2SK364 Search Results

930 18a diode smd

Abstract: 930 18a 2SK3641 930 diode smd
Contextual Info: IC MOSFET SMD Type MOS Field Effect Transistor 2SK3641 TO-252 Features +0.15 1.50-0.15 +0.15 6.50-0.15 +0.2 5.30-0.2 Unit: mm +0.1 2.30-0.1 +0.8 0.50-0.7 +0.1 0.80-0.1 Low Ciss: Ciss = 930 pF TYP. 2.3 +0.1 0.60-0.1 0.127 max 3.80 +0.15 5.55-0.15 MAX. VGS = 4.5 V, ID = 15 A

Contextual Info: Transistors IC SMD Type Product specification 2SK3643 TO-252 Features +0.15 1.50-0.15 +0.15 6.50-0.15 +0.2 5.30-0.2 Unit: mm +0.1 2.30-0.1 +0.8 0.50-0.7 +0.1 0.80-0.1 Low Ciss: Ciss = 2400pF TYP. 2.3 +0.1 0.60-0.1 0.127 max 3.80 +0.15 5.55-0.15 MAX. VGS = 4.5 V, ID = 32 A

2SK364

Abstract: TOSHIBA 2SK364 2SJ104 Toshiba 2SJ
Contextual Info: 2SK364 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK364 For Audio Amplifier, Analog Switch, Constant Current and Impedance Converter Applications • Unit: mm High breakdown voltage: VGDS = −40 V • High input impedance: IGSS = −1.0 nA max (VGS = −30 V)

2SK364

Abstract: 2SJ104
Contextual Info: 2SK364 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK364 For Audio Amplifier, Analog Switch, Constant Current and Impedance Converter Applications • Unit: mm High breakdown voltage: VGDS = −40 V · High input impedance: IGSS = −1.0 nA max (VGS = −30 V)

Contextual Info: TOSHIBA 2SK364 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE Unit in mm FOR AUDIO AMPLIFIER, ANALOG SWITCH, CONSTANT CURRENT AND 5.1 MAX. IMPEDANCE CONVERTER APPLICATIONS • High Breakdown Voltage • High Input Impedance : V q d § = —40V

Contextual Info: Transistors IC SMD Type Product specification 2SK3640 TO-252 Features +0.15 1.50-0.15 +0.15 6.50-0.15 +0.2 5.30-0.2 Unit: mm +0.1 2.30-0.1 +0.8 0.50-0.7 Built-in gate protection diode 2.3 +0.1 0.60-0.1 0.127 max 3.80 +0.15 5.55-0.15 +0.1 0.80-0.1 Low Ciss: Ciss = 570 pF TYP.

2SK3641

Abstract: 2SK3641-ZK
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3641 SWITCHING N-CHANNEL POWER MOS FET ORDERING INFORMATION DESCRIPTION The 2SK3641 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and PART NUMBER PACKAGE

2SK3643-ZK

Abstract: 2SK3643
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3643 SWITCHING N-CHANNEL POWER MOS FET ORDERING INFORMATION DESCRIPTION The 2SK3643 is N-channel MOS FET device that features a low on-state resistance and excellent switching PART NUMBER PACKAGE 2SK3643-ZK TO-252 MP-3ZK

2SK3643

Contextual Info: IC MOSFET SMD Type MOS Field Effect Transistor 2SK3643 TO-252 Features +0.15 1.50-0.15 +0.15 6.50-0.15 +0.2 5.30-0.2 Unit: mm +0.1 2.30-0.1 +0.8 0.50-0.7 +0.1 0.80-0.1 Low Ciss: Ciss = 2400pF TYP. 2.3 +0.1 0.60-0.1 0.127 max 3.80 +0.15 5.55-0.15 MAX. VGS = 4.5 V, ID = 32 A

2SK3645-01MR equivalent

Contextual Info: 2SK3645-01MR FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings mm Features TO-220F High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply)

