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    60N120 Search Results

    60N120 Result Highlights (1)

    Part ECAD Model Manufacturer Description Download Buy
    TW060N120C
    Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET, 1200 V, 36 A, 0.078 Ω@18 V, TO-247 Visit Toshiba Electronic Devices & Storage Corporation
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    60N120 Price and Stock

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    onsemi NVBG160N120SC1

    SICFET N-CH 1200V 19.5A D2PAK
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    DigiKey () NVBG160N120SC1 Digi-Reel 2,191 1
    • 1 $12.17
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    • 100 $7.28
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    NVBG160N120SC1 Cut Tape 2,191 1
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    NVBG160N120SC1 Reel 1,600 800
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    Avnet Americas NVBG160N120SC1 Bulk 23 Weeks, 1 Days 800
    • 1 $12.38
    • 10 $11.10
    • 100 $8.66
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    Mouser Electronics NVBG160N120SC1 1,436
    • 1 $11.21
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    Newark NVBG160N120SC1 Cut Tape 800 1
    • 1 $10.05
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    Richardson RFPD NVBG160N120SC1 800
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    Chip 1 Exchange NVBG160N120SC1 3,478
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    Avnet Asia NVBG160N120SC1 32 6 Weeks 800
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    Avnet Silica NVBG160N120SC1 7 Weeks 800
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    EBV Elektronik NVBG160N120SC1 8 Weeks 800
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    Flip Electronics NVBG160N120SC1 159,200
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    Vyrian NVBG160N120SC1 588
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    Win Source Electronics NVBG160N120SC1 13,333
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    Wuhan P&S NVBG160N120SC1 2,549 1
    • 1 $16.59
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    onsemi NVH4L160N120SC1

    SICFET N-CH 1200V 17.3A TO247
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    DigiKey NVH4L160N120SC1 Tube 1,243 1
    • 1 $8.32
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    • 100 $6.67
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    Avnet Americas NVH4L160N120SC1 Tube 6 Weeks 450
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    Mouser Electronics NVH4L160N120SC1 200
    • 1 $6.85
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    • 100 $6.58
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    Newark NVH4L160N120SC1 Bulk 309 1
    • 1 $12.59
    • 10 $12.45
    • 100 $10.84
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    Rochester Electronics NVH4L160N120SC1 38,265 1
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    Richardson RFPD NVH4L160N120SC1 450
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    EBV Elektronik NVH4L160N120SC1 450 8 Weeks 30
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    Flip Electronics NVH4L160N120SC1 900
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    New Advantage Corporation NVH4L160N120SC1 900 1
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    Wuhan P&S NVH4L160N120SC1 62 1
    • 1 $18.37
    • 10 $18.37
    • 100 $11.73
    • 1000 $8.89
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    onsemi NTBG160N120SC1

    SICFET N-CH 1200V 19.5A D2PAK
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    DigiKey () NTBG160N120SC1 Digi-Reel 770 1
    • 1 $7.66
    • 10 $5.77
    • 100 $5.16
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    NTBG160N120SC1 Cut Tape 770 1
    • 1 $7.66
    • 10 $5.77
    • 100 $5.16
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    Mouser Electronics NTBG160N120SC1 2,245
    • 1 $5.97
    • 10 $5.02
    • 100 $4.81
    • 1000 $4.37
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    Newark NTBG160N120SC1 Bulk 765 800
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    Rochester Electronics NTBG160N120SC1 3,910 1
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    Richardson RFPD NTBG160N120SC1 800
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    Chip 1 Exchange NTBG160N120SC1 3,828
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    Avnet Asia NTBG160N120SC1 54 6 Weeks 800
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    Avnet Silica NTBG160N120SC1 7 Weeks 800
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    EBV Elektronik NTBG160N120SC1 1,600 8 Weeks 800
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    New Advantage Corporation NTBG160N120SC1 1,600 1
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    Wuhan P&S NTBG160N120SC1 2,925 1
    • 1 $11.76
    • 10 $11.76
    • 100 $7.51
    • 1000 $5.69
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    STMicroelectronics SCTW60N120G2

