600V 20A POWER ELECTRONIC Search Results

Contextual Info: R6020ENJ Nch 600V 20A Power MOSFET Datasheet lOutline VDSS 600V RDS on (Max.) 0.196W ID 20A PD 40W (2) LPT(S) (SC-83) (1) (3) lFeatures lInner circuit 1) Low on-resistance. 3) Gate-source voltage (VGSS) guaranteed to be 30V. (1) Gate (2) Drain (3) Source

Contextual Info: R6020FNX Data Sheet Nch 600V 20A Power MOSFET lOutline VDSS 600V RDS on (Max.) 0.25W ID 20A PD 50W TO-220FM (1) (2) lFeatures (3) lInner circuit 1) Fast reverse recovery time (trr). 2) Low on-resistance. (1) Gate (2) Drain (3) Source 3) Fast switching speed.

Contextual Info: R6020FNX Nch 600V 20A Power MOSFET Datasheet lOutline VDSS 600V RDS on (Max.) 0.25W ID 20A PD 50W TO-220FM (1) (2) lFeatures (3) lInner circuit 1) Fast reverse recovery time (trr). 2) Low on-resistance. (1) Gate (2) Drain (3) Source 3) Fast switching speed.

mosfet 600V 20A

Abstract: L084 to220sis equivalent toshiba mosfet TK12J60U TK15A60U mosfet 12A 600V tk12d60u TK20A60U toshiba cmos memory camera
Contextual Info: TOSHIBA DTMOS II FAMILY OF 600V POWER MOSFETS USE SUPERJUNCTION. Page 1 of 3 TOSHIBA DTMOS II FAMILY OF 600V POWER MOSFETS USE SUPERJUNCTION STRUCTURE TO INCREASE POWER EFFICIENCY 12A, 15A, or 20A 600V MOSFETs in Second DTMOS Generation Utilize "Superjunction" Technology to Reduce

R6020ENX

Contextual Info: R6020ENX Nch 600V 20A Power MOSFET Datasheet lOutline VDSS 600V RDS on (Max.) 0.20W ID 20A PD 50W TO-220FM (1) (2) lFeatures (3) lInner circuit 1) Low on-resistance. (1) Gate (2) Drain (3) Source 2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed to be 30V.

Contextual Info: R6020ENJ Nch 600V 20A Power MOSFET Data Sheet lOutline VDSS 600V RDS on (Max.) 0.196W ID 20A PD 40W (2) LPT(S) (SC-83) (1) (3) lFeatures lInner circuit 1) Low on-resistance. 3) Gate-source voltage (VGSS) guaranteed to be 20V. (1) Gate (2) Drain (3) Source

Contextual Info: Advanced Power Electronics Corp. AP20GT60I-HF-3 N-Channel Insulated Gate Bipolar Power Transistor High Speed Switching VCES 600V IC 20A Low Saturation Voltage Typical V CE sat = 1.8V at IC=20A Isolated tab Industry-standard isolated package G RoHS-compliant, halogen-free

Contextual Info: R6020ENX Nch 600V 20A Power MOSFET Data Sheet lOutline VDSS 600V RDS on (Max.) 0.20W ID 20A PD 50W TO-220FM (1) (2) lFeatures (3) lInner circuit 1) Low on-resistance. (1) Gate (2) Drain (3) Source 2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed to be 20V.

R6020ENZ

Contextual Info: R6020ENZ1 Nch 600V 20A Power MOSFET Datasheet lOutline VDSS 600V RDS on (Max.) 0.196W ID 20A PD 120W TO-247 (1) (2) lFeatures (3) lInner circuit 1) Low on-resistance. 3) Gate-source voltage (VGSS) guaranteed to be 30V. (1) Gate (2) Drain (3) Source 4) Drive circuits can be simple.

R6020-ANX

Contextual Info: R6020ANX Datasheet Nch 600V 20A Power MOSFET Outline VDSS 600V RDS on (Max.) 0.22Ω ID 20A PD 50W TO-220FM (1)(2)(3) Features Inner circuit 1) Low on-resistance. (1) Gate (2) Drain (3) Source 2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed to be ±30V.

Contextual Info: R6020ENZ Nch 600V 20A Power MOSFET Datasheet lOutline VDSS 600V RDS on (Max.) 0.196W ID 20A PD 120W TO-3PF (1) (2) lFeatures (3) lInner circuit 1) Low on-resistance. 3) Gate-source voltage (VGSS) guaranteed to be 30V. (1) Gate (2) Drain (3) Source 4) Drive circuits can be simple.

