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    60N60 Price and Stock

    PanJit Group PJMD360N60EC_L2_00001

    600V SUPER JUNCTION MOSFET
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    DigiKey PJMD360N60EC_L2_00001 Cut Tape 5,985 1
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    onsemi FGH60N60SMD

    IGBT FIELD STOP 600V 120A TO247
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    TME FGH60N60SMD 345 1
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    Richardson RFPD FGH60N60SMD 450
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    PanJit Group PJMF360N60EC_T0_00001

    600V SUPER JUNCTION MOSFET
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    DigiKey PJMF360N60EC_T0_00001 Tube 2,000 1
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    PanJit Group PJMP360N60EC_T0_00001

    600V SUPER JUNCTION MOSFET
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    DigiKey PJMP360N60EC_T0_00001 Tube 1,980 1
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    onsemi FCPF260N60E

    MOSFET N CH 600V 15A TO-220F
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    DigiKey FCPF260N60E Tube 1,867 1
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    Avnet Americas FCPF260N60E Bulk 16 Weeks, 4 Days 1
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    Mouser Electronics FCPF260N60E 1,085
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    Rochester Electronics FCPF260N60E 157 1
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    Find more 60N60 price and stock on Findchips.com

    60N60 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    60N60 IXYS Ultra-low Vce(sat) IGBT Original PDF

    60N60 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    60n6

    Abstract: 60N60 IC tl 072 IC100 60N60U1
    Text: Low VCE sat IGBT with Diode IXGR 60N60U1 ISOPLUS247TM VCES IC25 VCE(sat) = = = 600 V 75 A 1.7 V (Electrically Isolated Back Surface) Preliminary data Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MW 600


    Original     		PDF 60N60U1 ISOPLUS247TM IC100 60n6 60N60 IC tl 072 IC100 60N60U1

    MOSFET 60n60

    Abstract: 60N60 transistor 60N60 TAB 429 H
    Text: HiPerFETTM Power MOSFETs Single Die MOSFET IXFN 60N60 VDSS ID25 RDS on = 600 V = 60 A = 75 mW D N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr G Preliminary data S S Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 600 V VDGR


    Original     		PDF 60N60 OT-227 E153432 MOSFET 60n60 transistor 60N60 TAB 429 H

    60N60C2

    Abstract: ixgh60n60c2
    Text: Advance Technical Data HiPerFASTTM IGBT C2-Class High Speed IGBTs Symbol Test Conditions VCES IC25 VCE sat tfi typ IXGH 60N60C2 IXGT 60N60C2 Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20


    Original     		PDF 60N60C2 IC110 O-247 O-268 728B1 123B1 728B1 065B1 60N60C2 ixgh60n60c2

    IXGN60N60C2

    Abstract: 60N60C2 60N60C2D1 ixgn60N60 IXGN60N60C2D1 IGBT 60N60C2D1 siemens igbt siemens igbt 75a high current igbt 60N60C2D
    Text: Advance Technical Data HiPerFASTTM IGBT with Diode VCES IXGN 60N60C2 60N60C2D1 IC25 VCE sat C2-Class High Speed IGBTs tfi(typ) E Symbol Test Conditions V CES TJ = 25°C to 150°C D1 E Maximum Ratings 600 VCGR TJ = 25°C to 150°C; RGE = 1 MW = 600 V = 75 A


    Original     		PDF 60N60C2 IXGN60N60C2D1 OT-227B, IC110 2x61-06A IXGN60N60C2 60N60C2 60N60C2D1 ixgn60N60 IGBT 60N60C2D1 siemens igbt siemens igbt 75a high current igbt 60N60C2D

    Untitled

    Abstract: No abstract text available
    Text: Advance Technical Data HiPerFAST TM IGBT with Diode Optimized for 10-25 kHz hard switching and up to 100 kHz resonant switching IXGK 60N60B2D1 VCES IXGX 60N60B2D1 IC25 VCE sat tfi(typ) Symbol Test Conditions Maximum Ratings V CES TJ = 25°C to 150°C 600


    Original     		PDF 60N60B2D1 IC110 O-264 PLUS247 2x61-06A

    siemens igbt 75a

    Abstract: PLUS247
    Text: Advance Technical Data HiPerFAST TM IGBT with Diode IXGK 60N60C2D1 VCES IXGX 60N60C2D1 IC25 VCE sat C2-Class High Speed IGBTs tfi(typ) Symbol Test Conditions Maximum Ratings V CES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES


    Original     		PDF 60N60C2D1 IC110 2x61-06A siemens igbt 75a PLUS247

    IXGR60N60C2

    Abstract: No abstract text available
    Text: HiPerFASTTM IGBT ISOPLUS247TM IXGR 60N60C2 IXGR 60N60C2D1 Lightspeed 2TM Series Electrically Isolated Back Surface VCES IC25 VCE(sat) tfi(typ) = 600 V = 75 A = 2.7 V = 35 ns Preliminary Data Sheet IXGR_C2 IXGR_C2D1 Symbol Test Conditions Maximum Ratings


