2SB798 Search Results

N0201

Contextual Info: Data Sheet N0201R R07DS0718EJ0100 Rev.1.00 Mar 30, 2012 PNP SILICON EPITAXIAL TRANSISTOR FEATURES •    Complements to N0201S. VCEO = 25 V IC DC = 1.0 A Miniature package SOT-23F (2SB798: Package variation of 3pPoMM) PRODUCT LINEUP Part Number

ta69

Contextual Info: NEC SILICON TRANSISTOR ELECTRON DEVICE 2SB798 PNP SILICON EPITAXIAL TRANSISTOR POWER M IN I MOLD DESCRIPTION The 2SB798 is designed fo r audio frequency power a m plifier application, especially in H yb rid Integrated Circuits. FEATURES PACKAGE DIMENSIONS

n20m

Contextual Info: SILICON TRANSISTOR 2SB798 PNP SILICON EPITAXIAL TRANSISTOR POWER M IN I MOLD DE SC RIPTIO N The 2S 8798 is designed fo r audio frequency pow er a m p lifie r a pp lica tion, especially in H y b rid Integrated Circuits. FE A TU R ES • W orld Standard M inia tu re Package

Contextual Info: Product specification 2SB798 Features World standard miniature package:SOT-89 Low collector saturation voltage:VCE sat <-0.4V(IC=-1.0A,IB=-100mA) Excellent DC Current Gain Linearity:hFE=100TYP.(VCE=-10.V,IC=-1.0A) Absolute Maximum Ratings Ta = 25 Parameter

Contextual Info: UTC 2SB798 PNP EPITAXIAL SILICON TRANSISTOR POWER TRANSISTOR DESCRIPTION The UTC 2SB798 is designed for audio frequency power amplifier applications, especially in Hybrid Integrated Circuits. 1 FEATURES *Low Collector Saturation Voltage: VCE sat < -0.4V (Ic= -1.0A,IB=-100mA )

transistor SMD DK

Abstract: dm SMD MARKING sot-89 smd transistor marking DK marking dk sot-89 TRANSISTOR SMD PNP 1A smd MARKING dk dk SOT89 DM sot-89 TRANSISTOR MARKING DM 2SB798
Contextual Info: Transistors SMD Type PNP Silicon Epitaxial Transistor 2SB798 Features World standard miniature package:SOT-89 Low collector saturation voltage:VCE sat <-0.4V(IC=-1.0A,IB=-100mA) Excellent DC Current Gain Linearity:hFE=100TYP.(VCE=-10.V,IC=-1.0A) Absolute Maximum Ratings Ta = 25

TFK 082

Abstract: tfk 521 TFK U 111 B tfk 140 / TC ST 1000 2SD999 DA SOT-89 TFK 212
Contextual Info: = T — • ^ 5 / — h S ilico n T r a n s is to r 2SD999 m # ^-fi ! mm o f ë M M M J£ W i? E ÿ v * , :£ -tr-y H Ì W Ì g : ) a ì ^ t h Ì i f f l i - S T i 1 'c O 2SB798<Î; n > 7 °'J p< > ? ') § ito 1.5 + 0.1 Î Ê * Î f i * Æ f t (T a =

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SB798 PNP EPITAXIAL SILICON TRANSISTOR POWER TRANSISTOR  DESCRIPTION The UTC 2SB798 is designed for audio frequency power amplifier applications, especially in Hybrid Integrated Circuits.  FEATURES * Low Collector Saturation Voltage:

dk qw

Abstract: 2SB798
Contextual Info: UTC 2SB798 PNP EPITAXIAL SILICON TRANSISTOR POWER TRANSISTOR DESCRIPTION The UTC 2SB798 is designed for audio frequency power amplifier applications, especially in Hybrid Integrated Circuits. 1 FEATURES *Low Collector Saturation Voltage: VCE sat < -0.4V (Ic= -1.0A,IB=-100mA )

Contextual Info: DATA SHEET NEC / SILICON TRANSISTOR _ / 2SB798 PNP SILICON EPITAXIAL TRANSISTOR POWER M IN I MOLD DESCRIPTION The 2S B798 is designed fo r audio frequency pow er a m p lifie r a pp lica tion, especially in H y b rid Integrated C ircuits. FEATURES PACKAGE DIMENSIONS

dk SOT-89

Abstract: dk SOT89 2SB798-L
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SB798 PNP EPITAXIAL SILICON TRANSISTOR POWER TRANSISTOR „ DESCRIPTION 1 The UTC 2SB798 is designed for audio frequency power amplifier applications, especially in Hybrid Integrated Circuits. „ FEATURES * Low Collector Saturation Voltage:

5490A

Abstract: B 1359 970-900 2SB798 2SD999 IEI-1213 MEI-1202 MF-1134 marking dk sot-89
Contextual Info: DATA SHEET • NEC SILICON TRANSISTOR 2SB798 PNP SILICON EPITAXIAL TRANSISTOR POWER M IN I MOLD DESCRIPTION The 2SB798 is designed for audio frequency power amplifier application, especially in Hybrid Integrated Circuits. FEATURES • World Standard Miniature Package

N0201

Contextual Info: Data Sheet N0201R R07DS0718EJ0100 Rev.1.00 Mar 30, 2012 PNP SILICON EPITAXIAL TRANSISTOR FEATURES •    Complements to N0201S. VCEO = 25 V IC DC = 1.0 A Miniature package SOT-23F (2SB798: Package variation of 3pPoMM) PRODUCT LINEUP Part Number

