60V TRANSISTOR NPN 3A Search Results

60V TRANSISTOR NPN 3A Result Highlights (5)

Part	Manufacturer	Description
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold
TPCP8515	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PS-8
TTC021	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=120 V / IC=3 A / hFE=120~240 / VCE(sat)=0.15 V / tf=170 ns / PW-Mini
2SC5198	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=140 V / IC=10 A / hFE=55~160 / VCE(sat)=2.0 V / TO-3P(N)

60V TRANSISTOR NPN 3A Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
MARKING KN2 Contextual Info: DXT651 60V NPN LOW VCE sat TRANSISTOR IN SOT89 Features Mechanical Data • BVCEO > 60V  Case: SOT89  IC = 3A high Continuous Current  Case material: Molded Plastic. “Green” Molding Compound.  Low saturation voltage VCE(sat) < 300mV @ 1A 	Original	DXT651 300mV DXT751 AEC-Q101 J-STD-020 MIL-STD-202, DS31184 MARKING KN2	PDF
2SA2071 Abstract: 2SC5824 T100 Contextual Info: 2SC5824 Transistor Power transistor 60V, 3A 2SC5824 !External dimensions (Units : mm) MPT3 4.0 0.4 1.5 1.0 2.5 0.5 (1) 4.5 3.0 0.5 1.6 (2) (1)Base(Gate) (2)Collector(Drain) (3)Emitter(Sourse) !Applications NPN Silicon epitaxial planar transistor 0.4 1.5	Original	2SC5824 200mV 200mA) 2SA2071. 2SA2071 2SC5824 T100	PDF
2SA2071 Abstract: 2SC5824 T100 Contextual Info: 2SC5824 Transistor Power transistor 60V, 3A 2SC5824 !External dimensions (Units : mm) MPT3 4.0 0.4 1.5 1.0 2.5 0.5 (1) 4.5 3.0 0.5 1.6 (2) (1)Base(Gate) (2)Collector(Drain) (3)Emitter(Sourse) !Applications NPN Silicon epitaxial planar transistor 0.4 1.5	Original	2SC5824 200mV 200mA) 2SA2071. 2SA2071 2SC5824 T100	PDF
Contextual Info: TSC5904 Low Vcesat NPN Transistor SOT-23 PRODUCT SUMMARY Pin Definition: 1. Base 2. Emitter 3. Collector BVCBO 80V BVCEO 60V IC 3A VCE SAT Features Ordering Information High Collector-Emitter BVCEO=60V High Collector Current IC =3A Part No. TSC5904CX RF	Original	TSC5904 OT-23 TSC5904CX 300mA	PDF
Code A08 RF Semiconductor Abstract: NPN planar RF transistor marking code B2 RF POWER TRANSISTOR NPN A08 marking A08 SOT23 a08 transistor Contextual Info: TSC5904 Low Vcesat NPN Transistor SOT-23 PRODUCT SUMMARY Pin Definition: 1. Base 2. Emitter 3. Collector BVCBO 80V BVCEO 60V IC 3A VCE SAT Features ● ● Ordering Information High Collector-Emitter BVCEO=60V High Collector Current IC =3A Part No. TSC5904CX RF	Original	TSC5904 OT-23 TSC5904CX 300mA Code A08 RF Semiconductor NPN planar RF transistor marking code B2 RF POWER TRANSISTOR NPN A08 marking A08 SOT23 a08 transistor	PDF
FZT651 Abstract: transistor fzt651 FZT marking code FZT651QTC fzt651tc FZT651TA Contextual Info: A Product Line of Diodes Incorporated Green FZT651 60V NPN SILICON PLANAR HIGH PERFORMANCE TRANSISTOR IN SOT223 Features Mechanical Data • • • • • • • • • • • • BVCEO > 60V Maximum continuous current IC cont = 3A Low Saturation Voltage	Original	FZT651 OT223 FZT751 AEC-Q101 OT223 J-STD-020 FZT651TA FZT651QTA FZT651TC FZT651 transistor fzt651 FZT marking code FZT651QTC	PDF
