60NS Search Results

simm EDO 72pin

Contextual Info: 72PIN EDO SIMM 32MB With 4Mx4 60ns TS8MED3260 Description Features The TS8MED3260 is a 8M by 32-bit dynamic RAM • Extended Data Out Mode operation module with 16 pcs of 4Mx4 DRAMs assembled on the • Single +5.0V ± 10% power supply. printed circuit board.

CD4025BMS

Abstract: CD4000B CD4000BMS CD4001B CD4001BMS CD4002B CD4002BMS CD4025B H3W CERAMIC FLATPACK
Contextual Info: CD4000BMS, CD4001BMS CD4002BMS, CD4025BMS CMOS NOR Gate November 1994 Features Pinouts • High-Voltage Types 20V Rating CD4000BMS TOP VIEW • Propagation Delay Time = 60ns (typ.) at CL = 50pF, VDD = 10V NC 1 14 VDD • Buffered Inputs and Outputs NC 2

ta25 du14

Contextual Info: ST1641OOOAG1 -xxLVG 144-PIN SO-DIMMS 1M X 64 Bits DRAM SO-DIMM Memory Module FEATURES • GENERAL DESCRIPTION Performance range: *R A C *C A C ‘ rc STI. •-60LVG 60ns 15ns 110ns STI. •-70LVG 70ns 20ns 130ns STI. •-80LVG 80ns 20ns 150ns The Simple Technology STI641000AG1 is a 1M x 64 bits

jeida+dram+88+pin

Abstract: jeida 88 pin jeida dram 88 pin
Contextual Info: STI321000C1 -xxVx 88-PIN CARDS 1M X 32 DRAM Card FEATURES • Performance range: ^RAC ^CAC *RC STI321000C1-60Vx 60ns 15ns 110ns STI32100OC1-7OVx 70ns 18ns 130ns STI321000C1-80Vx 80ns 20ns 150ns The Simple Technology STI321000C1 is a 1M bit x 32 Dynamic RAM high density memory card. The Simple Technology

jeida dram 88 pin

Abstract: STI324000C1
Contextual Info: STI324000C1 -X X V 88-PIN CARDS 4M X 32 DRAM Card FEATURES • GENERAL DESCRIPTION Performance range: ^RAC Wc *RC STI324000C1 -60V 60ns 15ns 110ns STI324000C1-70V 70ns 20ns 130ns The Simple Technology STI324000C1 is a 4M bil x 32 Dynamic RAM high density memory card. The Simple Technology

Contextual Info: STI368003 72-PIN SIMMS 8M X 36 BITS DRAM SIMM Memory Module FEATURES • GENERAL DESCRIPTION Performance range: ^RAC ^CAC ^RC STI368003-60 60ns 15ns 110ns STI368003-70 70ns 20ns 130ns • Fast Page Mode operation • CAS-before-RAS refresh capability • RAS-only and Hidden refresh capability

Contextual Info: STI721005D1 -xxVG 168-PIN DIMMS 1M X 72 Bit DRAM DIMM with FPM and ECC Optimized FEATURES • GENERAL DESCRIPTION Performance range: *RAC ^CAC *RC *PC STI.-60VG 60ns 20ns 110ns 40ns STI.-70VG 70ns 25ns 130ns 45ns The Simple Technology STI721005D1-xxVG is a 1M x 72 bit

Contextual Info: STI338000 72-PIN SIMMS 8M X 33 Bits DRAM SIMM Memory Module FEATURES • GENERAL DESCRIPTION Performance range: *RAC ^CAC I rc STI338000-60 60ns 15ns 110ns STI338000-70 70ns 20ns 130ns STI338000-80 80ns 20ns 150ns The Simple Technology STI338000 is a 8M x 33 bits Dynamic

Contextual Info: STI641004D1-60G 168-PIN DIMMS 1M X 64 Bit DRAM DIMM with Extended Data Out EDO FEATURES • GENERAL DESCRIPTION Performance range: ^RAC ^CAC *RC *HPC 60ns 17ns 110ns 25ns • • EDO (Hyper) Mode operation CAS-before-RAS refresh capability • RAS-only refresh capability

Contextual Info: STI32256 72-PIN SIMMS 256K X 32 DRAM SIMM Memory Module FEATURES • GENERAL DESCRIPTION Performance range: ^RAC ^CAC ^RC STI32256-60 60ns 15ns 110ns STI32 2 56-70 70ns 20ns 130ns STI32256-80 80ns 20ns 150ns The Simple Technology STI32256 is a 256K bit x 32 Dynamic

Contextual Info: STI644004UD1-60VG 168-PIN DIMMS 4M X 64 Bit DRAM DIM M with EDO and without Buffers FEATURES • GENERAL DESCRIPTION Performance range: ^RAC I ^CAC 60ns 15ns I rC ^HPC 104ns 25ns The Simple Technology STI644004UD1-60VG is a 4M x 64 bit Dynamic RAM high density memory module. The Simple

Contextual Info: STI648004G1 -60VG 144-PIN SO-DIMMS 8M X 64 Bits DRAM SO-DIMM Memory Module FEATURES • GENERAL DESCRIPTION Performance range: *RAC ^CAC ^RC ^HPC 60ns 15ns 104ns 25ns The Simple Technology STI648004G1-60VG is a 8M x 64 bits Dynamic RAM high density memory module. The Simple

