S27C256 Search Results

Contextual Info: S27C256L Military 32Kx 8 CMOS EPROM KEY FEATURES • High Performance CMOS • Ceramic Leadless Chip Carrier CLLCC 120 ns Access Time EPI Processing • Fast Programming - • DESC SMD No. 5962-86063 — ESD Protection Exceeds 2000 Volts • 300 Mil DIP or Standard 600 Mil DIP

d2764c

Abstract: MK48Z12B-20 IMS1630 MK48Z02BU-25 VQC10 M27512F1 UPD27128D M2716F1 thomson RT 463 Schematic STR S6706
Contextual Info: m e m o r y pr o d u c ts databook SGS-THOMSON ® ® H lL Ig ? [§ © R IO (g i MEMORY PRODUCTS DATABOOK 1st E D IT IO N JUNE 1988 USE IN LIFE SUPPORT MUST BE EXPRESSLY AUTHORIZED SGS-THOM SON’ PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT

27C256 wsi

Abstract: 27C256F
Contextual Info: DE | TSBTbTG 0000214 G | T-U-Q-Z^ WAFER SCALE INTEGRATION S27C256L ADVANCE INFORMATION WAFERSCAIÆ INTEGRATION, INC. 32K 8 CMOS EPROM X KEY FEATURES • 300 Mil Dip or Standard 600 Mil Dip Fast Access Time — 90 ns • EPI Processing Low Power Consumption

HD637B01VOP

Abstract: HD63701VOP HD63705VOP hd63701xop HD637A01VOP HD64F3048F16 MB8516 HD637B01YOP HD63701YOP lh57257
Contextual Info: ＡＦ−９７００ ＳＥＲＩＥＳ ＤＥＶＩＣＥ ＬＩＳＴ ＡＦ−９７０４ ＥＰＲＯＭ ＡＦ−９７０５ ＭＯＳ ＡＦ−９７０６ ＥＰＲＯＭ ＡＦ−９７０７ ＰＣ ＡＦ−９７２１ ＧＡＮＧ ＰＲＯＧＲＡＭＭＥＲ

Contextual Info: S27C256F MILITARY 32K x 8 CMOS EPROM FOR M AIN T E N A N C E PU R PO SES ONLY! N O T TO BE USED FOR N E W DESIGNS. SEE W S57C256F FOR N E W DESIGNS! KEY FEATURES • EPI Processing • Fast Access Time — Latch-up Immunity Up to 200 mA — 90 ns Over Full Mil Temp Range

27C256

Abstract: TS27C256Q DIP-28 TS27C256 eprom 27c256 28 PIN DIP 150 NS
Contextual Info: SGS-THOMSON MQ(g[^(Q [ILi(gU[^ R!]D©Ì S27C256Q 256K (32K x 8) CMOS UV ERASABLE PROM • FAST ACCESS TIME: 150ns, 170ns, 200ns, 250ns, 300ns. ■ COMPATIBLE TO HIGH SPEED MICROPROCESSORS ZERO WAIT STATE ■ 28-PIN JEDEC APPROVED PIN-OUT ■ LOW POWER CONSUMPTION:

S 2563

Abstract: 2564 eprom texas
Contextual Info: S27C256 262,144 BIT ERASABLE PROGRAMMABLE READ-ONLY MEMORY SEPTEMBER 1 9 8 4 - Organization . . . 32K x 8 REVISED NOVEMBER 1985 J PACKAGE TOP VIEW! Single 5-V Power Supply 1 U28 27 2 3 26 4 25 24 5 6 23 7 22 21 8 20 A1C 9 AO C 10 19 18 Q IC 1 Q2 Q 12 17

pc 2561

Abstract: S27C256 27PC256NL
Contextual Info: S27C256 262.144-BIT UV ERASABLE PROGRAMMABLE READ-ONLY MEMORY TMS27PC256 262,144-BIT PROGRAMMABLE READ-ONLY MEMORY SEPTEMBER 1 9 8 4 -REVISED MARCH 1988 This Data Sheet is Applicable to A ll S27C256S a nd TMS27PC256s Sym bolized w ith Code " A " as Described on Page 12.

S27C256

Contextual Info: S27C256L Military 32K x 8 CMOS EPROM KEY FEATURES • High Performance CMOS • Ceramic Leadless Chip Carrier CLLCC — 120 ns Access Time • EPI Processing — Latch-Up Immunity to 200 mA • Fast Programming — ESD Protection Exceeds 2000 Volts • DESC SMD No. 5962-86063

5962-8606301XA

Abstract: 5962-90658033C 5962-8765004KA 5962-8961404MXA WS27C512L-12 5962-8751501 5962-8751502LA 5962-8873402LA 59628764801XA WS27C010L-15CMB
Contextual Info: Standard Military Drawing SMD Products Product Number WSI supports the S tandardized M ilitary D rawings (SMD) program sponsored by the Defense Electronics Supply Center (DESC), Dayton, Ohio 45444-5277. Copies of the SMD may be obtained by calling DESC at Tel: (513) 296-6095.