Contextual Info: UNISONICTECHNOLOGIESCO., LTD 2SB798 PNP EPITAXIAL SILICON TRANSISTOR POWER T RAN SI ST OR ̈ DESCRI PT I ON 1 The UTC 2SB798 is designed for audio frequency power amplifier applications, especially in Hybrid Integrated Circuits. ̈ FEAT U RES * Low Collector Saturation Voltage:

2sa1154

Abstract: 2SC2719 2sc2720 2SC1280 2SA1152 2SA1151 2SA603 2SD1297 2SC943 NTC2335
Contextual Info: N E C ELECTRONICS INC C Transistors ET b4S7SES OOOblDl 1 STC iààau M i T -33- 0 / •Wim - W - I J .4 I U Ü Í I J W 3 B ! U W M P H 1 »VJW» '»J-M* 1 ■JM ■ r t n ïi « t i n t o • Darlington Power Transistors '^ U c VceoM (DC |A1 \ Package \

2SB816

Abstract: 2SB1212 2SB921 2SB873 2SA1120 2SB1085B 2sb 989 2SB941 2SC4341 2SB1416
Contextual Info: 59 - fi 2SB 980 2SB 2SB 2SB 2SB 2S8 2SB 981 982 983 , 984 _ • 985 986 , 2S8 987 2SB 988 « Manuf. T K T tfi T fö T S tB t u q n 989 991 992 993 994 995 996 2SB 2SB 2SB 2SB 2SB 997 ^ 998 999 1000 1000A H 3 SANYO 9ÇR77C; 2SB775 2SB816 2SB825 2SB816 * 2SA17Q3

RTIP144C

Abstract: RTIN141C RTIN141S 2SD947 equivalent 2SD612K equivalent of transistor 2SA1115 RTIN241C rtip241 2sd880 equivalent RTIN140C
Contextual Info: m&ttm -urn h "7 > v X £ /T ra n sisto rs ddp h 7> y of Transistor Equivalent Products S M t r o iS H li, L T 2 fiJffl< t £ £ i \ LT IS * * * ' 6 S & It should be borne in mind that following listings are made according to the transistors’ maximum ratings.

2SC2719

Abstract: 2sc2720 NTC2335 2SC1280A 2SA603 28c128 2SA1154 NTB601 NTC27 NTB795
Contextual Info: N E C ELECTRONICS INC STC C Transistors ET *fS*B U .Jjl.W bMSTSES DOOblOl 1 D atom [v j w -I»W1 -i»'. I.U I •JU iM à ta iiita iib É ttâ d K i • D arlington Pow er Transistors '"~'''S=-Jc DC [A] Vceom \ Package \ 60 TO-126 80 TO-126 3.0 2.0 1.5

micro servo 9g

Abstract: uPa2003 micro servo 9g tower pro 2SK1060 uPD3599 201 Zener diode 2SK2396 upc1237 infrared sensor TSOP - 1836 2SK518
Contextual Info: The export of these products from Japan is regulated by the Japanese government. The export of some or all of these products may be prohibited without governmental license. To export or re-export some or all of these products from a country other than Japan may also be prohibited without a license from that country. Please call

alternator diode 1776 B

Abstract: 2az marking transistor sot-23 SMD SOT23 transistor MARK Y2 ic mb4213 NEC 12F triac F10P048 ktc3114 equivalent SMD TRANSISTOR MARKING 02N DIODE PJ 57 ss14 BC517 equivalent
Contextual Info: Transistors Transistors Diodes Diodes Thyristors Thyristors SAW SAW Device Device Dielectric Dielectric Device Device Integrated Integrated Circuit Circuit Table of Contents Index 5 SMD Transistors Line-up PNP Transistors Transistors Line-up (NPN Transistors)

2sk2500

Abstract: UPC1037HA UPC648C 2SK927 NEC 2SK2500 uPD5201G UPA64HA UPD6360C 2SH24 n13t1
Contextual Info: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社

pa1476h

Abstract: pa80c PA1501H pa1437h PA1478H PA1556A pa1428ah PA2981 PA571T PA1556AH
Contextual Info: CD-ROM版トランジスタ CD-ROM X13769XJ2V0CD00 08−1 トランジスタ パッケージ別早見表 • TO-92形トランジスタ V TO–92 CEO V ~15 ~30 ~50 ~70 ~100 ~150 ~200 ~250 2SA1376 2SA1376A 2SC3478 2SC3478A 2SA1544 ~400 IC (A) ~20 m 2SC1674

uPD16305

Abstract: uPD63724A upc5024 UPC5023 2SC1940 uPC1237 uPD65656 UPC458 UPC2710 UPD65943
Contextual Info: Search by Product Name Find tool 1. Click the icon on the tool bar. 2. The find dialog box will be displayed. 3. Input the full product name or part of the product name to Find be located and click . 4. A characteristic table will be displayed if the retrieved product name is clicked.

2SA1444 equivalent

Abstract: BA1F4M transistor equivalent table POWER MOS FET 2sj 2sk 2sd882 equivalent Equivalent to transistor 2sc945 2SA1206 TRANSISTOR equivalent 2SC1845 equivalent 2SK type 2SD1694 equivalent
Contextual Info: CD-ROM Transistor CD-ROM X13769XJ2V0CD00 08-1 Transistor Quick Reference by Package TO–92 • TO-92 Type Transistor VCEO V ~15 ~30 ~50 ~70 ~100 ~150 ~200 ~250 2SA1376 2SA1376A 2SC3478 2SC3478A 2SA1544 ~400 IC (A) ~20 m 2SC1674 2SA1206∗∗ 2SA988 2SA992