600V 75A MOSFET Search Results

Contextual Info: 10-FZ06NRA084FP02-P969F78 10-PZ06NRA084FP02-P969F78Y flow NPC 0 600V/75A & 99mΩ PS* Features flow 0 12mm housing ● *PS: 75A parallel switch 75A and 99mΩ MOSFET ● neutral point clamped inverter ● reactive power capability ● low inductance layout

IXXR110N60B4H1

Contextual Info: Advance Technical Information IXXR110N60B4H1 XPTTM 600V GenX4TM w/ Diode VCES IC110 VCE sat tfi(typ) (Electrically Isolated Tab) = = ≤ = 600V 75A 2.0V 27ns Extreme Light Punch Through IGBT for 5-30kHz Switching ISOPLUS247TM Symbol Test Conditions Maximum Ratings

75N60

Contextual Info: Preliminary Technical Information IXXH75N60B3D1 XPTTM 600V IGBT GenX3TM w/ Diode VCES IC110 VCE sat tfi(typ) Extreme Light Punch Through IGBT for 5-30 kHz Switching = = ≤ = 600V 75A 1.85V 125ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR

Contextual Info: Preliminary Technical Information XPTTM 600V IGBT GenX3TM w/ Diode VCES IC110 VCE sat tfi(typ) IXXH75N60B3D1 Extreme Light Punch Through IGBT for 5-30 kHz Switching = = ≤ = 600V 75A 1.85V 125ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR

375A1

Abstract: IXXH75N60C3
Contextual Info: Advance Technical Information IXXH75N60C3 XPTTM 600V IGBT GenX3TM VCES IC110 VCE sat tfi(typ) Extreme Light Punch Through IGBT for 20-60 kHz Switching = = ≤ = 600V 75A 2.2V 75ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 175°C

75N60B3D1

Abstract: IXXH75N60B3
Contextual Info: Advance Technical Information IXXH75N60B3 XPTTM 600V IGBT GenX3TM VCES IC110 VCE sat tfi(typ) Extreme Light Punch Through IGBT for 5-30 kHz Switching = = ≤ = 600V 75A 1.85V 125ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 175°C

Contextual Info: Advance Technical Information XPTTM 600V IGBT GenX3TM VCES IC110 VCE sat tfi(typ) IXXH75N60C3 Extreme Light Punch Through IGBT for 20-60 kHz Switching = = ≤ = 600V 75A 2.2V 75ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 175°C

75N60B3D1

Contextual Info: Advance Technical Information XPTTM 600V IGBT GenX3TM VCES IC110 VCE sat tfi(typ) IXXH75N60B3 Extreme Light Punch Through IGBT for 5-30 kHz Switching = = ≤ = 600V 75A 1.85V 125ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 175°C

75n60

Contextual Info: Preliminary Technical Information IXXH75N60C3 XPTTM 600V IGBT GenX3TM VCES IC110 VCE sat tfi(typ) Extreme Light Punch Through IGBT for 20-60 kHz Switching = = ≤ = 600V 75A 2.3V 75ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 175°C

Contextual Info: Preliminary Technical Information XPTTM 600V IGBT GenX3TM w/ Diode VCES IC110 VCE sat tfi(typ) IXXH75N60C3D1 Extreme Light Punch Through IGBT for 20-60 kHz Switching = = ≤ = 600V 75A 2.2V 75ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 175°C

75N60B3

Abstract: IXXH75N60B3D1 75n60
Contextual Info: Advance Technical Information IXXH75N60B3D1 XPTTM 600V IGBT GenX3TM w/ Diode VCES IC110 VCE sat tfi(typ) Extreme Light Punch Through IGBT for 5-30 kHz Switching = = ≤ = 600V 75A 1.85V 125ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 175°C

150-A54

Contextual Info: Advance Technical Information IXXH75N60C3D1 XPTTM 600V IGBT GenX3TM w/ Diode VCES IC110 VCE sat tfi(typ) Extreme Light Punch Through IGBT for 20-60 kHz Switching = = ≤ = 600V 75A 2.2V 75ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 175°C