2SK3648

Abstract: 2sk3648 equivalent 48v 50a power supply L228
Contextual Info: 2SK3648-01 200304 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings [mm] TO-220AB Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS Uninterruptible Power Supply

smd+1PW

Abstract: smd 1PW
Contextual Info: Transistors IC SMD Type MOS Field Effect Transistor 2SK3640 TO-252 Features +0.15 1.50-0.15 +0.15 6.50-0.15 +0.2 5.30-0.2 Unit: mm +0.1 2.30-0.1 +0.8 0.50-0.7 Built-in gate protection diode 2.3 +0.1 0.60-0.1 +0.15 4.60-0.15 0.127 max 3.80 +0.15 5.55-0.15 +0.1

power supply 100v 30a schematic

Abstract: Sj 33 diode
Contextual Info: 2SK3646-01L,S,SJ FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings mm Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof P4 Applications Switching regulators UPS (Uninterruptible Power Supply)

Contextual Info: 2SK3649-01MR 200304 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings [mm] TO-220F Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators

Contextual Info: T O SH IB A 2SK364 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE 2SK364 FOR AUDIO AMPLIFIER, ANALOG SWITCH, CONSTANT CURRENT AND Unit in mm .5.1 MAX. IMPEDANCE CONVERTER APPLICATIONS • High Breakdown Voltage : V q d s = —40V • High Input Impedance

Sj 47 diode

Abstract: power supply 100v 30a schematic
Contextual Info: 2SK3646-01L,S,SJ 200304 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings mm Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof P4 Applications Switching regulators UPS (Uninterruptible Power Supply)

Contextual Info: 2SK3647-01 200304 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings mm Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply)

Contextual Info: 2SK364 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK364 For Audio Amplifier, Analog Switch, Constant Current and Impedance Converter Applications • Unit: mm High breakdown voltage: VGDS = −40 V • High input impedance: IGSS = −1.0 nA max (VGS = −30 V)

2SK364

Abstract: Toshiba 2SJ
Contextual Info: 2SK364 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK364 For Audio Amplifier, Analog Switch, Constant Current and Impedance Converter Applications • Unit: mm High breakdown voltage: VGDS = −40 V • High input impedance: IGSS = −1.0 nA max (VGS = −30 V)

npd5564

Abstract: 2N4393 MOTOROLA 2sk194 2sk162 KE4393 2SK146 2sk162 hitachi 2SK147 NPD5566 FET package TO-71
Contextual Info: JUNCTION FET Item Number Part Number Manufacturer V BR GSS IDSS (V) (A) g,. VGS(Off) Min (S) Max Max (V) lass Max (A) Clsa Max (F) PD Max (W) Derate at (WrC) Toper Max (OC) Package Style N-Channel JFETs, (Cont'd) 5 10 2SK364 2SK366 2SK240 2SK431 2SK170 UC704

2sk170 FET

Abstract: Junction-FET fet to92 2SK364 2SK118 2sk117 2SJ74 2sk879 2sj105 2SJ14
Contextual Info: Part Number 2SK246 Nch 2SJ103 Pch 2SK117 Nch 2SK362 Nch 2SK363 Nch 2SK364 Nch 2SJ104 Pch 2SK30ATM 2SK170 Nch 2SJ74 Pch 2SK369 Nch 2SK373 Nch 2SK330 Nch 2SJ105 Pch 2SK184 Nch 2SK365 Nch 2SK372 Nch 2SK366 Nch 2SJ107 Pch 2SK118 Nch 2SK370 Nch 2SJ108 Pch 2SK371 Nch

2SK3643

Abstract: 2SK3643-ZK
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3643 SWITCHING N-CHANNEL POWER MOS FET ORDERING INFORMATION DESCRIPTION The 2SK3643 is N-channel MOS FET device that features a low on-state resistance and excellent switching PART NUMBER PACKAGE 2SK3643-ZK TO-252 MP-3ZK

sd 431 transistor

Abstract: 2SK3641 2SK3641-ZK gs 431 transistor
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3641 SWITCHING N-CHANNEL POWER MOS FET ORDERING INFORMATION DESCRIPTION The 2SK3641 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and PART NUMBER PACKAGE

Contextual Info: Transistors IC SMD Type Product specification 2SK3641 TO-252 Features +0.15 1.50-0.15 +0.15 6.50-0.15 +0.2 5.30-0.2 Unit: mm +0.1 2.30-0.1 +0.8 0.50-0.7 +0.1 0.80-0.1 Low Ciss: Ciss = 930 pF TYP. 2.3 +0.1 0.60-0.1 0.127 max 3.80 +0.15 5.55-0.15 MAX. VGS = 4.5 V, ID = 15 A