Contextual Info: ATP613 Ordering number : ENA1903 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET ATP613 General-Purpose Switching Device Applications Features • • • Reverse recovery time trr=60ns typ. Input Capacitance Ciss=350pF(typ.) Halogen free compliance

HCF4081B

Abstract: HCF4081BEY HCF4081BM1 HCF4081M013TR HCF4081BE
Contextual Info: HCF4081B QUAD 2 INPUT AND GATE • ■ ■ ■ ■ ■ MEDIUM SPEED OPERATION : tPD = 60ns Typ. at 10V QUIESCENT CURRENT SPECIFIED UP TO 20V 5V, 10V AND 15V PARAMETRIC RATINGS INPUT LEAKAGE CURRENT II = 100nA (MAX) AT VDD = 18V TA = 25°C 100% TESTED FOR QUIESCENT CURRENT

Contextual Info: IB M 1 1 S 2 3 2 0 L N IB M 1 1 S 2 3 2 0 L L 2M x 32 SODIMM Module Features • 72-Pin Small Outline Dual-ln-Line Memory Module • Performance: -60 -70 tRAC RAS Access Time 60ns 70ns fc A C CAS Access Time 15ns 20ns Access Time From Address 30ns 35ns W Irc Cycle Time

Contextual Info: IBM11S4320CP IBM11S4320CM 4M x 32 SO DIMM Module Features • 72-Pin Small Outline Dual-In-Line Memory Module • Performance: • High Performance C M O S process • Single 3.3 ± 0 .3V or 5 .0 ± 0 .25 V Power Supply -60 -70 tRAC RAS Access Time 60ns 70ns

Contextual Info: IBM11S4325BP IBM11S4325BM 4M X 32 SO DIMM Module Features 72-Pin Small Outline Dual-In -Line Memory Module Performance: -60 I -70 I i tRAc i RAS Access Time 60ns j 70ns j i tcAG i CAS Access Time 15ns I 20ns j i tAA I Access Time From Address j 30ns j 35ns !

Contextual Info: IBM11M4640C 4M x 64 DRAM MODULE Features • 168 Pin JEDEC Standard, 8 Byte Dual In-line Memory Module • 4Mx64 Fast Page Mode DIMM • Performance: -60 -70 W c RAS Access Time 60ns 70ns fc A C CAS Access Time 20ns 25ns tA A Access Time From Address 35ns

550C

Abstract: HM-7680R HM-7681R PAA13
Contextual Info: 3 } HARRIS HM-7680R/81R S E M IC O N D U C T O R P R O D U C T S D IV IS IO N 1K x 8 P R O M ADIVISIONO FHARRISCORPORATION DECEMBER 1977 HM-7680R - Open Collector Outputs HM-7681R - "Three State" Outputs Preliminary Pinouts Features • 60ns M A X IM U M A D D R E S S ACCESS T IM E

2SK996

Abstract: 1128A FET 1127
Contextual Info: P o w er F-MOS FET 2SK 996 2SK996 Silicon N-channel Power F-M O S FET Package Dim ensions • Features • Low ON resistan ce R ds on : R d s (on) = 1 .2 ii (typ.) • High sw itching ra te : tf = 60ns (typ.) • No secondary breakdown Unit: mm .10 2rr L4m ax

KMM5321000BV-7

Abstract: KMM5321000BV-6 1Mx4 dram simm caso Samsung Capacitor DO30 KMM5321000BV-8
Contextual Info: SAMSUNG ELECTRONICS INC b?E D • O O lS llb KMM5321000BV/BVG fi^b DRAM MODULES 1Mx32 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: tftAC • • • • • • • tcAc I rc KMM5321000BV-6 60ns 15ns 110ns KMM5321000BV-7 70ns

truth table for 7 inputs OR gate

Abstract: HCF4073B HCF4073BEY HCF4073BM1 HCF4073M013TR
Contextual Info: HCF4073B TRIPLE 3 INPUT AND GATE • ■ ■ ■ ■ ■ MEDIUM SPEED OPERATION : tPD = 60ns TYP. at VDD = 10V QUIESCENT CURRENT SPECIFIED UP TO 20V 5V, 10V AND 15V PARAMETRIC RATINGS INPUT LEAKAGE CURRENT II = 100nA (MAX) AT VDD = 18V TA = 25°C 100% TESTED FOR QUIESCENT CURRENT

TSH321

Abstract: TSH321I
Contextual Info: TSH321 WIDE BANDWIDTH AND MOS INPUT SINGLE OPERATIONAL AMPLIFIER • ■ ■ ■ ■ ■ LOW DISTORTION GAIN BANDWIDTH PRODUCT : 300MHz GAIN OF 2 STABILITY SLEW RATE : 400V/µs VERY FAST SETTLING TIME : 60ns 0.1% VERY HIGH INPUT IMPEDANCE DESCRIPTION The TSH321 is a wideband monolithic operational

60NS

Abstract: MAX4223
Contextual Info: * MAX4223 SAMLL-SIGNAL RESPONSE GAIN=+1 * 4223STRA.CIR XAR1 3 2 7 4 6 MAX4223 * +IN -IN VCC VEE OUT VP 7 0 5 VN 4 0 -5v VIN 3 0 PULSE -0.1v 0.1v 20NS .02N .02N 60NS RF 6 2 470 RL 6 0 100 *cload 6 0 10pF .OPTIONS RELTOL=.001 .tran .01Us .1Us .LIB MAX4223.FAM