60V N-CHANNEL LOGIC LEVEL QFET Search Results

AN7260

Abstract: AN7254 RFW2N06RLE TB334 Logic Level N-Channel Power MOSFET
Contextual Info: RFW2N06RLE Data Sheet January 2002 2A, 60V, 0.160 Ohm, Logic Level, N-Channel Power MOSFET Features • 2A, 60V The RFW2N06RLE N-Channel, logic level, ESD protected, power MOSFET is manufactured using the MegaFET process. This process, which uses feature sizes approaching

Contextual Info: RFD4N06L, RFD4N06LSM Data Sheet 4A, 60V, 0.600 Ohm, Logic Level, N-Channel Power MOSFETs January 2002 Features • 4A, 60V The RFD4N06L, RFD4N06LSM are N-Channel enhancement mode silicon gate power field effect transistors specifically designed for use with logic level 5 volt driving sources in

AN7254

Abstract: RFD4N06L RFD4N06LSM TA09520 TB334
Contextual Info: RFD4N06L, RFD4N06LSM Data Sheet 4A, 60V, 0.600 Ohm, Logic Level, N-Channel Power MOSFETs January 2002 Features • 4A, 60V The RFD4N06L, RFD4N06LSM are N-Channel enhancement mode silicon gate power field effect transistors specifically designed for use with logic level 5 volt driving sources in

0N06L

Abstract: RFP30N06
Contextual Info: RFP30N06LE, RF1S30N06LESM Data Sheet 30A, 60V, ESD Rated, 0.047 Ohm, Logic Level N-Channel Power MOSFETs [ /Title RFP3 0N06L E, RF1S3 0N06L ESM /Subject (30A, 60V, ESD Rated, 0.047 Ohm, Logic Level NChannel Power MOSFETs) /Autho r () /Keywords (Intersil

5n06

Abstract: 5n06l RFD15N06LE RFD15N06LESM RFD15N06LESM9A TB334 N06L 215e3
Contextual Info: RFD15N06LE, RFD15N06LESM Data Sheet 15A, 60V, 0.065 Ohm, ESD Rated, Logic Level, N-Channel Power MOSFETs [ /Title RFD1 5N06L E, RFD15 N06LE SM /Subject (15A, 60V, 0.065 Ohm, ESD Rated, Logic Level, NChannel Power MOSFETs) /Autho r () /Keywords (Intersil

5N05

Contextual Info: RFP15N05L, RFP15N06L Data Sheet July 1999 15A, 50V and 60V, 0.140 Ohm, Logic Level N-Channel Power MOSFETs [ /Title RFP1 5N05L , RFP15 N06L /Subject (15A, 50V and 60V, 0.140 Ohm, Logic Level NChannel Power MOSFETs) /Autho r () /Keywords (Intersil Corporation,

6407D

Abstract: AN9321 HUF76407D3 HUF76407D3S HUF76407D3ST TB334 407D3 106E3 76407D
Contextual Info: [ /Title HUF7 6407D HUF76 407D3 /Subjec t (60V, 0.072 Ohm, 4A, NChann HUF76407D3, HUF76407D3S Data Sheet /Keyw ords (Fairch Corpor ation, Chann Logic Level UltraF Power MOSF ET, 4664.2 11A, 60V, 0.107 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Packaging

f3055l

Abstract: FP3055LE f3055 Fp3055 FP3055L RFD3055LESM RFP3055LE RFD3055LE AN9321 RFD3055LESM9A
Contextual Info: RFD3055LE, RFD3055LESM, RFP3055LE Data Sheet January 2002 11A, 60V, 0.107 Ohm, Logic Level, N-Channel Power MOSFETs Features • 11A, 60V These N-Channel enhancement-mode power MOSFETs are manufactured using the latest manufacturing process technology. This process, which uses feature sizes

AN7254

Abstract: AN7260 RFW2N06RLE TB334
Contextual Info: RFW2N06RLE Data Sheet Title FW2 6RL bt A, V, 60 m, gic vel, Cha el wer OST utho July 1999 2A, 60V, 0.160 Ohm, Logic Level, N-Channel Power MOSFET Features The RFW2N06RLE N-Channel, logic level, ESD protected, power MOSFET is manufactured using the MegaFET

FP3055LE

Abstract: f3055l
Contextual Info: RFD3055LE, RFD3055LESM, RFP3055LE Data Sheet January 2002 11A, 60V, 0.107 Ohm, Logic Level, N-Channel Power MOSFETs Features • 11A, 60V These N-Channel enhancement-mode power MOSFETs are manufactured using the latest manufacturing process technology. This process, which uses feature sizes

F3055L

Abstract: FP3055LE Fp3055 f3055 AN9321 RFD3055LE RFD3055LESM RFD3055LESM9A RFP3055LE TB334
Contextual Info: RFD3055LE, RFD3055LESM, RFP3055LE Data Sheet January 2002 11A, 60V, 0.107 Ohm, Logic Level, N-Channel Power MOSFETs Features • 11A, 60V These N-Channel enhancement-mode power MOSFETs are manufactured using the latest manufacturing process technology. This process, which uses feature sizes

