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onsemi NTD60N02R MOSFET N-CH 25V 8.5A/32A DPAK
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	NTD60N02R	Tube			1,950	1 - 10 - 100 - 1000 - 10000 $0.26	Buy Now
Bristol Electronics	NTD60N02R		465			1 - 10 - 100 - 1000 - 10000 -	Get Quote
onsemi NTD60N02RG MOSFET N-CH 25V 8.5A/32A DPAK
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	NTD60N02RG	Tube				1 - 10 - 100 - 1000 - 10000 -	Buy Now
onsemi NTD60N02RT4 MOSFET N-CH 25V 8.5A/32A DPAK
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	NTD60N02RT4	Reel				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Rochester Electronics	NTD60N02RT4		1,133		1	1 - 10 - 100 $0.16 1000 $0.13 10000 $0.12	Buy Now
onsemi NTD60N02RT4G MOSFET N-CH 25V 8.5A/32A DPAK
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	NTD60N02RT4G	Reel				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Bristol Electronics	NTD60N02RT4G		30,553			1 - 10 - 100 - 1000 - 10000 -	Get Quote
onsemi NTD60N02R-1G MOSFET N-CH 25V 8.5A/32A IPAK
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	NTD60N02R-1G	Tube				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Rochester Electronics	NTD60N02R-1G		334,998		1	1 - 10 - 100 $0.13 1000 $0.11 10000 $0.10	Buy Now

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60N02R Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
T60 N02R Abstract: T60N02R MOSFEt t60 n02r 60n02r T 60 N02R n02r NTD60N02RG 60N02 NTD60N02RT4G NTD60N02R Contextual Info: 60N02R Power MOSFET 62 A, 24 V, N−Channel, DPAK Features • Planar HD3e Process for Fast Switching Performance Low RDS on to Minimize Conduction Loss Low Ciss to Minimize Driver Loss Low Gate Charge Optimized for High Side Switching Requirements in	Original	NTD60N02R NTD60N02RG NTD60N02RT4 NTD60N02RT4G NTD60N02R-1 NTD60N02R-1G BRD8011/D. T60 N02R T60N02R MOSFEt t60 n02r 60n02r T 60 N02R n02r 60N02	PDF
T60N02R Contextual Info: 60N02R Power MOSFET 60 Amps, 24 Volts N-Channel DPAK Features • • • • • http://onsemi.com Planar HD3e Process for Fast Switching Performance Low RDS on to Minimize Conduction Loss Low Ciss to Minimize Driver Loss Low Gate Charge Optimized for High Side Switching Requirements in	Original	NTD60N02R NTD60N02R/D T60N02R	PDF
60N02 Abstract: t60 n02r NTD60N02RG N02R T60N02R 369D NTD60N02R NTD60N02RT4 NTD60N02RT4G T 60 N02R Contextual Info: 60N02R Power MOSFET 62 A, 24 V, N−Channel, DPAK Features • Planar HD3e Process for Fast Switching Performance Low RDS on to Minimize Conduction Loss Low Ciss to Minimize Driver Loss Low Gate Charge Optimized for High Side Switching Requirements in	Original	NTD60N02R NTD60N02R/D 60N02 t60 n02r NTD60N02RG N02R T60N02R 369D NTD60N02R NTD60N02RT4 NTD60N02RT4G T 60 N02R	PDF
T60 N02R Abstract: T60N02R MOSFEt t60 n02r T 60 N02R 60N02R 60N02 369D N02R NTD60N02R NTD60N02RT4 Contextual Info: 60N02R Power MOSFET 60 Amps, 24 Volts N−Channel DPAK Features Drain−to−Source Voltage Symbol Value 8.0 mW @ 4.5 V 60 A 1 VGS ±20 Vdc Thermal Resistance − Junction−to−Case Total Power Dissipation @ TC = 25°C Drain Current Continuous @ TC = 25°C, Chip	Original	NTD60N02R NTD60N02R/D T60 N02R T60N02R MOSFEt t60 n02r T 60 N02R 60N02R 60N02 369D N02R NTD60N02R NTD60N02RT4	PDF
