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Kyocera AVX Components 600S5R6BT250XT CAP CER 5.6PF 250V C0G/NP0 0603
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	600S5R6BT250XT	Cut Tape	14,059		1	1 $1.98 10 $1.268 100 $0.889 1000 $0.68745 10000 $0.68745	Buy Now
	600S5R6BT250XT	Digi-Reel	14,059		1	1 $1.98 10 $1.268 100 $0.889 1000 $0.68745 10000 $0.68745	Buy Now
	600S5R6BT250XT	Reel	12,000		4,000	1 - 10 - 100 - 1000 - 10000 $0.58827	Buy Now
Avnet Americas	600S5R6BT250XT	Reel		12 Weeks	500	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Mouser Electronics	600S5R6BT250XT		88			1 $1.08 10 $0.801 100 $0.571 1000 $0.53 10000 $0.5	Buy Now
TTI	600S5R6BT250XT	Reel	1,000		500	1 - 10 - 100 - 1000 $0.525 10000 $0.5	Buy Now
Kyocera AVX Components 600S5R6AT250XT CAP CER 5.6PF 250V C0G/NP0 0603
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	600S5R6AT250XT	Cut Tape	10,682		1	1 $2.96 10 $1.931 100 $1.3866 1000 $1.09659 10000 $1.09659	Buy Now
	600S5R6AT250XT	Digi-Reel	10,682		1	1 $2.96 10 $1.931 100 $1.3866 1000 $1.09659 10000 $1.09659	Buy Now
	600S5R6AT250XT	Reel	8,000		4,000	1 - 10 - 100 - 1000 - 10000 $0.95266	Buy Now
Avnet Americas	600S5R6AT250XT	Reel		12 Weeks	2,000	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Mouser Electronics	600S5R6AT250XT		4,007			1 $1.93 10 $1.23 100 $0.98 1000 $0.88 10000 $0.61	Buy Now
Arrow Electronics	600S5R6AT250XT		2,000	12 Weeks	2,000	1 - 10 - 100 - 1000 - 10000 $0.8903	Buy Now
Richardson RFPD	600S5R6AT250XT				500	1 - 10 - 100 - 1000 $0.8 10000 $0.53	Buy Now
Kyocera AVX Components 600S5R6BW250XT CAP CER 5.6PF 250V C0G/NP0 0603
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	600S5R6BW250XT	Cut Tape	10,376		1	1 $0.86 10 $0.537 100 $0.3658 1000 $0.29364 10000 $0.29364	Buy Now
	600S5R6BW250XT	Digi-Reel	10,376		1	1 $0.86 10 $0.537 100 $0.3658 1000 $0.29364 10000 $0.29364	Buy Now
	600S5R6BW250XT	Reel	4,000		4,000	1 - 10 - 100 - 1000 - 10000 $0.29364	Buy Now
Avnet Americas	600S5R6BW250XT	Reel		12 Weeks	500	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Mouser Electronics	600S5R6BW250XT		1,168			1 $0.85 10 $0.48 100 $0.48 1000 $0.48 10000 $0.48	Buy Now
TTI	600S5R6BW250XT	Reel	2,000		500	1 - 10 - 100 - 1000 $0.472 10000 $0.294	Buy Now
Kyocera AVX Components 600S5R6CT250XT CAP CER 5.6PF 250V C0G/NP0 0603
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	600S5R6CT250XT	Cut Tape	5,849		1	1 $1.44 10 $0.902 100 $0.6203 1000 $0.47029 10000 $0.47029	Buy Now
	600S5R6CT250XT	Digi-Reel	5,849		1	1 $1.44 10 $0.902 100 $0.6203 1000 $0.47029 10000 $0.47029	Buy Now
	600S5R6CT250XT	Reel	4,000		4,000	1 - 10 - 100 - 1000 - 10000 $0.39595	Buy Now
Avnet Americas	600S5R6CT250XT	Reel		12 Weeks	2,000	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Mouser Electronics	600S5R6CT250XT		7,261			1 $0.94 10 $0.623 100 $0.451 1000 $0.403 10000 $0.341	Buy Now
TTI	600S5R6CT250XT	Reel			500	1 - 10 - 100 - 1000 $0.399 10000 $0.338	Buy Now
Richardson RFPD	600S5R6CT250XT				1,000	1 - 10 - 100 - 1000 $0.34 10000 $0.21	Buy Now
Kyocera AVX Components 600S5R6AW250XT CAP CER 5.6PF 250V NP0 0603
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	600S5R6AW250XT	Reel			4,000	1 - 10 - 100 - 1000 - 10000 $0.98283	Buy Now
Avnet Americas	600S5R6AW250XT	Reel		12 Weeks	2,000	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Mouser Electronics	600S5R6AW250XT		820			1 $2.27 10 $1.75 100 $1.33 1000 $1.06 10000 $0.982	Buy Now
TTI	600S5R6AW250XT	Reel			500	1 - 10 - 100 - 1000 $1.06 10000 $1.04	Buy Now
Richardson RFPD	600S5R6AW250XT				2,000	1 - 10 - 100 - 1000 - 10000 $0.53	Buy Now

