5F MARKING Search Results
5F MARKING Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
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5962-8950303GC |
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ICM7555M - Dual Marked (ICM7555MTV/883) |
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54HC221AJ/883C |
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54HC221AJ/883C - Dual marked (5962-8780502EA) |
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54ACT157/VFA-R |
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54ACT157/VFA-R - Dual marked (5962R8968801VFA) |
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54LS37/BCA |
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54LS37/BCA - Dual marked (M38510/30202BCA) |
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MG8097/B |
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8097 - Math Coprocessor - Dual marked (8506301ZA) |
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5F MARKING Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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SV24B
Abstract: snap-off diode diode 5f ND1243-5F ND1242-5F SV24A
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OCR Scan |
a427Mm GD0n32 ND1242-5F ND1243-5F ND1242 ND1243 b4E7414 ND1242-5F, SV24B snap-off diode diode 5f ND1243-5F SV24A | |
1S1855
Abstract: NEC 1s1855 1S1857 1S1856 ND1551-7F snap-off diode ND1571-5F diode 5f DIODE E 7F ND1561-5F
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OCR Scan |
b427414 ND1551-7F ND1561-5F ND1571-5F ND1551 ND1571-5F ND1551-7F, ND1561-5F, 1S1855 NEC 1s1855 1S1857 1S1856 snap-off diode diode 5f DIODE E 7F | |
marking MFContextual Info: Product catalogue | Installation Products | Markings | Terminal markers | MultiCard | Multifit | Blank General ordering data Order No. Part designation Version EAN Qty. 1816280000 MF-W 9/5F MC NEUTRAL Connector markers, L x W: 9 x 5 mm, Polyamide 66, white |
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Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Silicon Junction FETs (Small Signal) 2SK3546G Silicon N-Channel MOSFET For switching • Features ■ Package • High-speed switching • Wide frequency band • Code SSMini3-F3 • Marking Symbol: 5F |
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2002/95/EC) 2SK3546G | |
2SK3546GContextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Silicon Junction FETs (Small Signal) 2SK3546G Silicon N-Channel MOSFET For switching • Package • High-speed switching • Wide frequency band • Code SSMini3-F3 • Marking Symbol: 5F • Pin Name |
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2002/95/EC) 2SK3546G 2SK3546G | |
CT0402CSFContextual Info: Wire-wound Chip Inductors - Open CT0402CSF Series From 1.0 nH to 120 nH ENGINEERING KIT #5F Not shown at actual size. RoHS Compliant CHARACTERISTICS Description: SMD ceramic core wire-wound chip inductor Applications: Telecommunication equipment, mobile phones, |
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CT0402CSF HP4287A CT0402CSF-R10_ CT0402CSF-R12_ | |
8N7 markingContextual Info: Wire-wound Chip Inductors - Open CT0402CSF Series From 1.0 nH to 120 nH ENGINEERING KIT #5F Not shown at actual size. RoHS Compliant CHARACTERISTICS Description: SMD ceramic core wire-wound chip inductor Applications: Telecommunication equipment, mobile phones, |
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CT0402CSF CT0402CS-3N6_ HP4287A 8N7 marking | |
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Silicon Junction FETs (Small Signal) 2SK3547G Silicon N-channel MOSFET For switching • Package ■ Features • Code SSSMini3-F2 • Marking Symbol: 5F • Pin Name 1: Gate 2: Source 3: Drain |
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2002/95/EC) 2SK3547G | |
2SK3547GContextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Silicon Junction FETs (Small Signal) 2SK3547G Silicon N-channel MOSFET For switching • Package ■ Features • Code SSSMini3-F2 • Marking Symbol: 5F • Pin Name 1: Gate 2: Source 3: Drain |
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2002/95/EC) 2SK3547G 2SK3547G | |
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Silicon Junction FETs (Small Signal) 2SK3546G Silicon N-Channel MOSFET For switching • Package • High-speed switching • Wide frequency band • Code SSMini3-F3 • Marking Symbol: 5F • Pin Name |
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2002/95/EC) 2SK3546G | |
CT0402CSFContextual Info: Wire-wound Chip Inductors - Open CT0402CSF Series From 1.0 nH to 120 nH ENGINEERING KIT #5F Not shown at actual size. RoHS Compliant CHARACTERISTICS Description: SMD ceramic core wire-wound chip inductor Applications: Telecommunication equipment, mobile phones, |
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CT0402CSF CT0402CS-3N6_ HP4287A | |
Contextual Info: Wire-wound Chip Inductors - Open CT0402CSF Series From 1.0 nH to 120 nH ENGINEERING KIT #5F Not shown at actual size. RoHS Compliant CHARACTERISTICS Description: SMD ceramic core wire-wound chip inductor Applications: Telecommunication equipment, mobile phones, |