Contextual Info: A Product Line of Diodes Incorporated Green FZT651 60V NPN SILICON PLANAR HIGH PERFORMANCE TRANSISTOR IN SOT223 Features Mechanical Data • • • • • • • • • • • • • BVCEO > 60V Maximum continuous current IC = 3A Low Saturation Voltage	Original	FZT651 OT223 FZT751 AEC-Q101 OT223 J-STD-020 MIL-STD-202, DS33149	PDF
2SC5824 Abstract: 2SA2071 T100 2SC582 2SA20 Contextual Info: 2SC5824 Transistor Power transistor 60V, 3A 2SC5824 zExternal dimensions (Unit : mm) MPT3 4.0 0.4 1.5 1.0 2.5 0.5 (1) 4.5 3.0 0.5 1.6 (2) (1)Base(Gate) (2)Collector(Drain) (3)Emitter(Sourse) zApplications NPN Silicon epitaxial planar transistor 0.4 1.5 0.4	Original	2SC5824 200mV 200mA) 2SA2071. 2SC5824 2SA2071 T100 2SC582 2SA20	PDF
ZNS66 Contextual Info: DSS60601MZ4 60V NPN LOW SATURATION TRANSISTOR IN SOT223 Features Mechanical Data •     BVCEO > 60V IC = 6A High Continuous Current ICM = 12A Peak Pulse Current Low Saturation Voltage VCE sat < 60mV @ 1A Complementary PNP Type: DSS60600MZ4 	Original	DSS60601MZ4 OT223 DSS60600MZ4 AEC-Q101 J-STD-020 MIL-STD-202, DS31587 ZNS66	PDF
Contextual Info: 2SA2701 / 2SA2702 Datasheet PNP -3.0A -60V Middle Power Transistor lOutline Parameter Value VCEO IC -60V -3.0A MPT3 Collector CPT3 Base Collector Base Emitter Emitter 2SA2071 SC-62 <SOT-89> lFeatures 1) Suitable for Middle Power Driver 2) Complementary NPN Types : 2SC5824 / 2SC5825	Original	2SA2701 2SA2702 2SA2071 SC-62) OT-89> 2SC5824 2SC5825 -500mV 2SA2072 SC-63)	PDF
C5103 Abstract: transistor C5103 C5103 Transistor Contextual Info: 2SC5103 Datasheet NPN 5A 60V Middle Power Transistor lOutline Parameter Value VCEO IC 60V 5A CPT3 Collector Base Emitter 2SC5103 SC-63 <SOT-428> lFeatures 1) Suitable for Middle Power Driver 2) Complementary PNP Types : 2SA1952 3) Low VCE(sat) VCE(sat)=0.3V(Max.) (IC/IB=3A/0.15A)	Original	2SC5103 SC-63) OT-428> 2SA1952 C5103 R1102A C5103 transistor C5103 C5103 Transistor	PDF
SOT89 transistor marking 851 Contextual Info: A Product Line of Diodes Incorporated Green ZXTN2010Z 60V NPN LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89 Features Mechanical Data • BVCEO > 60V  Case: SOT89  IC = 5A High Continuous Current  Case Material: Molded Plastic. “Green” Molding Compound.	Original	ZXTN2010Z J-STD-020 ZXTP2012Z MIL-STD-202, DS33661 SOT89 transistor marking 851	PDF
2sa1952 Contextual Info: 2SA1952 Datasheet PNP -5A -60V Middle Power Transistor lOutline Parameter Value VCEO IC -60V -5A CPT3 Collector Base Emitter 2SA1952 SC-63 <SOT-428> lFeatures 1) Suitable for Middle Power Driver 2) Complementary NPN Types : 2SC5103 3) Low VCE(sat) VCE(sat)= -0.3V(Max.) (IC/IB= -3A/ -0.15A)	Original	2SA1952 SC-63) OT-428> 2SC5103 A1952 R1102A 2sa1952	PDF
transistor d2012 Abstract: d2012 transistor TRANSISTOR-D2012 D2012 transistor equivalent d2012 Contextual Info: D2012 YOUDA TRANSISTOR Si NPN TRANSISTOR—D2012 PIN CONFIGURATIONS DESCRIPTION AND FEATURES Collector-Emitter voltage: BVCBO= 60V Collector current up to 3A *High hFE linearity PIN 1 2 3 ABSOLUTE MAXIMUM RATINGS Tamb=25℃ PARAMETER SYMBOL Collector-Base Voltage	Original	D2012 TRANSISTOR--D2012 transistor d2012 d2012 transistor TRANSISTOR-D2012 D2012 transistor equivalent d2012	PDF