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600S5R6 Datasheets (6)

Part	Manufacturer	Description	Datasheet Type	PDF
600S5R6AT250XT	American Technical Ceramics	Ceramic Capacitors, Capacitors, CAP CER 5.6PF 250V NP0 0603	Original	PDF
600S5R6AW250XT	American Technical Ceramics	Ceramic Capacitors, Capacitors, CAP CER 5.6PF 250V NP0 0603	Original	PDF
600S5R6BT250XT	American Technical Ceramics	Ceramic Capacitors, Capacitors, CAP CER 5.6PF 250V NP0 0603	Original	PDF
600S5R6BW250XT	American Technical Ceramics	Ceramic Capacitors, Capacitors, CAP CER 5.6PF 250V NP0 0603	Original	PDF
600S5R6CT250XT	American Technical Ceramics	Ceramic Capacitors, Capacitors, CAP CER 5.6PF 250V NP0 0603	Original	PDF
600S5R6CW250XT	American Technical Ceramics	Ceramic Capacitors, Capacitors, CAP CER 5.6PF 250V NP0 0603	Original	PDF

600S5R6 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: TGF2819-FL 100W Peak Power, 20W Average Power, 32V DC – 3.5 GHz, GaN RF Power Transistor Applications • • • • • • Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers	Original	PDF	TGF2819-FL TGF2819-FL
NE552R479A Abstract: mch215f104z 0X00 GSM1900 MCH185A101JK NE552R479A-T1A-A 433 mhz rf power amplifier module efficiency Text: NEC's 3.0 V, 0.25 W L&S-BAND NE552R479A MEDIUM POWER SILICON LD-MOSFET OUTLINE DIMENSIONS Units in mm FEATURES • LOW COST PLASTIC SURFACE MOUNT PACKAGE PACKAGE OUTLINE 79A • HIGH OUTPUT POWER: +26 dBm TYP at VDS = 3.0 V (Bottom View) A Gate 1.2 MAX.	Original	PDF	NE552R479A NE552R479A mch215f104z 0X00 GSM1900 MCH185A101JK NE552R479A-T1A-A 433 mhz rf power amplifier module efficiency
mch215f104zp Abstract: J50 mosfet ne552r GSM1900 MCH185A101JK NE552R479A NE552R479A-T1A 0805CG 433 mhz rf power amplifier module efficiency 9339 blk Text: NEC's 3.0 V, 0.25 W L&S-BAND NE552R479A MEDIUM POWER SILICON LD-MOSFET OUTLINE DIMENSIONS Units in mm FEATURES • LOW COST PLASTIC SURFACE MOUNT PACKAGE PACKAGE OUTLINE 79A • HIGH OUTPUT POWER: +26 dBm TYP at VDS = 3.0 V 1.5 ± 0.2 4.2 Source • HIGH LINEAR GAIN: 11 dB TYP @ 2.45 GHz	Original	PDF	NE552R479A NE552R479A 100mA 300mA mch215f104zp J50 mosfet ne552r GSM1900 MCH185A101JK NE552R479A-T1A 0805CG 433 mhz rf power amplifier module efficiency 9339 blk
Untitled Abstract: No abstract text available Text: RFPA5026 4.9GHz to 5.9GHz 2W InGaP AMPLIFIER RFPA5026 Proposed 4.9GHz TO 5.9GHz 2W InGaP AMPLIFIER Package: QFN, 6-pin, 5.59mm x 6.23mm x 0.85mm Vcc Features RFPA5026  P1dB =33dBm at 5V  802.11g 54Mb/s Class AB Performance  POUT =25dBm at 2.5% EVM,	Original	PDF	RFPA5026 33dBm 54Mb/s 25dBm 680mA DS120110