    Original     		PDF ISOPLUS247TM 60N60C2 60N60C2D1 IC110 IF110 IXGR60N60C2D1) ISOPLUS247 2x61-06A IXGR60N60C2

    60-06A

    Abstract: 60N60C2D1 60N60C2D IF110 PLUS247
    Text: IXGK 60N60C2D1 VCES IXGX 60N60C2D1 I C25 VCE sat C2-Class High Speed IGBTs tfi(typ) HiPerFASTTM IGBT with Diode Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM


    Original     		PDF 60N60C2D1 IC110 IF110 O-264 0-06A 60-06A 60N60C2D IF110 PLUS247

    60N60C2

    Abstract: gr60n60 IXGR60N60C2D1 siemens igbt 75a 60N60C2 DI GR60N60C2 60N60 ISOPLUS247 IF110 GR60N60C2D1
    Text: HiPerFASTTM IGBT ISOPLUS247TM IXGR 60N60C2 IXGR 60N60C2D1 Lightspeed 2TM Series Electrically Isolated Back Surface VCES IC25 VCE(sat) tfi(typ) = 600 V = 75 A = 2.7 V = 35 ns Preliminary Data Sheet IXGR_C2 IXGR_C2D1 Symbol Test Conditions Maximum Ratings


    Original     		PDF ISOPLUS247TM 60N60C2 60N60C2D1 IC110 IF110 IXGR60N60C2D1) 2x61-06A 60N60C2 gr60n60 IXGR60N60C2D1 siemens igbt 75a 60N60C2 DI GR60N60C2 60N60 ISOPLUS247 IF110 GR60N60C2D1

    60n60 igbt

    Abstract: ic 307 ex 60N60
    Text: Ultra-Low VCE sat IGBT IXGN 60N60 VCES = 600 V IC25 = 100 A VCE(sat) = 1.7 V Preliminary data sheet E Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 V VGES Continuous ±20 V VGEM Transient


    Original     		PDF 60N60 OT-227B 60n60 igbt ic 307 ex 60N60

    IXGH50N60BD1-P1

    Abstract: ISOPLUS247TM 60N60U1
    Text: Advanced Technical Information IXGR 60N60U1 Low VCE sat IGBT with Diode ISOPLUS247TM VCES IC25 VCE(sat) = = = 600 V 75 A 1.7 V (Electrically Isolated Back Surface) Symbol Test Conditions Maximum Ratings ISOPLUS247TM (IXGR) VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MΩ


    Original     		PDF ISOPLUS247TM 60N60U1 IC100 50/60Hz, IXGH50N60BD1-P1 IXGH50N60BD1-P1 ISOPLUS247TM 60N60U1

    Untitled

    Abstract: No abstract text available
    Text: Advance Technical Data HiPerFASTTM IGBT ISOPLUS247TM IXGR 60N60B2 IXGR 60N60B2D1 B2-Class High Speed IGBTs Electrically Isolated Back Surface VCES IC25 VCE(sat) tfi(typ) = 600 V = 75 A = 2.0 V = 100 ns D1 Symbol Test Conditions Maximum Ratings V CES TJ = 25°C to 150°C


    Original     		PDF ISOPLUS247TM 60N60B2 60N60B2D1 IC110 2x61-06A

    Untitled

    Abstract: No abstract text available
    Text: Advance Technical Data HiPerFASTTM IGBT ISOPLUS247TM IXGR 60N60B2 IXGR 60N60B2D1 B2-Class High Speed IGBTs Electrically Isolated Back Surface VCES IC25 VCE(sat) tfi(typ) = 600 V = 75 A = 2.0 V = 100 ns D1 Symbol Test Conditions Maximum Ratings V CES TJ = 25°C to 150°C


    Original     		PDF ISOPLUS247TM 60N60B2 60N60B2D1 PLUS247 E153432 IC110 2x61-06A

    60N60C2D1

    Abstract: No abstract text available
    Text: IXGK 60N60C2D1 VCES IXGX 60N60C2D1 I C25 VCE sat C2-Class High Speed IGBTs tfi(typ) HiPerFASTTM IGBT with Diode Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM


    Original     		PDF 60N60C2D1 IC110 O-264 IF110 PLUS247 0-06A

    60n60b

    Abstract: PLUS247 IXGR60N60B2 SiEMENS 3 leads EC 350 2x61-06A
    Text: Advance Technical Data HiPerFASTTM IGBT ISOPLUS247TM IXGR 60N60B2 IXGR 60N60B2D1 B2-Class High Speed IGBTs Electrically Isolated Back Surface VCES IC25 VCE(sat) tfi(typ) = 600 V = 75 A = 2.0 V = 100 ns D1 Symbol Test Conditions Maximum Ratings V CES TJ = 25°C to 150°C


    Original     		PDF ISOPLUS247TM 60N60B2 60N60B2D1 IC110 2x61-06A 60n60b PLUS247 IXGR60N60B2 SiEMENS 3 leads EC 350 2x61-06A

