — 248 mW (commercial) — 303 mW (military) • Low standby power — Less th a n 83 mW when deselected • ± 10% Power supply tolerance Functional Description

Contextual Info: ¿/iiuiu. luööutiy, rwufucuy io, Revision: August 18,1994 ^ CYPRESS CY27H010 128K X 8 High-Speed CMOS EPROM Features Functional Description • CMOS for optimum speed/power • Highspeed — tAA = 25 ns max. commercial — *a a = 35 ns max. (military)

Contextual Info: z/czso: inursaay. May i s issm Revision: August 19,1994 CY27C256 W CYPRESS Features • Wide speed range — 45 ns to 200 ns commercial and military • Low power — 248 mW (commercial) — 303 mW (military) • Low standby power — Less than 83 mW when deselected

LC 7258

Abstract: 333Q CY7C287 32fl diode A14A
Contextual Info: CY7C287 * CYPRESS 64K x 8 Reprogrammable Registered PROM Features • Slim 300-mil package • CMOS for optimum speed/power • Capable o f withstanding > 2001V static discharge • Windowed for reprogrammability • High speed — tSA = 45 ns — tc o = 15 ns

dip-p8

Abstract: PY264
Contextual Info: PY264 8K X 8 REPROGRAMMABLE PROM FEATURES EPROM Technology for reprogramming Single 5V±10% Power Supply High Speed – 35/45/55 ns Commercial – 35/45/55 ns (Military) Windowed devices for reprogramming Low Power Operation: – 660 mW Commercial – 770 mW Military

C2877

Abstract: c2874 7C28 c2872 C2879 CY7C287 7C287-65 CY7C287-55WMB
Contextual Info: 1CY 7C28 7 CY7C287 64K x 8 Reprogrammable Registered PROM Features put enable that can be programmed to be synchronous ES or asynchronous (E). It is available in a 28-pin, 300-mil package. The address set-up time is 45 ns and the time from clock HIGH to output valid is 15 ns.

A15C

Abstract: CY7C287 CY7C287-55PC LCOS uv
Contextual Info: CY7C286 CY7C287 Features • Capable of withstanding >2001V static discharge • CMOS for optimum speed/power • Windowed for reprogrammability Functional Description • High speed — tSA = 45 ns 7C287 — tco = 15 ns (7C287) — tACC = 50 ns (7C286)

7C271

Abstract: CY7C271-45WMB 333Q C271 7C274 CY7C271 CY7C274 CY7C274-55WC 57C27-1 7C271-55
Contextual Info: CY7C271 CY7C274 32K x 8 PROM PowerSwitched and Reprogrammable Features Functional Description • CMOS for optimum speed/power • Windowed for reprogrammability • High speed — 30 ns commercial — 35 ns (military) • Low power — 660 mW (commercial)

CY27C040

Contextual Info: ADVANCED INFORMATION CYPRESS MILITARY SPECIFICATIONS Group A Subgroup Testing DC C haracteristics Para neter Subgroups VoH 1, 2, 3 VOL \ 1, 2, 3 VlH 1,2,-3 \ lo z ' 1 ,2 ,3 / \ Iix Icc 1, 2, 3 \ V il 1 ,2 ,3 \ _ IsB > 1 ,2 ,3 .\ \ •" 1 ,2 ,3 - Sw itching C haracteristics

7C261

Abstract: 7c264
Contextual Info: CY7C261 CY7C263/CY7C264 WÈP CYPRESS 8K x 8 Power-Switched and Reprogrammable PROM floating-gate technology and byte-wide in­ telligent programming algorithms. The CY7C261, CY7C263, and CY7C264 are plug-in replacements for bipolar de­ vices and offer the advantages of lower

LC 7258

Abstract: C-274
Contextual Info: bSE D C Y P R ES S S E M I C O N D U C T O R SSÖRbbE QQ1GS50 T M «CYP CY7C271 CY7C274 CYPRESS SEMICONDUCTOR Features Functional Description • CMOS for optimum speed/power • Windowed for reprogrammability • Highspeed •— 30 ns commercial •— 35 ns (military)