DCS1800 Abstract: NE5520279A NE5520279A-T1 Text: NEC'S 3.2 V, 2 W, L&S BAND NE5520279A MEDIUM POWER SILICON LD-MOSFET FEATURES OUTLINE DIMENSIONS Units in mm • LOW COST PLASTIC SURFACE MOUNT PACKAGE: 5.7x5.7x1.1 mm MAX PACKAGE OUTLINE 79A (Bottom View) Source • SINGLE SUPPLY: 2.8 to 6.0 V 0.8±0.15	Original	PDF	NE5520279A 0X001 NE5520279A HS350-P3 DCS1800 NE5520279A-T1
Untitled Abstract: No abstract text available Text: SZP-5026Z 4.9GHz to 5.9GHz 2W InGaP Amplifier SZP-5026Z Preliminary 4.9GHz to 5.9GHz 2W InGaP AMPLIFIER RFMD Green, RoHS Compliant, Pb-Free Package: Proprietary SOF-26 Product Description Features RFMD’s SZP-5026Z is a high-linearity, single-stage, class AB Heterojunction Bipolar	Original	PDF	SZP-5026Z SOF-26 SZP-5026Z SZP-5026Z-EVB1 SZP-5026Z-EVB2 15GHz 35GHz EDS-105366
SOF-26 Abstract: SZP-5026 SZP-5026Z 5.7Ghz low noise amplifier 600S4R7 Text: SZP-5026Z SZP-5026Z 4.9GHz to 5.9GHz 2W InGaP Amplifier 4.9GHz to 5.9GHz 2W InGaP AMPLIFIER Package: Proprietary SOF-26 Product Description Features RFMD’s SZP-5026Z is a high-linearity, single-stage, class AB Heterojunction Bipolar Transistor HBT power amplifier. It is designed with InGaP-on-GaAs device technology and fabricated with MOCVD for an ideal combination of low cost and high reliability. This product is specifically designed for use as a driver or final stage power	Original	PDF	SZP-5026Z SOF-26 SZP-5026Z SZP-5026Z-EVB1 SZP-5026Z-EVB2 15GHz 35GHz EDS-105366 SOF-26 SZP-5026 5.7Ghz low noise amplifier 600S4R7
Untitled Abstract: No abstract text available Text: T1G4004532-FS 45W, 32V DC – 3.5 GHz, GaN RF Power Transistor Applications • • • • • • Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers Jammers Product Features	Original	PDF	T1G4004532-FS T1G4004532-FS TQGaN25
600S4R7 Abstract: 600S0R5CW250 0805HQ-5N6XJBB Coilcraft 0805 e483 SZP-5026 ZO21 szp-5026z 600S5R6 600S4R7cw250 Text: SZP-5026Z SZP-5026Z 4.9GHz to 5.9GHz 2W InGaP Amplifier 4.9GHz to 5.9GHz 2W InGaP AMPLIFIER Package: Proprietary SOF-26 Product Description Features RFMD’s SZP-5026Z is a high-linearity, single-stage, class AB Heterojunction Bipolar Transistor HBT power amplifier. It is designed with InGaP-on-GaAs device technology and fabricated with MOCVD for an ideal combination of low cost and high reliability. This product is specifically designed for use as a driver or final stage power	Original	PDF	SZP-5026Z SZP-5026Z SOF-26 DS110620 SZP5026ZSQ SZP5026ZSR SZP5026Z SZP5026Z-EVB1 600S4R7 600S0R5CW250 0805HQ-5N6XJBB Coilcraft 0805 e483 SZP-5026 ZO21 600S5R6 600S4R7cw250