transistor d2012 Abstract: D2012 Contextual Info: D2012 YOUDA TRANSISTOR Si NPN TRANSISTOR—D2012 PIN CONFIGURATIONS DESCRIPTION AND FEATURES Collector-Emitter voltage: BVCBO= 60V Collector current up to 3A *High hFE linearity PIN 1 2 3 ABSOLUTE MAXIMUM RATINGS Tamb=25℃ PARAMETER SYMBOL Collector-Base Voltage	Original	D2012 transistor d2012 D2012	PDF
D2012 Contextual Info: D2012 YOUDA TRANSISTOR SI NPN TRANSISTOR—D2012 PIN CONFIGURATIONS DESCRIPTION AND FEATURES Collector-Emitter voltage: BVCBO= 60V Collector current up to 3A *High hFE linearity PIN 1 2 3 ABSOLUTE MAXIMUM RATINGS Tamb=25℃ PARAMETER SYMBOL Collector-Base Voltage	Original	D2012 D2012	PDF
d880 transistor Abstract: transistor D880 Contextual Info: D880 YOUDA TRANSISTOR Si NPN TRANSISTOR—D880 PIN CONFIGURATIONS DESCRIPTION AND FEATURES Collector-Emitter voltage: BVCBO= 60V Collector current up to 3A *High hFE linearity PIN 1 2 3 ABSOLUTE MAXIMUM RATINGS Tamb=25℃ PARAMETER SYMBOL Collector-Base Voltage	Original		PDF
Contextual Info: DSS4160DS 60V DUAL NPN LOW SATURATION TRANSISTOR IN SOT26 Features Mechanical Data • BVCEO > 60V   IC = 1A high Continuous Collector Current  Case Material: Molded Plastic, “Green” Molding Compound  ICM = 2A Peak Pulse Current  UL Flammability Classification Rating 94V-0	Original	DSS4160DS J-STD-020 250mV MIL-STD-202, DS36556	PDF
Contextual Info: A Product Line of Diodes Incorporated Green FZT651 60V NPN HIGH PERFORMANCE TRANSISTOR IN SOT223 Features Mechanical Data •             BVCEO > 60V IC = 3A High Continuous Current ICM = 6A Peak Pulse Current Low Saturation Voltage VCE sat < 300mV @ 1A	Original	FZT651 OT223 300mV FZT751 AEC-Q101 J-STD-020 DS33149	PDF
Contextual Info: A Product Line of Diodes Incorporated FMMT491 60V NPN MEDIUM POWER TRANSISTOR IN SOT23 Feature Mechanical Data • BVCEO > 60V • • IC = 1A Continuous Collector Current • • ICM = 2A Peak Pulse Current Case: SOT23 Case Material: molded plastic, “Green” molding compound	Original	FMMT491 500mW FMMT591 AEC-Q101 DS33091	PDF
Contextual Info: A Product Line of Diodes Incorporated FCX491 60V NPN MEDIUM POWER TRANSISTOR IN SOT89 Features Mechanical Data • BVCEO > 60V   IC = 1A Continuous Collector Current   ICM = 2A Peak Pulse Current Case: SOT89 Case Material: Molded Plastic. “Green” Molding Compound.	Original	FCX491 FCX591 AEC-Q101 DS33054	PDF
Contextual Info: A Product Line of Diodes Incorporated FCX491 60V NPN MEDIUM POWER TRANSISTOR IN SOT89 Features Mechanical Data • BVCEO > 60V   IC = 1A Continuous Collector Current     ICM = 2A Peak Pulse Current RCE sat = 195mΩ for a Low Equivalent On-Resistance	Original	FCX491 FCX591 AEC-Q101 DS33054	PDF
Contextual Info: A Product Line of Diodes Incorporated Green FZT651Q 60V NPN HIGH PERFORMANCE TRANSISTOR IN SOT223 Description Mechanical Data This Bipolar Junction Transistor BJT has been designed to meet the • stringent requirements of Automotive Applications. •	Original	FZT651Q OT223 J-STD-020 300mV MIL-STD-202, DS36917	PDF
Contextual Info: A Product Line of Diodes Incorporated FMMT491Q 60V NPN MEDIUM POWER TRANSISTOR IN SOT23 Description Mechanical Data This Bipolar Junction Transistor BJT has been designed to meet the • stringent requirements of Automotive Applications. • Case: SOT23	Original	FMMT491Q J-STD-020 MIL-STD-202, DS37009	PDF

60V TRANSISTOR NPN 3A Search Results

60V TRANSISTOR NPN 3A Result Highlights (5)

60V TRANSISTOR NPN 3A Datasheets Context Search

MARKING KN2

2SA2071

2SA2071

Code A08 RF Semiconductor

FZT651

2SC5824

ZNS66

C5103

SOT89 transistor marking 851

2sa1952

transistor d2012

transistor d2012

D2012

d880 transistor