5M10 Search Results

Contextual Info: GT-5M10 SERIES-10W ISO 9001:2008 REGISTERED 10 Watts, On-Board Universal Input AC-DC Encapsulated Modular Power Supplies Single & Dual Output ELECTRICAL SPECIFICATIONS: INPUT VOLTAGE: 90-264VAC TYPICAL. OR 110-340VDC INPUT CURRENT: 0.3A @ 115VAC./ 0.13A @ 230VAC

Contextual Info: Motor driver ICs PNP transistor array BA6254FS The BA6254FS has been developed as a low-saturation output, upper-side transistor array for iow-voltage m otor drive applications. The three PNP transistors have a common emitter. •A p p lic a tio n s Motor drivers

Contextual Info: LM49370 www.ti.com SNAS356D – FEBRUARY 2007 – REVISED MARCH 2012 LM49370 Boomer Audio Power Amplifier Series Audio Sub-System with an Ultra Low EMI, Spread Spectrum, Class D Loudspeaker Amplifier, a Dual-Mode Stereo Headphone Amplifier, and a Dedicated PCM Interface for Bluetooth Transceivers

6SE70

Contextual Info: LM4947, LM4947TLEVAL www.ti.com LM4947 SNAS349D – JUNE 2006 – REVISED MAY 2013 Mono Class D and Stereo Audio Sub-System with OCL Headphone Amplifier and TI 3D Check for Samples: LM4947, LM4947TLEVAL FEATURES 1 • • 2 • • • • • • • •

DTA124ECA

Abstract: transistor PNP A124e R1 II
Contextual Info: Transistors Digital transistors built-in resistors DTA124EE/DTA124EU A/DTA124EKA/ DTA124ECA/DTA124ESA •F e a tu re s •E x te rn a l dimensions (Units: mm) 1) Built-in bias resistors en ab le the configuration of an inverter circuit DTA124EE 1.0Î0.1

schematic diagram atx Power supply 500w

Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
Contextual Info: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455

5M1010-1

Abstract: st5m1348ts RG180 CABLE ST5V1
Contextual Info: STAMP: KINGS 1 2 5 - * - * ST5M1348TS* NOTES: 1. MATERIALS: INSULATOR: TEFLON, ASTM-O-1457 GASKET: SH. RUB., ZZ-R-765 C-RNG: BER. COP., ASTU-B-196 K-GRJP SLEEVE: COM. BRONZE TUBE, ALLOT 220 ALL OTHER PARTS: BRASS, ASTM-816 2. PUSHES: CENTER CONTACT: HARO GOLD PIT. PER IB.-G-45204

MC0402

Abstract: MC00625W040211M MC00625 Thick Film Chip Resistor 0402
Contextual Info: Thick Film Chip Resistor 0402 Features • Small size and light weight • Suitable for both wave and reflow soldering • Reduction of assembly costs Performance Specification Temperature Coefficient : 1Ω to 10Ω ±400PPM/°C 11Ω to 100Ω ±200PPM/°C

resistor

Abstract: 1m15
Contextual Info: Thick Film Chip Resistor 1206 Features • Small size and light weight • Suitable for both wave and reflow soldering • Reduction of assembly costs Performance Specification Temperature Coefficient : 1Ω to 10Ω ±400PPM/°C 11Ω to 100Ω ±200PPM/°C

Contextual Info: LM4935, LM4935RLEVAL www.ti.com SNAS296E – OCTOBER 2005 – REVISED MAY 2013 LM4935 Boomer Audio Power Amplifier Series Audio Sub-System with Dual-Mode Stereo Headphone & Mono High Efficiency Loudspeaker Amplifiers and Multi-Purpose ADC Check for Samples: LM4935, LM4935RLEVAL

2SB1424

Abstract: 2SD2150 T100
Contextual Info: 2SD2150 Transistors Low Frequency Transistor 20V, 3A 2SD2150 zExternal dimensions (Unit : mm) zFeatures 1) Low VCE(sat). VCE(sat) = 0.2V(Typ.) （IC / IB = 2A / 0.1A） 2) Excellent current gain characteristics. 3) Complements the 2SB1424. 2SD2150 0.5±0.1

lm4935

Contextual Info: LM4935, LM4935RLEVAL www.ti.com SNAS296E – OCTOBER 2005 – REVISED MAY 2013 LM4935 Boomer Audio Power Amplifier Series Audio Sub-System with Dual-Mode Stereo Headphone & Mono High Efficiency Loudspeaker Amplifiers and Multi-Purpose ADC Check for Samples: LM4935, LM4935RLEVAL

2SA1585S

Abstract: 2SC4115S SC-72
Contextual Info: 2SC4115S Transistors Low Frequency Transistor 20V, 3A 2SC4115S zExternal dimensions (Unit : mm) zFeatures 1) Low VCE(sat). VCE(sat) = 0.2V(Typ.) （IC / IB = 2A / 0.1A） 2) Excellent current gain characteristics. 3) Complements the 2SA1585S. 2SC4115S 2±0.2

