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    Samsung Semiconductor KMM59256BN-80

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    Untitled

    Abstract: No abstract text available
    Text: 59256BN DRAM MODULES 2 5 6 K X 9 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM M 59256BN is a 2 6 2 ,1 4 4 bit X 9 Dynamic RAM high density memory module. The Sam­ sung KM M 59256BN consist of two 1M bit DRAMs


    OCR Scan     		PDF KMM59256BN 59256BN 44C256BJ 20-pin 256J-256K 18-pin 30-pin 59256BN- 130ns

    KMM59256BN

    Abstract: KMM59256BN7 59256BN KMMS9256BN-8
    Text: 59256BN DRAM MODULES 2 5 6 K X 9 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung K M M 5 9 2 5 6 B N is a 2 6 2 ,1 4 4 bit X 9 Dynamic RAM high density m em ory module. The Sam­ sung K M M 5 9 2 5 6 B N co n sist o f tw o 1M bit DRAMs


    OCR Scan     		PDF KMM59256BN 18-pin 59256BN KMM59256BN KMM59256BN7 KMMS9256BN-8

    41C1000

    Abstract: fujitsu 814100 TC 55464 toshiba HN62304 hn623257 658128 816b 41c464 hn62324 M7202A
    Text: MEM ORY ICs FUNCTION GUIDE 3. C R O S S REFERENCE GUIDE 3.1 DRAM Density Org. Samsung Mode Toshiba Hitachi Fujitsu H M 51 256 M B 81256 NEC Oki 64K X 1 Page K M 416 4 25 6 K X 1 F. Page KM 41C256 TC 51256 Nibble KM 41C257 TC51257 S. C olu m n KM 41C258 TC 51258


    OCR Scan     		PDF 41C256 41C257 41C258 41C464 41C466 41C1000 44C256 44C258 44C1002 TC51257 fujitsu 814100 TC 55464 toshiba HN62304 hn623257 658128 816b hn62324 M7202A