STT2 Search Results

stu9nc80zi

Abstract: STL5NK65Z stp3nc90zfp STB45NF06 dpak DIODE IRF640 morocco STS3DPFS45 IRF540 complementary STGB10NB37LZ STP14NK50Z
Contextual Info: MOSFETs & IGBTs Progress in Power Switching Selection Guide STM i c r o e l e c t r o n i c s More Intelligent Solutions VDss V RDS(on) @ 10V (Ω) P/N ID(cont) (A) RDS(on) @ 4.5V (Ω) Qg @ 10V(Typ) (nC) -60 -30 -20 30 100 0.27 0.165 0.155 0.065 0.8 STT2PF60L

Contextual Info: STT2629S -1.5A , -100V , RDS ON 550 mΩ Ω P-Channel Enhancement Mode MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen and lead-free DESCRIPTION TSOP-6 STT2629S utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely

Contextual Info: STT2622 520mA, 50V,RDS ON 1.8Ω Elektronische Bauelemente N-Channel Enhancement Mode Power Mos.FET Description The STT2622 utiltzed advance processing techniques to achieve the lowest possible on-resistance, extermely efficient and cost-effectiveness device.

2A SOT23

Abstract: stp6
Contextual Info: STT2PF60L P-CHANNEL 60V - 0.20 Ω - 2A SOT23-6L STripFET II POWER MOSFET PRELIMINARY DATA • ■ ■ TYPE VDSS R DS on ID STT2PF60L 60 V <0.25 Ω 2A TYPICAL RDS(on) = 0.20 Ω STANDARD OUTLINE FOR EASY AUTOMATED SURFACE MOUNT ASSEMBLY LOW THRESHOLD DRIVE

Contextual Info: STT2623 -2A, -30V,RDS ON 170mΩ Elektronische Bauelemente P-Channel Enhancement Mode Power Mos.FET RoHS Compliant Product Description The STT2623 utiltzed advance processing techniques to achieve the lowest possible on-resistance, extermely efficient and cost-effectiveness device.

stp6

Contextual Info: STT2PF60L P-CHANNEL 60V - 0.20Ω - 2A - SOT-23-6L STripFET II Power MOSFET General features Type VDSS RDS on ID 60V < 0.25Ω 2A ) s ( t c u d o ) r s Description ( P t c e t u e d l o o r s P b Internal schematic diagram e O t e l ) o s ( s t b c Applications

STT2PF60L

Contextual Info: STT2PF60L P-CHANNEL 60V - 0.20 Ω - 2A SOT23-6L STripFET II POWER MOSFET PRELIMINARY DATA • ■ ■ TYPE VDSS RDS on ID STT2PF60L 60 V <0.25 Ω 2A TYPICAL RDS(on) = 0.20 Ω STANDARD OUTLINE FOR EASY AUTOMATED SURFACE MOUNT ASSEMBLY LOW THRESHOLD DRIVE

STT200GK08

Abstract: bridge rectifier 6V dc STT200 STT200GK12 STT200GK14 thyristor phase control rectifier
Contextual Info: STT200 Thyristor-Thyristor Modules Dimensions in mm 1mm=0.0394" Type STT200GK08 STT200GK12 STT200GK14 STT200GK16 STT200GK18 Symbol VRSM VDSM V 900 1300 1500 1700 1900 Test Conditions ITRMS, IFRMS TVJ=TVJM ITAVM, IFAVM TC=85oC; 180o sine VRRM VDRM V 800 1200

JESD97

Abstract: STT2PF60L drive motor 60v with transistor P channel MOSFET marking code 10 sot23 o811 stp6
Contextual Info: STT2PF60L P-CHANNEL 60V - 0.20Ω - 2A - SOT-23-6L STripFET II Power MOSFET General features Type VDSS RDS on ID STT2PF60L 60V < 0.25Ω 2A • Standard outline for easy automated surface mount assembly ■ Low threshlod drive SOT23-6L Description This Power MOSFET is the latest development of

Contextual Info: STT2605 -4.0A, -30V,RDS ON 80mΩ Elektronische Bauelemente P-Channel Enhancement Mode Power Mos.FET RoHS Compliant Product Description The STT2605 utiltzed advance processing techniques to achieve the lowest possible on-resistance, extermely efficient and cost-effectiveness device.