    DISCRETE
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    DigiKey SCTW60N120G2 Bulk 599 1
    • 1 $17.10
    • 10 $11.68
    • 100 $10.56
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    Avnet Americas () SCTW60N120G2 Bulk 111 Weeks 1
    • 1 $23.57
    • 10 $22.35
    • 100 $19.28
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    SCTW60N120G2 Tube 32 Weeks 600
    • 1 -
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    • 1000 $12.08
    • 10000 $10.56
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    Mouser Electronics SCTW60N120G2 55
    • 1 $15.79
    • 10 $11.66
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    Newark SCTW60N120G2 Bulk 77 1
    • 1 $15.33
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    STMicroelectronics SCTW60N120G2 55 1
    • 1 $15.47
    • 10 $11.43
    • 100 $10.36
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    TME SCTW60N120G2 1
    • 1 $37.86
    • 10 $31.60
    • 100 $28.32
    • 1000 $24.62
    • 10000 $23.80
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    Avnet Silica SCTW60N120G2 600 17 Weeks 30
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    EBV Elektronik SCTW60N120G2 33 Weeks 30
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    onsemi NTH4L160N120SC1

    SICFET N-CH 1200V 17.3A TO247
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey NTH4L160N120SC1 Tube 538 1
    • 1 $9.55
    • 10 $9.55
    • 100 $5.43
    • 1000 $4.42
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    Avnet Americas () NTH4L160N120SC1 Tube 0 Weeks, 2 Days 120
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    NTH4L160N120SC1 Bulk 9 Weeks, 3 Days 1
    • 1 $7.66
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    NTH4L160N120SC1 Tube 6 Weeks 450
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    Mouser Electronics NTH4L160N120SC1 2,229
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    Rochester Electronics NTH4L160N120SC1 66 1
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    TME NTH4L160N120SC1 1
    • 1 $11.59
    • 10 $9.23
    • 100 $8.62
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    Ameya Holding Limited NTH4L160N120SC1 2,240
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    ComSIT USA NTH4L160N120SC1 1,680
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    Richardson RFPD NTH4L160N120SC1 450
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    Avnet Asia NTH4L160N120SC1 1,890 6 Weeks 450
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    • 10000 $4.36
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    Avnet Silica NTH4L160N120SC1 7 Weeks 30
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    EBV Elektronik NTH4L160N120SC1 1,290 8 Weeks 30
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    Flip Electronics NTH4L160N120SC1 528
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    60N120 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    60N120

    Abstract: D-68623 IXER60N120 V9560
    Contextual Info: IXER 60N120 NPT3 IGBT IC25 = 95 A = 1200 V VCES VCE sat typ. = 2.1 V in ISOPLUS 247TM ISOPLUS 247TM E153432 C G G C E Isolated Backside* E G = Gate C = Collector E = Emitter *Patent pending Features IGBT Symbol Conditions VCES TVJ = 25°C to 150°C Maximum Ratings


    Original
    60N120 247TM E153432 IXER60N120 60N120 D-68623 IXER60N120 V9560 PDF

    IXEN60N120

    Abstract: 60N120 IXEN 60N120 IXEN 60N120D1 m4 diode 60n120d1 D-68623 diode 331 IXEN 60N120D1
    Contextual Info: IXEN 60N120 IXEN 60N120D1 NPT3 IGBT IC25 = 100 A = 1200 V VCES VCE sat typ. = 2.1 V in miniBLOC package C C G miniBLOC, SOT-227 B E153432 G E G E E IXEN 60N120 IXEN 60N120D1 C = Collector G = Gate E = Emitter * E C * Either Emitter terminal can be used as Main or Kelvin Emitter


    Original
    60N120 60N120D1 OT-227 E153432 IXEN60N120 IXEN60N120 60N120 IXEN 60N120 IXEN 60N120D1 m4 diode 60n120d1 D-68623 diode 331 IXEN 60N120D1 PDF

    60N120

    Contextual Info: Advanced Technical Information IXEN 60N120 IC25 NPT3-IGBT VCES VCE sat typ. in miniBLOC package = 100 A = 1200 V = 2.1 V miniBLOC, SOT-227 B E153432 E G E E C = Collector G = Gate C E = Emitter * * Either Emitter terminal can be used as Main or Kelvin Emitter


    Original
    60N120 OT-227 E153432 PDF

    60N120

    Abstract: 60N120D1
    Contextual Info: NPT3 IGBT IC25 IXEN 60N120 IXEN 60N120D1 VCES in miniBLOC package VCE sat typ. C Preliminary data sheet C G = 100 A = 1200 V = 2.1 V miniBLOC, SOT-227 B E153432 G E G E E IXEN 60N120 IXEN 60N120D1 C = Collector G = Gate E = Emitter * E C * Either Emitter terminal can be used as Main or Kelvin Emitter


