600VI Search Results

infineon power cycling igbt3

Abstract: IGBT4 snap-off diode infineon igbt3 1200v infineon power cycling curves infineon igbt4 1200v Measurement of stray inductance for IGBT 2003N igbt simulation IGBT2
Contextual Info: 1200V IGBT4 -High Power- a new Technology Generation with Optimized Characteristics for High Current Modules M. Bäßler1, P.Kanschat1, F.Umbach2, C. Schaeffer3 1 Infineon Technologies AG, Max Planck Str.5, D-59581 Warstein Germany, Tel +49-2902-764-2290,

Contextual Info: INTERNATIONAL RECTIFIER lOR j| 4055455 □□0720cï E | in t e r n a t io n a l, r e c t if i e r _ T — c/— 7^3 DataSheetNo.PD-2.139 R30D & R30DR S E R IE S 600 - 400 VOLTS R A N G E 485 A M P AVG S T U D M O U N T E D D IF F U SE D JU N C T IO N R E C T IF IE R D IO D E S

FS50R12KT3

Abstract: Infineon technology roadmap for IGBT infineon power cycling Infineon IGBT2 cycling FS50R12KT4 Semiconductor Group igbt Eoff-FS100R12KE3 Gate Turn-off Thyristor 600V 20A igbt simulation 62mm-Modul
Contextual Info: Higher Junction Temperature in Power Modules – a demand from hybrid cars, a potential for the next step increase in power density for various Variable Speed Drives Dr. Reinhold Bayerer, Infineon Technologies AG, Max-Planck-Str. 5, Warstein, Germany Abstract

BSM20GP60

Abstract: BSM10GD60DL BSM15GD BSM150GB60DN2 BSM10GP60 BSM15GP60 BSM30GP60 BSM50GD60DN2 BSM150GD60DN2 BSM400GB60DN2
Contextual Info: European Power Semiconducctor and Electronics Company GmbH + Co. KG 600V IGBT modules reach new levels of efficiency for power electronics applications. By Andreas Karl, 1998 Existing and newly evolving markets and applications for power electronics are challenging electronics manufacturers

UC5613

Abstract: LX5204 LX5204CDP LX5204CDPT LX5204CPWP UC5603 LX5268
Contextual Info: LIN Doc #; 5204 9-Line H o t T h e I n f i n i t e P o w e r I o f n n o v a t i o n P S wap, [iPower D r o d u c t i o n DESCRIPTION T he LX5204 is a n in e-lin e active te rm in a to r fo r th e SCSI p arallel bus. This SCSI sta n d a rd re c o m m e n d s active te rm in a tio n at b o th

Contextual Info: TRANSISTOR MODULE QCA75AA100 UL;E76102 M Q C A 75A A 100 is a dual Darlington power transistor module which has series-connected high speed, high power Darlington transistors. Each transistor has a reverse paralleled fast recovery diode. The mounting base of the module is electrically isolated

EPCOS B32362

Abstract: B32361A2806J050 B32362A3207J030 B32360A2306J050 B32360A2806J050 B32360A4305J080 B32361A4506J080 IEC61071 B32360A2106J050 B32360A2156J050
Contextual Info: Power electronic capacitors General purpose applications Series/Type: B3236x Date: Version: 2006-07-04 2 Content of header bars 1 and 2 of data sheet will be automatically entered in headers and footers! Please fill in the table and then change the color to "white" or invisible . This ensures that the table disappears for the customer

PC929

Contextual Info: PC929 SHARP Shortcircuit Protector Circuit Built-in Photocoupler Suitable for Inverter-Driving MOS-FET/IGBT PC929 T Ù V V D E 0 8 8 4 app ro v ed type is also available as an option. • Features ■ Outline Dimensions (U nit : m m ) 1. Built-in IGBT shortcircuit protector circuit