600 DIODE SMD Search Results

Contextual Info: IDD15E60 Fast Switching EmCon Emitter Diode Controlled Diode Product Summary Feature VRRM 600 V IF 15 A VF 1.5 V T jmax 175 °C 600VV Emitter • 600 EmConControlled technologytechnology • Fast recovery • Soft switching • Low reverse recovery charge

Contextual Info: IDB45E60 Fast Switching Switching EmCon Emitter Diode Controlled Diode Product Summary Feature • 600V 600 VEmitter EmConControlled technologytechnology • Fast recovery • Soft switching • Low reverse recovery charge VRRM 600 V IF 45 A VF 1.5 V T jmax

Contextual Info: IDB15E60 Fast Switching Switching EmCon Emitter Diode Controlled Diode Product Summary Feature • 600 EmConControlled technologytechnology 600VV Emitter • Fast recovery • Soft switching • Low reverse recovery charge VRRM 600 V IF 15 A VF 1.5 V T jmax

Contextual Info: IDB30E60 Fast Switching EmCon Emitter Diode Controlled Diode Product Summary Feature 600VV Emitter • 600 EmConControlled technologytechnology • Fast recovery • Soft switching • Low reverse recovery charge VRRM 600 V IF 30 A VF 1.5 V T jmax 175 °C

Contextual Info: IDB23E60 Fast Switching EmCon Emitter Diode Controlled Diode Product Summary Feature 600VV Emitter • 600 EmConControlled technologytechnology • Fast recovery • Soft switching • Low reverse recovery charge VRRM 600 V IF 23 A VF 1.5 V T jmax 175 °C

Contextual Info: IDD15E60 Fast Switching EmCon Emitter Diode Controlled Diode Product Summary Feature • 600 EmConControlled technologytechnology 600VV Emitter • Fast recovery • Soft switching • Low reverse recovery charge VRRM 600 V IF 15 A VF 1.5 V T jmax 175 °C

Contextual Info: IDB09E60 Fast Switching EmCon Emitter Diode Controlled Diode Product Summary VRRM Feature 600VV Emitter • 600 EmConControlled technologytechnology 600 V IF 9 A VF 1.5 V T jmax 175 °C • Fast recovery • Soft switching 2 • Low reverse recovery charge

Contextual Info: IDB15E60 Fast Switching Switching EmCon Emitter Diode Controlled Diode Product Summary Feature VRRM 600 V IF 15 A VF 1.5 V T jmax 175 °C 600VV Emitter • 600 EmConControlled technologytechnology • Fast recovery 2 • Soft switching • Low reverse recovery charge

Contextual Info: IDB23E60 Fast Switching EmCon Emitter Diode Controlled Diode Product Summary Feature • 600 EmConControlled technologytechnology 600VV Emitter VRRM 600 V IF 23 A VF 1.5 V T jmax 175 °C • Fast recovery • Soft switching 2 • Low reverse recovery charge

Contextual Info: IDB30E60 Fast Switching Switching EmCon Emitter Diode Controlled Diode Fast Product Summary VRRM 600 V IF 30 A Feature VF 1.5 V • 600 EmConControlled technologytechnology 600VV Emitter T jmax 175 °C • Fast recovery • Soft switching 2 • Low reverse recovery charge

Contextual Info: IDD06E60 Fast Switching EmCon Emitter Diode Controlled Diode Product Summary Feature 600 V IF 6 A VF 1.5 V T jmax 175 °C VRRM • 600 EmConControlled technologytechnology 600VVEmitter • Fast recovery • Soft switching • Low reverse recovery charge • Low forward voltage

idd06e60

Abstract: D06E6
Contextual Info: IDD06E60 Fast Switching EmCon Emitter Diode Controlled Diode Product Summary VRRM Feature 600 V IF 6 A VF 1.5 V T jmax 175 °C • 600 EmConControlled technologytechnology 600VV Emitter • Fast recovery • Soft switching • Low reverse recovery charge • Low forward voltage

Contextual Info: IDB09E60 Fast Switching EmCon Emitter Diode Controlled Diode Product Summary Feature VRRM • 600 EmConControlled technologytechnology 600VV Emitter • Fast recovery • Soft switching • Low reverse recovery charge 600 V IF 9 A VF 1.5 V T jmax 175 °C PG-TO263-3-2

Contextual Info: IDB45E60 Fast Switching Switching EmCon Emitter Diode Controlled Diode Fast Product Summary Feature VRRM 600 V IF 45 A VF 1.5 V T jmax 175 °C • 600 EmConControlled technologytechnology 600VV Emitter • Fast recovery 2 • Soft switching • Low reverse recovery charge