    Original
    60N120 60N120D1 OT-227 E153432 60N120 60N120D1 coeffic22 PDF

    60N120

    Abstract: IXER60N120 80E10 igbt for induction heating ic IXER 60N120 20600t
    Contextual Info: IXER 60N120 NPT3 IGBT IC25 = 95 A = 1200 V VCES VCE sat typ. = 2.1 V in ISOPLUS 247TM ISOPLUS 247TM E153432 C G G C E Isolated Backside E G = Gate t Conditions Maximum Ratings VCES TVJ = 25°C to 150°C u Symbol TC = 25°C TC = 90°C ICM VCEK VGE = ±15 V; RG = 22 Ω; TVJ = 125°C


    Original
    60N120 247TM E153432 IXER60N120 60N120 IXER60N120 80E10 igbt for induction heating ic IXER 60N120 20600t PDF

    Contextual Info: IXER 60N120 NPT3 IGBT IC25 = 95 A VCES = 1200 V VCE sat typ. = 2.1 V in ISOPLUS 247TM ISOPLUS 247TM E153432 C G G C E Isolated Backside E G = Gate Maximum Ratings VCES TVJ = 25°C to 150°C 1200 ± 20 TC = 25°C TC = 90°C ICM VCEK VGE = ±15 V; RG = 22 Ω; TVJ = 125°C


    Original
    60N120 247TM E153432 IXER60N120 PDF

    60N120

    Abstract: 60N120D1 IXEN 60N120 IXEN 60N120D1 induction heating technical information D-68623
    Contextual Info: Advanced Technical Information NPT3 IGBT IC25 IXEN 60N120 IXEN 60N120D1 VCES in miniBLOC package VCE sat typ. C C G = 100 A = 1200 V = 2.1 V miniBLOC, SOT-227 B E153432 G E G E E IXEN 60N120 IXEN 60N120D1 C = Collector G = Gate E = Emitter * E C * Either Emitter terminal can be used as Main or Kelvin Emitter


    Original
    60N120 60N120D1 OT-227 E153432 60N120D1 60N120 IXEN 60N120 IXEN 60N120D1 induction heating technical information D-68623 PDF

    Contextual Info: IXEN 60N120 IXEN 60N120D1 NPT3 IGBT IC25 = 100 A VCES = 1200 V VCE sat typ. = 2.1 V in miniBLOC package C C G miniBLOC, SOT-227 B E153432 G E G E E IXEN 60N120 C = Collector G = Gate E = Emitter * IXEN 60N120D1 E C * Either Emitter terminal can be used as Main or Kelvin Emitter


    Original
    60N120 60N120D1 OT-227 E153432 IXEN60N120 PDF

    60N120

    Abstract: induction heat resonant D-68623 V9560 60n12
    Contextual Info: Advanced Technical Information IXER 60N120 IC25 NPT3 IGBT VCES VCE sat typ. in ISOPLUS 247TM = 95 A = 1200 V = 2.1 V ISOPLUS 247TM E153432 C G G C E Isolated Backside* E G = Gate C = Collector E = Emitter *Patent pending Features IGBT Symbol Conditions VCES


    Original
    60N120 247TM E153432 induction heat resonant D-68623 V9560 60n12 PDF

    60N120

    Abstract: IXEN 60N120 IXEN 60N120D1 D-68623 IXEN60N120 60N120D1
    Contextual Info: IXEN 60N120 IXEN 60N120D1 NPT3 IGBT IC25 = 100 A = 1200 V VCES VCE sat typ. = 2.1 V in miniBLOC package C C G miniBLOC, SOT-227 B E153432 G E G E E IXEN 60N120 C = Collector G = Gate E = Emitter * IXEN 60N120D1 E C * Either Emitter terminal can be used as Main or Kelvin Emitter


    Original
    60N120 60N120D1 OT-227 E153432 IXEN60N120 60N120 IXEN 60N120 IXEN 60N120D1 D-68623 IXEN60N120 60N120D1 PDF

    7N60B equivalent

    Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2
    Contextual Info: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches


    Original
    MS-013 10-Pin 5M-1994 MO-229 7N60B equivalent 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2 PDF

    30N120D1

    Abstract: 55N120D1 35N60BD1 30n120d 35N60B transistor c90 40N120D1 20N120D1 60N120 20N60BD1
    Contextual Info: Discrete N P TIGBT A A 3 NPT IGBT , FID H0 F" NPT IGBT = non-punch through insulated gate bipolar transistor square RBSOA, short circuit rated p V V Type IXDP IXDP IXDP IXDH IXDH >- IXDR 20N60B 20N60BD1 35N60B 35N60B 35N60BD1 35N60BD1 600 IXDA 20N120AS IXDH 20N120


    OCR Scan
    O-268 35-06C 40-06D OT-227B 50-12E 50-12BD 30N120D1 55N120D1 35N60BD1 30n120d 35N60B transistor c90 40N120D1 20N120D1 60N120 20N60BD1 PDF