1999IXYS Search Results

Contextual Info: aixYs Dimensions in inch and [mm] 1 " = 25.4 mm 0.04Q[l .02] KS7 G O.MflQ.023 0.259(6.58] 0.021 [0.52] {g U o JX53 G t 0.029 [0.7+] — - 0.173 ¡4.39] 0.048 [1 . 2 ii SQ , U 3 961 :.m i 0.35' :391] 1999IXYS All rights reserved J- 7 Dimensions in inch and [mm] (1" = 25.4 mm)

7N60B

Contextual Info: nixYS AdvancedTechnical Information HiPerFAST IGBT V ¥ ces IXGA 7N60B IXGP 7N60B 600 V 14 A 1.5 V 150 ns ^C25 VCE sat typ % Maximum Ratings Symbol Test Conditions VCES Tj = 25°C to 150°C 600 V V CGR T,J = 25°C to 150°C; RGE = 1 MD 600 V VGES Continuous

IXFN180N20

Contextual Info: BIXYS AdvancedTechnical Information HiPerFET Power MOSFETs Single Die MOSFET IXFN 180N20 v DSS ^D25 P DS on *rr N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Symbol Test Conditions VDSS Tj =25°Cto150°C 200 V VD0R Tj = 25° C to 150° C; RGS= 1 M ii

Contextual Info: VDSS HiPerFET Power MOSFETs IXFH/IXFT/IXFX14N100 IXFH/IXFT/IXFX15N100 p ^D25 DS on 1000 V 14 A 0.75 Q 1000 V 15 A 0.70 ß trr <200 ns N-Channel Enhancement Mode High dv/dt, Low trr, HDMOS™ Family Preliminary data sheet Symbol Test Conditions v TJ Maximum Ratings

Contextual Info: High Voltage MOSFET IXTA2N100 IXTP2N100 N-Channel Enhancement Mode v DSS ^D25 P DS on =1000 V =2A =7Q 9 Symbol Test Conditions V ¥ dss Tj =25°Cto150°C 1000 V VDGR Tj = 25° C to 150° C; RGS= 1 MQ 1000 V Continuous i2 0 V Transient 130 V VGS v GSM ^D25

60N60

Contextual Info: IXGH 60N60 IXGK 60N60 IXGT 60N60 Ultra-Low VCE sat IGBT VCES ^C25 V C E(sat) V A V 600 75 1.6 Preliminary data sheet Symbol Test Conditions Maximum Ratings VCES T j = 2 5 °C to 150°C 600 V Vcon T,J = 2 5 ° C to 15 0 °C; R„_ be = 1 MO 600 V v GES Continuous

Contextual Info: a ix Y S Advanced Technical Information IXGH 32N60CD1 VCES IC25 HiPerFAST IGBT with Diode V CE SAT typ Light Speed Series Symbol t f1(typ) Test Conditions Maximum Ratings =25° C to 150° C 600 V T, : 25°C to 150°C: FL 600 V Continuous ±20 V Transient

IXFX120N20

Contextual Info: nixYs HiPerFET Power MOSFETs IXFX120N20 VDSS = lD25 = ^DS on = Single M O S F E T Die ^ trr <250 ns 9D Preliminary data sheet 200V 120A v p « Symbol Test Conditions V vDGB Tj =25°Cto150°C Tj = 25° C to 150° C; RGS = 1 Mi2 200 200 V V v as vGSM Continuous

DWEP

Contextual Info: Fast Recovery Epitaxial Diodes FRED Chips VRRM min Type mA u TJ= 12S-C v .-w v * , mA DWEP 27 -02 DWEP 37 -02 DWEP 77 -02 200 100 150 500 0.2 0,35 0.65 5 11 20 54 91 244 85 70 70 DWEP DWEP DWEP DWEP DWEP DWEP DWEP DWEP 8 12 15 23 25 35 55 75 -06 -06 -06 -06

60N60A

Abstract: c5021-0
Contextual Info: ÖIXYS HiPerFAST IGBT with Diode IXGK 50N60AU1 V CES ^C25 V CE sat tfi Symbol Test Conditions V „„ T 25° C to 150° C T, 2 5 °C to 1 5 0 °C ;F L Maximum Ratings 600 V 600 V Continuous +20 V Transient +30 V T c = 25° C, limited by leads 75 A ^C90

Contextual Info: FRED, Rectifier Diode and Thyristor Chips in Planar Design Fast Recovery Epitaxial Diodes FRED Rectifier Diode and Thyristor Chips Power switches (IGBT, MOSFET, BJT, GTO) for applications in electronics are only as good as their associated free-wheeling

30N60BD

Contextual Info: nixYS Advanced Technical Information HiPerFAST IGBT with Diode IXGH 30N60BD1 IXGT 30N60BD1 ^fi typ Symbol Test Conditions VCEs Tj = 25°Cto 150UC 600 V v CGB T,J = 25cC to 150°C ;R Cat =1 MU 600 V v G ES Continuous +20 V VG EM Transient ±30 V ^C25 Tc =25°C

IXYS DS 145 12A

Abstract: IXYS DS 145 ld12a
Contextual Info: n ix Y S IXFH15N80Q IXFT15N80Q HiPerFET Power MOSFETs DSS = DS on = ID25 P Q Class 800 V 15 A 0.60 Q trr < 250 ns N-Channel Enhancement Mode Avalanche Rated High dv/dt, Low Qg Preliminary data sheet Symbol Test Conditions V VoCR Tj = 25°Cto 150°C T,J = 25°Cto 150°C; RGS

