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AMD XCV100-4CS144C IC FPGA 94 I/O 144CSBGA
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DigiKey	XCV100-4CS144C	Tray				1 - 10 - 100 - 1000 - 10000 -	Buy Now
AMD XCV100-4CS144I IC FPGA 94 I/O 144CSBGA
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DigiKey	XCV100-4CS144I	Tray				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Renesas Electronics Corporation 9FGV1004C117NBGI IC CLOCK GENERATOR 24VFQFPN
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	9FGV1004C117NBGI	Tray				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Renesas Electronics Corporation 9FGV1004C000NBGI IC CLOCK GENERATOR 24VFQFPN
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	9FGV1004C000NBGI	Tray				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Renesas Electronics Corporation 9FGV1004C213NBGI IC CLOCK GENERATOR 24VFQFPN
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DigiKey	9FGV1004C213NBGI	Tray				1 - 10 - 100 - 1000 - 10000 -	Buy Now

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V1004C Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: KM44C1004C, V1004C CMOS DRAM 1M x 4 Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 1,048,576 x 4 bit Extended Data Out CMOS DRAMs. Extended Data Out offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , access	OCR Scan	KM44C1004C, KM44V1004C 7TbM14E	PDF
Contextual Info: KM44C1004C, V1004C CMOS DRAM 1 M x 4 B i t CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 1,048,576 x 4 bit Extended Data Out CMOS DRAMs. Extended Data Out offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , access	OCR Scan	KM44C1004C, KM44V1004C b41H2 Q0231Ã	PDF
Contextual Info: KM44C1004C, V1004C CMOS DRAM 1 M x 4 B i t CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 1,048,576 x 4 bit Extended Data Out CMOS DRAMs. Extended Data Out offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , access	OCR Scan	KM44C1004C, KM44V1004C	PDF
C1204C Abstract: KM416C1004C KM416C1204C KM416V1004C KM416V1204C V1004C Contextual Info: KM416C1004C, KM416C1204C V1004C, KM416V1204C CMOS DRAM 1M x 16Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a fam ily of 1,048,576 x 16 bit Extended Data Out CMOS DRAMs. Extended Data O ut Mode offers high speed random access of mem ory cells within the sam e row, so called Hyper Page Mode. Power supply voltage +5.0V or +3.3V , refresh cycle (1K Ref. or 4K	OCR Scan	KM416C1004C, KM416C1204C KM416V1004C, KM416V1204C 16Bit 1Mx16 C1204C KM416C1004C KM416C1204C KM416V1004C KM416V1204C V1004C	PDF
Contextual Info: KM44C1004C, V1004C CMOS DRAM 1M x 4 Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION T his is a fa m ily of 1,048,576 x 4 bit E xtended Data O ut CM O S D R A M s. E xtended D ata O ut o ffe rs high speed random acce ss of m em ory cells w ithin the sam e row. Pow er supply volta g e + 5 .0V or +3.3V , access	OCR Scan	KM44C1004C, KM44V1004C	PDF
V1004C Abstract: SA5V 3DQ11 Contextual Info: KM416C1004C, KM416C1204C V1004C, KM416V1204C CMOS DRAM 1M x 16Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This Is a family of 1,048,576 x 16 bit Extended Data Out CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power supply voltage +5.0V or +3.3V , refresh cyde (1K Ref. or 4K	OCR Scan	KM416C1004C, KM416C1204C KM416V1004C, KM416V1204C 16Bit 1Mx16 64ms/16ms V1004C SA5V 3DQ11	PDF
be5e Abstract: 31DQ3 Contextual Info: KM44C1004C, V1004C CMOS DRAM 1 M x 4 B i t CMOS Dynamic RAM with Extended Data Out DESCRIPTION T his is a fa m ily of 1 ,048,576 x 4 bit E xtended Data O ut CM O S D R A M s. E xtended Data O ut o ffe rs high speed random acce ss of m em ory cells w ithin the sam e row. Power supply vo lta g e + 5 .0V or +3.3V , access	OCR Scan	KM44C1004C, KM44V1004C be5e 31DQ3	PDF
C1204C Abstract: KM416C1004C KM416C1204C KM416V1004C KM416V1204C Contextual Info: KM416C1004C, KM416C1204C V1004C, KM416V1204C CMOS DRAM 1M x 16Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 1,048,576 x 16 bit Extended Data Out CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power supply voltage +5.0V or +3.3V , refresh cycle (1K Ref. or 4K	Original	KM416C1004C, KM416C1204C KM416V1004C, KM416V1204C 16Bit 1Mx16 using1204C 400mil C1204C KM416C1004C KM416C1204C KM416V1004C KM416V1204C	PDF