5BW 43 Search Results

5az 11

Abstract: 5BW 30 5bw 12 marking code 5bw marking code 5AW marking 5AY 5bm Marking sma5j5
Contextual Info: SMA5J5.0 thru 40CA Vishay Semiconductors New Product formerly General Semiconductor High Power Density Surface Mount TRANSZORB Transient Voltage Suppressors Stand-off Voltage 5.0 to 40 V Peak Pulse Power 500 W DO-214AC SMA Cathode Band 0.065 (1.65) 0.110 (2.79)

5BW 30

Contextual Info: SMA5J5.0 thru SMA5J40CA Vishay General Semiconductor High Power Density Surface Mount TRANSZORB Transient Voltage Suppressors FEATURES • Low profile package • Ideal for automated placement • Glass passivated chip junction • Available in Unidirectional and Bidirectional

transistor 5bw

Abstract: marking code 5bw SMA5J22 marking 5bw marking code 5AW SMA5J18A SMA5J36 marking 5AY 5Am Marking marking code 5bw 67
Contextual Info: SMA5J5.0 thru 40CA Vishay Semiconductors New Product formerly General Semiconductor High Power Density Surface Mount TRANSZORB Transient Voltage Suppressors Stand-off Voltage 5.0 to 40 V Peak Pulse Power 500 W DO-214AC SMA Cathode Band 0.065 (1.65) 0.110 (2.79)

transistor 5bw

Abstract: MARKING CODE 5bw marking 5bw marking code 5bw 67 5BW MARKING marking 5ah marking code 5AW SMA5J22 transistor 6bn SMA5J36
Contextual Info: SMA5J5.0 thru SMA5J40CA Vishay General Semiconductor High Power Density Surface Mount TRANSZORB Transient Voltage Suppressors FEATURES • Low profile package • Ideal for automated placement • Glass passivated chip junction • Available in Unidirectional and Bidirectional

5BW 30

Abstract: C12V st 5bw 12 H278CGD H278CGD5V H278CGDL H278CHD H278CHD5V H278CHDL H278CRD
Contextual Info: L ED A s s y. No . ST A NDA RD H278CBW D H278CGD H278CY D H278CHD H278CRD H278CSRD L OW C URRENT H278CGDL H278CY DL H278CHDL 5 V OL T H278CGD5V H278CY D5V H278CHD5V 12 V OL T H278C5GC12V H278C5GD12V H278C5Y C12V H278C5Y D12V H278C5HC12V H278C5HD12V H278C5RC12V

MARKING 5bk

Contextual Info: SMA5J5.0 thru SMA5J40CA Vishay General Semiconductor High Power Density Surface Mount TRANSZORB Transient Voltage Suppressors FEATURES • Low profile package • Ideal for automated placement • Glass passivated chip junction • Available in Unidirectional and Bidirectional

5AW 67

Abstract: marking code 5bw 67 SMA5J30
Contextual Info: SMA5J5.0 thru SMA5J40CA Vishay General Semiconductor High Power Density Surface Mount TRANSZORB Transient Voltage Suppressors FEATURES • Low profile package • Ideal for automated placement • Glass passivated chip junction • Available in uni-directional and bi-directional

Contextual Info: SMA5J5.0 thru SMA5J40CA Vishay General Semiconductor High Power Density Surface Mount TRANSZORB Transient Voltage Suppressors FEATURES • Low profile package • Ideal for automated placement • Glass passivated chip junction • Available in uni-directional and bi-directional

marking code 5bw

Abstract: marking 5bs marking 5AY 5AW 83 SMA5J10 SMA5J12
Contextual Info: SMA5J5.0 thru SMA5J40CA Vishay General Semiconductor High Power Density Surface Mount TRANSZORB Transient Voltage Suppressors FEATURES • Low profile package • Ideal for automated placement • Glass passivated chip junction • Available in uni-directional and bi-directional

transistor 5bw

Abstract: 5BW MARKING SMA5J22 marking code 5bw SMA5J36 5AW 83 SMA5J24A 5BZ marking 5AY SMA5J18A marking 5bs
Contextual Info: SMA5J5.0 thru SMA5J40CA Vishay General Semiconductor High Power Density Surface Mount TRANSZORB Transient Voltage Suppressors FEATURES • Low profile package • Ideal for automated placement • Glass passivated chip junction • Available in uni-directional and bi-directional

marking code 5AW

Contextual Info: New Product SMA5J5.0 thru SMA5J40CA Vishay General Semiconductor High Power Density Surface Mount TRANSZORB Transient Voltage Supressors FEATURES • Low profile package • Ideal for automated placement • Glass passivated chip junction • Available in uni-directional and bi-directional

GENERAL SEMICONDUCTOR MARKING mJ SMA ED

Abstract: kvp 62a kvp 82a GFM 51A S4 68A GENERAL SEMICONDUCTOR MARKING SJ SMA 6V8C BFM 62A kvp 75a GFM 16A
Contextual Info: PPD Marking Vishay Semiconductors formerly General Semiconductor Axial Marking GS Part Number Cathode Band GP15M 0308 GS Part Number 1N4005 GP 0308 GP15M Logo/Date Code GS Logo Subject to Change Polarity Cathode Band 1N4005/Logo (GS Logo Subject to Change)