IXTN 36N50 C

Abstract: ixys ixth 21N50 mosfet irfp 250 N c226 C278 C2100 13N110 C258 IRFP ixys ixtn 36n50
Contextual Info: n ix Y S Standard UOSFET T-Series \ Contents v DSS max ^D^cont C= 25 °C TO-247 □ DS on) Tc = 25 °C TO-220 (IXTP) TO-263 (IXTA) TO-264 miniBLOC (DON) Page ♦ V A £i 100 67 75 0.025 0.02 IXTH 67N10 IXTH 75N10 C2-4 200 30 0.085 IRFP 250 C2-8 50 0.045 IXTH 50N20

IXFK110N20

Abstract: 20n20 IXFN120N20 IXFK120N20
Contextual Info: •1IXYS_ ^ m ^ VDSS HiPerFET Power MOSFET IXFN 120N20 IXFN 110N20 IXFK 120N20 IXFK 110N20 Single MOSFET Die Symbol Test Conditions Maximum Ratings IXFK IXFN IXFN 120 110 120 IXFK 110 v DSS TO-264 AA IXFK ?D VoCR Tj = 25°C to 150°C

IC2560-0

Contextual Info: DIXYS IGBT with Diode IXSN 62N60U1 VCES 600 V 90 A 2.5 V IC25 v CE sat Short Circuit SOA Capability G é i t> E Maximum Ratings Symbol Test Conditions VCES Tj = 25° C to 150° C 600 V vCGR T,J = 25° C to 150°C; R(a„c = 1 Mi2 600 A VGES Continuous ±20

q5t3

Contextual Info: HiPerFAST IGBT with Diode IXGH 32N60AU1 ’ CES ^C25 v CE sat tfi Symbol Test Conditions V CES T j = 2 5 ; C to 1 5 0 C 600 V VCGR T,J = 25° C to 150° C; FLC = 1 Mi2 Gt 600 V V GES Continuous ±20 V VGEM Transient +30 V ^C2S 'c90 Maximum Ratings T c = 2 5 °C

Contextual Info: Ultra-Low VCE sat IGBT VCES IXGN 60N60 ^C25 VCE(sat) 600 V 100 A 1.6 V Preliminary data sheet Symbol Test Conditions Maximum Ratings VcES T j =2 5°C to 15 0 cC 600 V v CGR T,J = 25°C to 150°C; R(jfc = 1 MO 600 V VGES Continuous ±20 V VGEM Transient +30

Contextual Info: HiPerFET Power MOSFETs ix f n 200N07 Maximum Ratings Tj = 25° C to 150° C Tj = 25°C to 150°C; RGS= 1 Mi2 Va, VGSM ^0130 U EAR 70 70 V V Continuous Transient ±20 ±30 V V Tc= 25° C Tc= 130° C, limited by external leads Tc= 25° C, pulse width limited by TJM

24N60AU

Abstract: ixsh24n60au1 24n60au1 TO-247 weight
Contextual Info: DIXYS HiPerFAST IGBT with Diode IXSH 24N60U1 IXSH 24N60AU1 v CES ^C25 VCE sat 600 V 600 V 48 A 48 A 2.2 V 2.7 V Short Circuit SOA Capability Tj = 25° C to 150° C Tj = 25°C to 150°C; RGE= 1 Mi2 600 600 V V V6ES v GEM Continuous Transient 120 ±30 V

2SN100

Abstract: 25N100
Contextual Info: IGBT IXGH 25N100 IXGH 25N100A L O W V CE S* High speed Maximum Ratings Symbol Test Conditions VCES T j = 25° C to 150° C 1000 V T,J = 25° C to 150° C; FLr bt: = 1 M ft 1000 V v* GES Continuous +20 V VGEM Transient ±30 V ^C25 Tc =25°C 50 A ^C90 T c = 90° C

Contextual Info: BIXYS IXGX 50N60AU1 HiPerFAST IGBT with Diode 600 V 75 A 2.7 V 275 ns CES ^C25 v* CE sat t'fi Preliminary data Maximum Ratings Symbol Test Conditions VC E S T j = 25cCto 150°C 600 V v CGR T,J = 25° C to 150° C; RG„L = 1 MQ 600 V VGES Continuous ±20

Contextual Info: n ixY S Hi Per FAST IGBT IXGN 50N60B V CES [ C25 vCE sat Maximum Ratings Symbol Test Conditions V CES T j = 25° C to 150° C 600 V Vcc T, 600 V v GES V GEM Continuous 120 V T ransient -t30 V ^C25 Tc = 25°C 75 A '« O Tc =90°C 50 A ^CM Tc = 25° C, 1 ms

IXFK34N80

Contextual Info: nixYS Advanced Technical Information HiPerFET Power MOSFETs IXFK 34N80 IXFX 34N80 Test Conditions V DSS VDon Tj =25°Cto150°C Tj = 25° C to 150° C; RGS= 1 Mi2 800 800 V V Vas v GSM Continuous Transient ±20 ±30 V V Tc = 25° C MOSFET chip capability