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Apex Tool Group, LLC 5B4220538 ELECTRONIC COMPONENT
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5B42205 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
dv2810 Abstract: dv2810s 176/transistor WW 179 593 PH 275 v Stackpole 57 Contextual Info: 5642205 M /A -C O M P H I I N 0 ^ 1 F \| 5b42205 0000440 DV2810S n W T ~ 0 1 ' — 1 n-channel enhancement-mode RF Power FETs designed for. HF/VHF Amplifiers Class A, B, or C High Dynamic Range Amp Benefits 175MHz 20"?ow 10dB Absolute Maximum Ratings 25°o	OCR Scan	St4250S aDDD44[ DV2810S 175MHz Cto150Â dv2810 176/transistor WW 179 593 PH 275 v Stackpole 57	PDF
SEMCO Abstract: arco capacitors 422 arco capacitors DU1215S arco TRIMMER capacitor Contextual Info: _ S 6 4 2 2 0 S M/A-COM P H I M/A-COM P H I I NC_ INC ÛS dF 05D 0 0 4 2 2 O T - ; ? - ^ \| 5b42205 GQGDMaa fl N-CHANNEL RF POWER MOSFET DU1215S ^ M / A -C O M PHI, INC. FEATURES • UNIQUE NEW MOSFET STRUCTURE ■ LOWER CAPACITANCES FOR BROADBAND OPERATION	OCR Scan	s64220s DU1215S 0-j15 Sb45EDS SEMCO arco capacitors 422 arco capacitors DU1215S arco TRIMMER capacitor	PDF
PHA2230 Contextual Info: Afii Bipolar Pulsed Power Module PHA2230-18S 18 Watts, 2.20-3.00 GHz, 2 [is Pulse, 10% Duty Features Outline Drawing • Designed for Radar and EW Applications • Input and Output Matched to 50Q • Class C Pulse Operation Absolute Maximum Ratings at 25°C	OCR Scan	PHA2230-18S PHA2230 5b42205	PDF
m21 sot23 diode Abstract: sot-23 m21 sot23 m21 diode cross reference M21 sot23 MA47110 pin diode cross reference MMCOM MA4P274ST287 MA4P277CK-287 Contextual Info: SMPP Series M/A-COM Surface Mount Plastic PIN Diodes Features • • • • • • • • Package Outlines Surface Mount Package Low Capacitance Diodes Low Loss Switch Diodes Low Distortion Attenuator Diodes Lowest IRin Industry Fast Switching Diodes Single and Dual Diode Configurations	OCR Scan	MA4P275 MA4P789 MA4P277 MA4P278 366-Z266, m21 sot23 diode sot-23 m21 sot23 m21 diode cross reference M21 sot23 MA47110 pin diode cross reference MMCOM MA4P274ST287 MA4P277CK-287	PDF
MA47221 Contextual Info: Afocm M an A M P com pany Stripline PIN Diode Switch Modules MA47200 Series Features • • • • • • Broadband 50 Ohm Designs Through X Band Circuit Characterized High Power Capacity Voltage Ratings to 1000 Volts Fast Switching Speed to 10 Nanoseconds	OCR Scan	MA47200 5b422D5 MA47221	PDF
sot23 a4p Abstract: diode cross reference Microwave PIN diode MA4P a4p sot-23 MA4p series pin diode cross reference 274c ma4p Contextual Info: A f o c m M a n A M P com pany Surface Mount PIN Diodes MA4P Series V 2.00 Features • • • • • • • SOT-23 Surface Mount Package Low Capacitance Diodes Low Loss Switch Diodes Low Distortion Attenuator Diodes Fast Switching Diodes Single and Dual Diode Configurations	OCR Scan	OT-23 OT-23 5b42205 00Q153D sot23 a4p diode cross reference Microwave PIN diode MA4P a4p sot-23 MA4p series pin diode cross reference 274c ma4p	PDF