MCH18 Abstract: ZO13 0805HQ-5N6XJBB Text: RFPA5026 4.9GHz to 5.9GHz 2W InGaP AMPLIFIER RFPA5026 Proposed 4.9GHz TO 5.9GHz 2W InGaP AMPLIFIER Package: QFN, 6-pin, 5.59mm x 6.23mm x 0.85mm Vcc Features        RFPA5026 P1dB =33dBm at 5V 802.11g 54Mb/s Class AB Performance POUT =25dBm at 2.5% EVM,	Original	PDF	RFPA5026 RFPA5026 33dBm 54Mb/s 25dBm 680mA DS120110 MCH18 ZO13 0805HQ-5N6XJBB
SZP-5026-HWD Abstract: No abstract text available Text: SZP-5026Z SZP-5026Z 4.9GHz to 5.9GHz 2W InGaP Amplifier 4.9GHz to 5.9GHz 2W InGaP AMPLIFIER Package: Proprietary SOF-26 Product Description Features RFMD’s SZP-5026Z is a high-linearity, single-stage, class AB Heterojunction Bipolar Transistor HBT power amplifier. It is designed with InGaP-on-GaAs device technology and fabricated with MOCVD for an ideal combination of low cost and high reliability. This product is specifically designed for use as a driver or final stage power	Original	PDF	SZP-5026Z SZP-5026Z SOF-26 DS111220 SZP5026ZSQ SZP5026ZSR SZP5026Z SZP5026Z-EVB1 SZP-5026-HWD
Untitled Abstract: No abstract text available Text: RFPA5026 RFPA5026 4.9GHz to 5.9GHz 2W InGaP AMPLIFIER 4.9GHz TO 5.9GHz 2W InGaP AMPLIFIER Package: DFN, 6-pin, 5.59mm x 6.23mm x 0.85mm Vcc Features        RFPA5026 P1dB=33dBm at 5V 802.11g 54Mb/s Class AB Performance POUT =25dBm at 2.5% EVM,	Original	PDF	RFPA5026 RFPA5026 33dBm 54Mb/s 25dBm 680mA CH185A1R8DK MCH182CN104K
Untitled Abstract: No abstract text available Text: SZP-5026Z SZP-5026Z 4.9GHz to 5.9GHz 2W InGaP Amplifier 4.9GHz to 5.9GHz 2W InGaP AMPLIFIER Package: Proprietary SOF-26 Product Description Features RFMD’s SZP-5026Z is a high-linearity, single-stage, class AB Heterojunction Bipolar Transistor HBT power amplifier. It is designed with InGaP-on-GaAs device technology and fabricated with MOCVD for an ideal combination of low cost and high reliability. This product is specifically designed for use as a driver or final stage power	Original	PDF	SZP-5026Z SOF-26 SZP-5026Z DS111220 SZP5026ZSQ SZP5026ZSR SZP5026Z 15GHz
Untitled Abstract: No abstract text available Text: T1G4020036-FL 2 x 120W Peak Power, 2 x24W Average Power, 36V DC – 3.5 GHz, GaN RF Power Transistor Applications • • • • • • Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers	Original	PDF	T1G4020036-FL T1G4020036-FL