RFD14N06L

Abstract: RFD14N06LSM RFD14N06LSM9A RFP14N06L TB334
Contextual Info: RFD14N06L, RFD14N06LSM, RFP14N06L Data Sheet January 2002 14A, 60V, 0.100 Ohm, Logic Level, N-Channel Power MOSFETs Features • 14A, 60V These are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits, gives

16n06l

Abstract: AN7254 AN7260 RFD16N06LESM RFD16N06LESM9A TB334
Contextual Info: RFD16N06LESM Data Sheet September 2002 16A, 60V, 0.047 Ohm, Logic Level, N-Channel Power MOSFETs Features • 16A, 60V These are N-Channel power MOSFETs manufactured using a modern process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum

Contextual Info: RFD16N06LESM Data Sheet September 2002 16A, 60V, 0.047 Ohm, Logic Level, N-Channel Power MOSFETs Features • 16A, 60V These are N-Channel power MOSFETs manufactured using a modern process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum

TA0522

Abstract: RFP15N06L RFP15N05L RFP15N05 AN7254 AN7260 TB334 RFP15N
Contextual Info: RFP15N05L, RFP15N06L Data Sheet January 2002 15A, 50V and 60V, 0.140 Ohm, Logic Level N-Channel Power MOSFETs Features • 15A, 50V and 60V These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers,

kp 1006

Abstract: HUFA76504DK8 HUFA76504DK8T MS-012AA TB334 HARRIS SOP8
Contextual Info: HUFA76504DK8 Data Sheet 2.3A, 80V, 0.222 Ohm, Dual N-Channel, Logic Level UltraFET Power MOSFET [ /Title HUF7 Packaging JEDEC MS-012AA 6400S BRANDING DASH K8 /Subject (60V, 0.072 1 2 Ohm, 3 4 4A, NChannel, Symbol Logic Level SOURCE1 (1) UltraFE GATE1 (2)

03n06

Abstract: MOSFET 60V 210A 03N06C RLD03N06CLE RLD03N06CLESM RLD03N06CLESM9A RLP03N06CLE TB334 65E6
Contextual Info: RLD03N06CLE, RLD03N06CLESM, RLP03N06CLE Data Sheet January 2002 0.3A, 60V, 6 Ohm, ESD Rated, Current Limited, Voltage Clamped, Logic Level N-Channel Power MOSFETs Features • 0.30A, 60V These are intelligent monolithic power circuits which incorporate a lateral bipolar transistor, resistors, zener

16n06l

Abstract: 16N06 16N06LE AN7254 AN7260 RFD16N06LE RFD16N06LESM RFD16N06LESM9A TB334
Contextual Info: RFD16N06LE, RFD16N06LESM Data Sheet 16A, 60V, 0.047 Ohm, Logic Level, N-Channel Power MOSFETs These are N-Channel power MOSFETs manufactured using a modern process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum

AN9321

Abstract: AN9322 RFD15N06LE RFD15N06LESM RFD15N06LESM9A TB334 215e3
Contextual Info: RFD15N06LE, RFD15N06LESM Data Sheet 15A, 60V, 0.065 Ohm, ESD Rated, Logic Level, N-Channel Power MOSFETs These are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives optimum

P30N06L

Contextual Info: RFP30N06LE, RF1S30N06LESM Data Sheet 30A, 60V, ESD Rated, 0.047 Ohm, Logic Level N-Channel Power MOSFETs These are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives

P30N06

Abstract: p30n06le P30N06L RFP30N06LE AN9321 RF1S30N06LESM RF1S30N06LESM9A TB334
Contextual Info: RFP30N06LE, RF1S30N06LESM Data Sheet 30A, 60V, ESD Rated, 0.047 Ohm, Logic Level N-Channel Power MOSFETs These are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives

F30N06LE

Abstract: AN9321 RF1S30N06LESM RF1S30N06LESM9A RFP30N06LE TB334 F30N06L 1S30N06L
Contextual Info: RFP30N06LE, RF1S30N06LESM Data Sheet 30A, 60V, ESD Rated, 0.047 Ohm, Logic Level N-Channel Power MOSFETs These are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives

RFP4N05L

Abstract: RFP4N06L AN7254 AN7260 TA09520 TB334
Contextual Info: RFP4N05L, RFP4N06L Data Sheet January 2002 4A, 50V and 60V, 0.800 Ohm, Logic Level, N-Channel Power MOSFETs The RFP4N05L and RFP4N06L are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching

FDS9945

Abstract: CBVK741B019 F011 F63TNR F852 FDS9953A L86Z 86 diode
Contextual Info: FDS9945 60V N-Channel PowerTrench MOSFET General Description Features • 3.5 A, 60 V. These N Channel Logic Level MOSFET have been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.