5A SOT23 Search Results

ZXGD3003E6

Abstract: ZXGD3003 ZXGD3003E6TA ZETEX GATE DRIVER design ideas igbt display plasma sot23 6 device Marking TS16949
Contextual Info: ZXGD3003E6 5A peak gate driver in SOT23-6 General description The ZXGD3003E6 is a high-speed non-inverting single MOSFET gate driver capable of driving up to 5A into a MOSFET or IGBT gate capacitive load from supply voltages up to 40V. With typical propagation

Contextual Info: ZXGD3003E6 5A peak gate driver in SOT23-6 General description The ZXGD3003E6 is a high-speed non-inverting single MOSFET gate driver capable of driving up to 5A into a MOSFET or IGBT gate capacitive load from supply voltages up to 40V. With typical propagation

STT5NF20V

Contextual Info: STT5NF20V N-CHANNEL 20V - 0.030 Ω - 5A SOT23-6L 2.7V-DRIVE STripFET II POWER MOSFET • ■ ■ ■ TYPE VDSS RDS on ID STT5NF20V 20 V < 0.040 Ω ( @ 4.5 V ) < 0.045 Ω ( @ 2.7 V ) 5A TYPICAL RDS(on) = 0.030 Ω @ 4.5 V TYPICAL RDS(on) = 0.037 Ω @ 2.7 V

STT5NF20V

Contextual Info: STT5NF20V N-CHANNEL 20V - 0.030 Ω - 5A SOT23-6L 2.7V-DRIVE STripFET II POWER MOSFET • ■ ■ ■ TYPE VDSS RDS on ID STT5NF20V 20 V < 0.040 Ω ( @ 4.5 V ) < 0.045 Ω ( @ 2.7 V ) 5A TYPICAL RDS(on) = 0.030 Ω @ 4.5 V TYPICAL RDS(on) = 0.037 Ω @ 2.7 V

stt2 mosfet

Abstract: STT2
Contextual Info: STT5NF20V N-CHANNEL 20V - 0.030Ω - 5A SOT23-6L 2.5V-DRIVE STripFET II POWER MOSFET PRELIMINARY DATA TYPE STT5NF20V • ■ ■ ■ VDSS R DS on ID 20 V <0.035Ω (@4.5V) <0.045Ω (@2.5V) 5A TYPICAL RDS(on) = 0.030Ω (@4.5V) TYPICAL RDS(on) = 0.037Ω (@2.5V)

Contextual Info: LESHAN RADIO COMPANY, LTD. Switching Diode z Pb-Free Package is Available. LMBD6050LT1G Ordering Information Device Marking Shipping LMBD6050LT1G 5A 3000/Tape&Reel LMBD6050LT3G 5A 10000/Tape&Reel 3 1 2 MAXIMUM RATINGS Rating Reverse Voltage Forward Current

5A SOT23

Abstract: STT5NF20V
Contextual Info: STT5NF20V N-CHANNEL 20V - 0.030 Ω - 5A SOT23-6L 2.7V-DRIVE STripFET II POWER MOSFET • ■ ■ ■ TYPE VDSS RDS on ID STT5NF20V 20 V < 0.040 Ω ( @ 4.5 V ) < 0.045 Ω ( @ 2.7 V ) 5A TYPICAL RDS(on) = 0.030 Ω @ 4.5 V TYPICAL RDS(on) = 0.037 Ω @ 2.7 V

STT5PF20V

Abstract: ON TSOP-6 MARKING 6L ON TSOP6 MARKING 6L
Contextual Info: STT5PF20V P-CHANNEL 20V - 0.065Ω - 5A SOT23-6L 2.5V-DRIVE STripFET II POWER MOSFET TYPE STT5PF20V • ■ ■ ■ VDSS RDS on ID 20 V < 0.080 Ω (@4.5V) < 0.10 Ω (@2.5V) 5A TYPICAL RDS(on) = 0.065Ω (@4.5V) TYPICAL RDS(on) = 0.085Ω (@2.5V) ULTRA LOW THRESHOLD GATE DRIVE (2.5V)