IXXH75N60C3D1

Abstract: 75N60C3
Contextual Info: Preliminary Technical Information IXXH75N60C3D1 XPTTM 600V IGBT GenX3TM w/ Diode VCES IC110 VCE sat tfi(typ) Extreme Light Punch Through IGBT for 20-60 kHz Switching = = ≤ = 600V 75A 2.2V 75ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 175°C

ixgh48n60c3d1

Abstract: IXYS IXGH48N60C3D1 48N60C3D1 48N60 ixgh48n60c3d
Contextual Info: GenX3TM 600V IGBT with Diode VCES IC25 VCE sat tfi(typ) IXGH48N60C3D1 High speed PT IGBTs for 40-100kHz Switching = = ≤ = 600V 75A 2.5V 38ns TO-247(IXGH) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1MΩ

Contextual Info: 10-FZ06NRA075FU-P969F08 preliminary datasheet flowNPC 0 600V/ 75A Features flow0 12mm housing ● neutral point clamped inverter ● reactive power capability ● low inductance layout ● improved Low voltage write through capability Target Applications Schematic

G40N60

Abstract: g40n60c3d HGT1Y40N60C3D HGTG40N60C3 RHRP3060 TA49063 TA49389
Contextual Info: HGT1Y40N60C3D Data Sheet December 2001 75A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes The HGT1Y40N60C3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input

Contextual Info: 10-FZ06NRA084FP02-P969F78 10-PZ06NRA084FP02-P969F78Y NPC Application flowNPC 0 600V/75A & 99mΩ PS* General conditions BUCK = = = = VGEon VGEoff Rgon Rgoff + 15 V - 15 V 4Ω 4Ω Vout= 230 VAC Figure 1. Buck MOSFET+IGBT BOOST = = = = VGEon VGEoff Rgon Rgoff

Contextual Info: 10-FZ06NBA084FP-M306L48 preliminary datasheet flow Boost0 600V/84A PS* Features flow0 12mm housing ● *PS: 2x84A parallel switch 75A IGBT and 99mΩ C6 ● ultrafast IGBT with C6 MOSFET and SiC buck diodes ● symmetric booster ● ultra fast switching frequency

RHRU7540

Abstract: RHRU7550 RHRU7560
Contextual Info: RHRU7540, RHRU7550, RHRU7560 Data Sheet April 1995 File Number 3945.1 75A, 400V - 600V Hyperfast Diodes Features RHRU7540, RHRU7550 and RHRU7560 TA49067 are hyperfast diodes with soft recovery characteristics (tRR < 55ns). They have half the recovery time of ultrafast

RHRU7540

Abstract: RHRU7550 RHRU7560
Contextual Info: RHRU7540, RHRU7550, RHRU7560 Data Sheet April 1995 File Number 3945.1 75A, 400V - 600V Hyperfast Diodes Features RHRU7540, RHRU7550 and RHRU7560 TA49067 are hyperfast diodes with soft recovery characteristics (tRR < 55ns). They have half the recovery time of ultrafast

Contextual Info: FZ06NPA070FP01 preliminary datasheet flowNPC 0 600V/75A & 70A PS* Features flow0 12mm housing ● *PS: 70A parallel switch 60A PT and 99mΩ ● neutral point clamped inverter ● reactive power capability ● low inductance layout Target Applications Schematic

Contextual Info: FZ06NIA045FH01 target datasheet flowNPC 0 600V/75A & 45mΩ Features flow0 housing ● Neutral-point-Clamped inverter ● Ultra fast switching ● Clip-In PCB mounting ● Low Inductance Layout Target Applications Schematic ● Solar inverters Types ● FZ06NIA045FH01

RHRU7540

Abstract: RHRU7550 RHRU7560
Contextual Info: RHRU7540, RHRU7550, RHRU7560 Data Sheet Title HR 540 HRU 50, HRU 60 bt A, 0V 0V per t ode ache File Number 3945.1 75A, 400V - 600V Hyperfast Diodes Features RHRU7540, RHRU7550 and RHRU7560 TA49067) are hyperfast diodes with soft recovery characteristics

10-FZ06NIA075SA-P926F33

Contextual Info: 10-FZ06NIA075SA-P926F33 preliminary datasheet NPC Application flowNPC0 600V/75A General conditions BUCK = = = = VGEon VGEoff Rgon Rgoff 15 V -15 V 8Ω 8Ω VGEon VGEoff Rgon Rgoff Vout= 230 VAC Figure 1. Buck MOSFET BOOST = = = = 15 V -15 V 8Ω 8Ω Figure 2.