2SD2264

Contextual Info: 2SD2264 Transistors Low Frequency Transistor 20V, 3A 2SD2264 zExternal dimensions (Unit : mm) zFeatures 1) Low VCE(sat). VCE(sat) = 0.2V(Typ.) （IC / IB = 2A / 0.1A） 2) Excellent current gain characteristics. 2SD2264 2.5±0.2 0.65Max. zStructure Epitaxial planar type

milli ohm resistor

Contextual Info: Low Ohm Shunt Type HPA Series Type HPA Series Characteristics Electrical Rated Wattage: Resistance Range Ohms : HPA 1 HPA 2 HPA 3 HPA 5 HPA 7 HPA 10 HPA 15 HPA20 1 2 3 5 7 10 15 20 5m-30m 5m-50m 5m-100m 5m-100m 10m-120m 10m-300m 10m-300m 10m-400m Derating Curve

resistor

Abstract: mc0.1w0805 3r3
Contextual Info: Thick Film Chip Resistor 1206 Features • Small size and light weight • Suitable for both wave and reflow soldering • Reduction of assembly costs Performance Specification Temperature Coefficient : 1Ω to 10Ω ±400PPM/°C 11Ω to 100Ω ±200PPM/°C

FRC20

Abstract: FRC 20 100 kva transformer transformers of power station ac motor interface with 8051 5M1010B staco 3PN2210B 501C 399-0172-S
Contextual Info: 1022-2012:QuarkCatalogTempNew 9/5/12 3:24 PM Page 1022 Ganged Variable Transformers, Controllers and Replacement Parts Three-Phase Ganged Variable Transformers RoHS INTERCONNECT TEST & MEASUREMENT 11 1020B-3 Motor-Driven Variable Transformers RoHS 6020E-3Y

E50U

Abstract: c2a marking 2SD2150 sot89 "NPN TRANSISTOR" marking C2A
Contextual Info: 2SD2150 NPN Plastic-Encapsulate Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free SOT-89 Features 4.4~4.6 1 1.4~1.8 2 1.4~1.6 3 3.94~4.25 1.BASE 2.COLLECTOR 2.3~2.6 * Excellent Current-to-Gain Characteristics

2SC4115S

Contextual Info: 2SC4115S NPN Silicon Elektronische Bauelemente General Purpose Transistor RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free TO-92S FEATURES 1.5 ±0.2 3.1±0.2 4.0±0.2 Power dissipation PD: 0.3 W Tamb=25 I CM: 15.3 ±0.2 Collector current

Contextual Info: Transistors Digital transistors built-in resistors DTA114EE/DTA114EUA/DTA114E KA/DTA114ESA •F e a tu re s • E x te rn a l dim ensions (Units: mm) 1) B u ilt-in bias re s is to rs e n a b le th e con figu ration o f an inverter circu it DTA114EE 1.0 ± 0.1

catalogue de transistor

Contextual Info: Transistors Digital transistors built-in resistors DTA114YE/DTA114YUA/DTA114YKA/DTA114YSA •F eatu re s 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). 2) The bias resistors consist of thinfilm resistors with complete isola­

5490A

Abstract: B 1359 970-900 2SB798 2SD999 IEI-1213 MEI-1202 MF-1134 marking dk sot-89
Contextual Info: DATA SHEET • NEC SILICON TRANSISTOR 2SB798 PNP SILICON EPITAXIAL TRANSISTOR POWER M IN I MOLD DESCRIPTION The 2SB798 is designed for audio frequency power amplifier application, especially in Hybrid Integrated Circuits. FEATURES • World Standard Miniature Package

IEI-1213

Abstract: MF-1134 MEI-1202 SEMICONDUCTOR DEVICE MOUNTING TECHNOLOGY MANUAL 2SB799 ml 1134 2SD1000 quality assurance for semiconductor devices NEC IR SOT89 transistor marking MK
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SB799 PNP SILICON EPITAXIAL TRANSISTOR POWER M IN I MOLD DESCRIPTION The 2SB 799 is designed fo r audio frequency power am plifier application, especially in Hybrid Integrated Circuits. FEATURES PACKAGE DIMENSIONS • World Standard M iniature Package

ST5M1348TS2B

Abstract: ST5M1348TS1B 5M1010-1 ST5M1348ts1e ST5M1348TS6B ST5M1348TS1C R/S3C9004/P9004/C9014/KTH-2216
Contextual Info: DASH NO. M CODE MADE FROM ST5M 1348TS* NOTES: 1. MATERIALS: INSULATOR: TEFLON, ASTM-D-1457 GASKET: SIL. RUB., Z Z -R -7 6 5 C-RING: BER. COP., ASTM-B-196 K-GRIP SLEEVE: COM. BRONZE TUBE. ALLOY 220 ALL OTHER PARTS: BRASS, ASTM-B16 2. FINISHES: CENTER CONTACT: HARD GOLD PLT. PER MIL-G-45204