DIODE 1000a

Abstract: D15E60 IDP15E60 IEC61249-2-21
Contextual Info: IDP15E60 Fast EmCon Diode Product Summary Features VRRM 600 V IF 15 A • Fast recovery VF 1.5 V • Soft switching T jmax 175 °C • 600 V diode technology • Low reverse recovery charge PG-TO220-2 • Low forward voltage • Easy paralleling • Pb-free lead plating; RoHS compliant

smd diode 46A

Abstract: IDP23E60 IEC61249-2-21 DIODE 1000a PG-TO220-2
Contextual Info: IDP23E60 Fast Switching Diode Product Summary Features • 600 V diode technology • Fast recovery • Soft switching • Low reverse recovery charge VRRM 600 V IF 23 A VF 1.5 V T jmax 175 °C PG-TO220-2 • Low forward voltage • Easy paralleling • Pb-free lead plating; RoHS compliant

D45E60

Abstract: INFINEON D45E60 DIODE 1000a IDP45E60 Diode 400V 5A fast recovery diode 400v 5A IEC61249-2-21 if45a 1000A diode switching DIODE 1000A
Contextual Info: IDP45E60 Fast Switching Diode Product Summary Features • 600 V diode technology • Fast recovery • Soft switching • Low reverse recovery charge VRRM 600 V IF 45 A VF 1.5 V T jmax 175 °C PG-TO220-2 • Low forward voltage • Easy paralleling • Pb-free lead plating; RoHS compliant

Diode smd code 9a

Abstract: diode MARKING CODE 18A D09E60 IDP09E60 IEC61249-2-21
Contextual Info: IDP09E60 Fast Switching Diode Product Summary Features VRRM • 600 V diode technology • Fast recovery • Soft switching • Low reverse recovery charge 600 V IF 9 A VF 1.5 V T jmax 175 °C PG-TO220-2 • Low forward voltage • Easy paralleling • Pb-free lead plating; RoHS compliant

diode 400V 6A

Abstract: D06E60 smd diode marking 6a 400v 3a low vf diode diode 6a 400v 6A SMD diode diode fast recovery 400V 3A 6A FAST DIODE IDP06E60 IEC61249-2-21
Contextual Info: IDP06E60 Fast Switching Diode Product Summary Features VRRM • 600 V diode technology 600 V IF 6 A • Fast recovery VF 1.5 V • Soft switching T jmax 175 °C • Low reverse recovery charge PG-TO220-2 • Low forward voltage • Easy paralleling • Pb-free lead plating; RoHS compliant

24N60AU

Abstract: ixsh24n60au1 24n60au1 TO-247 weight
Contextual Info: DIXYS HiPerFAST IGBT with Diode IXSH 24N60U1 IXSH 24N60AU1 v CES ^C25 VCE sat 600 V 600 V 48 A 48 A 2.2 V 2.7 V Short Circuit SOA Capability Tj = 25° C to 150° C Tj = 25°C to 150°C; RGE= 1 Mi2 600 600 V V V6ES v GEM Continuous Transient 120 ±30 V

d06s60

Abstract: diode schottky 600v T-1228 SDB06S60 SDP06S60 smd diode marking code UJ
Contextual Info: SDB06S60 thinQ!¥ SiC Schottky Diode Silicon Carbide Schottky Diode • Worlds first 600V Schottky diode Product Summary • Revolutionary semiconductor V 600 VRRM material - Silicon Carbide • Switching behavior benchmark Qc 21 nC • No reverse recovery

smd diode marking code UJ

Abstract: Q67040-S4370
Contextual Info: SDB06S60 thinQ! SiC Schottky Diode Silicon Carbide Schottky Diode • Worlds first 600V Schottky diode Product Summary • Revolutionary semiconductor V 600 VRRM material - Silicon Carbide • Switching behavior benchmark Qc 21 nC • No reverse recovery

D06S60

Abstract: Q67040-S4370 P-TO263-3-2 T-1228 SDB06S60 SDP06S60 smd schottky diode marking 6a
Contextual Info: SDB06S60 thinQ!¥ SiC Schottky Diode Silicon Carbide Schottky Diode • Worlds first 600V Schottky diode Product Summary • Revolutionary semiconductor V 600 VRRM material - Silicon Carbide • Switching behavior benchmark Qc 21 nC • No reverse recovery

mj 340

Abstract: MJ340 50n60 50N60AU1 IXSX50N60AU1 IXSX50N60AU1S
Contextual Info: Preliminary data VCES = 600 V IXSX50N60AU1 = 75 A IXSX50N60AU1S I C25 VCE sat = 2.7 V IGBT with Diode Combi Pack Short Circuit SOA Capability Symbol TO-247 Hole-less SMD (50N60AU1S) Test Conditions C (TAB) G Maximum Ratings E VCES TJ = 25°C to 150°C 600