60V 9A Search Results

0N06

Abstract: RFP70N06 RF1S70N06SM TB334 RF1S70N06SM9A RFG70N06 F1S70N06 rfp70
Contextual Info: RFG70N06, RFP70N06, RF1S70N06SM Data Sheet MAY 2001 70A, 60V, 0.014 Ohm, N-Channel Power MOSFETs [ /Title RFG7 0N06, RFP70 N06, RF1S7 0N06S /Subject (70A, 60V, 0.014 Ohm, ChanPower MOSFETs /Autho /Keywords (Inter- • 70A, 60V Formerly developmental type TA78440.

F1S50N06

Abstract: RFP50N06 RF1S50N06SM9A RF1S50N06 RF1S50N06SM RFG50N06 TB334 TA49018 50A60V rfp50n0
Contextual Info: RFG50N06, RFP50N06, RF1S50N06, RF1S50N06SM Semiconductor 50A, 60V, 0.022 Ohm, N-Channel Power MOSFETs October 1997 Features Description • 50A, 60V These N-Channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature

MOSFET 60V 210A

Abstract: 03N06C RLD03N06CLE RLD03N06CLESM RLD03N06CLESM9A RLP03N06CLE TB334
Contextual Info: RLD03N06CLE, RLD03N06CLESM, RLP03N06CLE Data Sheet July 1999 0.3A, 60V, 6 Ohm, ESD Rated, Current Limited, Voltage Clamped, Logic Level N-Channel Power MOSFETs File Number 3948.5 Features • 0.30A, 60V These are intelligent monolithic power circuits which

F16N06

Abstract: N06 MOSFET TO-252AA Package mos fet *16N06 AN9321 RFD16N06 RFD16N06SM RFD16N06SM9A TB334
Contextual Info: [ /Title RFD16 N06, RFD16 N06SM /Subject (16A, 60V, 0.047 Ohm, N-Channel Power MOSFET) /Author () /Keywords (Harris Semiconductor, NChannel Power MOSFET, TO251AA, TO252AA) /Cre- RFD16N06, RFD16N06SM Semiconductor 16A, 60V, 0.047 Ohm, N-Channel Power MOSFET

5n06

Abstract: F1S25N06 302 s1b diode
Contextual Info: RFP25N06, RF1S25N06SM Data Sheet 25A, 60V, 0.047 Ohm, N-Channel Power MOSFETs [ /Title RFP2 5N06, RF1S2 5N06S M /Subject (25A, 60V, 0.047 Ohm, NChannel Power MOSFETs) /Autho r () /Keywords (Intersil Corporation, NChannel Power MOSFETs, TO220AB , TO263AB

mosfet motor dc 48v

Abstract: 14n06l 14N06 FP14N RELAY 4088 RFD14N06L RFD14N06LSM RFD14N06LSM9A RFP14N06L TB334
Contextual Info: RFD14N06L, RFD14N06LSM, RFP14N06L Data Sheet July 1999 14A, 60V, 0.100 Ohm, Logic Level, N-Channel Power MOSFETs • 14A, 60V Formerly developmental type TA09870. Ordering Information PACKAGE 4088.3 Features These are N-Channel power MOSFETs manufactured using

9973

Contextual Info: Spec. No. : C418J3 Issued Date : 2008.08.20 Revised Date : 2009.02.04 Page No. : 1/7 CYStech Electronics Corp. N-Channel Enhancement Mode Power MOSFET MTN9973J3 BVDSS ID RDSON 60V 14A 80mΩ Features • VDS=60V RDS ON =80mΩ(max.)@VGS=10V, ID=9A RDS(ON)=100mΩ(max.)@VGS=4.5V, ID=6A

ic 7495

Contextual Info: A Product Line of Diodes Incorporated ZXTP25060BFH 60V PNP MEDIUM POWER TRANSISTOR IN SOT23 Features and Benefits Mechanical Data • BVCEO > -60V Breakdown Voltage • Case: SOT23 • 100V forward blocking voltage • Case material: molded Plastic. “Green” molding Compound.

RFP70N06

Abstract: AN9321 AN9322 RF1S70N06SM RF1S70N06SM9A RFG70N06 TB334
Contextual Info: RFG70N06, RFP70N06, RF1S70N06SM Data Sheet July 1999 70A, 60V, 0.014 Ohm, N-Channel Power MOSFETs • 70A, 60V Formerly developmental type TA49007. Ordering Information PACKAGE TO-247 RFG70N06 RFP70N06 TO-220AB RFP70N06 RF1S70N06SM TO-263AB F1S70N06 • rDS on = 0.014Ω

f3055l

Abstract: FP3055LE
Contextual Info: ? *3 2 £ RFD3055LE, RFD3055LESM, RFP3055LE 12A, 60V, 0.150 Ohm, ESD Rated, Logic Level, N-Channel Power MOSFETs September 1998 Features Description • 12A, 60V These are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature

MEN9973J3

Contextual Info: Spec. No. : C418J3-E Issued Date : 2009.02.10 Revised Date : Page No. : 1/7 CYStech Electronics Corp. N-Channel Enhancement Mode Power MOSFET MEN9973J3 BVDSS ID RDSON 60V 12A 100mΩ Features • VDS=60V RDS ON =80mΩ(max.)@VGS=10V, ID=9A RDS(ON)=100mΩ(max.)@VGS=5V, ID=6A

fp50n06

Abstract: c 4072 TA49164 F50N06LE FG50N06L FP50N06L RF1S50N06LESM RF1S50N06LESM9A RFG50N06LE RFP50N06LE
Contextual Info: RFG50N06LE, RFP50N06LE, RF1S50N06LESM Data Sheet October 1999 50A, 60V, 0.022 Ohm, Logic Level N-Channel Power MOSFETs File Number 4072.3 Features • 50A, 60V These N-Channel enhancement mode power MOSFETs are manufactured using the latest manufacturing process

