609 200A Search Results

hep 154 silicon diode

Abstract: zy 406 transistor motorola HEP 801 hep 154 diode hep R1751 triac zd 607 2sb337 RS5743.3 F82Z hep 230 pnp
Contextual Info: SEMICONDUCTOR This guide has been prepared by the Motorola HEP technical staff to provide a cross-reference for the Hobbyist, Experimenter, and Profes­ sional service technician. The information contained herein is based on an analysis of the published specifications of each device listed. This

triac zd 607

Abstract: hep c6004 2sb504 2SC 968 NPN Transistor sje 607 motorola c6004 diode BY127 specifications K872 af118 Motorola Semiconductor hep c3806p
Contextual Info: & SEM ICO N DU CTO R This guide has been prepared by the Motorola HEP technical staff to provide a cross-reference for the Hobbyist, Experimenter, and Professional service techni­ cian. The information contained herein is based on an analysis of the published

SO 607 NH

Abstract: 61-GY DIODE FS 607 608 diode 61gy
Contextual Info: Philips Semiconductors Product specification PowerMOS transistor GENERAL DESCRIPTION BUK464-200A QUICK REFERENCE DATA N-channel enhancement mode field-effect power transistor in a plastic envelope suitable for surface mount applications. The device Is intended for use in

Contextual Info: Product specification Philips Semiconductors PowerMOS transistor GENERAL DESCRIPTION BUK464-200A QUICK REFERENCE DATA N-channel enhancement mode field-effect power transistor in a plastic envelope suitable for surface mount applications. The device is intended for use in

N1371

Abstract: 323985
Contextual Info: April 8, 1998 6DOHV5HSUHVHQWDWLYHV Australia Room 705, Bao Hua Bldg. Hua Qiang North Rd. Shenzhen Reptechnic 518031 3/36 Bydown Street 2089 T: 612.99.53.98.44 Canada K2K 2A3 T: 613.592.8910 F: 613.592.5441 Starvoy Technologies MEMEC Asia Pacific Ltd. F: 972.9.7744499

STR 6456

Abstract: str f 6456 STR G 6352 STR F 6168 Johnson motor 2 607 022 013 TEL5413 str 6168 STR F 6168 31 2322 662 98011 4805
Contextual Info: Distributors Europe Distributors ÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁ

Contextual Info: T-13/4l-EDs Standard Profile Data D isplay Products Diffused Tinted Encapsulation • Non-Diffused Tinted Encapsulation • Water Clear Encapsulation • Electro-Optical Characteristics @TA = 25°C P art N um ber Color Peak Tint111 Wavelength Xpk nm Chip Material

GM5ZR01200A

Abstract: 18198 GM5ZE01200A GM5ZG01200A GM5ZJ01200A GM5ZS01200A GM5ZV01200A IR sensor for 40khz EIAJ C-3
Contextual Info: No. SHARP CORPORATION DG-98Y016 TECHNICAL LITERATURE FOR Light Emitting Diode MODEL No. DATE G M 5 Z R 0 1 2 Q 0 A s e r ie s 1 3 -N o v -9 8 1. These specification sheets include m aterials protected under the copyright o f Sharp Corporation "Sharp" . Please do not reproduce or cause anyone to reproduce them without Sharp's consent

3 phase bridge rectifier 400HZ

Abstract: 3-phase bldc motor single chip 500V direct drive MTBF fit IGBT 1200 H BRIDGE inverters using igbt in matlab single phase fully controlled rectifier 110v 440V ac to 390V dc converter circuit SEN-5282-2 full wave bridge rectifier 25A 50V fast recovery zener ssr 115v 400Hz
Contextual Info: Products and Solutions Sensitron Semiconductor • 221 West Industry Court · Deer Park, NY 11729-4681 · Phone 631 586 7600 · Fax (631) 242 9798 · World Wide Web - www.sensitron.com · E-mail - sales@sensitron.com 143-0209 Fully Integrated Motor Controllers

ic str 6307

Abstract: str 6307 str x 6456 tel5413 STR S 6307 STR 6456 STR W 5456 C STR W 5456 A aeg 645 307 080 76660
Contextual Info: Tem ic Sales Offices S e m i c o n d u c t o r s Addresses Europe Denmark TEMIC Dansk Roskildevej 8-10 2620 Albert&Iund Tel: 45 43 648522 Fax: 45 43 626228 France TEMIC France Les Quadrants 3. avenue du centre B.P. 309 78054 St.-Q uentin-en-Yvelines Cedex

8002 1025

Abstract: JJN-300 jjn-50 JJN-30 JJN-60 JJN-150 JJN-40 JJN-10 JJN-15 JJN-25
Contextual Info: Bussmann T-Tron® Very Fast Acting Fuses JJN Class T 300 Volts, 1-1200 Amps Dimensional Data .88" ± 0.02 3.06" (± 0.04) .41" Dia. (± 0.02) 1A to 30A .88" (± 0.02) 2.03" .88" 1.25" (± 0.04) .56" Dia. (± 0.02) 450A to 600A 35A to 60A .284" (Typ. 2)