    60N60B2D1

    Abstract: ixgk60n60b2d1 PLUS247 ixgx60n60b2d1
    Text: Advance Technical Data HiPerFAST TM IGBT with Diode Optimized for 10-25 kHz hard switching and up to 100 kHz resonant switching IXGK 60N60B2D1 VCES IXGX 60N60B2D1 IC25 VCE sat tfi(typ) Symbol Test Conditions Maximum Ratings V CES TJ = 25°C to 150°C 600


    Original     		PDF 60N60B2D1 IC110 2x61-06A ixgk60n60b2d1 PLUS247 ixgx60n60b2d1

    MOSFET 60n60

    Abstract: IXFN SOT227
    Text: HiPerFETTM Power MOSFETs Single Die MOSFET IXFN 60N60 VDSS ID25 RDS on = 600 V = 60 A = 75 mW D N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr G Preliminary data S Symbol Test Conditions S Maximum Ratings VDSS TJ = 25°C to 150°C 600 V VDGR


    Original     		PDF 60N60 OT-227 E153432 MOSFET 60n60 IXFN SOT227

    Untitled

    Abstract: No abstract text available
    Text: Low VCE sat IGBT with Diode IXGR 60N60U1 ISOPLUS247TM VCES IC25 VCE(sat) = = = 600 V 75 A 1.7 V (Electrically Isolated Back Surface) Preliminary data Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MW 600


    Original     		PDF 60N60U1 ISOPLUS247TM IC100

    Untitled

    Abstract: No abstract text available
    Text: □ IXYS Advanced Technical Information IXFN 60N60 HiPerFET Power MOSFETs Single Die M OSFET VDSS ^D25 D DS on = 600 V = 60 A = 75 mQ N-Channel Enhancement Mode Avalanche Rated, Highdv/dt, Lowtrr s Maximum Ratings Symbol Test C onditions V DSS Td = 25°C to 150°C


    OCR Scan     		PDF 60N60

    3580J

    Abstract: No abstract text available
    Text: Ultra-Low VCE sat IGBT ixg n 60N60 VCES ^C 25 VCE(sat) u Ë oE Test Conditions V «s T, = 25”C to 150°C 600 VcOR ^ 600 V v GES v GEM Continuous ±20 V Transient ±30 V 'c 2 5 Tc =25«C 100 A Tc = 90°C 60 A 200 A l CM = 1 0 0 e 0.8 v CES A 'c 9 0 Maximum Ratings


    OCR Scan     		PDF 60N60 OT-227B, IXGN6QN60 3580J

    60N60

    Abstract: No abstract text available
    Text: IXGH 60N60 IXGK 60N60 IXGT 60N60 Ultra-Low VCE sat IGBT VCES ^C25 V C E(sat) V A V 600 75 1.6 Preliminary data sheet Symbol Test Conditions Maximum Ratings VCES T j = 2 5 °C to 150°C 600 V Vcon T,J = 2 5 ° C to 15 0 °C; R„_ be = 1 MO 600 V v GES Continuous


    OCR Scan     		PDF 60N60 60N60 O-247 O-268 O-264 1999IXYS

    ixgn60n60

    Abstract: No abstract text available
    Text: H Î Y Y ^JLsIk»!? flHVw AUltra-Low VCE sat IGBT ixgn vCES 60N60 ^C25 VCE(sat) 600 V 100 A 1.6 V Preliminary data sheet Maximum Ratings Symbol Test Conditions V CES Td = 25°C to 150°C 600 V V CGR Td = 25°C to 150°C; RGE = 1 MQ 600 V v GES Continuous


    OCR Scan     		PDF 60N60 OT-227BminiBLOC ixgn60n60

    60N60

    Abstract: G 60N60
    Text: ID1XYS Ultra-Low VCE sat IGBT IXGH 60N60 v v CES ^C25 Symbol Test Conditions Maximum Ratings v*C E S v CGR Tj = 25°C to 150°C 600 V ^ = 25DC to 150°C; RGE = 1 M£2 600 V v GES v GEM Continuous ±20 V Transient ±30 V ^C25 Tc = 25°C, limited by leads 75


    OCR Scan     		PDF 60N60 O-247 60N60 G 60N60

    ixgh 1500

    Abstract: 40N60A 25N120 200n60 60n60 igbt smd 30n60 10N60A 30N60A .25N100 20n60a
    Text: Insulated Gate Bipolar Transistors IGBT G series with high gain V•CSS : ■■ Type . TJm = 15° CC > New ► IXGA IXGH IXGH IXGH IXGH IXGH IXGH IXGH 10N60 10N60 20N60 31N60 30N60 38N60 40N60 60N60 IXGH 10N100 >■ IXGA 12N100 > IXGH 12N100 > ► >•


    OCR Scan     		PDF 10N60 20N60 31N60 30N60 38N60 40N60 60N60 32N60BS 40N60A ixgh 1500 25N120 200n60 60n60 igbt smd 10N60A 30N60A .25N100 20n60a