Contextual Info: STT5PF20V P-CHANNEL 20V - 0.065Ω - 5A SOT23-6L 2.5V-DRIVE STripFET II POWER MOSFET TYPE STT5PF20V • ■ ■ ■ VDSS RDS on ID 20 V < 0.080 Ω (@4.5V) < 0.10 Ω (@2.5V) 5A TYPICAL RDS(on) = 0.065Ω (@4.5V) TYPICAL RDS(on) = 0.085Ω (@2.5V) ULTRA LOW THRESHOLD GATE DRIVE (2.5V)

LMBD6050LT1

Contextual Info: LESHAN RADIO COMPANY, LTD. Switching Diode FETURE LMBD6050LT1G z We declare that the material of product compliance with RoHS requirements. 3 Ordering Information 1 Device Marking Shipping LMBD6050LT1G 5A 3000/Tape&Reel LMBD6050LT3G 5A 10000/Tape&Reel 2 CASE

15v 5a dc boost

Abstract: LTC3418 LTspice LT3080 LTC3549 buck 10a dc dc sepic 24V converter 2A 12v Low Dropout Regulator 10A Adjustable High Efficiency Step-Down Switching Regulator 24v to 5v 1A switching regulator
Contextual Info: Power Management Solutions for Actel’s FPGAs IGLOO Core Voltage: 1.2V b200mA b500mA b1A – 1.5A b2A – 5A 5A – 10A Up to 25A 1.8V LT1761 Linear LTC3035 Linear LTC3549 Buck LT1965 Linear LT3080 Linear LT1763 Linear LTC3409 Buck LT1965 Linear LT3080 Linear

lmdl6050

Contextual Info: LESHAN RADIO COMPANY, LTD. Switching Diode Featrues LMDL6050T1G z Pb-Free Package is Available. Ordering Information Device Marking LMDL6050T1G 5A LMDL6050T3G Shipping 1 3000/Tape&Reel 10000/Tape&Reel 5A 2 1 CATHODE 2 ANODE CASE 477–02, STYLE 1 SOD-323 MAXIMUM RATINGS

LTC4358

Abstract: LTC4252-2A LTC4358CFE MARKING TRANSISTOR BD RC marking g02 tssop FE16 n channel mosfet marking Bc B530C LTC4358C LTC4358CDE
Contextual Info: LTC4358 5A Ideal Diode FEATURES DESCRIPTION n The LTC 4358 is a 5A ideal diode that uses an internal 20mΩ N-channel MOSFET to replace a Schottky diode when used in diode-OR and high current diode applications. The LTC4358 reduces power consumption, heat

LT1735

Abstract: LT1084-5 LT1085-5 LT1083-5 LT1083-12 LT1084-12 12V LT1084 12v Triad F-269U scr preregulator LT1085-12
Contextual Info: LT1083/LT1084/LT1085 Fixed 3A, 5A, 7.5A Low Dropout Positive Fixed Regulators U FEATURES • ■ ■ ■ ■ ■ ■ ■ DESCRIPTIO Three-Terminal 3.3V, 3.6V, 5V and 12V Output Current of 3A, 5A or 7.5A Operates Down to 1V Dropout Guaranteed Dropout Voltage at Multiple Current Levels

LT1083 Fixed

Contextual Info: LT1083/LT1084/LT1085 Fixed 3A, 5A, 7.5A Low Dropout Positive Fixed Regulators FEATURES • ■ ■ ■ ■ ■ ■ U ■ DESCRIPTIO Three-Terminal 3.3V, 3.6V, 5V and 12V Output Current of 3A, 5A or 7.5A Operates Down to 1V Dropout Guaranteed Dropout Voltage at Multiple Current Levels