500 4cr 1

Abstract: JJN-1200 JJN-60 bussmann fuse 600 vdc 1000 amperes JJN-10 JJN-110 JJN-40 JJN-15 JJN-25 1B0083
Contextual Info: Bussmann T-Tron® Very Fast Acting Fuses JJN Class T 300 Volts, 1-1200 Amps Dimensional Data .88" ± 0.02 3.06" (± 0.04) .41" Dia. (± 0.02) 1A to 30A .88" (± 0.02) 2.03" .88" 1.25" (± 0.04) .56" Dia. (± 0.02) 450A to 600A 35A to 60A .284" (Typ. 2)

APQ03SN80AB

Abstract: MOSFET 800V 3A 800VVGS
Contextual Info: DEVICE SPECIFICATION APQ03SN80AB 800V/3A N-Channel MOSFET 1 Description These N-Channel enhancement mode power field effect transistors are produced using planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide

Contextual Info: DEVICE SPECIFICATION APQ03SN80AB 800V/3A N-Channel MOSFET 1 Description These N-Channel enhancement mode power field effect transistors are produced using planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide

Contextual Info: PD - 95970A IRG4BC30FD-SPbF Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH HYPERFAST DIODE C VCES = 600V Features • Fast: optimized for medium operating frequencies 1-5 kHz in hard switching, >20kHz in resonant mode . • Generation 4 IGBT design provides tighter

Contextual Info: PD - 95970A IRG4BC30FD-SPbF Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH HYPERFAST DIODE C VCES = 600V Features • Fast: optimized for medium operating frequencies 1-5 kHz in hard switching, >20kHz in resonant mode . • Generation 4 IGBT design provides tighter

IRF530S

Abstract: bridge rectifier 200a irg4bc30fd-s
Contextual Info: PD - 95970 IRG4BC30FD-SPbF Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH HYPERFAST DIODE C VCES = 600V Features • Fast: optimized for medium operating frequencies 1-5 kHz in hard switching, >20kHz in resonant mode . • Generation 4 IGBT design provides tighter

Contextual Info: PD - 96929 IRG4BC30FD-S Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH HYPERFAST DIODE C VCES = 600V Features • Fast: optimized for medium operating frequencies 1-5 kHz in hard switching, >20kHz in resonant mode . • Generation 4 IGBT design provides tighter

IRF530S

Contextual Info: PD - 95970 IRG4BC30FD-SPbF Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH HYPERFAST DIODE C VCES = 600V Features • Fast: optimized for medium operating frequencies 1-5 kHz in hard switching, >20kHz in resonant mode . • Generation 4 IGBT design provides tighter

VG 96929

Abstract: IC IGBT fast irf transistor IRF 250 IRG4BC30FD-S 6000UF ir igbt IRg4bc30
Contextual Info: PD - 96929 IRG4BC30FD-S Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH HYPERFAST DIODE C VCES = 600V Features • Fast: optimized for medium operating frequencies 1-5 kHz in hard switching, >20kHz in resonant mode . • Generation 4 IGBT design provides tighter

VG 96929

Abstract: IRG4BC30FD-S
Contextual Info: PD - 96929 IRG4BC30FD-S Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH HYPERFAST DIODE C VCES = 600V Features • Fast: optimized for medium operating frequencies 1-5 kHz in hard switching, >20kHz in resonant mode . • Generation 4 IGBT design provides tighter

PM200CSD060

Abstract: 72 volts inverter diagram
Contextual Info: PM200CSD060 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 Intellimod Module Three Phase IGBT Inverter Output 200 Amperes/600 Volts 1. V UPC 2. UFO 3. U P 4. V UPI 5. V VPC 6. VFO 7. V P 8. V VPI 9. V WPC 10. WFO A B

500 watt power UPS circuit diagram

Abstract: inverter protection ic 500 watt power inverter 500 watt inverter circuit diagram 450 watt circuit diagram H BRIDGE inverters circuit diagram using igbt IGBT G 1010 PM200CSD060
Contextual Info: PM200CSD060 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 Intellimod Module Three Phase IGBT Inverter Output 200 Amperes/600 Volts 1. V UPC 2. UFO 3. U P 4. V UPI 5. V VPC 6. VFO 7. V P 8. V VPI 9. V WPC 10. WFO A B

IRF530S

Abstract: IRFZ48 IRFZ48RS IRL3103L IRFZ48RSPBF IRFZ48RL
Contextual Info: PD - 95761 l l l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Drop in Replacement of the IRFZ48 for Linear/Audio Applications Lead-Free IRFZ48RSPbF IRFZ48RLPbF HEXFET Power MOSFET