5A JFET Search Results

Contextual Info: SSFP5N20 StarMOST Power MOSFET • Extremely high dv/dt capability ■ Low Gate Charge Qg results in VDSS = 200V Simple Drive Requirement ID25 =5A ■ 100% avalanche tested ■ Gate charge minimized ■ Very low intrinsic capacitances ■ Very good manufacturing repeatability

MAX713 equivalent

Abstract: 48V-to-5V 330uH cd54 max756 MAX726 MAX749 440v ac voltage regulator MAX724 max7135 lcd at-101
Contextual Info: Volume Twelve NEWS BRIEFS Maxim reports record revenues for the fourth quarter 1993 2 IN-DEPTH ARTICLE Fault-tolerant CMOS multiplexers offer "best buy" protection 3 DESIGN SHOWCASE 48V-to-5V dc-dc converter borrows power from phone lines 8 Switch-mode battery charger delivers 5A

transistor CB 945

Abstract: 8508901YX 8508902YX ELH0101 ELH0101AK ELH0101K MIL-I-45208A D3B operational amplifier 10eb2 DCM4 SMD
Contextual Info: Power Operational Amplifier Features General Description  5A peak 2A continuous output current  10 V ms slew rate  300 kHz power bandwidth  850 mW standby power g 15V supplies  300 pA input bias current  Virtually no crossover distortion  2 ms settling time to 0 01%

psp 1004

Contextual Info: HIP0061 HARRIS S E M I C O N D U C T O R 60V, 3.5A, 3-Transistor C o m m o n So urce ESD Protected Po wer M O S F E T Array April 1997 Features Description • T h r e e 3>5A P o w e r M O S N - C h a n n e l T r a n s i s t o r s The HIP0061 is a power MOSFET array that consists of

P-Channel Depletion Mode FET

Abstract: P-Channel Depletion Mosfets P-Channel Depletion Mode Field Effect Transistor P-Channel Depletion mosFET n channel depletion MOSFET N-Channel JFET FETs Siliconix JFET application note list of n channel fet shockley diode p channel depletion mosfet
Contextual Info: AN101 An Introduction to FETs The family tree of FET devices Figure 1 may be divided into two main branches, Junction FETs (JFETs) and Insulated Gate FETs (or MOSFETs, metal-oxidesemiconductor field-effect transistors). Junction FETs are inherently depletion-mode devices, and are available in

P-Channel Depletion Mosfets

Abstract: shockley diode P-Channel Depletion Mode FET shockley diode application shockley diode datasheet n channel depletion MOSFET list of n channel fet jfet idss 10 ma vp -3 diode shockley P-Channel Depletion Mode Field Effect Transistor
Contextual Info: AN101 An Introduction to FETs The family tree of FET devices Figure 1 may be divided into two main branches, Junction FETs (JFETs) and Insulated Gate FETs (or MOSFETs, metal-oxide- semiconductor field-effect transistors). Junction FETs are inherently depletion-mode devices, and are available in

SEMISOUTH

Abstract: 1200v 30A to247 JFETs SiC jfets downhole ASJD1200R045
Contextual Info: ADVANCED INFORMATION Silicon Carbide SiC Schottky Diodes and JFETs Die Inside Why SiC for your Military, Aerospace SiC JFETs • 1200V & 1700V Breakdown Voltages and Down-hole Applications? • Extreme Performance • Operation Beyond Mil Temp - Elevated Temp Range (TJ), -55oC to +200oC

Amplifiers

Abstract: 12v 100w amplifier mosfet 20mhz power piezo amplifier driver -audio input 220v and output 4v power amplifier for sonar sonar 200khz QA451 QA453 alarm sonar
Contextual Info: QA 452 High Voltage Amplifier Rev 1.0 Shortform Datasheet Features: • High Voltage, High Speed Amplifier • JFET Input • High Gain Bandwith Product: 20MHz • Rugged MOSFET output stage • Shutdown w. high impedance output and reduced current consumption

5-pin smd Voltage Regulators

Abstract: RH1499 msk5059 RH1498dice MSK5058 RH1013DICE 5962F0921603 MSK5820 rh1014 MSK5044RH
Contextual Info: SPACE QUALIFIED PRODUCTS RADIATION HARD AMPLIFIERS Part type RH101A RH101ADICE MSK0041RH MSK106RH RH1078M RH1078MDICE RH07 RH07CDICE RH1013M RH1013DICE RH1014M MSK114RH RH108A RH108ADICE RH27AE RH27E RH27C RH27CDICE RH1056A RH1056DICE RH1498M RH1498DICE MSK198RH

ASJD1200R045

Abstract: SiC JFET JFET semisouth silicon carbide JFET SJDP120R045 silicon carbide j-fet SEMISOUTH semisouth JFET VGS15V TO258
Contextual Info: ADVANCE INFORMATION SiC JFET ASJD1200R045 Normally-ON Trench Silicon Carbide Power JFET BVDS FEATURES: ProductSummary 1200 RDS ON max 0.045 V : ETS,typ TBD J Die Inside • Hermetic TO-258 Packaging • 200°C Maximum Operating Temperature (260oC Contact Factory)

SiC JFET

Abstract: JFET semisouth SJDP120R045 5A JFET ASJD1200R045 SEMISOUTH SJDP
Contextual Info: ADVANCED INFORMATION SiC JFET ASJD1200R045 Normally-ON Trench Silicon Carbide Power JFET BVDS FEATURES: ProductSummary 1200 RDS ON max 0.045 V : ETS,typ TBD J Die Inside • Hermetic TO-257 Packaging • 200°C Maximum Operating Temperature (260oC Contact Factory)