Contextual Info: R6020ANX Nch 600V 20A Power MOSFET Datasheet Outline VDSS 600V RDS on (Max.) 0.22Ω ID 20A PD 50W TO-220FM (1)(2)(3) Features Inner circuit 1) Low on-resistance. (1) Gate (2) Drain (3) Source 2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed to be ±30V.

Contextual Info: R6020ENZ Nch 600V 20A Power MOSFET Data Sheet lOutline VDSS 600V RDS on (Max.) 0.196W ID 20A PD 120W TO-3PF (1) (2) lFeatures (3) lInner circuit 1) Low on-resistance. 3) Gate-source voltage (VGSS) guaranteed to be 20V. (1) Gate (2) Drain (3) Source 4) Drive circuits can be simple.

Contextual Info: R6020ENZ1 Nch 600V 20A Power MOSFET Data Sheet lOutline VDSS 600V RDS on (Max.) 0.196W ID 20A PD 120W TO-247 (1) (2) lFeatures (3) lInner circuit 1) Low on-resistance. 3) Gate-source voltage (VGSS) guaranteed to be 20V. (1) Gate (2) Drain (3) Source 4) Drive circuits can be simple.

20GT60P

Contextual Info: Advanced Power Electronics Corp. AP20GT60P-HF-3 N-Channel Insulated Gate Bipolar Power Transistor High Speed Switching VCES 600V IC 20A Low Saturation Voltage Typical V CE sat = 1.8V at IC=20A C (tab) G Industry-standard TO-220 package C C RoHS-compliant, halogen-free

ictc

Contextual Info: AP20GT60I RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR Features ▼ High Speed Switching ▼ Low Saturation Voltage VCE sat ,typ.=1.8V@IC=20A ▼ RoHS Compliant Product G C E VCES 600V IC 20A TO-220CFM(I)

Contextual Info: AP20GT60SW RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR Features C ▼ High Speed Switching ▼ Low Saturation Voltage VCE sat ,Typ.=1.8V@IC=20A ▼ Built-in Fast Recovery Diode VCES 600V IC 20A C G C

Contextual Info: AP20GT60W RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR Features C High Speed Switching Low Saturation Voltage VCE sat ,typ.=1.8V@IC=20A RoHS Compliant Product VCES 600V IC 20A C G C E E Absolute Maximum Ratings

Contextual Info: AP20GT60SW RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR Features C ▼ High Speed Switching ▼ Low Saturation Voltage V CE sat ,Typ.=1.8V@IC=20A ▼ Built-in Fast Recovery Diode VCES 600V IC 20A C G C

Contextual Info: AP20GT60W RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR Features C ▼ High Speed Switching ▼ Low Saturation Voltage VCE sat ,typ.=1.8V@IC=20A ▼ RoHS Compliant Product VCES 600V IC 20A C G C G TO-3P

Contextual Info: AP20GT60SW RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR Features C High Speed Switching Low Saturation Voltage VCE sat ,Typ.=1.8V@IC=20A Built-in Fast Recovery Diode VCES 600V IC 20A C C G E E Absolute Maximum Ratings

Contextual Info: AP20GT60P-HF Halogen-Free Product Advanced Power Electronics Corp. N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR Features High Speed Switching Low Saturation Voltage VCE sat ,typ.=1.8V@IC=20A G C E VCES 600V IC 20A TO-220(P) C RoHS Compliant & Halogen-Free G

20GT60W

Contextual Info: Advanced Power Electronics Corp. AP20GT60W-HF-3 N-Channel Insulated Gate Bipolar Power Transistor High Speed Switching VCES 600V IC 20A Low Saturation Voltage Typical V CE sat = 1.8V at IC=20A C (tab) G RoHS-compliant, halogen-free C C E G TO-3P (W) E Absolute Maximum Ratings

ap20gt60p

Contextual Info: AP20GT60P-HF Halogen-Free Product Advanced Power Electronics Corp. N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR Features ▼ High Speed Switching ▼ Low Saturation Voltage VCE sat ,typ.=1.8V@IC=20A G C E VCES 600V IC 20A TO-220(P) C ▼ RoHS Compliant & Halogen-Free