S27C256

Contextual Info: S G S-THOnSON Û7D D I 7 ^ 2 3 7 87D 10547 ' o r u i v D r 'V ^ /^ - S * ? X jS J .C M O ^ ^ ^ ADVANCE INFORMATION The S27C256 is a high speed 2 5 6 K U V erasable and electrically reprogram­ mable EPROM ideally suited for applications where fast turn-around and

tms27pc256

Abstract: cm2 5612 TMS27C256JL S27C256 FML 612
Contextual Info: S27C256 262 144-BIT UV ERASABLE PROGRAMMABLE READ-ONLY MEMORY TMS27PC256 262 144-BIT PROGRAMMABLE READ-ONLY MEMORY REVA SMLS256E - SEPTEMBER 1964 This Data Sheet is Applicable to All S27C256S and TMS27PC256s Symbolized with Code “B" as Described on Page 7-25.

Contextual Info: S27C256L Military 32K x 8 CMOS EPROM KEY FEATURES High Performance CMOS • Ceramic Leadless Chip Carrier CLLCC • EPI Processing — 120 ns Access Time — Latch-Up Immunity to 200 mA • Fast Programming • DESC SMD No. 5962-86063 • 300 Mil DIP or Standard 600 Mil DIP

MSP14LV160

Abstract: MSP54LV100 MCF10P-128MS 70f3350GC 63a52 95f264k HY27US08121B MSP55LV128 MSP55lv512 fujitsu msp55lv512
Contextual Info: ＤＥＶＩＣＥ ＬＩＳＴ ＡＦ９７０８ ＦＬＡＳＨ ＰＲＯＧＲＡＭＭＥＲ ＡＦ９７０９ ＦＬＡＳＨ ＰＲＯＧＲＡＭＭＥＲ ＡＦ９７０９Ｂ ＦＬＡＳＨ ＰＲＯＧＲＡＭＭＥＲ

27C64

Abstract: WS27C128F WS27C64F-90DMB
Contextual Info: WS27C64F MILITARY 8K x 8 CMOS EPROM KEY FEATURES • • EPI Processing Fast A c c e s s Tim e — Latch-U p Immunity U p to 200 m A — 90 ns O ver Full Mil T em p R ange • Standard EPRO M Pinout • Low Power C onsum ption • Military Tem perature Operating

S27C256

Abstract: GI 27c256 s27c256a S27C256-2 27c256-1 TMS27C256 S-27C256 GI 27c256 25 27C250-2
Contextual Info: TEXAS INSTR { ASIC/MEflORY} 77 dF Ö 9 6 1 7 2 5 TEXAS INSÏR ASIC/MEMORY | 0 cibl7SS □ D 4 0 C]2S 4 7TC 40925 S27C256 262,144-BIT ERASABLE PROGRAMMABLE READ-ONLY MEMORY SEPTEM BER 1984 - R EV ISED NOVEMBER 1985 Organization . . . 32K x 8 Single 5-V Power Supply

SMD Capacitor symbols

Abstract: WS27C128F WS27C256F-90 WS27C256F-90CMB WS27C256F-90DMB WS57C256F
Contextual Info: S27C256F MILITARY 32K x 8 CMOS EPROM FOR MAINTENANCE PURPOSES ONLY! NOT TO BE USED FOR NEW DESIGNS. SEE WS57C256F FOR NEW DESIGNS! KEY FEATURES • Fast Access Time • EPI Processing — Latch-up Immunity Up to 200 mA — 90 ns Over Full Mil Temp Range • Low Power Consumption

s27c256

Contextual Info: S27C256 _ 32,768 x 8 CMOS EPROM FEATURES DESCRIPTION • Read access time: 90 ns The ¡SS I S27C256 is a 256 K-bit 32K-word by 8-bit Ultravio­ let Erasable CMOS Programmable Read-Only Memory. It requires only a single 5V power supply in normal read mode

TS27C256-15

Abstract: TS27C256 TS27C256-20 TS27C256-25 TS27C256-30
Contextual Info: 2 6 2 . 1 4 4 - B I T 3 2 . 7 6 8 x 8 C M O S U V E R A S A B L E P R O M M EM ORY CO M PO N EN TS A D V A N C E IN FO R M A T IO N CMOS T h e T S 2 7 C 2 5 6 is a high speed 2 5 6 K U V erasable and e le ctrica lly reprogram ­ m able E P R O M ideally suited for ap p licatio ns w here fast turn -aroun d and

TS21C

Abstract: TS27C256 TS27C256-20 TS27C256-25
Contextual Info: 2 6 2 - 1 4 4 - B I T 3 2 . 7 6 8 x 8 C M O S O N E T I M E P R O G R A M M A B L E - R O M MEMORY COMPONENTS A D V A N C E IN F O R M A T I O N □ T h e T S 2 7 C 2 5 6 P ¡5 a h ig h speed 2 5 6 K b its o ne t im e e le c tr ic a lly p o g ra m m a b lc R O M id e a lly s u ite d f o r a p p lic a tio n s w h e re fa st tu r n - a r o u n d js an

S27C256

Contextual Info: S27C256L Military 32K x 8 CMOS EPROM KEY FEATURES • Ceramic Leadless Chip Carrier CLLCC • High Performance CMOS — 120 ns Access Time • EPI Processing • Fast Programming — Latch-Up Immunity to 200 mA • DESC SMD No. 5962-86063 — ESD Protection Exceeds 2000 Volts