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CT0402CSF CT0402CS-2N0_ | |
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Silicon Junction FETs (Small Signal) 2SK3547G Silicon N-channel MOSFET For switching • Package • Code SSSMini3-F2 • Marking Symbol: 5F • Pin Name 1: Gate 2: Source 3: Drain M Di ain sc te |
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2002/95/EC) 2SK3547G | |
CT1008CSFContextual Info: SMD Wire-wound Chip Inductors CT1008CSF Series From 3.9 nH to 10000 nH ENGINEERING KIT #5F Not Shown at Actual Size CHARACTERISTICS Description: SMD ceramic core wire-wound chip inductor. Applications: LC resonant circuits such as oscillator and signal |
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CT1008CSF CT1008CSF-330_ CT1008CSF-030_ CT1008CSF-040_ CT1008CSF-080_ CT1008CSF-100_ CT1008CSF-120_ CT1008CSF-150_ CT1008CSF-180_ CT1008CSF-220_ | |
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Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Silicon MOSFETs (Small Signal) 2SK3539G Silicon N-channel MOSFET For switching • Package • Code SMini3-F2 • Marking Symbol: 5F • Pin Name 1: Gate 2: Source 3: Drain M Di ain sc te on na |
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2002/95/EC) 2SK3539G | |
M39019
Abstract: MIL-PRF-39019 MS35265-26 MS35333-134 MIL-C-39019 MS35333-71 MS25082-20 MS25082 MS35265-25 MIL-PRF-39019/06
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MIL-PRF-39019/5G MIL-PRF-39019/5F MIL-PRF-39019. MIL-C-39019/5B M39019/581 M39019/05218 M39019 MIL-PRF-39019 MS35265-26 MS35333-134 MIL-C-39019 MS35333-71 MS25082-20 MS25082 MS35265-25 MIL-PRF-39019/06 | |
Contextual Info: CDU BC807 BC808 SILICON PLANAR EPITAXIAL TRANSISTORS P-N-P transistor Marking BC807 = 5D BC807-16 = 5A BC807-25 = 5B BC807-40 = 5C BC808 = 5H BC808-16 = 5E BC808-25 = 5F BC808-40 = 5G PA CKA GE OU TLINE DETAILS A LL DIM ENSIO NS IN m m 3.0_ 2.8 0.14 0.09 0.48 |
OCR Scan |
BC807 BC808 BC807-16 BC807-25 BC807-40 BC808-16 BC808-25 BC808-40 | |
Contextual Info: 5F. www.vishay.com Vishay Cera-Mite RF Power Barrel Capacitors Class 1 Ceramic FEATURES • Very small size make it well suited in mobile equipment • Geometry minimizes inductance, optimizes voltage withstand and maximizes heat radiation • Available with thread terminals or solderable wire leads |
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2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 | |
CT0805CSFContextual Info: Wire-wound Chip Inductors - Open CT0805CSF Series SPECIFICATIONS Please specify tolerance code when ordering. CT0805CSF-120_ G = ±2%, J = ±5%, K = ±10%, M = ±20% * = K or M only * = J, K or M only From 2.2 nH to 2700 nH Part Number ENGINEERING KIT #5F |
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CT0805CSF CT0805CSF-120_ | |
Contextual Info: Amphenol Amphenol East Asia Ltd. 5F., No. 361, Fusing 1st Road, Gueishan Township Taoyuan County, 33375 Taiwan Tel: 886-3-264-7200 Fax: 886-3-327-5196 SPECIFICATION FOR APPROVAL Customer: ACC Description: D-SUB CONNECTOR STRAIGHT PCB MOUNT RECEPTACLE No. Amphenol Part No. |
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G17T0902121CEU GS-17TEU UL94V-O QQ-B-750 NE-05266 NE-01712 NE-00416 NE-99260 | |
1n0KContextual Info: Wire-wound Chip Inductors - Open CT0402CSF Series From 1.0 nH to 120 nH ENGINEERING KIT #5F Not Shown at Actual Size CHARACTERISTICS Description: SMD ceramic core wire-wound chip inductor. Applications: Telecommunication equipment, mobile phones, small size pagers, computers, printers and relevant equipment. |
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CT0402CSF CT0402CS-3N6_ CT0402CSF-1N0K CT0402CSF-1N9K CT0402CSF-2N0K CT0402CSF-2N2K CT0402CSF-2N4K CT0402CSF-2N7K CT0402CSF-3N3_ CT0402CSF-3N6_ 1n0K | |
Contextual Info: TXC CORPORATION 5F, NO. 16, Sec. 2 Chung Yang S Rd., Peitou, Taipei, Taiwan. TEL : 886-2-2894-1202 , 886-2-2895-2201 FAX : 886-2-2894-1206 , 886-2-2895-6207 www.txccorp.com SPECIFICATION FOR APPROVAL CUSTOMER : PRODUCT TYPE : SMD SEAM SEALING XTAL 5.0*3.2 |
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768000MHz 7B32700038 MIL-STD-202F MIL-STD-883E 1000Hrs C5023 RH100% 240Hrs C6701 | |
Contextual Info: 5F. www.vishay.com Vishay Cera-Mite RF Power Barrel Capacitors Class 1 Ceramic FEATURES • Very small size make it well suited in mobile equipment • Geometry minimizes inductance, optimizes voltage withstand and maximizes heat radiation • Available with thread terminals or solderable wire leads |
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2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
Contextual Info: 5F. www.vishay.com Vishay Cera-Mite RF Power Barrel Capacitors Class 1 Ceramic FEATURES • Very small size make it well suited in mobile equipment • Geometry minimizes inductance, optimizes voltage withstand and maximizes heat radiation • Available with thread terminals or solderable wire leads |
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2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 |