DFN16

Abstract: current limit switch 12V LIMITING INRUSH CURRENT mosfet LTC4218 QFN-32 footprint LTC4210 LTC4210-1 LTC4210-2 LTC4215 LTC4223
Contextual Info: Low Voltage Hot Swap Controllers LTC4219: 5A Hot Swap Controller with Integrated MOSFET and RSENSE n n n n n n n n n Small Footprint 33mΩ MOSFET with RSENSE Available in Preset 12V and 5V Versions Adjustable, 10% Accurate 5A Current Limit Current and Temperature Monitor Outputs

Contextual Info: LTC4358 5A Ideal Diode FEATURES n n n n n n n DESCRIPTION The LTC 4358 is a 5A ideal diode that uses an internal 20mΩ N-channel MOSFET to replace a Schottky diode when used in diode-OR and high current diode applications. The LTC4358 reduces power consumption, heat

Contextual Info: “SuperSOT” SOT23 NPN SILICON POWER DARLINGTON TRANSISTOR FMMT634 ISSUE 1 – APRIL 97 FEATURES * 625mW POWER DISSIPATION * Highest current capability SOT23 Darlington * Very high hFE - specified at 2A 5K minimum - typically 600 at 5A COMPLEMENTARY TYPE – FMMT734

FMMT634

Abstract: IC 1A datasheet darlington sot23 npn transistor Ic 1A datasheet transistor Ic 1A datasheet NPN FMMT734 DSA003701
Contextual Info: “SuperSOT” SOT23 NPN SILICON POWER DARLINGTON TRANSISTOR FMMT634 ISSUE 1 – APRIL 97 FEATURES * 625mW POWER DISSIPATION * Highest current capability SOT23 Darlington * Very high hFE - specified at 2A 5K minimum - typically 600 at 5A COMPLEMENTARY TYPE – FMMT734

Contextual Info: ZXTP2025F 50V, SOT23, PNP medium power transistor Summary V BR CEO > -50V IC(cont) = -5A RCE(sat) = 30m⍀ typical VCE(sat) < - 60mV @ -1A PD = 1.2W Complementary part number: ZXTN2031F Description Advanced process capability and package design have been used to

ZXTP2025

Abstract: zxtp2025f marking 12W SOT23 zxtp2025fta marking 312 SOT23 zetex ZXTN2031F ZXTN2031 mosfet marking 12W 12W MARKING sot23
Contextual Info: ZXTP2025F 50V, SOT23, PNP medium power transistor Summary V BR CEO > -50V IC(cont) = -5A RCE(sat) = 30m⍀ typical VCE(sat) < - 60mV @ -1A PD = 1.2W Complementary part number: ZXTN2031F Description Advanced process capability and package design have been used to

TRANSISTOR MARKING 1d7

Abstract: TS16949 ZXTN19020CFF ZXTP19020CFF ZXTP19020CFFTA zetex 749
Contextual Info: ZXTP19020CFF 20V, SOT23F, PNP medium power transistor Summary: BVCEO > -20V BVECO > -5V IC cont = -5A VCE(sat) < 40mV @ 100mA RCE(sat) = 21m⍀ PD = 1.5W Complementary part number ZXTN19020CFF Description C Advanced process capability has been used to maximize the

Contextual Info: ZXTP19020CFF 20V, SOT23F, PNP medium power transistor Summary: BVCEO > -20V BVECO > -5V IC cont = -5A VCE(sat) < 40mV @ 100mA RCE(sat) = 21m⍀ PD = 1.5W Complementary part number ZXTN19020CFF Description C Advanced process capability has been used to maximize the

Contextual Info: A Product Line of Diodes Incorporated FMMT634 100V NPN DARLINGTON TRANSISTOR IN SOT23 Features Mechanical Data •           BVCEO > 100V IC = 900mA high Continuous Collector Current ICM = 5A Peak Pulse Current 625mW Power dissipation