578MW Search Results

EM614081-70

Abstract: EM614081TS-70 SOJ-28
Contextual Info: EtronTech EM614081 512K x 8 Fast Page Mode DRAM Preliminary 9/97 Features • 524,288 word by 8 bit organization • Fast access time: 70ns • Single power supply of 5V¡Ó10% • Fast Page Mode Operation • Low Power • • • - 578mW MAX. Operating

toshiba 7 pin a215

Abstract: A227
Contextual Info: TOSHIBA TC514800AJL/AFTL70/80 524,288 WORD X 8 BIT DYNAMIC RAM DESCRIPTION The TC514800AJL/AFTL is the new generation dynamic RAM organized 524,288 word by 8 bit. The TC514800AJL/AFTL utilizes Toshiba’s CMOS silicon gate process technology as well as advanced circuit

Contextual Info: 1,M3,575 1,'ORDX 4 BIT DYNAMIC RAM * This is a ^ a n c e d information and specifications are subject to change without notice. DESCRIPTION The TC514400JL/ZL is the new generation dynamic RAM organized 1,048,576 words by 4 bits. The TC514400JL/ZL utilizes TOSHIBA'S CMOS Silicon gate process technology as well as

A302 w3

Abstract: aa z8b
Contextual Info: TOSHIBA MOS MEMORY PRODUCTS TC514410J/Z-80» TC514410J/Z-10 DESCRIPTION’ The TC514410J/Z i s th e new g e n e r a t i o n dynamic RAM o r g a n i z e d 1 , 0 4 8 , 5 7 6 w ords by 4 b its. The TC514410J/Z u t i l i z e s TOSHIBA'S CMOS S i l i c o n g a t e p r o c e s s t e c h n o l o g y a s

Contextual Info: LM 7372 LM7372 High Speed, High Output Current, Dual Operational Amplifier T ex a s In s t r u m e n t s Literature Number: SNOS926D Semiconductor LM 7372 High Speed, High O u tp u t C urrent, Dual O perational A m p lifie r General Description Features The LM7372 is a high speed dual voltage feedback amplifier

Contextual Info: TOSHIBA MEMORY E lectron ic C om ponents B u sin ess S ecto r 1 ,0 4 8 ,5 7 6 WORD X 4 BIT DYNAMIC RAM T C 5 1 4 4 0 2 J/Z-80 T C 5 1 4 4 0 2 J/Z-10 DESCRIPTION The TC 5 1 4402J/Z is the n e w generation dynamic R A M organized 1,048,576 words b y 4 bits.

Contextual Info: * T h is a re is advanced s u b je c t to in fo rm a tio n change w ith o u t and specifications notice. 1 , 0 4 8 , 5 7 6 W O R D x 4 BIT D Y N A M I C R A M DESCRIPTION The TC514410J/Z is the new generation dynamic RAM organized 1,048,576 words by 4 bits. The TC514410J/Z utilizes TOSHIBA'S CMOS Silicon gate process technology as

Contextual Info: TOSHIBA _ MEMORY _ E lectronic C omponents B usiness S ector _ 4,194,304 W O R D X 1 B IT D Y N A M IC RAM T C 5 1 4 1 0 1 J/ Z -8 0 T C 5 1 4 1 0 1 J / Z -1 0 DESCRIPTION The TC514101J/Z is the new generation dynamic RAM organized 4,194,304 words by 1

dap 002 so-16

Abstract: LM7372 LM7372ILD LM7372ILDX LM7372IMA LM7372IMAX LM7372MR LM7372MRX SOIC-16
Contextual Info: LM7372 High Speed, High Output Current, Dual Operational Amplifier General Description Features The LM7372 is a high speed dual voltage feedback amplifier that has the slewing characteristic of current feedback amplifiers; yet it can be used in all traditional voltage feedback

Contextual Info: MITSUBISHI LS Is M 5 M 4 4 8 A J , T P , R T - 6 , - 7 , - 8 , - 6 S , - 7 S , - 8 S FAST PAGE MODE 4194304-BIT 524288-WORD BY 8-BIT DYNAMIC RAM DESCRIPTION This is a family of 524288-w ord by 8 -b it dynamic RAMS, :abricated with the high performance CMOS process, and is

Contextual Info: LM7372 www.ti.com SNOS926E – MAY 1999 – REVISED MARCH 2013 LM7372 High Speed, High Output Current, Dual Operational Amplifier Check for Samples: LM7372 FEATURES DESCRIPTION 1 • 23 • • • • • • • The LM7372 is a high speed dual voltage feedback