Diode 400V 5A

Abstract: lm1083 BZY55C transistor 2n1208 bc109 spice IRF9024 CV7404 mnt6337j sml1258 SML1004RGN
Contextual Info: PRODUCT 2C415 2C425 2C444 2C746 2N1131L 2N1132 2N1132CSM 2N1132DCSM 2N1208 2N1209 2N1482 2N1483 2N1483A 2N1484A 2N1485 2N1485A 2N1486 2N1486A 2N1613 2N1613L 2N1616 2N1617 2N1618 2N1711 2N1717 2N1721 2N1722 2N1724 2N1724A 2N1889 2N1890 2N1893 2N1893CSM 2N1893DCSM

jfet transistor

Abstract: lovoltech PWRLITE-LS201N J-FET TRANSISTOR jfet power transistor LS201N 5A JFET lovoltech no diode
Contextual Info: www.Lovoltech.com PWRLITE-LS201N N-Channel Power JFET Transistor for Notebook Battery Applications Features Applications Description The JFET transistor from Lovoltech is an ideal switch for battery operated products. The device presents a Low Rdson allowing for

Contextual Info: • R r M APT6017WVR A d va n ced po w er Te c h n o l o g y 0.1 7a 600v 31 .sa POWER MOS V' Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®

Motorola transistor smd marking codes

Abstract: SMD TRANSISTOR MARKING 5c SMD code smd TRANSISTOR code marking 2F toshiba smd marking code transistor TRANSISTOR SMD MARKING CODE 1P smd transistor 5c Diode SOT-23 marking 15d SMD TRANSISTOR MARKING 6B TRANSISTOR SMD MARKING CODE 1d
Contextual Info: Eugene Turuta 2 - pins SOT - 89 databook 3 - pins Acti ve Activ SMD components mar king codes marking Introduction SMD-codes for semiconductor components in 3-pins cases SMD-codes for semiconductor components in SOT-89 cases SMD-codes for semiconductor components in BGA and LPP cases

npd5564

Abstract: 2N4393 MOTOROLA 2sk194 2sk162 KE4393 2SK146 2sk162 hitachi 2SK147 NPD5566 FET package TO-71
Contextual Info: JUNCTION FET Item Number Part Number Manufacturer V BR GSS IDSS (V) (A) g,. VGS(Off) Min (S) Max Max (V) lass Max (A) Clsa Max (F) PD Max (W) Derate at (WrC) Toper Max (OC) Package Style N-Channel JFETs, (Cont'd) 5 10 2SK364 2SK366 2SK240 2SK431 2SK170 UC704

APT1201R5BVFR

Abstract: APT1201R5SVFR
Contextual Info: APT1201R5BVFR APT1201R5SVFR 1.500Ω Ω 1200V 10A POWER MOS V TO-247 Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®

SEMISOUTH

Abstract: JFET semisouth SiC JFET semisouth JFET SJDP120R085
Contextual Info: ADVANCED INFORMATION SiC JFET ASJD1200R085 Normally-ON Trench Silicon Carbide Power JFET BVDS FEATURES: ProductSummary 1200 RDS ON max 0.085 V : ETS,typ TBD J Die Inside • Hermetic TO-257 Packaging • 200°C Maximum Operating Temperature (260oC Contact Factory)

APT1201R5BFVR

Abstract: APT1201R5BVFR APT1201R5SFVR
Contextual Info: APT1201R5BFVR APT1201R5SFVR 1.500Ω Ω 1200V 10A POWER MOS V TO-247 Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®

Contextual Info: APT1201R5BVFR APT1201R5SVFR 1.500Ω Ω 1200V 10A POWER MOS V TO-247 Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®

muA741

Abstract: 220v ac to 12V 10A SMPS 220V 5A Automatic Voltage Regulator 220V Automatic Voltage Regulator operational amplifier LM234 ac 220V Automatic Voltage Regulator three terminal adjustable voltage regulator LM723 sgs lm723 LM318 regulator lm 471
Contextual Info: ALPHANUMERICAL INDEX Type Number Page Number Function AVS08 Automatic Mains Selector 110/220V AC for SMPS <200W . . . . 57 AVS10 Automatic Mains Selector (110/220V AC) for SMPS <300W . . . . 63 AVS12 Automatic Mains Selector (110/220V AC) for SMPS <500W . . . .

IEGT 4500V

Abstract: IEGT trench static characteristics of mosfet and igbt mitsubishi igbt cm
Contextual Info: Characteristics of a 1200V CSTBT Optimized for Industrial Applications Yoshifumi Tomomatsu*, Shigeru Kusunoki*, Katsumi Satoh*, Junji Yamada*, Yoshiharu Yu*, John F. Donlon*, Hideo Iwamoto*, Eric R. Motto* *Fukuryo Semicon Engineering Corporation, Fukuoka, Japan

JFET semisouth

Abstract: SEMISOUTH SiC JFET
Contextual Info: ADVANCED INFORMATION SiC JFET ASJE1200R100 Normally-OFF Trench Silicon Carbide Power JFET BVDS FEATURES: RDS ON max 0.100 V : ETS,typ 170 J Die Inside • Hermetic TO-257 Packaging • 200°C Maximum Operating Temperature (for 260oC Contact Factory) • Available Screening:

ASJD1200R085

Abstract: SiC JFET SJDP120R085 JFET semisouth SEMISOUTH silicon carbide j-fet SJDP silicon carbide JFET JFET semisouth Semisouth, SJDP120R085
Contextual Info: ADVANCE INFORMATION SiC JFET ASJD1200R085 Normally-ON Trench Silicon Carbide Power JFET BVDS FEATURES: ProductSummary 1200 RDS ON max 0.085 V : ETS,typ TBD J Die Inside • Hermetic TO-258 Packaging • 200°C Maximum Operating Temperature (260oC Contact Factory)