5962-86063 15 Search Results

5962-8606301XA

Abstract: SMJ27C256-25JM 27C256-15 27C256-17 27C256-20 27C256-25 SMJ27C256 SMJ27C256-30JM
Contextual Info: UVEPR OM UVEPROM SMJ27C256 Austin Semiconductor, Inc. 256K UVEPROM PIN ASSIGNMENT Top View UV Erasable Programmable Read-Only Memory 32-Pin DIP (J) (600 MIL) AVAILABLE AS MILITARY SPECIFICATIONS VPP A12 A7 A6 A5 A4 A3 A2 A1 A0 DQ0 DQ1 DQ2 GND • SMD 5962-86063

Contextual Info: WS27C256L Military 32Kx 8 CMOS EPROM KEY FEATURES • High Performance CMOS • Ceramic Leadless Chip Carrier CLLCC 120 ns Access Time EPI Processing • Fast Programming - • DESC SMD No. 5962-86063 — ESD Protection Exceeds 2000 Volts • 300 Mil DIP or Standard 600 Mil DIP

5962-8606301XA

Abstract: 5962-8606301 5962-8606305XA UVEPROM 5962-8606302XA SMD MARKING CODE A12 General Instrument 27c256 SMJ27C256-25JM code eprom smd smd code a12
Contextual Info: UVEPROM SMJ27C256 AS27C256 Austin Semiconductor, Inc. 256K UVEPROM PIN ASSIGNMENT Top View UV Erasable Programmable Read-Only Memory 28-Pin DIP (J) (600 MIL) AVAILABLE AS MILITARY SPECIFICATIONS VPP A12 A7 A6 A5 A4 A3 A2 A1 A0 DQ0 DQ1 DQ2 GND • SMD 5962-86063

Contextual Info: WS27C256F PRELIMINARY MILITARY 32K x 8 CMOS EPROM • KEY FEATURES * EPI Processing Fast Access Time — 90 ns Over Full Mil Temp Range — Latch-up Immunity Up to 200 mA • Low Power Consumption • DESC SMD No. 5962-86063 — ESD Protection Exceeds 2000V

S27C256

Contextual Info: WS27C256L Military 32K x 8 CMOS EPROM KEY FEATURES • High Performance CMOS • Ceramic Leadless Chip Carrier CLLCC — 120 ns Access Time • EPI Processing — Latch-Up Immunity to 200 mA • Fast Programming — ESD Protection Exceeds 2000 Volts • DESC SMD No. 5962-86063

5962-8606301XA

Abstract: SMJ27C256 27C256-15 27C256-17 27C256-20 27C256-25 SMJ27C256-30JM SMJ27C256-17JM
Contextual Info: UVEPROM SMJ27C256 Austin Semiconductor, Inc. 256K UVEPROM PIN ASSIGNMENT Top View UV Erasable Programmable Read-Only Memory 32-Pin DIP (J) (600 MIL) AVAILABLE AS MILITARY SPECIFICATIONS VPP A12 A7 A6 A5 A4 A3 A2 A1 A0 DQ0 DQ1 DQ2 GND • SMD 5962-86063 • MIL-STD-883

S27C256

Contextual Info: WS27C256L Military 32K x 8 CMOS EPROM KEY FEATURES • Ceramic Leadless Chip Carrier CLLCC • High Performance CMOS — 120 ns Access Time • EPI Processing • Fast Programming — Latch-Up Immunity to 200 mA • DESC SMD No. 5962-86063 — ESD Protection Exceeds 2000 Volts

Contextual Info: WS27C256L Military 32K x 8 CMOS EPROM KEY FEATURES High Performance CMOS • Ceramic Leadless Chip Carrier CLLCC • EPI Processing — 120 ns Access Time — Latch-Up Immunity to 200 mA • Fast Programming • DESC SMD No. 5962-86063 • 300 Mil DIP or Standard 600 Mil DIP

smd code marking A8

Abstract: WS27C256L WS27C256L-12 WS27C256L-12CMB WS27C256L-12DMB WS27C256L-12TMB WS27C256L-15 WS27C256L-15DMB WS27C256L-15TMB WS27C256L-20
Contextual Info: WS27C256L Military 32K x 8 CMOS EPROM KEY FEATURES • High Performance CMOS • Ceramic Leadless Chip Carrier CLLCC • EPI Processing — 120 ns Access Time • Fast Programming • DESC SMD No. 5962-86063 • 300 Mil DIP or Standard 600 Mil DIP — Latch-Up Immunity to 200 mA

WS27C256L

Abstract: capacitor, 1000 microfarad and 35 volts WS27C256L-12 WS27C256L-12CMB WS27C256L-12DMB WS27C256L-12TMB WS27C256L-15 WS27C256L-15DMB WS27C256L-15TMB WS27C256L-20
Contextual Info: WS27C256L Military 32K x 8 CMOS EPROM KEY FEATURES • High Performance CMOS • Ceramic Leadless Chip Carrier CLLCC • EPI Processing — 120 ns Access Time • Fast Programming • DESC SMD No. 5962-86063 • 300 Mil DIP or Standard 600 Mil DIP — Latch-Up Immunity to 200 mA

57C256f

Abstract: military part marking symbols 57C256 WS57C256F-55DMB WS57C256F-35J 57C256F-55 WS57C256F WS57C256F-35 WS57C256F-45 WS57C256F-55
Contextual Info: WS57C256F HIGH SPEED 32K x 8 CMOS EPROM KEY FEATURES • Immune to Latch-UP • Fast Access Time — t ACC = 35 ns — Up to 200 mA • ESD Protection Exceeds 2000 Volts • Available in 300 Mil DIP and PLDCC • DESC SMD No. 5962-86063 — t CE = 35 ns • Low Power Consumption