Untitled Abstract: No abstract text available Text: RFPA5026 4.9GHz to 5.9GHz 2W InGaP AMPLIFIER RFPA5026 Proposed 4.9GHz TO 5.9GHz 2W InGaP AMPLIFIER Package: QFN, 6-pin, 5.59mm x 6.23mm x 0.85mm Vcc Features        RFPA5026 P1dB=33dBm at 5V 802.11g 54Mb/s Class AB Performance POUT =25dBm at 2.5% EVM,	Original	PDF	RFPA5026 RFPA5026 33dBm 54Mb/s 25dBm 680mA MCH182CN104K 600S4R7CW250
mch215f104zp Abstract: mch215f104z J50 mosfet GSM1900 MCH185A101JK NE552R479A NE552R479A-T1A ATC0603 Text: NEC's 3.0 V, 0.25 W L&S-BAND NE552R479A MEDIUM POWER SILICON LD-MOSFET OUTLINE DIMENSIONS Units in mm FEATURES • LOW COST PLASTIC SURFACE MOUNT PACKAGE PACKAGE OUTLINE 79A • HIGH OUTPUT POWER: +26 dBm TYP at VDS = 3.0 V (Bottom View) • HIGH LINEAR GAIN: 11 dB TYP @ 2.45 GHz	Original	PDF	NE552R479A NE552R479A HS350-P3 mch215f104zp mch215f104z J50 mosfet GSM1900 MCH185A101JK NE552R479A-T1A ATC0603
SZP-5026 Abstract: 600s5r6cw250 5.7Ghz low noise amplifier SOF-26 SZP-5026Z MLCC rework recommended land pattern for 0402 cap e483 Text: SZP-5026Z SZP-5026Z 4.9GHz to 5.9GHz 2W InGaP Amplifier 4.9GHz to 5.9GHz 2W InGaP AMPLIFIER Package: Proprietary SOF-26 Product Description Features RFMD’s SZP-5026Z is a high-linearity, single-stage, class AB Heterojunction Bipolar Transistor HBT power amplifier. It is designed with InGaP-on-GaAs device technology and fabricated with MOCVD for an ideal combination of low cost and high reliability. This product is specifically designed for use as a driver or final stage power	Original	PDF	SZP-5026Z SOF-26 SZP-5026Z SZP5026Z SZP5026Z-EVB1 SZP5026Z-EVB2 15GHz 35GHz DS091202 SZP-5026 600s5r6cw250 5.7Ghz low noise amplifier SOF-26 MLCC rework recommended land pattern for 0402 cap e483
Untitled Abstract: No abstract text available Text: T1G4020036-FS 2 x 120W Peak Power, 2 x24W Average Power, 36V DC – 3.5 GHz, GaN RF Power Transistor Applications • • • • • • Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers	Original	PDF	T1G4020036-FS T1G4020036-FS
Untitled Abstract: No abstract text available Text: T1G4020036-FL 2 x 120W Peak Power, 2 x24W Average Power, 36V DC – 3.5 GHz, GaN RF Power Transistor Applications • • • • • • Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers	Original	PDF	T1G4020036-FL T1G4020036-FL
DCS1800 Abstract: NE5520279A NE5520279A-T1-A Text: NEC'S 3.2 V, 2 W, L&S BAND NE5520279A MEDIUM POWER SILICON LD-MOSFET FEATURES OUTLINE DIMENSIONS Units in mm • LOW COST PLASTIC SURFACE MOUNT PACKAGE: 5.7x5.7x1.1 mm MAX PACKAGE OUTLINE 79A (Bottom View) Source • SINGLE SUPPLY: 2.8 to 6.0 V Gate 1.2 MAX.	Original	PDF	NE5520279A 0X001 NE5520279A DCS1800 NE5520279A-T1-A
Untitled Abstract: No abstract text available Text: T1G4020036-FS 2 x 120W Peak Power, 2 x24W Average Power, 36V DC – 3.5 GHz, GaN RF Power Transistor Applications • • • • • • Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers	Original	PDF	T1G4020036-FS T1G4020036-FS
Untitled Abstract: No abstract text available Text: TGF2819-FS 100W Peak Power, 20W Average Power, 32V, DC – 3.5 GHz, GaN RF Power Transistor Applications • • • • • • Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers	Original	PDF	TGF2819-FS TGF2819-FS
CAP, 0603 4.7pF Abstract: SOF-26 SZP-5026 5.7Ghz low noise amplifier MCH184CN105K 802.11a Amplifier Schematics 5250 SZP-5026Z 600S5 Text: SZP-5026Z 4.9GHz to 5.9GHz 2W InGaP Amplifier SZP-5026Z Preliminary 4.9GHz to 5.9GHz 2W InGaP AMPLIFIER RFMD Green, RoHS Compliant, Pb-Free Package: Proprietary SOF-26 Product Description Features RFMD’s SZP-5026Z is a high-linearity, single-stage, class AB Heterojunction Bipolar	Original	PDF	SZP-5026Z SOF-26 SZP-5026Z SZP-5026Z-EVB1 SZP-5026Z-EVB2 15GHz 35GHz EDS-105366 CAP, 0603 4.7pF SOF-26 SZP-5026 5.7Ghz low noise amplifier MCH184CN105K 802.11a Amplifier Schematics 5250 600S5

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600S5R6 Price and Stock

Kyocera AVX Components 600S5R6BT250XT

Kyocera AVX Components 600S5R6AT250XT

Kyocera AVX Components 600S5R6BW250XT

Kyocera AVX Components 600S5R6CT250XT

Kyocera AVX Components 600S5R6AW250XT

600S5R6 Datasheets (6)

600S5R6 Datasheets Context Search

Untitled

NE552R479A

mch215f104zp

Untitled

DCS1800

Untitled

SOF-26

Untitled

600S4R7

MCH18

SZP-5026-HWD

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Untitled

Untitled

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mch215f104zp

SZP-5026

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DCS1800

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CAP, 0603 4.7pF