Contextual Info: RLD03N06CLE, RLD03N06CLESM, RLP03N06CLE Semiconductor April 1999 Data Sheet 0.3A, 60V, 6 Ohm, ESD Rated, Current Limited, Voltage Clamped, Logic Level N-Channel Power MOSFETs File Num ber 3948.4 Features • 0.30A, 60V These are intelligent monolithic power circuits which

Contextual Info: A Product Line of Diodes Incorporated ZXTP25060BFH 60V PNP MEDIUM POWER TRANSISTOR IN SOT23 Features and Benefits Mechanical Data • BVCEO > -60V Breakdown Voltage • • 100V forward blocking voltage • Case material: molded Plastic. “Green” molding Compound.

03n06

Abstract: MOSFET 60V 210A 03N06C RLD03N06CLE RLD03N06CLESM RLD03N06CLESM9A RLP03N06CLE TB334 65E6
Contextual Info: RLD03N06CLE, RLD03N06CLESM, RLP03N06CLE Data Sheet January 2002 0.3A, 60V, 6 Ohm, ESD Rated, Current Limited, Voltage Clamped, Logic Level N-Channel Power MOSFETs Features • 0.30A, 60V These are intelligent monolithic power circuits which incorporate a lateral bipolar transistor, resistors, zener

RFD8P06LESM9A

Abstract: m041 mosfet motor dc 48v Logic Level p-Channel Power MOSFET RFD8P06LE RFD8P06LESM RFP8P06LE 08E4 30e2
Contextual Info: RFD8P06LE, RFD8P06LESM, RFP8P06LE Data Sheet July 1999 8A, 60V, 0.300 Ohm, ESD Rated, Logic Level, P-Channel Power MOSFET • 8A, 60V Formerly developmental type TA49203. • rDS ON = 0.300Ω • 2kV ESD Protected • Temperature Compensating PSPICE Model

5n06

Abstract: 5n06l RFD15N06LE RFD15N06LESM RFD15N06LESM9A TB334 N06L 215e3
Contextual Info: RFD15N06LE, RFD15N06LESM Data Sheet 15A, 60V, 0.065 Ohm, ESD Rated, Logic Level, N-Channel Power MOSFETs [ /Title RFD1 5N06L E, RFD15 N06LE SM /Subject (15A, 60V, 0.065 Ohm, ESD Rated, Logic Level, NChannel Power MOSFETs) /Autho r () /Keywords (Intersil

50n06l

Contextual Info: RFG50N06LE, RFP50N06LE, RF1S50N06LESM Semiconductor Data Sheet April 1999 50A, 60V, 0.022 Ohm, ESD Rated, Logic Level N-Channel Power MOSFETs 4072.2 Features • 50A, 60V These are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature

F1S30P06

Abstract: F1S30 mosfet motor dc 48v R*P30P06 RF1S30P06SM RF1S30P06SM9A RFG30P06 RFP30P06 TB334 F1S30P
Contextual Info: RFG30P06, RFP30P06, RF1S30P06SM Data Sheet July 1999 30A, 60V, 0.065 Ohm, P-Channel Power MOSFETs • 30A, 60V Formerly developmental type TA09834. Ordering Information PACKAGE TO-247 RFG30P06 RFP30P06 TO-220AB RFP30P06 RF1S30P06SM TO-263AB F1S30P06 • rDS ON = 0.065Ω

FD3055

Abstract: fp3055 TA49082 IS433 RFD3055
Contextual Info: RFD3055, RFD3055SM, RFP3055 Data Sheet January 2002 12A, 60V, 0.150 Ohm, N-Channel Power MOSFETs Features • 12A, 60V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a

8A60V

Abstract: RFD8P06E RFD8P06ESM RFD8P06ESM9A RFP8P06E TB334 bv254
Contextual Info: RFD8P06E, RFD8P06ESM, RFP8P06E Data Sheet January 2002 8A, 60V, 0.300 Ohm, P-Channel Power MOSFETs Features • 8A, 60V These are P-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives

f3055l

Abstract: FP3055LE f3055 Fp3055 FP3055L RFD3055LESM RFP3055LE RFD3055LE AN9321 RFD3055LESM9A
Contextual Info: RFD3055LE, RFD3055LESM, RFP3055LE Data Sheet January 2002 11A, 60V, 0.107 Ohm, Logic Level, N-Channel Power MOSFETs Features • 11A, 60V These N-Channel enhancement-mode power MOSFETs are manufactured using the latest manufacturing process technology. This process, which uses feature sizes

RFP70N06

Contextual Info: RFP70N06 September 2013 Data Sheet Features N-Channel Power MOSFET 60V, 70A, 14 mΩ • 70A, 60V These are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives optimum

Contextual Info: RFD14N06, RFD14N06SM, RFP14N06 HARRIS r^ o V o V ^ 14A, 60V, Avalanche Rated N-Channel Enhancement-Mode Power MOSFETs MegaFETs Ju n e 1995 Packaging Features JEDEC T0-220AB • 14A, 60V • rDS(ON) SOURCE = 0.100i2 • Temperature Compensating PSPICE Model