600S1R8AT Search Results
600S1R8AT Price and Stock
Kyocera AVX Components 600S1R8AT250XT4KCAP CER 1.8PF 250V C0G/NP0 0603 |
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600S1R8AT250XT4K | Cut Tape | 12,033 | 1 |
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600S1R8AT250XT4K | Reel | 12 Weeks | 4,000 |
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600S1R8AT250XT4K |
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600S1R8AT250XT4K | 4,000 |
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Kyocera AVX Components 600S1R8AT250XTCAP CER 1.8PF 250V C0G/NP0 0603 |
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600S1R8AT250XT | Reel | 2,000 |
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600S1R8AT250XT | Reel | 12 Weeks | 2,000 |
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600S1R8AT250XT | 3,491 |
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600S1R8AT250XT | 1,000 |
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600S1R8AT250XT | 2,000 |
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Kyocera AVX Components 600S1R8AT250XS25MLC 600 - Tape and Reel (Alt: 600S1R8AT250XS25) |
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600S1R8AT250XS25 | Reel | 12 Weeks | 25 |
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Kyocera AVX Components 600S1R8ATN250TMLC 600 - Tape and Reel (Alt: 600S1R8ATN250T) |
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600S1R8ATN250T | Reel | 12 Weeks | 2,000 |
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600S1R8ATN250T |
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Kyocera AVX Components 600S1R8AT250T4KMLC 600 - Tape and Reel (Alt: 600S1R8AT250T4K) |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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600S1R8AT250T4K | Reel | 12 Weeks | 4,000 |
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600S1R8AT250T4K |
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600S1R8AT Datasheets (1)
Part | ECAD Model | Manufacturer | Description | Curated | Datasheet Type | |
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600S1R8AT250XT | American Technical Ceramics | Ceramic Capacitors, Capacitors, CAP CER 1.8PF 250V NP0 0603 | Original |
600S1R8AT Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: Document Number: MW5IC2030N Rev. 8, 5/2006 Freescale Semiconductor Technical Data RF LDMOS Wideband Integrated Power Amplifiers The MW5IC2030N wideband integrated circuit is designed with on - chip matching that makes it usable from 1930 to 1990 MHz. This multi - stage |
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MW5IC2030N MW5IC2030N MW5IC2030NBR1 MW5IC2030GNBR1 | |
600S3R9ATContextual Info: Freescale Semiconductor Technical Data MW5IC2030M Rev. 4, 3/2005 RF LDMOS Wideband Integrated Power Amplifiers The MW5IC2030 wideband integrated circuit is designed for base station applications. It uses Freescale’s newest High Voltage 26 to 28 Volts LDMOS |
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MW5IC2030M MW5IC2030 IS-95 MW5IC2030NBR1 MW5IC2030GNBR1 MW5IC2030MBR1 MW5IC2030GMBR1 600S3R9AT | |
IC 406Contextual Info: MOTOROLA Order this document by MW5IC2030M/D SEMICONDUCTOR TECHNICAL DATA The Wideband IC Line RF LDMOS Wideband Integrated Power Amplifiers The MW5IC2030 wideband integrated circuit is designed for base station applications. It uses Motorola’s newest High Voltage 26 to 28 Volts LDMOS IC |
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MW5IC2030M/D MW5IC2030 MW5IC2030MBR1 MW5IC2030GMBR1 IC 406 | |
A113
Abstract: AN1955 AN1987 MW5IC2030GMBR1 MW5IC2030M MW5IC2030MBR1 MW5IC2030NBR1 600s3r9at
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MW5IC2030M MW5IC2030NBR1 MW5IC2030 MW5IC2030MBR1 MW5IC2030GMBR1 A113 AN1955 AN1987 MW5IC2030GMBR1 MW5IC2030M 600s3r9at | |
Contextual Info: Document Number: MW5IC2030M Freescale Semiconductor Rev. 6, 1/2006 Replaced by MW5IC2030NBR1 GNBR1 . There are no form, fit or function changes with this Technical Data part replacement. N suffix added to part number to indicate transition to lead - free terminations. |
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MW5IC2030M MW5IC2030NBR1 MW5IC2030 MW5IC2030MBR1 MW5IC2030GMBR1 | |
Contextual Info: Freescale Semiconductor Technical Data Rev. 3, 1/2005 RF LDMOS Wideband Integrated Power Amplifiers The MW5IC2030 wideband integrated circuit is designed for base station applications. It uses Freescale’s newest High Voltage 26 to 28 Volts LDMOS IC technology and integrates a multi - stage structure. Its wideband On - Chip |
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MW5IC2030 885load* MW5IC2030MBR1 MW5IC2030GMBR1 | |
600S3R9AT
Abstract: GRM-215 Marking Z7 Gate Driver MOTOROLA LOT MARKINGS A113 AN1955 AN1987 MW5IC2030GNBR1 MW5IC2030NBR1 600S2R2AT
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MW5IC2030N MW5IC2030N MW5IC2030NBR1 MW5IC2030GNBR1 600S3R9AT GRM-215 Marking Z7 Gate Driver MOTOROLA LOT MARKINGS A113 AN1955 AN1987 MW5IC2030GNBR1 600S2R2AT | |
Contextual Info: T1G4020036-FL 2 x 120W Peak Power, 2 x24W Average Power, 36V DC – 3.5 GHz, GaN RF Power Transistor Applications • • • • • • Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers |
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T1G4020036-FL T1G4020036-FL | |
GF 215
Abstract: W1900
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MW5IC2030M MW5IC2030 MW5IC2030NBR1 MW5IC2030GNBR1 MW5IC2030MBR1 MW5IC2030GMBR1 MW5IC2030M GF 215 W1900 | |
A113
Abstract: AN1955 AN1987 MW5IC2030GMBR1 MW5IC2030MBR1
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MW5IC2030M/D MW5IC2030 MW5IC2030MBR1 MW5IC2030GMBR1 A113 AN1955 AN1987 MW5IC2030GMBR1 | |
Contextual Info: T1G4020036-FS 2 x 120W Peak Power, 2 x24W Average Power, 36V DC – 3.5 GHz, GaN RF Power Transistor Applications • • • • • • Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers |
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T1G4020036-FS T1G4020036-FS | |
Contextual Info: T1G4020036-FL 2 x 120W Peak Power, 2 x24W Average Power, 36V DC – 3.5 GHz, GaN RF Power Transistor Applications • • • • • • Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers |
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T1G4020036-FL T1G4020036-FL | |
MW5IC2030NBR1
Abstract: A113 AN1955 AN1987 MW5IC2030GNBR1 600S1R8AT 600s3r9at 1.5 j63 600S2
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MW5IC2030N MW5IC2030N MW5IC2030NBR1 MW5IC2030GNBR1 A113 AN1955 AN1987 MW5IC2030GNBR1 600S1R8AT 600s3r9at 1.5 j63 600S2 | |
Contextual Info: T1G4020036-FS 2 x 120W Peak Power, 2 x24W Average Power, 36V DC – 3.5 GHz, GaN RF Power Transistor Applications • • • • • • Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers |
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T1G4020036-FS T1G4020036-FS | |
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