M5 DIODE 22-35

Abstract: thyristor datasheet STT27 STT27GK08 STT27GK12 STT27GK14 SIMPLE motor dc 6v thyristor 25A stt27gk16
Contextual Info: STT27 Thyristor-Thyristor Modules Dimensions in mm 1mm=0.0394" Type STT27GK08 STT27GK12 STT27GK14 STT27GK16 STT27GK18 Symbol VRSM VDSM V 900 1300 1500 1700 1900 Test Conditions ITRMS, IFRMS TVJ=TVJM ITAVM, IFAVM TC=85oC; 180o sine VRRM VDRM V 800 1200 1400

STT22083PYG

Abstract: FERRAZ SHAWMUT ferraz STT24803PYG Ferraz Shawmut SPD STT248 data sheet Ferraz
Contextual Info: Surge-Trap Type 1 SPD Three Phase Wye - Data Sheet Application Fail-Safe For NEMA Type 2 Applications & Systems STT22083PYG, STT24803PYG, STT26003PYG Cost Effective Essential Type 1 SPD for indoor applications. TPMOV Technology ® Ferraz Shawmut’s Surge-Trap® Type 1 SPD is a

STT2240SPG

Abstract: STT21201PG ferraz Ferraz Shawmut
Contextual Info: Surge-Trap Type 1 SPD Single Phase - Data Sheet Application Fail-Safe For NEMA Type 2 Applications & Systems STT21201PG, STT2240SPG, STT22401PG Cost Effective Essential Type 1 SPD for indoor applications. TPMOV Technology ® Ferraz Shawmut’s Surge-Trap® Type 1 SPD is a

STP6

Abstract: STT2PF60L JESD97 MAX4434
Contextual Info: STT2PF60L P-CHANNEL 60V - 0.20Ω - 2A - SOT-23-6L STripFET II Power MOSFET General features Type VDSS RDS on ID STT2PF60L 60V < 0.25Ω 2A • Standard outline for easy automated surface mount assembly ■ Low threshlod drive SOT23-6L Description This Power MOSFET is the latest development of

STT27GK16B

Contextual Info: STT27GKxxB Thyristor-Thyristor Modules Type STT27GK08B STT27GK12B STT27GK14B STT27GK16B STT27GK18B Symbol VRSM VDSM V 900 1300 1500 1700 1900 Test Conditions ITRMS, IFRMS TVJ=TVJM ITAVM, IFAVM TC=85oC; 180o sine VRRM VDRM V 800 1200 1400 1600 1800 Tolerance:+0.5mm

Contextual Info: STT2603 -5A, -20V,RDS ON 65m Ω Elektronische Bauelemente P-Channel Enhancement Mode Power Mos.FET RoHS Compliant Product Description The STT2603 utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device.

Contextual Info: STT2602 6.3A, 20V,RDS ON 34mΩ Elektronische Bauelemente N-Channel Enhancement Mode Power Mos.FET RoHS Compliant Product Description The STT2602 utiltzed advance processing techniques to achieve the lowest possible on-resistance, extermely efficient and cost-effectiveness device.

Contextual Info: STT2625 -2.3A, -30V,RDS ON 135mΩ Elektronische Bauelemente P-Channel Enhancement Mode Power Mos.FET RoHS Compliant Product Description The STT2625 utiltzed advance processing techniques to achieve the lowest possible on-resistance, extermely efficient and cost-effectiveness device.

STT250

Abstract: b1140 EN2I-6061 stt25 STT3000 B-1140 STT150 STT-15
Contextual Info: STT 3000 Series STT250 / 150 SURGE PROTECTION DEVICE Honeywell Part Number : 46188660-001 EN2I-6061 07/00 PRODUCT SPECIFICATION SHEET Introduction This device is designed to give the Smart Temperature Transmitter maximum protection against surges such as those generated by

FERRAZ SHAWMUT

Abstract: spd 550 ferraz STT22403PDG Ferraz Shawmut SPD STT24803PDG ferra
Contextual Info: Surge-Trap Type 1 SPD Three Phase Delta - Data Sheet Application Fail-Safe For NEMA Type 2 Applications & Systems STT22403PDG, STT24803PDG Cost Effective Essential Type 1 SPD for indoor applications. TPMOV Technology ® Ferraz Shawmut’s Surge-Trap® Type 1 SPD is a

Contextual Info: STT2654 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)80 V(BR)CBO (V)100 I(C) Max. (A)7.5 Absolute Max. Power Diss. (W)75 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)1.0ux @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

Contextual Info: STT200GK Thyristor-Thyristor Modules Dimensions in mm 1mm=0.0394" Type STT200GK08 STT200GK12 STT200GK14 STT200GK16 STT200GK18 Symbol VRSM VDSM V 900 1300 1500 1700 1900 Test Conditions ITRMS, IFRMS TVJ=TVJM ITAVM, IFAVM TC=85oC; 180o sine VRRM VDRM V 800

STT2604

Contextual Info: STT2604 5.5A, 30V,RDS ON 45mΩ Elektronische Bauelemente N-Channel Enhancement Mode Power Mos.FET RoHS Compliant Product Description The STT2604 utiltzed advance processing techniques to achieve the lowest possible on-resistance, extermely efficient and cost-effectiveness device.

MCL T1-1

Abstract: MAB8048 PCF84C12 PCF84C121 PCF84C121P PCF84C121T S020
Contextual Info: D EV ELO P M EN T DATA 34E m This data sheet contains advance information and specifications are subject to change without notice. _ 711Dfl2b 0011455 S I | PCF84C121 PHILIPS INT ER NATIONAL _ SINGLE-CHIP 8-BIT M ICROCONTROLLER WITH 8 B Y T E S EEPROM