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hitachi mosfet power amplifier audio application

Abstract: 2SK215 equivalent PM4550C 2sd667 2sb647 2SD667 equivalent 2SJ99 K429 HITACHI 2SJ56 k399 Hitachi 2sk176 2sj56
Contextual Info: APPLICATION NOTE 1-9 Pov/er MOS FET • ' Bo* 3 V•? * ¿ 'S r ^ m is y 701 S ! Reo N o 64 1688 07 P O BO X 1194. R A N D tíU R G , 2 1 2 5 M F K E N T H O US E D O V E R S T R E E T . R A N D B U R G T V L , 21 9 4 0 1 1 7 8 9 1 4 0 0 /2 T E L E X 4 -2 0 4 5 2 F A X 1 0 1 1 )7 8 7 0 2 6 3

Contextual Info: TOSHIBA 2SC3006 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC3QQ6 Weight : 1.9g ELECTRICAL CHARACTERISTICS Tc = 25°C SYMBOL TEST CONDITION CHARACTERISTIC Collector Cut-off Current !CBO VCB = 15V, IE = 0 Collector-Base Breakdown Voltage V(BR)CBO I q = 2mA, I e = 0

Contextual Info: TO SHIBA 2SC2643 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC 2643 UHF BAND POWER AMPLIFIER APPLICATIONS U n it in mm Output Power : Po = 25W Min. (f= 470MHz, V çc = 12.6V, Pi = 8W) MAXIMUM RATINGS (Tc = 25°C) UNIT V V V vebo A 1. EMITTER ic

Contextual Info: TOSHIBA 2SC2642 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2642 Unit in mm UHF BAND POWER AMPLIFIER APPLICATIONS. Output Power : Po = 12W Min. (f= 470MHz, VCC = 12.6V, Pi = 3W) MAXIMUM RATINGS (Tc = 25°C) UNIT V V V 1. EMITTER A 2. BASE 3. EMITTER

Contextual Info: TOSHIBA 2SC2643 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2643 Unit in mm UHF BAND POWER AMPLIFIER APPLICATIONS. Output Power : Po = 25W Min. (f= 470MHz, V C C = 12*6V, Pi = 8W) MAXIMUM RATINGS (Tc = 25°C) CHARACTERISTIC Collector-Base Voltage