Contextual Info: LM7372 www.ti.com SNOS926D – MAY 2004 – REVISED JUNE 2008 LM7372 High Speed, High Output Current, Dual Operational Amplifier Check for Samples: LM7372 FEATURES • 1 • 23 • • • • • • −80dBc highest harmonic distortion @1MHz, 2VPP Very high slew rate: 3000V/µs

Contextual Info: PJDD514260ESL-01 作成 ：2001 年 1 月 1電子デバイス MSM514260E/ESL 暫定 262,144-Word x 16-Bit DYNAMIC RAM : 高速ページモード • 概要 MSM514260E/ESL はCMOS プロセス技術を用いた 262,144 ワードx16 ビット構成のダイナミッ

Contextual Info: ADS5500 SBAS303C − DECEMBER 2003 − REVISED MARCH 2004 14ĆBit, 125MSPS AnalogĆtoĆDigital Converter D Recommended Amplifiers: FEATURES D 14-Bit Resolution D 125MSPS Sample Rate D High SNR: 70.5dBFS at 100MHz fIN D High SFDR: 82dBc at 100MHz fIN D 2.3VPP Differential Input Voltage

TC514400

Abstract: TCWP
Contextual Info: • ^ Sill - . ■■- - - ^ M P M R m Ê t o -.i— ■ SfflMfaWWW« mtssSsm M — l ■ ¡■ ¡ p s i 1,048,576 WORD x 4 BIT DYNAMIC RAM * This is advanced information and specifications are subject to change without notice. DESCRIPTION The TC514400J/Z is the new generation dynamic RAM organized 1,048,576 words by 4

TG5144

Abstract: TD514
Contextual Info: TOSHIBA MOS MEMORY PRODUCTS TC514402J/Z-80, TC514402J/Z-10 DESCRIPTION The T C 5 1 4 4 0 2 J / Z is the n e w g e n e r a t i o n dy n a m i c R A M o r g a n i z e d 1 , 048,576 w o r d s by 4 bits. The T C 5 1 4 4 0 2 J / Z u t i l i z e s T O S H I B A ' S C MOS S i l i c o n gate p r ocess t e c h n o l o g y as w e l l

Contextual Info: KM416C256LL CMOS DRAM 256Kx 16 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM416C256LL is a CMOS high speed 262,144 bit x 16 Dynamic Random Access Memory. Its design is optimized for high performance applications

Contextual Info: SAMSUNG ELECTRONICS INC bME D KM416C256/L/SL • 7^4142 DD1343Q Q24 I SHGK CMOS DRAM 256K x 16 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM416C256/USL is a CMOS high speed 262,144 bit x 16 Dynamic Random Access Memory. Its

Contextual Info: CMOS DRAM KM416C256LL 256K x 16 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The S am sung KM416C256LL is a CMOS high speed 262,144 b it x 16 D ynam ic Random A cce ss M em ory. Its design is op tim ized fo r high perform ance ap p lica tio n s

Contextual Info: LM7372 www.ti.com SNOS926E – MAY 1999 – REVISED MARCH 2013 LM7372 High Speed, High Output Current, Dual Operational Amplifier Check for Samples: LM7372 FEATURES DESCRIPTION 1 • 23 • • • • • • • The LM7372 is a high speed dual voltage feedback

Contextual Info: LM7372 www.ti.com SNOS926E – MAY 1999 – REVISED MARCH 2013 LM7372 High Speed, High Output Current, Dual Operational Amplifier Check for Samples: LM7372 FEATURES DESCRIPTION 1 • 23 • • • • • • • The LM7372 is a high speed dual voltage feedback

M514170

Abstract: ZIP40-P-475
Contextual Info: O K I Semiconductor MSM5 14170 A/ASL 262,144-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM514170A/ASL is a new generation Dynamic RAM organized as 262,144-word x 16-bit configuration. The technology used to fabricate the MSM514170A/ASL is OKI's CMOS silicon gate process

AM9130APC

Abstract: AM9130BPC AM9130CPC AM9130DPC AM9130EPC AM91L30BPC AM91L30CPC AM91L L30D Am9130/40
Contextual Info: Am9130 •Am91L30 1024 x 4 Static R/W Random Access Memories DISTINCTIVE CHARACTERISTICS GENERAL DESCRIPTION • • • • • The Am9130 and Am91L30 products are high performance, adaptive, low-power, 4k-bit, static, read/write random access memories. They are implemented as 1024 words by 4 bits per

SOJ42

Contextual Info: お客様各位 資料中の「沖電気」「ＯＫＩ」等名称の OKI セミコンダクタ株式会社への変更について 2008 年 10 月 1 日を以って沖電気工業株式会社の半導体事業は OKI セミコン ダクタ株式会社に承継されました。 従いまして、本資料中には「沖電気工業株