im 308-c Abstract: ma47047 Contextual Info: M an A M P com pany PIN Diode Chips V 2.00 Features • • • • • • CERMACHIP glass o r Silicon D ioxide Passivation H erm etically Sealed CERMACHIP Design Fast Speed, Low Loss M icrowave Chips A ttenuator Chips Voltage Ratings to 1500 Volts W ide Range of PIN Characteristics	OCR Scan	MIL-STD883, im 308-c ma47047	PDF
transistor c 3206 Abstract: transistor j7 Contextual Info: Afa R adar Pulsed Power Transistor PH0404-7EL 7 Watts, 0.420-0.450 GHz, 20 ms Pulse, 20% Duty Features Outline Drawing • NPN Silicon Microwave Power Transistor •Common Emitter Configuration • Broadband Class C Operation • Reliable Fishbone Geometry	OCR Scan	PH0404-7EL Sb4220S 5b42205 0DQ1175 transistor c 3206 transistor j7	PDF
MA4ST230-1141 Abstract: varactor ghz DCS1800 MA4ST200 MA4ST230 MA4ST230CK-287 MA4ST240 MA4ST250 ROC SOT 23 sot-23 B8 Contextual Info: MA4ST200 Series M /A -C O M Low-Voltage / High Q Si Hyperabrupt Varactors Features • • • • • • • M\\I S M<K ^ ,»•% Configurations Surface M ount Packages SOT-23, SOT-323, SOD-323 High Q at Low Voltages High Capacitance Ratio at Low Voltages	OCR Scan	MA4ST200 OT-23, OT-323, OD-323) OD-323 OD-323 MA4ST230-1141 varactor ghz DCS1800 MA4ST230 MA4ST230CK-287 MA4ST240 MA4ST250 ROC SOT 23 sot-23 B8	PDF
S100 transistor Abstract: T30 transistor Contextual Info: M O S FET P o w e r Transistor Preliminary 30 Watts, 30-175 MHz, 12 V Features Outline Drawing • N-Channel Enhancement Mode Device • HF to VHF Applications • 30 Watts CW • Common Source Push-Pull Configuration • DMOS Structure • Aluminum Metallization	OCR Scan	5b42205 S100 transistor T30 transistor	PDF
SS MOSFET Abstract: dd260 S6020 Contextual Info: MOSFET P o w er Transistor A ß LF2620C Preliminary 20 Watts, 500 -1000 MHz, 26 V Features • • • • • Outline Drawing N-Channel Enhancement Mode Device UHF to Cellular Applications 20 Watts CW RESFET Structure Gold Metallization Absolute Maximum Ratings at 25°C	OCR Scan	LF2620C 1000mA 5b42205 SS MOSFET dd260 S6020	PDF
2N6665 Abstract: MA42001-509 2N6665-509 MA42181-510 2n5054 RF NPN POWER TRANSISTOR C 10-50 GHZ 2N2857 Model MA42001 ma42 transistor 2N3953 Contextual Info: an A M P com pany General Purpose Low Noise Bipolar Transistors Features Case Styles • Low Noise Through 1.5 GHz • Hermetic Package • Can Be Screened to JAN, JANTX, JANTXV Levels Description The series of Silicon NPN bipolar transistors are designed	OCR Scan	SL42E05 M220S 0001fl11 2N6665 MA42001-509 2N6665-509 MA42181-510 2n5054 RF NPN POWER TRANSISTOR C 10-50 GHZ 2N2857 Model MA42001 ma42 transistor 2N3953	PDF
J31 transistor Abstract: CR2480M transistor f 948 transistor mosfet 803 C953 20 amp MOSFET transistor PD233 GP 948 nee j8 Contextual Info: an A M P com pany MOSFET Power Transistor, 80W, 26V 925 - 960 MHz CR2480M V2.00 Features • • • • • • • N-Channel Enhancement Mode Device Cellular Base Station Applications 8 0 Watts CW Common Source Gem ni Configuration RESFET Structure Internal Input Impeda nee Matching	OCR Scan	CR2480M OLE71 5b42205 5b42505 J31 transistor transistor f 948 transistor mosfet 803 C953 20 amp MOSFET transistor PD233 GP 948 nee j8	PDF