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Rochester Electronics LLC RF1S30P05 MOSFET P-CH 50V 30A
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DigiKey	RF1S30P05	Bulk			342	1 - 10 - 100 - 1000 $0.88 10000 $0.88	Buy Now
Fairchild Semiconductor Corporation RF1S30P05SM
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Bristol Electronics	RF1S30P05SM		154			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Harris Semiconductor RF1S30P05SM
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Bristol Electronics	RF1S30P05SM		50			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Rochester Electronics	RF1S30P05SM		92		1	1 $0.8451 10 $0.8451 100 $0.7944 1000 $0.7183 10000 $0.7183	Buy Now
Intersil Corporation RF1S30P05SM
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Bristol Electronics	RF1S30P05SM		45			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Harris Semiconductor RF1S30P06SM
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Bristol Electronics	RF1S30P06SM		9			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Rochester Electronics	RF1S30P06SM		475		1	1 $2.16 10 $2.16 100 $2.03 1000 $1.84 10000 $1.84	Buy Now

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F1S30P Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
F1S30P06 Abstract: F1S30 mosfet motor dc 48v R*P30P06 RF1S30P06SM RF1S30P06SM9A RFG30P06 RFP30P06 TB334 F1S30P Text: RFG30P06, RFP30P06, F1S30P06SM Data Sheet July 1999 30A, 60V, 0.065 Ohm, P-Channel Power MOSFETs • 30A, 60V Formerly developmental type TA09834. Ordering Information PACKAGE TO-247 RFG30P06 RFP30P06 TO-220AB RFP30P06 F1S30P06SM TO-263AB F1S30P06 • rDS ON = 0.065Ω	Original	PDF	RFG30P06, RFP30P06, RF1S30P06SM TA09834. O-247 O-220AB O-263AB 175oC TB334 RFP30P06 F1S30P06 F1S30 mosfet motor dc 48v R*P30P06 RF1S30P06SM RF1S30P06SM9A RFG30P06 RFP30P06 TB334 F1S30P
f1s30p05 Abstract: RF1S30P05SM RF1S30P05SM9A RFG30P05 RFP30P05 TB334 Text: RFG30P05, RFP30P05, F1S30P05SM Data Sheet July 1999 30A, 50V, 0.065 Ohm, P-Channel Power MOSFETs • 30A, 50V Formerly developmental type TA09834. Ordering Information PACKAGE 2436.4 Features These are P-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses	Original	PDF	RFG30P05, RFP30P05, RF1S30P05SM TA09834. f1s30p05 RF1S30P05SM RF1S30P05SM9A RFG30P05 RFP30P05 TB334
F1S30P05 Abstract: RFP30P05 RF1S30P05SM RF1S30P05SM9A RFG30P05 TB334 Text: RFG30P05, RFP30P05, F1S30P05SM Data Sheet January 2002 30A, 50V, 0.065 Ohm, P-Channel Power MOSFETs Features • 30A, 50V These are P-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives	Original	PDF	RFG30P05, RFP30P05, RF1S30P05SM TA09834. F1S30P05 RFP30P05 RF1S30P05SM RF1S30P05SM9A RFG30P05 TB334
F1S30P06 Abstract: RF1S30P06 RF1S30P06SM RFG30P06 RFP30P06 TB334 Text: [ /Title RFG30 P06, RFP30P 06, RF1S30 P06, RF1S30 P06SM /Subject (30A, 60V, 0.065 Ohm, PChannel Power MOSFETs) /Author () /Keywords (Harris Semiconductor, PChannel Power MOSFETs, TO247, TO220AB, TO262AA, TO263AB) RFG30P06, RFP30P06, F1S30P06, F1S30P06SM	Original	PDF	RFG30 RFP30P RF1S30 P06SM) O220AB, O262AA, O263AB) RFG30P06, RFP30P06, F1S30P06 RF1S30P06 RF1S30P06SM RFG30P06 RFP30P06 TB334
F1S30P06 Abstract: RFP30P06 RF1S30P06 RF1S30P06SM RF1S30P06SM9A RFG30P06 299E-3 Text: RFG30P06, RFP30P06, F1S30P06, F1S30P06SM S E M I C O N D U C T O R 30A, 60V, Avalanche Rated, P-Channel Enhancement-Mode Power MOSFETs March 1995 Features • • • • • • Packages JEDEC STYLE TO-247 30A, 60V rDS ON = 0.065Ω Temperature Compensating PSPICE Model	Original	PDF	RFG30P06, RFP30P06, RF1S30P06, RF1S30P06SM O-247 175oC F1S30P06 RFP30P06 RF1S30P06 RF1S30P06SM RF1S30P06SM9A RFG30P06 299E-3
RFP30P06 Abstract: R*P30P06 F1S30P06 RF1S30P06SM RF1S30P06SM9A RFG30P06 TB334 Text: RFG30P06, RFP30P06, F1S30P06SM Data Sheet January 2002 30A, 60V, 0.065 Ohm, P-Channel Power MOSFETs Features • 30A, 60V These are P-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives optimum	Original	PDF	RFG30P06, RFP30P06, RF1S30P06SM TA09834. O-247 O-220AB O-263AB 175oC RFP30P06 R*P30P06 F1S30P06 RF1S30P06SM RF1S30P06SM9A RFG30P06 TB334
