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    5X105RAD Search Results

    5X105RAD Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    HX6408

    Contextual Info: Honeywell Advance information HX6408 512K x 8 STATIC RAM—SOI FEATURES RADIATION OTHER • Fabricated with RICMOS V Silicon on Insulator SOI 0.5 |im Process (Lef) = 0.4 pm) • Read/Write Cycle Times <25 ns (-55 to 125°C) • Total Dose Hardness >5x105rad(Si02)


    OCR Scan     		HX6408 5x105rad 1x109 1x101 40-Lead D2888 3Q172S HX6408 PDF

    1A15

    Abstract: honeywell hr 20 HLX6408
    Contextual Info: Honeywell Advance Information 512K x 8 STATIC RAM—SOI HLX6408 FEATURES RADIATION OTHER • Fabricated with RICMOS IV Silicon on Insulator SOI 0.5 |im Process (LeH= 0.4 |im) • Read/Write Cycle Times < 20 ns (Typical) ¿25 ns (-55 to 125°C) • Total Dose Hardness through 5x105rad(Si02)


    OCR Scan     		5x105rad 1x101 HLX6408 1x109 40-Lead 1A15 honeywell hr 20 HLX6408 PDF

    900198

    Abstract: HX6408 si02 1a15
    Contextual Info: Honeywel Advance Information 512K x 8 STATIC RAM—SOI HX6408 FEATURES RADIATION OTHER • Fabricated with RICMOS V Silicon on Insulator SOI 0.5 |a,m Process (Leff = 0.4 |a,m) • Read/Write Cycle Times < 2 5 ns (-55 to 125°C) • Total Dose Hardness >5x105rad(S i02)


    OCR Scan     		5x105rad 1x109 1x101 40-Lead HX6408 900198 HX6408 si02 1a15 PDF

    NSL 32 equivalent

    Abstract: AVW smd AVW smd transistor
    Contextual Info: Honeywell Aerospace Electronics Advance Information 512K x 8 STATIC RAM—SOI HX6408 FEATURES RADIATION OTHER • • Read/Write Cycle Times < 20 ns, 3.3 V , 0 to 80°C < 25 ns, (3.3 V), -55 to 125°C Fabricated with RICMOS V Silicon On Insulator (SOI) 0.35 [im Process (Left = 0.28 |im)


    OCR Scan     		36-Lead HX6408 5x105rad 1x101 NSL 32 equivalent AVW smd AVW smd transistor PDF