T60 N02R Abstract: T60N02R 60N02R 60N02 n02r Contextual Info: 60N02R Power MOSFET 60 Amps, 24 Volts N−Channel DPAK Features Drain−to−Source Voltage Symbol Value 8.4 mW @ 10 V 60 A 1 VGS ±20 Vdc Thermal Resistance − Junction−to−Case Total Power Dissipation @ TC = 25°C Drain Current Continuous @ TC = 25°C, Chip	Original	NTD60N02R NTD60N02R/D T60 N02R T60N02R 60N02R 60N02 n02r	PDF
Contextual Info: 60N02R Power MOSFET 60 Amps, 24 Volts N-Channel DPAK Features • • • • • http://onsemi.com Planar HD3e Process for Fast Switching Performance Low RDS on to Minimize Conduction Loss Low Ciss to Minimize Driver Loss Low Gate Charge Optimized for High Side Switching Requirements in	Original	NTD60N02R r14525 NTD60N02R/D	PDF
n02r Abstract: T60 N02R dpak DIODE 948 T60N02R 60N02R 60N02 ntd60n02rg 100 amp mosfet NTD60N02R T 948 Contextual Info: 60N02R Power MOSFET 62 Amps, 24 Volts N−Channel DPAK Features • • • • • • Planar HD3e Process for Fast Switching Performance Low RDS on to Minimize Conduction Loss Low Ciss to Minimize Driver Loss Low Gate Charge Optimized for High Side Switching Requirements in	Original	NTD60N02R NTD60N02R/D n02r T60 N02R dpak DIODE 948 T60N02R 60N02R 60N02 ntd60n02rg 100 amp mosfet NTD60N02R T 948	PDF
60N02 Abstract: t60 n02r T60N02R T 60 N02R 369D N02R NTD60N02R NTD60N02RG NTD60N02RT4 NTD60N02RT4G Contextual Info: 60N02R Power MOSFET 62 A, 25 V, N−Channel, DPAK Features • Planar HD3e Process for Fast Switching Performance Low RDS on to Minimize Conduction Loss Low Ciss to Minimize Driver Loss Low Gate Charge Optimized for High Side Switching Requirements in	Original	NTD60N02R NTD60N02R/D 60N02 t60 n02r T60N02R T 60 N02R 369D N02R NTD60N02R NTD60N02RG NTD60N02RT4 NTD60N02RT4G	PDF
NTD60N02R Abstract: NTD60N02RG T60 N02R NTD60N02RT4G 369D N02R NTD60N02RT4 T 60 N02R Contextual Info: 60N02R Power MOSFET 62 A, 24 V, N−Channel, DPAK Features • Planar HD3e Process for Fast Switching Performance Low RDS on to Minimize Conduction Loss Low Ciss to Minimize Driver Loss Low Gate Charge Optimized for High Side Switching Requirements in	Original	NTD60N02R NTD60N02R/D NTD60N02R NTD60N02RG T60 N02R NTD60N02RT4G 369D N02R NTD60N02RT4 T 60 N02R	PDF
60N02 Abstract: 60N02R n02r 369A-13 NTD60N02R NTD60N02R1 NTD60N02RT4 Contextual Info: 60N02R Power MOSFET 60 Amps, 24 Volts N-Channel DPAK Features • • • • • http://onsemi.com Planar HD3e Process for Fast Switching Performance Low RDS on to Minimize Conduction Loss Low Ciss to Minimize Driver Loss Low Gate Charge Optimized for High Side Switching Requirements in	Original	NTD60N02R NTD60N02R/D 60N02 60N02R n02r 369A-13 NTD60N02R NTD60N02R1 NTD60N02RT4	PDF
t60n02r Abstract: T60 N02R 60N02R T 60 N02R 60N02 Contextual Info: 60N02R Power MOSFET 60 Amps, 24 Volts N−Channel DPAK Features • • • • • http://onsemi.com Planar HD3e Process for Fast Switching Performance Low RDS on to Minimize Conduction Loss Low Ciss to Minimize Driver Loss Low Gate Charge Optimized for High Side Switching Requirements in	Original	NTD60N02R NTD60N02R/D t60n02r T60 N02R 60N02R T 60 N02R 60N02	PDF
diode C531 Abstract: c531 diode lga775 schematic transistor C535 60N02R C536 VCC3 1156 01 85n02 C532 diode u504 Contextual Info: NCP5318DEMO NCP5318 Four Phase Demonstration Board Note Switching Regulator Controller http://onsemi.com DEMONSTRATION NOTE Features Protection Features • Programmable 2/3/4 Phase Operation • Lossless Current Sensing • Enhanced V2 Control Method Provides Fast Transient	Original	NCP5318DEMO NCP5318 NCP5318DEMO/D diode C531 c531 diode lga775 schematic transistor C535 60N02R C536 VCC3 1156 01 85n02 C532 diode u504	PDF