RFP30P06 Abstract: No abstract text available Text: RFG30P06, RFP30P06, F1S30P06SM Data Sheet Title FG3 06, P30 6, 1S3 06S bt A, V, 65 m, anwer OSTs utho eyrds ter- July 1999 30A, 60V, 0.065 Ohm, P-Channel Power MOSFETs Features These are P-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature	Original	PDF	RFG30P06, RFP30P06, RF1S30P06SM TA09834. RFP30P06
65e9 transistor Abstract: transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note Text: DUAL DIE POWER MOSFETs TM 1 1-888-INTERSIL or 321-724-7143 \| \| ID AMPS rDS ON VGE = 10V OHMS rDS(ON) VGE = 5V OHMS rDS(ON) VGE = 2.5V OHMS TYPE MS-012AA (SO-8) MO-153AA (TSSOP-8) 12 3.50 - 0.050 - Dual N RF1K49090 - 12 3.50 - 0.130 - Dual P RF1K49093 - 12	Original	PDF	1-888-INTERSIL MS-012AA MO-153AA RF1K49090 RF1K49093 RF1K49092 ITF87056DQT ITF87072DK8T ITF87008DQT RF1K49223 65e9 transistor transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note
f1s30p05 Abstract: RS223 RFP30P05 TA09834 RF1S30P05 RF1S30P05SM RFG30P05 rfp30p05 harris Text: RFG30P05, RFP30P05, F1S30P05, F1S30P05SM S E M I C O N D U C T O R 30A, 50V, Avalanche Rated, P-Channel Enhancement-Mode Power MOSFETs December 1995 Features • • • • • • Packages JEDEC STYLE TO-247 30A, 50V rDS ON = 0.065Ω Temperature Compensating PSPICE Model	Original	PDF	RFG30P05, RFP30P05, RF1S30P05, RF1S30P05SM O-247 175oC f1s30p05 RS223 RFP30P05 TA09834 RF1S30P05 RF1S30P05SM RFG30P05 rfp30p05 harris
RFP30P Abstract: No abstract text available Text: RFG30P05, RFP30P05, F1S30P05SM Data Sheet July 1999 30A, 50V, 0.065 Ohm, P-Channel Power MOSFETs [ /Title RFG3 0P05, RFP30 P05, RF1S3 0P05S M /Subject (30A, 50V, 0.065 Ohm, PChannel Power MOSFETs) /Autho r () /Keywords (Intersil Corporation, PChannel Power	Original	PDF	RFG30P05, RFP30P05, RF1S30P05SM RFP30 0P05S O220AB RFP30P
Untitled Abstract: No abstract text available Text: P *3 3 S RFG30P06, RFP30P06, F1S30P06, F1S30P06SM 30A, 60V, 0.065 Ohm, P-Channel Power MOSFETs September 1998 Features Description • 30A, 60V These are P-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives optimum	OCR Scan	PDF	RFG30P06, RFP30P06, RF1S30P06, RF1S30P06SM 0-065i2 81e-8) 23e-1 97e-3 37e-5) 78e-9
F1S30P05 Abstract: No abstract text available Text: RFG30P05, RFP30P05, F1S30P05, F1S30P05SM fB l H A R R IS u u semiconductor 30A, 50V, Avalanche Rated, P-Channel Enhancement-Mode Power MOSFETs December 1995 Features Packages JE D EC STYLE TO -247 • 30A .50V SOURCE = 0.0651J • Temperature Compensating PSPICE Model	OCR Scan	PDF	RFG30P05, RFP30P05, RF1S30P05, RF1S30P05SM 0651J RF1S30P05SM F1S30P05
Untitled Abstract: No abstract text available Text: P *3 3 S RFG30P05, RFP30P05, F1S30P05, F1S30P05SM 30A, 50V, 0.065 Ohm, P-Channel Power MOSFETs September 1998 Features Description • 30A, 50V These are P-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses fea ture sizes approaching those of LSI circuits, gives optimum	OCR Scan	PDF	RFG30P05, RFP30P05, RF1S30P05, RF1S30P05SM 0-065i2 Operati85e-9 81e-8) 23e-1 97e-3 37e-5)
F1S30P06 Abstract: 30p06 Text: RFG30P06, RFP30P06, r f 1 S30P06, F1S30P06SM HARRIS S E M I C O N D U C T O R 30A, 60V, Avalanche Rated, P-Channel Enhancement-Mode Power MOSFETs March 1995 Features Packages JEDEC STYLE TO-247 • 3 0A , 60V • rDS ON = 0-06512 • T e m p e ra tu re C o m p e n s atin g P S P IC E M odel	OCR Scan	PDF	RFG30P06, RFP30P06, S30P06, RF1S30P06SM O-247 P06SM 81e-8) 23e-1 97e-3 37e-5) F1S30P06 30p06

equivalent data book of 10N60 mosfet Abstract: MC14016CP GD4511 an-6466 CX 2859 SMD 74AC14 spice 6120* harris HCF4018be 7028 SMD Transistor spice irfbc40 Text: $5.00 S E M I C O N D U C T O R TECHNICAL ASSISTANCE Harris Marketing Support Services HMSS , 1-800-4HARRIS HMSS provides world-class service to customers requiring information on all products offered by Harris Semiconductor. Ask Harris Marketing Support Services for answers concerning:	OCR Scan	PDF	1-800-4HARRIS equivalent data book of 10N60 mosfet MC14016CP GD4511 an-6466 CX 2859 SMD 74AC14 spice 6120* harris HCF4018be 7028 SMD Transistor spice irfbc40
Untitled Abstract: No abstract text available Text: mtefsil RFG30P05, RFP30P05, F1S30P05SM D a ta S h e e t J u ly 1 9 9 9 30A, 50V, 0.065 Ohm, P-Channel Power MOSFETs 243 $.4 Features • 30A, 50V These are P-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives	OCR Scan	PDF	RFG30P05, RFP30P05, RF1S30P05SM TA09834. RFG30P0S, RF1S30P05SM AN7260.