VHR-3100

Abstract: lb 1641 VIDEO17
Contextual Info: LC 6568H - 3350 Ukfad scalony duzej skali integracji LC 6568H-3350 jest procesorem MECHACON zastosowanym w magnetowidzie SANYO VHR-3100 EE oraz pochodnych. Steruje ukladem servo LC7412-8017 i LA 116 , a przez uklad LB 1641 silnikiem tadowania kasety i tasrny. Taktowany jest zegarem o cz^stotliwosci 4 MHz, zasilany jest napi^ciem 5 V

B12 GDM

Abstract: BYS045 GENERAL SEMICONDUCTOR MARKING SJ SMA s104 68A BYS-045 kvp 62a GENERAL SEMICONDUCTOR MARKING mJ SMA ED BYS209 S4 68A S104 8a
Contextual Info: PDD Marking Vishay General Semiconductor PDD Marking AXIAL MARKING Cathode Band Polarity GP15M 0621X Cathode Band Part Number Logo/Date Code Polarity SB340 0621X Part Number/ Date Code/Logo DATE CODE DATE CODE 06 21 X 06 21 X Factory Designator DO-204AC/ DO-204AL

smd code marking 5bw

Contextual Info: COMCHIP SMD Transient Voltage Suppressor SMD Diodes Specialist TV05A5V0-HF Thru. TV05A191-HF Working Peak Reverse Voltage: 5.0 to 190 Volts Peak Pulse Power: 500 Watts RoHS Device Halogen free DO-214AC SMA Features -Glass passivated chip. 0.175(4.44) 0.155(3.94)

305 5VL

Abstract: 5AW SMD MARKING CODE 5VL 305
Contextual Info: COMCHIP SMD Transient Voltage Suppressor SMD Diodes Specialist TV05A5V0-G Thru. TV05A191-G Working Peak Reverse Voltage: 5.0 to 190 Volts Peak Pulse Power: 500 Watts RoHS Device Features DO-214AC SMA -Glass passivated chip. -Low leakage. 0.175(4.44) 0.155(3.94)

5VL 305

Contextual Info: SMD Transient Voltage Suppressor TV05A5V0-HF Thru. TV05A191-HF Working Peak Reverse Voltage: 5.0 to 190 Volts Peak Pulse Power: 500 Watts RoHS Device Halogen Free DO-214AC SMA Features -Glass passivated chip. 0.175(4.44) 0.155(3.94) -Low leakage. -500W peak pulse power capability with a 10/1000 s

Contextual Info: HA12089NT/MP -Sound Signal Processing IC for Automatic Telephone Answering System The HA12089 is the IC designed for sound signal processing for automatic telephone answering system. As the device builds mainly in fundamental features necessary to the automatic answering

transistor 5bw

Abstract: 2SB562C transistor 5bw 71 HA12089MP HA12089NT 5BW 30
Contextual Info: HA12089NT/MP -Sound Signal Processing 1C fo r Autom atic Telephone Answering System The HA12089 is the IC designed for sound signal processing for automatic telephone answering system. As the device builds mainly In fundamental features necessary to the automatic answering

transistor 5bw

Contextual Info: HA12089NT/MP-Sound Signal Processing IC for Automatic Telephone Answering System Description HA12089NT The HA12089 is the IC designed for sound signal processing for automatic telephone answering system. As the device builds mainly in fundamental features necessary to the automatic answering

V1004C

Abstract: SA5V 3DQ11
Contextual Info: KM416C1004C, KM416C1204C KM416V1004C, KM416V1204C CMOS DRAM 1M x 16Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This Is a family of 1,048,576 x 16 bit Extended Data Out CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power supply voltage +5.0V or +3.3V , refresh cyde (1K Ref. or 4K

DS1991L-F5

Contextual Info: DS1991 MultiKey iButton www.iButton.com ƒ SPECIAL FEATURES ƒ ƒ ƒ ƒ ƒ ƒ ƒ 1,152-bit secure read/write, nonvolatile memory Secure memory cannot be deciphered without matching 64-bit password Memory is partitioned into 3 blocks of 384 bits each 64-bit password and ID fields for each

SPEC-883 cold plate method

Abstract: SPEC-883 G-38-87 5bw 78
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MCM69F737 Product Preview 128K x 36 Bit Flow-Through BurstRAM Synchronous Fast Static RAM The MCM69F737 is a 4M bit synchronous fast static RAM designed to provide a burstable, high performance, secondary cache for the PowerPC™ and other

Contextual Info: IBM043611QLAB IBM041811QLAB Prelim inary 32K X 36 & 64K X 18 SRAM Features • 32K x 36 or 64K x 18 Organizations • 0.5 Micron CMOS Technology • Synchronous Pipeline Mode Of Operation with Self-Timed Late Write • Single Differential GTL/HSTL Clock • Single +3.3V Power Supply and Ground