28-PIN CERDIP

Abstract: S57 SMD
Contextual Info: WS57C256F HIGH SPEED 32K x 8 CMOS EPROM KEY FEATURES • Immune to Latch-UP • Fast Access Time — tACC = 35 ns — Up to 200 mA ESD Protection Exceeds 2000 Volts • Available in 300 Mil DIP and PLDCC • DESC SMD No. 5962-86063 — t CE = 35 ns • • Low Power Consumption

Contextual Info: = = = — —' — — m S4E » — oooia^Q 203 • iiiia f WS57C256F WAFER SCALE INTEGRATION HIGH SPEED 32K x 8 CMOS EPROM KEY FEATURES • EPI Processing • Fast Access Time — 35 ns — Latch-up Immunity Up to 200 mA • Low Power Consumption • DESC SMD No. 5962-86063

27c256l

Contextual Info: WS27C256L Military 32K x 8 CMOS EPROM KEY FEATURES • Ceramic Leadless Chip Carrier CLLCC • High Performance CMOS — 120 ns A ccess Tim e • EPI Processing * Fast Programming — Latch-U p Im m unity to 200 m A * DESC SMD No. 5962-86063 — ESD Protection E xceeds 2000 Volts

57C256

Abstract: 57C256F 57C25 57C256F-70 57c256f-45
Contextual Info: WS57C256F HIGH SPEED 32K x 8 CMOS EPROM KEY FEATURES • Fast Access Time • Immune to Latch-UP — *ACC = 35 ns — Up to 200 mA • ESD Protection Exceeds 2000 Volts • Available in 300 Mil DIP and PLDCC • DESC SMD No. 5962-86063 — t CE = 35 ns • Low Power Consumption

57C256

Abstract: 57C256f WS57C256F-55DMB wsi 57c256f-55 WS57C256F-55 WS57C256F WS57C256F-35 WS57C256F-45 WS57C256F-70 57c256f-70
Contextual Info: WS57C256F HIGH SPEED 32Kx 8 CMOS EPROM KEY FEATURES • Immune to Latch-UP • Fast Access Time — *ACC = 35 ns — Up to 200 mA ESD Protection Exceeds 2000 Volts • Available in 300 Mil DIP and PLDCC • DESC SMD No. 5962-86063 — t CE = 35 ns • • Low Power Consumption

Contextual Info: WS57C256F HIGH SPEED 32K x 8 CMOS EPROM • KEY FEATURES • Immune to Latch-UP Fast Access Time — t Ac c = 35 ns — Up to 200 mA ESD Protection Exceeds 2000 Volts • Available in 300 Mil DIP andPLDCC • DESC SMD No. 5962-86063 — t CE = 35 ns • • Low Power Consumption

Contextual Info: WS57C256F HIGH SPEED 32K x 8 CMOS EPROM KEY FEATURES • Immune to Latch-UP • Fast Access Time — t ACC = 35 ns — t CE = 35 ns — Up to 200 mA • ESD Protection Exceeds 2000 Volts • Available in 300 Mil DIP and PLDCC • DESC SMD No. 5962-86063 • Low Power Consumption

57C256F-70

Contextual Info: WS57C256F HIGH SPEED 32K x 8 CMOS EPROM KEY FEATURES • Fast Access Time • Immune to Latch-UP — t Ac c = 35 ns — Up to 200 mA ESD Protection Exceeds 2000 Volts * Available in 300 Mil DIP and PLDCC * DESC SMD No. 5962-86063 — t CE = 35 ns * • Low Power Consumption

Contextual Info: WS57C256F HIGH SPEED 32K x 8 CMOS EPROM KEY FEATURES • Immune to Latch-UP • Fast Access Time — t ACC = 35 ns — Up to 200 mA • ESD Protection Exceeds 2000 Volts — t CE = 35 ns • Low Power Consumption • Available in 300 Mil DIP and PLDCC • DESC SMD No. 5962-86063

Contextual Info: WS57C256F HIGH SPEED 32K x 8 CMOS EPROM KEY FEATURES • Fast Access Time * Immune to Latch-UP — l ACC = 35 ns — Up to 200 mA ESD Protection Exceeds 2000 Volts • Available in 300 Mil DIP andPLDCC • DESC SMD No. 5962-86063 — t CE = 35 ns • • Low Power Consumption

57C256

Contextual Info: WS57C256F HIGH SPEED 32K x 8 CMOS EPROM KEY FEATURES • EPI Processing • Fast Access Time — 35 ns — Latch-up Immunity Up to 200 mA • Low Power Consumption • DESC SMD No. 5962-86063 • Standard EPROM Pinout GENERAL DESCRIPTION The W S57C256F is a High Performance 256K UV Erasable Electrically Programmable Read Only Memory. It is

Contextual Info: WS57C256F MILITARY HIGH SPEED 32K x 8 CMOS EPROM KEY FEATURES • Fast Access Time • EPI Processing 55 ns — Latch-up Immunity Up to 200 mA • Low Power Consumption • DESC SMD No. 5962-86063 • Standard EPROM Pinout GENERAL DESCRIPTION The WS57C256F is a High Performance 256K UV Erasable Electrically Programmable Read Only Memory. It is

Contextual Info: WS27C256F MILITARY 32K x 8 CMOS EPROM KEY FEATURES • Fast A ccess Tim e • EPI P rocessing — 90 ns O ver Full Mil Te m p R ange — Latch-up Im m unity Up to 200 mA • Low Pow er C onsum ption — ESD P rote ction E xceed s 2000V • DESC SMD No. 5962-86063